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    • 2. 发明授权
    • Cosmetic container
    • 化妆品容器
    • US5873667A
    • 1999-02-23
    • US499201
    • 1995-07-07
    • Takashi InoueTakeo IwahoriKenichi Ito
    • Takashi InoueTakeo IwahoriKenichi Ito
    • A45C13/00A45D40/06A45D40/12
    • A45C13/008A45D40/06
    • In a cosmetic container an outer body portion surrounds a main body portion and is rotatable with respect thereto. Rotation of the main body moves a cosmetic holder up and down within the main body. An insert sleeve is fixedly secured to the outer body and surrounds the main body. The upper portion of the outer body is formed to provide an integral active portion positioned between the main body and the insert sleeve with gaps therebetween. The active portion of the outer body is provided with an inwardly projecting circular rib at an intermediate portion thereof which rotatably contacts the outer peripheral surface of the main body. The opposite end of the active portion of the main body elastically engages with the inner peripheral portion of the insert sleeve. Thus, the active portion of the outer body will act as a spring and can be deformed appropriately within the space between the main body and the insert sleeve.
    • 在化妆品容器中,外主体部分围绕主体部分并且可相对于其旋转。 主体的旋转使主体内的化妆品容器上下移动。 插入套筒固定地固定到外部主体并且围绕主体。 外体的上部形成为提供一体的主动部分,其位于主体和插入套筒之间,其间具有间隙。 外体的活动部分在其可旋转地接触主体的外周表面的中间部分处设置有向内突出的圆形肋。 主体的主动部分的相对端与插入套筒的内周部分弹性接合。 因此,外体的活动部分将用作弹簧并且可以在主体和插入套筒之间的空间内适当地变形。
    • 10. 发明授权
    • Semiconductor device using a group III nitride-based semiconductor
    • 使用III族氮化物基半导体的半导体器件
    • US08674407B2
    • 2014-03-18
    • US12919640
    • 2009-03-12
    • Yuji AndoYasuhiro OkamotoKazuki OtaTakashi InoueTatsuo NakayamaHironobu Miyamoto
    • Yuji AndoYasuhiro OkamotoKazuki OtaTakashi InoueTatsuo NakayamaHironobu Miyamoto
    • H01L29/66
    • H01L29/7783H01L29/2003H01L29/4236H01L29/518H01L29/7785
    • The present invention provides a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, the semiconductor device has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current, and is also applicable to the enhancement mode type.
    • 本发明提供一种具有这样的结构的半导体器件,该半导体器件通过依次层叠由晶格弛豫的Al x Ga 1-x N(0 @ x @ 1)构成的下阻挡层,由InyGa1-yN(0 @ y @ 1) 具有压应变和由Al z Ga 1-z N(0 @ z @ 1)组成的接触层,其中在所述In y Ga 1-y N沟道层与所述Al z Ga 1-z N接触层的界面附近产生二维电子气; 通过介入绝缘膜形成嵌入在凹陷部分中的栅电极,该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成,直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。 因此,半导体器件在保持低栅极漏电流的同时具有优异的阈值电压的均匀性和再现性,并且也适用于增强型。