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1. 发明授权

US08163852B2 Resist polymer and method for producing the polymer 有权
标题翻译：抗蚀聚合物和聚合物的制造方法
公开(公告)号：US08163852B2
公开(公告)日：2012-04-24
申请号：US12319492
申请日：2009-01-08
申请人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
发明人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
IPC分类号： C08F2/00
CPC分类号： G03F7/085 , G03F7/0397
摘要： Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined, by gel permeation chromatography (GPC).
摘要翻译：解决现有技术中的问题，提供了一种抗批聚物，反应堆对反应器和尺度尺度变化小的抗蚀剂聚合物，不含高聚物，溶解性和储存稳定性优异，适用于精细图案形成及其制造方法。本发明提供的抗蚀剂聚合物至少具有由酸分解成可溶于碱性显影剂的结构的重复单元和具有极性基团的重复单元以增强与基材的粘附性，其特征在于峰面积的分子量为100,000以上的高分子量成分（高分子量）为0.1％以下，通过凝胶渗透色谱法（GPC）测定的分子量分布中的全部峰面积。

2. 发明申请

US20090123868A1 Resist polymer and method for producing the polymer 有权
标题翻译：抗蚀聚合物和聚合物的制造方法
公开(公告)号：US20090123868A1
公开(公告)日：2009-05-14
申请号：US12319492
申请日：2009-01-08
申请人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
发明人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
IPC分类号： G03C1/492
CPC分类号： G03F7/085 , G03F7/0397
摘要： Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined, by gel permeation chromatography (GPC).
摘要翻译：解决现有技术中的问题，提供了一种抗批聚物，反应堆对反应器和尺度尺度变化小的抗蚀剂聚合物，不含高聚物，溶解性和储存稳定性优异，适用于精细图案形成及其制造方法。本发明提供的抗蚀剂聚合物至少具有由酸分解成可溶于碱性显影剂的结构的重复单元和具有极性基团的重复单元以增强与基材的粘附性，其特征在于峰面积的分子量为100,000以上的高分子量成分（高分子量）为0.1％以下，通过凝胶渗透色谱法（GPC）测定的分子量分布中的全部峰面积。

3. 发明申请

US20050287474A1 Resist polymer and method for producing the polymer 审中-公开
标题翻译：抗蚀聚合物和聚合物的制造方法
公开(公告)号：US20050287474A1
公开(公告)日：2005-12-29
申请号：US11203256
申请日：2005-08-12
申请人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
发明人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
IPC分类号： G03F7/004 , C08F2/00 , G03F7/039 , G03F7/085 , G03C1/492
CPC分类号： G03F7/085 , G03F7/0397
摘要： Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined by gel permeation chromatography (GPC).
摘要翻译：解决现有技术中的问题，提供了一种抗批聚物，反应堆对反应器和尺度尺度变化小的抗蚀剂聚合物，不含高聚物，溶解性和储存稳定性优异，适用于精细图案形成及其制造方法。本发明提供的抗蚀剂聚合物至少具有由酸分解成可溶于碱性显影剂的结构的重复单元和具有极性基团的重复单元以增强与基材的粘附性，其特征在于峰面积的分子量为100,000以上的高分子量成分（高分子量）为0.1％以下，通过凝胶渗透色谱法（GPC）测定的分子量分布中的全部峰面积。

4. 发明授权

US07045582B2 Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process 有权
标题翻译：用于半导体光刻的共聚物的制备方法和通过该方法可获得的用于半导体光刻的共聚物
公开(公告)号：US07045582B2
公开(公告)日：2006-05-16
申请号：US11005914
申请日：2004-12-06
申请人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
发明人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
IPC分类号： C08F2/38
CPC分类号： G03F7/0397
摘要： Provided are a preparation process of a copolymer for semiconductor lithography, suited for a film forming composition used for the formation of minute patterns necessary for semiconductor fabrication, which comprises carrying out radical polymerization of at least two monomers having an ethylenic double bond in the presence of a polymerization initiator in a polymerization solvent, while causing to exist, in the solution containing the monomers, a polymerization inhibitive component; and a copolymer for semiconductor lithography prepared by the above-described process, and contains no high polymer, has excellent storage stability and generates remarkably less defects in resist pattern when used for semiconductor lithography.
摘要翻译：提供一种半导体光刻用共聚物的制备方法，适用于形成半导体制造所需的微小图案的成膜组合物，其包括在存在下进行至少两种具有烯键式双键的单体的自由基聚合聚合引发剂在聚合溶剂中，同时存在于含有单体的溶液中的聚合抑制成分; 和通过上述方法制备的半导体光刻用共聚物，不含高分子聚合物，具有优异的保存稳定性，并且在用于半导体光刻时产生抗蚀剂图案的显着较少的缺陷。

