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1. 发明授权

US06733592B2 High-temperature and high-pressure treatment device 失效
标题翻译：高温高压处理装置
公开(公告)号：US06733592B2
公开(公告)日：2004-05-11
申请号：US10142990
申请日：2002-05-13
申请人： Takao Fujikawa , Yoichi Inoue , Yutaka Narukawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yoshihiko Sakashita
发明人： Takao Fujikawa , Yoichi Inoue , Yutaka Narukawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yoshihiko Sakashita
IPC分类号： C23C1600
CPC分类号： C30B33/005 , H01L21/67109 , Y10S414/135
摘要： The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.
摘要翻译：本发明的目的是获得适于处理半导体晶片的小尺寸，高温和高压处理装置。本发明的高温高压装置旨在在高温高压气体的气氛中处理半导体晶片，并且包括在其下部具有用于将半导体晶片放置在其中的开口的压力容器并且，设置成能够垂直移动以便打开和关闭下部开口的下盖，用于将半导体晶片堆叠和分离到下盖上的晶片传送装置和附接到下盖的加热半导体的加热器晶圆

2. 发明授权

US06328560B1 Pressure processing apparatus for semiconductors 失效
标题翻译：半导体压力加工设备
公开(公告)号：US06328560B1
公开(公告)日：2001-12-11
申请号：US09496058
申请日：2000-02-02
申请人： Takao Fujikawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yutaka Narukawa
发明人： Takao Fujikawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yutaka Narukawa
IPC分类号： F27B504
CPC分类号： C23C14/5806 , C23C14/046 , C23C14/5886 , C30B33/005
摘要： An inner vessel 16 capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel 4, the inner vessel 16 is provided with a gas introducing portion 18 at a lower position thereof free from the effect a high temperature atmosphere formed by heaters 11 and 12, a filter 20 is disposed to the gas introducing portion 18 and a check valve 19 is disposed to the inner vessel 16 for allowing a gas to flow unidirectionally from the inside to the outside thereof.
摘要翻译：能够气密地围绕用于设置工件W的部分的内部容器16设置在压力容器4的内部，内部容器16在其下部设置有气体导入部18，而不产生高温气氛由加热器11和12形成，过滤器20设置在气体导入部分18上，止回阀19设置在内部容器16上，用于允许气体从内部单向流动到外部。

3. 发明授权

US06285010B1 Method and device for high-temperature, high-pressure treatment of semiconductor wafer 失效
标题翻译：用于半导体晶片高温高压处理的方法和装置
公开(公告)号：US06285010B1
公开(公告)日：2001-09-04
申请号：US09520218
申请日：2000-03-07
申请人： Takao Fujikawa , Yutaka Narukawa , Tsuneharu Masuda , Makoto Kadoguchi
发明人： Takao Fujikawa , Yutaka Narukawa , Tsuneharu Masuda , Makoto Kadoguchi
IPC分类号： A21B100
CPC分类号： H01L21/67109 , H01L21/76882
摘要： In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafers are vertically stacked in the treatment chamber, and the heater is arranged within the treatment chamber to perform the treatment while supplying a heating power by DC to the heater, whereby generation of particles from the heater is suppressed.
摘要翻译：在用于对压力容器中的晶片状半导体材料进行充电的半导体晶片的高温高压处理方法中，对诸如氩的惰性气体进行加压和加压，并且通过使用电阻加热来升高温度将晶片垂直堆叠在处理室中，并且加热器布置在处理室内，以通过DC向加热器提供加热功率进行处理，从而抑制来自加热器的颗粒的产生。

