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    • 2. 发明授权
    • Photosensitive polyimide precursor
    • 感光聚酰亚胺前体
    • US4861854A
    • 1989-08-29
    • US200864
    • 1988-06-01
    • Akitoshi SugioTakao KawakiMakoto KobayashiKatsushige HayashiMasahito Watanabe
    • Akitoshi SugioTakao KawakiMakoto KobayashiKatsushige HayashiMasahito Watanabe
    • C08G73/10G03F7/037G03F7/038
    • G03F7/0387C08G73/10C08G73/1053C08G73/1064C08G73/1067C08G73/1071
    • A photosensitive polyimide precursor composed of the structural units (A) represented by the following general formula (I) and the structural units (B) represented by the following general formula (II), in which the ratio of the molar quantity of the structural units (A) to the sum of the molar quantity of the structural units (A) and that of the structural units (B) is 0.01 or greater, and having a viscosity of 100 cP or above as measured at 25.degree. C. in the state of a 10% by weight solution in N-methylpyrrolidone: ##STR1## wherein R.sub.1 represents a tetravalent aromatic hydrocarbon residue; R.sub.2 represents a divalent aromatic hydrocarbon residue; X, identical or different represents a halogen or an alkyl group; and m represents 0 or an integer from 1 to 4. The photosensitivity of the present photosensitive polyimide precursor is about 20 to 100 times that of conventional products. After heat dehydration cyclization, it shows a heat resistance of 400.degree. C. or above.
    • 由以下通式(I)表示的结构单元(A)和由以下通式(II)表示的结构单元(B))组成的光敏聚酰亚胺前体,其中结构单元 (A)和结构单元(B)的摩尔量的总和为0.01以上,粘度为100cP以上,在该状态下在25℃下测定 的10重量%的N-甲基吡咯烷酮溶液:其中R1表示四价芳烃残基;(I)其中R 1表示四价芳烃残基; R2表示二价芳烃残基; X相同或不同,表示卤素或烷基; m表示0或1〜4的整数。本发明的感光性聚酰亚胺前体的光敏度为常规产品的约20〜100倍。 热脱水环化后,其耐热性为400℃以上。
    • 3. 发明授权
    • Photosensitive polyimide precursor and process for producing the same
    • 感光聚酰亚胺前体及其制备方法
    • US4670535A
    • 1987-06-02
    • US875044
    • 1986-06-17
    • Akitoshi SugioTakao KawakiKatsushige Hayashi
    • Akitoshi SugioTakao KawakiKatsushige Hayashi
    • C08G73/00C08F290/00C08F299/02C08G73/10C08G73/12G03F7/038C08G16/00
    • C08G73/1082G03F7/0387
    • The photosensitive polyimide precursor of the invention has a recurring unit represented by the following general formula [I]: ##STR1## (R.sub.1 represents a tetravalent aromatic hydrocarbon residue; R.sub.2 and R.sub.3 each represent a divalent aromatic or aliphatic hydrocarbon residue; and R.sub.4 represents a divalent aromatic hydrocarbon residue represented by ##STR2## wherein R.sub.5, R.sub.6, R.sub.7, R.sub.8, R.sub.9, R.sub.10, R.sub.11 and R.sub.12, identical or different, each represent hydrogen atom, a halogen group or an alkyl group). The photosensitive polyimide precursor of the invention has a viscosity of 50 centipoises or above as measured at 23.degree. C. in the state of a 10% (by weight) solution in N,N-dimethylacetamide. Its photosensitivity is as high as about 20-100 times that of prior products. After heat cyclization, it exhibits a heat resistance of 400.degree. C. or above.The photosensitive polyimide precursor of the invention can be produced by subjecting a tetracarboxylic acid dianhydride and a diamino compound to a polycondensation reaction in an organic polar solvent.
    • 本发明的光敏聚酰亚胺前体具有由以下通式[I]表示的重复单元:(R 1表示四价芳烃残基; R 2和R 3各自表示二价芳族或脂族烃 R4代表由下式表示的二价芳烃残基:其中R5,R6,R7,R8,R9,R10,R11和R12相同或不同,分别代表氢原子,卤素基团或烷基)。 本发明的光敏聚酰亚胺前体在23℃下的粘度为10厘泊(N,N-二甲基乙酰胺)溶液的状态下的粘度为50厘泊或更高。 其光敏度高达现有产品的约20-100倍。 热环化后,其耐热性为400℃以上。 本发明的感光性聚酰亚胺前体可以通过在有机极性溶剂中使四羧酸二酐和二氨基化合物进行缩聚反应来制造。
    • 7. 发明授权
    • Semiconductor memory device and its testing method
    • 半导体存储器件及其测试方法
    • US06888774B2
    • 2005-05-03
    • US10224499
    • 2002-08-21
    • Takanobu SuzukiTamaki TsurudaKatsushige Hayashi
    • Takanobu SuzukiTamaki TsurudaKatsushige Hayashi
    • G01R31/28G11C11/401G11C11/409G11C29/00G11C29/28G11C29/34G11C8/00
    • G11C29/28G11C2029/2602
    • A semiconductor memory device is of a bank switching type having a plurality of memory array banks provided in a memory chip which can be switched from one to another for storage operation. The semiconductor memory device includes: a plurality of memory arrays in the memory array banks; an input/output circuit for transmitting information data between the memory arrays and the outside; a data bus for connecting between the memory arrays and the input/output circuit; and N-channel transistors provided across the data bus. The data bus consists of a plurality of adjacent lines. Each of N-channel transistors is connected at their drain to the corresponding lines of the data bus while at their source to the ground. When a multi-bit test is commenced for writing and reading data on the memory arrays, the N-channel transistors are turned on to connect the lines of the data bus to the ground.
    • 半导体存储器件是具有存储器芯片中的多个存储器阵列组的存储体交换型,其可以从一个切换到另一个用于存储操作。 半导体存储器件包括:存储器阵列中的多个存储器阵列; 用于在存储器阵列和外部之间传送信息数据的输入/输出电路; 用于连接存储器阵列和输入/输出电路的数据总线; 和跨越数据总线的N沟道晶体管。 数据总线由多条相邻线组成。 每个N沟道晶体管在其漏极处连接到数据总线的相应线,同时它们的源极处于接地。 当开始对存储器阵列上的数据写入和读取进行多位测试时,N沟道晶体管导通,将数据总线的线路连接到地。