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1. 发明授权

US5458697A Highly purified metal material and sputtering target using the same 失效
标题翻译：高纯金属材料和使用其的溅射靶
公开(公告)号：US5458697A
公开(公告)日：1995-10-17
申请号：US351542
申请日：1994-12-07
申请人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
发明人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC分类号： C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L21/477
CPC分类号： C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.
摘要翻译：这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。高纯度金属的Al含量不大于10ppm。氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

2. 发明授权

US5418071A Sputtering target and method of manufacturing the same 失效
标题翻译：溅射靶及其制造方法
公开(公告)号：US5418071A
公开(公告)日：1995-05-23
申请号：US12845
申请日：1993-02-04
申请人： Michio Satou , Takashi Yamanobe , Takashi Ishigami , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Minoru Obata , Shigeru Ando
发明人： Michio Satou , Takashi Yamanobe , Takashi Ishigami , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Minoru Obata , Shigeru Ando
IPC分类号： B22F3/14 , C04B35/58 , C22C1/05 , C23C14/06 , C23C14/34 , H01L21/28 , H01L21/285 , B22F7/06
CPC分类号： C04B35/58085 , C04B35/58092 , C04B35/645 , C04B35/65 , C23C14/3414 , Y10T428/12014 , Y10T428/12028 , Y10T428/12049 , Y10T428/12056
摘要： In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.
摘要翻译：在本发明中，金属硅化物晶粒形成金属硅化物相的互连结构，形成Si相的Si晶粒不连续地分散在金属硅化物相之间，以提供具有高密度二相结构的溅射靶，并具有铝含量为1ppm以下。由于目标的高密度和高强度，溅射期间从目标产生颗粒减少，并且由于靶的碳含量降低，可以防止在溅射期间将碳混入薄膜中。

3. 发明授权

US5196916A Highly purified metal material and sputtering target using the same 失效
标题翻译：使用相同的高纯度金属材料和溅射目标
公开(公告)号：US5196916A
公开(公告)日：1993-03-23
申请号：US655950
申请日：1991-02-15
申请人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
发明人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC分类号： C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.

4. 发明授权

US5470527A Ti-W sputtering target and method for manufacturing same 失效
标题翻译： Ti-W溅射靶及其制造方法
公开(公告)号：US5470527A
公开(公告)日：1995-11-28
申请号：US302996
申请日：1994-09-12
申请人： Takashi Yamanobe , Michio Satou , Takashi Ishigami , Minoru Obata , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Shigeru Ando
发明人： Takashi Yamanobe , Michio Satou , Takashi Ishigami , Minoru Obata , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Shigeru Ando
IPC分类号： C23C14/14 , C23C14/34 , B22F3/10
CPC分类号： C23C14/3414
摘要： A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.
摘要翻译：基本上由Ti-W相的连续基体，分散在基体中的粒径为50μm以下的Ti相和粒径为20μm以下的W相组成的溅射靶也分布在矩阵。优选地，靶含有1ppm以下的铝。目标具有高密度和低杂质含量，当用于溅射时，该靶减少了靶中的粒子的产生。还公开了溅射靶的制造方法。

5. 发明授权

US5679983A Highly purified metal material and sputtering target using the same 失效
标题翻译：高纯金属材料和使用其的溅射靶
公开(公告)号：US5679983A
公开(公告)日：1997-10-21
申请号：US454583
申请日：1995-05-31
申请人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
发明人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC分类号： C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.
摘要翻译：这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。高纯度金属的Al含量不大于10ppm。氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

6. 发明授权

US5584906A Highly purified titanium material, method for preparation of it and sputtering target using it 失效
公开(公告)号：US5584906A
公开(公告)日：1996-12-17
申请号：US28084
申请日：1993-03-08
申请人： Takashi Ishigami , Mituo Kawai , Noriaki Yagi
发明人： Takashi Ishigami , Mituo Kawai , Noriaki Yagi
IPC分类号： C22B9/22 , C22B34/12 , C22C14/00 , C23C14/34 , C25C3/28
CPC分类号： C22C14/00 , C22B34/1295 , C22B9/228 , C23C14/3414 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01074
摘要： The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.

