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1. 发明授权

US4288851A Method of determining position of openings adapted to receive fret saw blade of numerically controlled fret saw machines 失效
标题翻译：确定开口位置的方法，适用于接收数控磨床的磨刀片
公开(公告)号：US4288851A
公开(公告)日：1981-09-08
申请号：US81553
申请日：1979-10-03
申请人： Takao Manabe , Hitoshi Ebata , Shouichi Shin
发明人： Takao Manabe , Hitoshi Ebata , Shouichi Shin
IPC分类号： B23D49/08 , B23D51/04 , B23D59/00 , G05B19/18 , G06F15/46 , B27B19/00
CPC分类号： B23D49/08 , B23D51/046 , B23D59/008 , G05B19/182 , G05B2219/45144 , G05B2219/49113 , Y10T29/49996 , Y10T29/5107 , Y10T83/0605
摘要： In a machine for cutting grooves of a given pattern through a blank with a fret saw blade, openings for receiving the fret saw blade at the cutting starting points of the grooves are determined such that the center of each opening is positioned at a point spaced from a cutting start point by a distance equal to one half of the width of the fret saw blade in a direction opposite to the direction of cutting the groove.
摘要翻译：在用于通过具有颤动锯片的坯料切割给定图案的凹槽的机器中，确定用于在凹槽的切割起始点处接收磨边锯片的开口，使得每个开口的中心位于与切割开始点在与切割方向相反的方向上等于裂纹锯片的宽度的一半的距离。

2. 发明授权

US4305128A Method and apparatus for controlling orientation of tools 失效
标题翻译：用于控制工具取向的方法和装置
公开(公告)号：US4305128A
公开(公告)日：1981-12-08
申请号：US23010
申请日：1979-03-21
申请人： Takao Manabe , Shoichi Shin , Hitoshi Ebata
发明人： Takao Manabe , Shoichi Shin , Hitoshi Ebata
IPC分类号： B26D5/00 , G05B19/18 , G05B19/25 , B26D5/30
CPC分类号： G05B19/182 , G05B2219/45144 , G05B2219/50357 , Y02P90/265 , Y10T83/169
摘要： When cutting a groove of a predetermined contour through a plate shaped workpiece with a fret saw blade, various program data regarding the direction of movements of the fret saw blade and the contour of the groove to be cut are stored in a memory device. The fret saw blade is moved in a direction instructed by the memory device and the orientation of the saw blade is controlled at the starting point of each segment of the groove.
摘要翻译：当通过具有颤振锯片的板状工件切割预定轮廓的凹槽时，关于磨边锯片的运动方向和要切割的凹槽的轮廓的各种程序数据被存储在存储装置中。磨损锯片沿着记忆装置指示的方向移动，并且锯条的取向被控制在凹槽的每个部分的起点处。

3. 发明授权

US4430959A Semiconductor vapor phase growing apparatus 失效
标题翻译：半导体气相生长装置
公开(公告)号：US4430959A
公开(公告)日：1984-02-14
申请号：US461231
申请日：1983-01-26
申请人： Hitoshi Ebata , Shigetugu Matunaga
发明人： Hitoshi Ebata , Shigetugu Matunaga
IPC分类号： H01L21/205 , C23C16/52 , C30B25/16 , H01L21/31 , B05C1/00 , B05C3/00
CPC分类号： C23C16/52 , C30B25/16 , C30B25/165
摘要： In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates supported by a rotary support disposed in a reaction furnace, and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control device for ON-OFF controlling the valves according to a predetermined program. The control device comprises a memory region for storing a process program group including a group of process programs including informations regarding a time for designating a process of vapor phase growth in the reaction furnace, gases utilized, flow quantity thereof and furnace temperature, and a system program that decodes the program group for producing control signals for the valves.
摘要翻译：在由设置在反应炉中的旋转支撑体支撑的半导体基板上气相生长N或P型半导体层的装置中，并且各种类型的气体通过管线网络和阀门进入炉中，提供了一种控制装置用于根据预定程序对阀进行ON-OFF控制。控制装置包括用于存储处理程序组的存储区域，该处理程序组包括一组处理程序，包括关于指定反应炉中气相生长过程的时间的信息，所使用的气体，其流量和炉温，以及系统程序，用于解码程序组以产生用于阀的控制信号。

4. 再颁专利

USRE33326E Semiconductor vapor phase growing apparatus 失效
标题翻译：半导体气相生长装置
公开(公告)号：USRE33326E
公开(公告)日：1990-09-11
申请号：US204364
申请日：1988-06-09
申请人： Hitoshi Ebata , Shigetugu Matunaga
发明人： Hitoshi Ebata , Shigetugu Matunaga
IPC分类号： H01L21/205 , C23C16/52 , C30B25/16 , H01L21/31
CPC分类号： C23C16/52 , C30B25/16 , C30B25/165
摘要： In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates supported by a rotary support disposed in a reaction furnace, and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control device for ON-OFF controlling the valves according to a predetermined program. The control device comprises a memory region for storing a process program group including a group of process programs including information regarding a time for designating a process of vapor phase growth in the reaction furnace, gases utilized, flow quantity thereof and furnace temperature, and a system program that decodes the program group for producing control signals for the valves.