5. 发明申请

US20050131184A1 Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process 有权
标题翻译：用于半导体光刻的共聚物的制备方法和通过该方法可获得的用于半导体光刻的共聚物
公开(公告)号：US20050131184A1
公开(公告)日：2005-06-16
申请号：US11005914
申请日：2004-12-06
申请人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
发明人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
IPC分类号： G03F7/033 , C08F2/06 , C08F2/38 , C08F2/40 , C08F118/02 , C08F220/18 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397
摘要： Provided are a preparation process of a copolymer for semiconductor lithography, suited for a film forming composition used for the formation of minute patterns necessary for semiconductor fabrication, which comprises carrying out radical polymerization of at least two monomers having an ethylenic double bond in the presence of a polymerization initiator in a polymerization solvent, while causing to exist, in the solution containing the monomers, a polymerization inhibitive component; and a copolymer for semiconductor lithography prepared by the above-described process, and contains no high polymer, has excellent storage stability and generates remarkably less defects in resist pattern when used for semiconductor lithography.
摘要翻译：提供一种半导体光刻用共聚物的制备方法，适用于形成半导体制造所需的微小图案的成膜组合物，其包括在存在下进行至少两种具有烯键式双键的单体的自由基聚合聚合引发剂在聚合溶剂中，同时存在于含有单体的溶液中的聚合抑制成分; 和通过上述方法制备的半导体光刻用共聚物，不含高分子聚合物，具有优异的保存稳定性，并且在用于半导体光刻时产生抗蚀剂图案的显着较少的缺陷。

6. 发明授权

US07838606B2 Production process of copolymer for semiconductor lithography 有权
标题翻译：半导体光刻用共聚物的生产工艺
公开(公告)号：US07838606B2
公开(公告)日：2010-11-23
申请号：US10929594
申请日：2004-08-31
申请人： Takanori Yamagishi , Ichiro Kato , Satoshi Yamaguchi
发明人： Takanori Yamagishi , Ichiro Kato , Satoshi Yamaguchi
IPC分类号： C08F2/00 , C08F118/02
CPC分类号： G03F7/094 , C08F6/12 , G03F7/0392 , G03F7/0397 , G03F7/091
摘要： Efficient and reproducible production of a copolymer for lithography, which has stable quality, with little lot-to-lot variations, and is suited for film-forming and coating compositions. Radical polymerization of a monomer, which contains at least one ethylenic double bond, with an initiator, in a solvent, and purification of the reaction mixture by precipitation and filtration, in a hermetically-closable single vessel divided by a filter medium, into a first section provided with fluid feeding means and agitating means, and a second section with fluid drawing means. Feeding the reaction mixture from the fluid feeding means into the first section of the vessel, containing a poor solvent, and contacting the reaction mixture with the poor solvent to precipitate a solid; and filtering the resulting fluid, containing the precipitated solid, through the filter medium, drawing the resultant filtrate through the fluid drawing means, and then separating the precipitated solid.
摘要翻译：用于光刻的共聚物的高效和可重复的制备，其质量稳定，具有很小的批次变化，并且适用于成膜和涂料组合物。将含有至少一个烯属双键的单体与引发剂在溶剂中的自由基聚合，以及通过沉淀和过滤将反应混合物在通过过滤介质分离的气密封闭的单一容器中纯化成第一具有流体供给装置和搅拌装置的部分，以及具有流体抽出装置的第二部分。将反应混合物从流体供给装置进料到容器的第一部分，含有不良溶剂，并使反应混合物与不良溶剂接触以沉淀出固体; 并通过过滤介质过滤含有沉淀固体的所得流体，将所得滤液通过流体萃取装置抽滤，然后分离出沉淀的固体。