4. 发明授权

US06491518B1 Apparatus for high-temperature and high-pressure treatment 失效
标题翻译：高温高压处理设备
公开(公告)号：US06491518B1
公开(公告)日：2002-12-10
申请号：US09287558
申请日：1999-04-06
申请人： Takao Fujikawa , Takahiko Ishii , Yutaka Narukawa , Makoto Kadoguchi
发明人： Takao Fujikawa , Takahiko Ishii , Yutaka Narukawa , Makoto Kadoguchi
IPC分类号： F27D312
CPC分类号： H01L21/67109 , C30B31/10
摘要： An apparatus treating substrates in a high-temperature and high-pressure atmosphere, the substrates being treated in a batch that includes one lot of the substrates treated as a unit. A supporting jig is provided with means to support a plurality of the substrates in a shelved arrangement, the supporting jig and substrates being configured to enter and exit from a treating chamber within a pressure vessel as a single unit. The supporting jig is surrounded by a casing. In order to cope with the difficulty of oxidization of the substrates, an oxygen getter is disposed in either the supporting jig or in the casing. The pressure vessel includes an opening whereby a reducing gas can be introduced into the treating chamber. Further, the pressure vessel and a stocking portion of the substrates are installed within a housing such that contamination is further reduced and control is made easier.
摘要翻译：一种在高温高压气氛中处理基板的设备，其中一批处理的基板包括一批作为一个单元处理的基板。支撑夹具设置有用于将多个基板支撑在搁置布置中的装置，支撑夹具和基板构造成作为单个单元进入和离开压力容器内的处理室。支撑夹具被壳体包围。为了应对基板氧化的困难，将氧吸气剂设置在支撑夹具或壳体中。压力容器包括开口，由此可以将还原气体引入处理室。此外，压力容器和基材的放养部分安装在壳体内，使得污染进一步减小，并且控制变得更容易。

5. 发明授权

US06299739B1 Method of forming metal wiring film 有权
标题翻译：形成金属布线膜的方法
公开(公告)号：US06299739B1
公开(公告)日：2001-10-09
申请号：US09294031
申请日：1999-04-20
申请人： Takao Fujikawa , Takahiko Ishii , Yutaka Narukawa , Makoto Kadoguchi , Yasushi Mizusawa , Tomoyasu Kondou , Yuji Taguchi
发明人： Takao Fujikawa , Takahiko Ishii , Yutaka Narukawa , Makoto Kadoguchi , Yasushi Mizusawa , Tomoyasu Kondou , Yuji Taguchi
IPC分类号： C23C1414
CPC分类号： C23C14/046 , H01L21/2855 , H01L21/76877
摘要： This invention provides a method of forming a metal wiring film excellent in EM resistance and low electric resistance. In a method of forming a wiring structure by filming and covering the surface of the insulating film of a substrate to be treated having a hole or groove formed thereon with a metallic material such as copper, aluminum, silver or the like, thereby filling the hole or groove inner part with the metallic material to form a wiring structure, the substrate to be treated is exposed to a high temperature under a high-pressure gas atmosphere after the continuous filming and covering with the metallic material along the inner surface profile of the hole or groove, whereby the surface diffusion phenomenon of the metallic material is promoted to reform the metal film into a film structure as the surface area of the metal film is minimized.
摘要翻译：本发明提供一种形成EM电阻和低电阻优异的金属布线膜的方法。在通过对形成有孔或槽的待处理基板的绝缘膜的表面进行成膜和覆盖来形成布线结构的方法中在其上用金属材料如铜，铝，银等，由此用金属材料填充孔或槽内部以形成布线结构，待处理的基板在高压下暴露于高温气体气氛，连续成膜后沿着孔或槽的内表面轮廓与金属材料覆盖，从而促进金属材料的表面扩散现象，将金属膜重整为薄膜结构，作为金属的表面积电影最小化。

6. 发明授权

US5979306A Heating pressure processing apparatus 失效
标题翻译：加热压力处理装置
公开(公告)号：US5979306A
公开(公告)日：1999-11-09
申请号：US47402
申请日：1998-03-25
申请人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Takahiro Yuki , Yoshihiko Sakashita
发明人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Takahiro Yuki , Yoshihiko Sakashita
IPC分类号： B01J3/00 , B01J3/03 , B01J3/04 , H01L21/314 , H01L21/324 , H01L21/768 , B30B15/34
CPC分类号： B01J3/008 , B01J3/03 , B01J3/04 , H01L21/314
摘要： A heating pressure processing apparatus in which gas sealing property and safety can be ensured, and economic property can be improved in heating pressure processing of workpieces such as Si wafers sheet by sheet. A processing vessel 1 formed of vessel components 2, 3 is divided into at least two parts or more in the axial direction thereof and has a seal ring 9 provided in the divided parts of the vessel components 2, parts 3 in such a manner as to be replaceable. The vessel components 2, 3 have shaped parts forming a processing space 5 for a workpiece 4 when the divided parts are sealed through the seal ring 9, the vessel components 2, 3 also having cooling means 10 for the seal ring 9. A ram is provided 18 for pressing the vessel components 2, 3 in the axial direction of the vessel in order to ensure the sealing in the divided parts; and a gas introducing device 20 is provided for introducing a pressurized gas to the processing space 5 in order to process the workpiece.
摘要翻译：能够确保气体密封性和安全性的加热压力处理装置，并且可以逐张地提高诸如Si晶片的工件的加热压力加工的经济性。由容器部件2,3形成的处理容器1在其轴向上被分成至少两部分以上，并且具有设置在容器部件2，部件3的分割部分中的密封环9，可更换容器部件2,3具有成形部件，当分隔部件通过密封环9密封时，形成工件4的处理空间5，容器部件2,3也具有用于密封环9的冷却装置10。设置用于在容器的轴向方向上按压容器部件2,3，以确保分割部分的密封; 并且设置有用于将加压气体引入处理空间5以便处理工件的气体引入装置20。