5. 发明授权

US4807561A Semiconductor vapor phase growth apparatus 失效
标题翻译：半导体气相生长装置
公开(公告)号：US4807561A
公开(公告)日：1989-02-28
申请号：US48839
申请日：1987-05-12
申请人： Hitoshi Ebata
发明人： Hitoshi Ebata
IPC分类号： B01J12/02 , C30B25/16 , H01L21/00 , H01L21/205 , B05C11/00
CPC分类号： H01L21/67017 , C30B25/16 , C30B25/165
摘要： A vapor phase growth substrate is conveyed into a heated atomosphere, and vapor phase growth gas is supplied from a nozzle connected to a gas supply means to the substrate in the middle portion of conveyance. Process program information relating to the conveying speed of the substrate, the heating temperature, the gas flow rate and the types of the gases being used is stored, in advance, in a memory of a controller, the information is read from the memory, to adoptively control the conveying speed of the substrate, the heating temperature, and the gas supply.
摘要翻译：将气相生长衬底输送到加热的大气圈中，并且在输送的中间部分将气相生长气体从连接到气体供给装置的喷嘴供给到基板。将与基板的输送速度，加热温度，气体流量以及所使用的气体的种类有关的处理程序信息预先存储在控制器的存储器中，从存储器读出信息，过度控制基板的输送速度，加热温度和气体供应。

6. 发明授权

US5244500A Process control system of semiconductor vapor phase growth apparatus 失效
标题翻译：半导体气相生长装置的过程控制系统
公开(公告)号：US5244500A
公开(公告)日：1993-09-14
申请号：US418724
申请日：1989-10-03
申请人： Hitoshi Ebata
发明人： Hitoshi Ebata
IPC分类号： C23C16/52 , C23C16/54
CPC分类号： C23C16/52 , C23C16/54
摘要： In a semiconductor vapor phase growing apparatus of the type disclosed in U.S. Pat. No. 4,430,959 dated Feb. 14, 1984, the thickness and resistivity of the semiconductor grown on a substrate by vapor phase growing technique are controlled by a sequence program. The content of the sequence program is corrected to approach a target thickness and a target resistivity at each batch operation. In a modification, an auxiliary mass flow valve is provided for each main mass flow valve and when the main mass flow valve becomes faulty, it is substituted by the auxiliary mass flow valve so as to continue the normal operation of the vapor phase growing apparatus.
摘要翻译：在美国专利公开的类型的半导体气相生长装置中， 1984年2月14日的No.4,430,959中，通过气相生长技术在衬底上生长的半导体的厚度和电阻率由顺序程序控制。校正序列程序的内容以在每次批次操作时接近目标厚度和目标电阻率。在变型中，为每个主质量流量阀提供辅助质量流量阀，并且当主质量流量阀故障时，由辅助质量流量阀代替，以便继续气相生长装置的正常操作。

7. 发明授权

US4770121A Semiconductor vapor phase growing apparatus 失效
标题翻译：半导体气相生长装置
公开(公告)号：US4770121A
公开(公告)日：1988-09-13
申请号：US11423
申请日：1987-02-03
申请人： Hitoshi Ebata , Yoshizo Komiyama
发明人： Hitoshi Ebata , Yoshizo Komiyama
IPC分类号： H01L21/205 , C23C16/54 , H01L21/677 , H01L21/68 , C23C16/00
CPC分类号： H01L21/68 , C23C16/54 , H01L21/67745 , Y10S414/135
摘要： An apparatus for positioning a plurality of semiconductor substrates on a movable, support in a desired pattern, in a semiconductor vapor phase growing apparatus. A memory is provided for storing two dimensional data corresponding to the desired pattern. The desired pattern is predetermined by the sizes of the substrates and the space available on the flat support. A loading/unloading device loads and unloads the substrates on the support at positions corresponding to the two-dimensional data read from the memory. A positioning device positions the support so that the substrates can be loaded and unloaded at the predetermined positions. A control device synchronizes the movement of the loading/unloading device and the positioning device in accordance with the selected position so that the substrates are loaded and unloaded on the flat support in the desired pattern.
摘要翻译：一种用于在半导体气相生长装置中将多个半导体衬底定位在可移动的，以所需图案支撑的装置。提供存储器用于存储对应于期望图案的二维数据。期望的图案由基板的尺寸和平坦支撑件上可用的空间预先确定。装载/卸载装置在对应于从存储器读取的二维数据的位置的载体上载入和卸载基板。定位装置定位支撑件，使得可以在预定位置装载和卸载基板。控制装置根据所选择的位置使装载/卸载装置和定位装置的移动同步，使得基板以期望的图案装载和卸载在平坦的支架上。