7. 发明授权

US06210634B1 Highly purified titanium material, method for preparation of it and sputtering target using it 失效
标题翻译：高纯钛材料，其制备方法和溅射靶材
公开(公告)号：US06210634B1
公开(公告)日：2001-04-03
申请号：US09280001
申请日：1999-03-29
申请人： Takashi Ishigami , Mituo Kawai , Noriaki Yagi
发明人： Takashi Ishigami , Mituo Kawai , Noriaki Yagi
IPC分类号： C22C1400
CPC分类号： C22B9/228 , C22B34/1295 , C22C14/00 , C23C14/3414 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01074
摘要： The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.
摘要翻译：通过熔盐电解或碘化法制备的粗Ti粒子根据杂质的含量分为各个粒径，具有所需粒径的粗Ti粒子选自根据各粒径分级的粗Ti粒子。否则，粗Ti颗粒被酸处理。然后电子束熔化。通过上述制造方法，制备氧含量不大于350ppm，Fe，Ni和Cr含量不高于15ppm的高纯度Ti材料，Na和K含量不大于0.5ppm ，作为材料特性不小于70％的面积的减小，以及不低于16W / m K的热导率。简而言之，高纯度，高加工性和良好导热性的高纯度Ti材料可以是获得。可以从使用上述高纯度Ti材料制备的溅射靶获得具有更均匀厚度的膜和内部结构的膜。

8. 发明授权

US06400025B1 Highly purified titanium material, method for preparation of it and sputtering target using it 失效
标题翻译：高纯钛材料，其制备方法和溅射靶材
公开(公告)号：US06400025B1
公开(公告)日：2002-06-04
申请号：US09280653
申请日：1999-03-29
申请人： Takashi Ishigami , Mituo Kawai , Noriaki Yagi
发明人： Takashi Ishigami , Mituo Kawai , Noriaki Yagi
IPC分类号： H01L2348
CPC分类号： C22B9/228 , C22B34/1295 , C22C14/00 , C23C14/3414 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01074
摘要： The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.
摘要翻译：通过熔盐电解或碘化法制备的粗Ti粒子根据杂质的含量分为各个粒径，具有所需粒径的粗Ti粒子选自根据各粒径分级的粗Ti粒子。否则，粗Ti颗粒被酸处理。然后电子束熔化。通过上述制造方法，制备氧含量不大于350ppm，Fe，Ni和Cr含量不高于15ppm的高纯度Ti材料，Na和K含量不大于0.5ppm ，作为材料特性不小于70％的面积的减小，以及不低于16W / m K的热导率。简而言之，高纯度，高加工性和良好导热性的高纯度Ti材料可以是获得。可以从使用上述高纯度Ti材料制备的溅射靶获得具有更均匀厚度的膜和内部结构的膜。

9. 发明授权

US5204057A Highly purified titanium material and its named article, a sputtering target 失效
标题翻译：高纯钛材料及其命名物，溅射靶
公开(公告)号：US5204057A
公开(公告)日：1993-04-20
申请号：US924770
申请日：1992-04-09
申请人： Takashi Ishigami , Mituo Kawai , Noriaki Yagi
发明人： Takashi Ishigami , Mituo Kawai , Noriaki Yagi
IPC分类号： C22B9/22 , C22B34/12 , C22C14/00 , C23C14/34
CPC分类号： C22C14/00 , C22B34/1295 , C22B9/228 , C23C14/3414 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01074
摘要： The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.
摘要翻译：通过熔盐电解或碘化法制备的粗Ti粒子根据杂质的含量分为各个粒径，具有所需粒径的粗Ti粒子选自根据各粒径分级的粗Ti粒子。否则，粗Ti颗粒被酸处理。然后电子束熔化。通过上述制造方法，制备氧含量不大于350ppm，Fe，Ni和Cr含量不高于15ppm的高纯度Ti材料，Na和K含量不大于0.5ppm ，作为材料特性不小于70％的面积的减小，以及不低于16W / m K的热导率。简而言之，高纯度，高加工性和良好导热性的高纯度Ti材料可以是获得。可以从使用上述高纯度Ti材料制备的溅射靶获得具有更均匀厚度的膜和内部结构的膜。

10. 再颁专利

USRE45481E1 Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same 有权
标题翻译：薄膜互连线，用于形成布线膜的溅射靶和使用其的电子部件
公开(公告)号：USRE45481E1
公开(公告)日：2015-04-21
申请号：US11386117
申请日：2006-03-22
申请人： Takashi Ishigami , Koichi Watanabe , Akihisa Nitta , Toshihiro Maki , Noriaki Yagi
发明人： Takashi Ishigami , Koichi Watanabe , Akihisa Nitta , Toshihiro Maki , Noriaki Yagi
IPC分类号： H01L21/20 , C22C21/00
CPC分类号： C22C21/00
摘要： An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.
摘要翻译：包含0.001〜30原子％的至少一种能够构成铝的金属间化合物和/或具有比铝更高的标准电极电位的第一元素的互连线，例如至少一种选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb，Dy，Er，Th，Sr，Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re， Fe，Co，Ni，Pd，Ir，Pt，Cu，Ag，Au，Cd，Si，Pb和B; 和一种选自C，O，N和H的第二元素，其比例为0.01〜100原子％的比例，余量基本上为Al。除了具有低电阻之外，这种薄膜的Al互连线可以防止发生小丘和与ITO电极的电化学反应。可以通过使用具有相似组成的溅射靶以无尘的方式溅射来获得薄膜的互连线。

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