7. 发明授权

US6077053A Piston type gas compressor 失效
标题翻译：活塞式气体压缩机
公开(公告)号：US6077053A
公开(公告)日：2000-06-20
申请号：US58185
申请日：1998-04-10
申请人： Takao Fujikawa , Takahiro Yuki , Yoshihiko Sakashita , Yutaka Narukawa , Itaru Masuoka
发明人： Takao Fujikawa , Takahiro Yuki , Yoshihiko Sakashita , Yutaka Narukawa , Itaru Masuoka
IPC分类号： F04B31/00 , F04B39/00 , F04B39/06 , F04B17/00
CPC分类号： F04B39/064 , F04B39/0005
摘要： It is intended to provide a piston type gas compressor capable of replacing a seal ring of a piston with a new one while preventing incorporation of metallic particles into a processing gas. A gas suction port 9 and a gas discharge port 10 are formed in a flange 2 of a cylinder 3 in communication with a gas compressing space H. With a plug 7 removed from an internally threaded hole 6A, a free piston 5, together with a seal ring 4, can be inserted into and removed from the cylinder 3 through the internally threaded hole 6A.
摘要翻译：旨在提供一种活塞式气体压缩机，其能够用新的活塞代替活塞的密封环，同时防止金属颗粒结合到处理气体中。在与气体压缩空间H连通的气缸3的凸缘2中形成气体吸入口9和气体排出口10.在从内螺纹孔6A除去塞子7的情况下，自由活塞5与密封环4可以通过内螺纹孔6A插入和移出圆筒3。

8. 发明授权

US4983112A Interlocking device for hot isostatic pressurizing equipment 失效
标题翻译：用于热等静压加压设备的联锁装置
公开(公告)号：US4983112A
公开(公告)日：1991-01-08
申请号：US382267
申请日：1989-07-20
申请人： Katsuhiro Uehara , Takahiko Ishii , Takao Fujikawa , Kuniaki Kanda , Yutaka Narukawa
发明人： Katsuhiro Uehara , Takahiko Ishii , Takao Fujikawa , Kuniaki Kanda , Yutaka Narukawa
IPC分类号： B22F3/15 , C21D1/74 , F27D7/06 , F27D21/00 , F27D21/04
CPC分类号： B30B11/002 , B22F3/15 , C21D1/74 , F27D21/04 , F27D7/06 , F27D2021/0078
摘要： An interlocking device for a HIP equipment that prevents possible damage to the HIP equipment arising from use of a furnace or processing gas in error and can control the oxygen concentration and pressure within the HIP equipment. The device includes a sensor for detecting a concentration of oxygen in the processing gas in a processing gas pipe system. If the sensor detects an excessively high oxygen concentration, a supply side interlocking mechanism closes a valve for the pipe system and disconnects a power source for a furnace in a high pressure vessel. A flow switch is connected to a safety pipe system having a safety device, and a thermocouple is provided for each of the safety and processing gas pipe systems and a relief pipe system. When the flow switch detects processing gas being spouted from the safety pipe system and/or when one of the temperature signals from the thermocouples exceeds a preset value, a relief side interlocking mechanism closes the processing gas pipe system, opens the relief pipe system, stops a gas compressor and disconnects the power source.
摘要翻译：一种用于HIP设备的互锁装置，其可防止由于使用炉子而产生的HIP设备或由于处理气体而导致的HIP设备的可能损坏，并且可以控制HIP设备内的氧气浓度和压力。该装置包括用于检测处理气体管道系统中处理气体中的氧浓度的传感器。如果传感器检测到氧浓度过高，则供给侧互锁机构关闭用于管道系统的阀，并且在高压容器中断开炉的电源。流量开关连接到具有安全装置的安全管系统，并且为每个安全和加工气体管道系统以及安全管系统提供热电偶。当流量开关检测到从安全管道系统喷出的处理气体和/或当来自热电偶的温度信号之一超过预设值时，泄压侧联锁机构关闭处理气体管道系统，打开排水管系统，停止气体压缩机并断开电源。