8. 发明授权

US4982693A Semiconductor vapor phase growing apparatus 失效
标题翻译：半导体气相生长装置
公开(公告)号：US4982693A
公开(公告)日：1991-01-08
申请号：US472248
申请日：1983-03-04
申请人： Hitoshi Ebata
发明人： Hitoshi Ebata
IPC分类号： C23C16/52 , C30B25/16 , H01L21/205 , H01L21/31
CPC分类号： C30B25/16 , C23C16/52 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a semiconductor vapor phase growing apparatus wherein a semiconductor wafer is heated in a reaction furnace, and an output of a source for heating, the temperature of the wafer, and flow quantities of gases supplied to the reaction furnace for vapor phase growing a semiconductor on the wafer by a chemical reaction of the gases are controlled by a control unit according to a predetermined sequences, there are provided a temperature detector for detecting the temperature of the wafer and output control means controlling the output of the source according to a given reference value. The control unit is consitituted by memory means storing a program of executing the sequences and linearly raising and lowering the wafer temperature at a predetermined temperature gradient in a plurality of divided time lateral units by making different the rates of temperature change in respective time interval units, and a CPU for processing the program.
摘要翻译：在半导体气相生长装置中，其中半导体晶片在反应炉中被加热，并且用于加热的源的输出，晶片的温度和供应到反应炉的气体的气体量的气相生长半导体的流量通过控制单元根据预定顺序控制晶片的化学反应，提供了用于检测晶片的温度的温度检测器和根据给定参考值控制源的输出的输出控制装置。控制单元由存储装置存储的存储装置构成，其中通过使各个时间间隔单位中的温度变化率不同，存储执行序列的程序，并以多个划分的时间横向单元中的预定温度梯度线性地升高和降低晶片温度，以及用于处理程序的CPU。

9. 发明授权

US4772485A Process control system of semiconductor vapor phase growing apparatus 失效
标题翻译：半导体气相生长装置的过程控制系统
公开(公告)号：US4772485A
公开(公告)日：1988-09-20
申请号：US873119
申请日：1986-06-10
申请人： Hitoshi Ebata
发明人： Hitoshi Ebata
IPC分类号： C23C16/52 , C23C16/54 , C23C16/00
CPC分类号： C23C16/54 , C23C16/52
摘要： In a semiconductor vapor phase growing apparatus of the type disclosed in U.S. Pat. No. 4,430,959 dated Feb. 14, 1984, the thickness and resistivity of the semiconductor grown on a substrate by vapor phase growing technique are controlled by a sequence program. The content of the sequence program is corrected to approach a target thickness and a target resistivity at each batch operation. In a modification, an auxiliary mass flow valve is provided for each main mass flow valve and when the main mass flow valve becomes faulty, it is substituted by the auxiliary mass flow valve so as to continue the normal operation of the vapor phase growing apparatus.
摘要翻译：在美国专利公开的类型的半导体气相生长装置中， 1984年2月14日的No.4,430,959中，通过气相生长技术在衬底上生长的半导体的厚度和电阻率由顺序程序控制。校正序列程序的内容以在每次批次操作时接近目标厚度和目标电阻率。在变型中，为每个主质量流量阀提供辅助质量流量阀，并且当主质量流量阀故障时，由辅助质量流量阀代替，以便继续气相生长装置的正常操作。

10. 发明授权

US4116101A Automatic fret sawing machines 失效
标题翻译：自动磨床
公开(公告)号：US4116101A
公开(公告)日：1978-09-26
申请号：US808880
申请日：1977-06-22
申请人： Hideo Kawakami , Hitoshi Ebata
发明人： Hideo Kawakami , Hitoshi Ebata
IPC分类号： B27B19/06 , B23D49/00 , B27B19/02
CPC分类号： B23D49/007 , Y10T83/6593 , Y10T83/6875 , Y10T83/7055
摘要： In an automatic sawing machine wherein a workpiece is moved in two orthogonal directions by a profile control or a numerical control so as to cut a groove of a predetermined profile, the opposite ends of the fret saw blade are synchronously driven by independent pulse motors so as to direct the fret saw blade always in the tangential direction of the profile.
摘要翻译：在通过轮廓控制或数字控制在两个正交方向上移动工件以切割预定轮廓的凹槽的自动锯切机中，由独立的脉冲马达同步地驱动颤振锯片的相对端，以便以使磨损锯片始终处于轮廓的切线方向。

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