9. 发明授权

US5792271A System for supplying high-pressure medium gas 失效
标题翻译：供应高压中等气体的系统
公开(公告)号：US5792271A
公开(公告)日：1998-08-11
申请号：US845821
申请日：1997-04-28
申请人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
发明人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
IPC分类号： F27B17/00 , B01J3/02 , B01J4/00 , F17C7/00 , H01L23/02 , C23C14/80
CPC分类号： F17C7/00 , B01J3/02 , B01J4/008 , F17C2205/0332 , F17C2205/0341 , F17C2221/011 , F17C2221/016 , F17C2221/05 , F17C2223/0123 , F17C2227/0348 , F17C2227/0386 , F17C2227/048 , F17C2270/0518
摘要： The present invention provides a system for supplying a high-pressure medium gas suitable for processing a semiconductor to be processed by heating under isostatic pressure in a short cycle. The system includes a gas holder containing a high-pressure medium gas, a compressor for pressurizing the high-pressure medium gas supplied from the gas holder, a high-pressure vessel having a heater, an accumulator for storing the high-pressure medium gas pressurized by the compressor, a first evacuation unit for evacuating the inside of a pipeline for the high-pressure medium gas, a vacuum casing for holding the opening of the high-pressure vessel in a vacuum, a second evacuation unit for evacuating the inside of the vacuum casing, and a valve unit for connecting the high-pressure vessel and the accumulator so that series connection and parallel connection can be switched on the outlet side of the compressor.
摘要翻译：本发明提供了一种用于在短时间内以等压压力下加热适于处理待处理半导体的高压介质气体的系统。该系统包括含有高压介质气体的气体保持器，用于对从气体保持器供给的高压介质气体进行加压的压缩机，具有加热器的高压容器，用于将高压介质气体进行加压的储液器通过压缩机将用于排出高压介质气体的管道内部的第一抽空单元，用于将高压容器的开口保持在真空中的真空壳体，用于抽出高压介质气体的内部的第二抽空单元真空壳体和用于连接高压容器和蓄能器的阀单元，使得可以在压缩机的出口侧上切换串联和并联连接。

10. 发明授权

US5898727A High-temperature high-pressure gas processing apparatus 失效
标题翻译：高温高压气体处理设备
公开(公告)号：US5898727A
公开(公告)日：1999-04-27
申请号：US845822
申请日：1997-04-28
申请人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
发明人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
IPC分类号： F27B17/00 , C23C14/58 , H01L21/00 , F27D7/06
CPC分类号： C23C14/5806 , C23C14/5886 , H01L21/67017
摘要： The present invention provides a processing apparatus for eliminating pores in via holes of a silicon semiconductor. The apparatus includes a high-pressure vessel divided into at least two vessel component members in the axial direction thereof, at least one of which has a cooling unit, a frame for holding a load acting in the axial direction of the high-pressure vessel in processing a workpiece to be processed in the high-pressure vessel, an actuator for moving the vessel component members of the high-pressure vessel in the axial direction thereof so as to load and unload the workpiece, a sealing unit fitted to a portion for loading and unloading the workpiece, which is formed when the vessel component members are moved in the axial direction of the vessel, and a retractable cotter unit for transmitting a load acting in the axial direction of the high-pressure vessel to the frame.
摘要翻译：本发明提供一种用于消除硅半导体的通孔中的孔的处理装置。该装置包括在其轴向方向上分成至少两个容器部件的高压容器，其中至少一个具有冷却单元，用于保持在高压容器的轴向方向上作用的负载的框架在高压容器内加工待加工的工件，用于使高压容器的容器部件沿其轴向移动以便加载和卸载工件的致动器，安装到用于装载的部分的密封单元以及卸载当容器部件沿容器的轴向移动时形成的工件，以及用于将在高压容器的轴向方向上作用的负载传递到框架的伸缩开口单元。

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