7. 发明授权

US08030419B2 Process for producing polymer for semiconductor lithography 有权
标题翻译：半导体光刻用聚合物的制造方法
公开(公告)号：US08030419B2
公开(公告)日：2011-10-04
申请号：US12519371
申请日：2007-12-20
申请人： Takanori Yamagishi , Ichiro Kato , Satoshi Yamaguchi , Kouzo Osaki , Yasuo Shibata , Isao Magara , Hideki Omori , Kensuke Iuchi
发明人： Takanori Yamagishi , Ichiro Kato , Satoshi Yamaguchi , Kouzo Osaki , Yasuo Shibata , Isao Magara , Hideki Omori , Kensuke Iuchi
IPC分类号： C08F2/06
CPC分类号： C08F2/00 , C08F2/01 , C08F224/00 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： To provide a method for producing a polymer for semiconductor lithography which can attain high uniformity in the polymer from lot to lot. The method for producing a polymer for semiconductor lithography includes the step (P) of heating a polymerizable monomer and a polymerization initiator in a solvent, to thereby polymerize the monomer, the step (P) having the step of controlling a polymerization pressure by regulating a liquid level in a container (WO) which is disposed between a polymerization tank and the atmospheric air and which provides liquid sealing.
摘要翻译：提供一种用于半导体光刻的聚合物的制造方法，其可以从多个到多个聚合物中获得高均匀性。制造半导体光刻用聚合物的方法包括在溶剂中加热聚合性单体和聚合引发剂的步骤（P），从而使单体聚合，通过调节聚合压力的步骤（P）容器（WO）中的液面位于聚合槽和大气之间并提供液体密封。

8. 发明申请

US20100048848A1 PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY 有权
标题翻译：用于生产半导体光刻胶的聚合物的方法
公开(公告)号：US20100048848A1
公开(公告)日：2010-02-25
申请号：US12519371
申请日：2007-12-20
申请人： Takanori Yamagishi , Ichiro Kato , Satoshi Yamaguchi , Kouzo Osaki , Yasuo Shibata , Isao Magara , Hideki Omori , Kensuke Iuchi
发明人： Takanori Yamagishi , Ichiro Kato , Satoshi Yamaguchi , Kouzo Osaki , Yasuo Shibata , Isao Magara , Hideki Omori , Kensuke Iuchi
IPC分类号： C08F224/00
CPC分类号： C08F2/00 , C08F2/01 , C08F224/00 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： To provide a method for producing a polymer for semiconductor lithography which can attain high uniformity in the polymer from lot to lot.The method for producing a polymer for semiconductor lithography includes the step (P) of heating a polymerizable monomer and a polymerization initiator in a solvent, to thereby polymerize the monomer, the step (P) having the step of controlling a polymerization pressure by regulating a liquid level in a container (WO) which is disposed between a polymerization tank and the atmospheric air and which provides liquid sealing.
摘要翻译：提供一种用于半导体光刻的聚合物的制造方法，其可以从多个到多个聚合物中获得高均匀性。制造半导体光刻用聚合物的方法包括在溶剂中加热聚合性单体和聚合引发剂的步骤（P），从而使单体聚合，通过调节聚合压力的步骤（P）容器（WO）中的液面位于聚合槽和大气之间并提供液体密封。

9. 发明申请

US20050096447A1 Production process of copolymer for semiconductor lithography 有权
标题翻译：半导体光刻用共聚物的生产工艺
公开(公告)号：US20050096447A1
公开(公告)日：2005-05-05
申请号：US10929594
申请日：2004-08-31
申请人： Takanori Yamagishi , Ichiro Kato , Satoshi Yamaguchi
发明人： Takanori Yamagishi , Ichiro Kato , Satoshi Yamaguchi
IPC分类号： C08F6/00 , C08F6/12 , C08F118/02 , C08F220/06 , G03F7/004 , G03F7/039 , G03F7/09
CPC分类号： G03F7/094 , C08F6/12 , G03F7/0392 , G03F7/0397 , G03F7/091
摘要： Efficient and reproducible production of a copolymer for lithography, which has stable quality, with little lot-to-lot variations, and is suited for film-forming and coating compositions. Radical polymerization of a monomer, which contains at least one ethylenic double bond, with an initiator, in a solvent, and purification of the reaction mixture by precipitation and filtration, in a hermetically-closable single vessel divided by a filter medium, into a first section provided with fluid feeding means and agitating means, and a second section with fluid drawing means. Feeding the reaction mixture from the fluid feeding means into the first section of the vessel, containing a poor solvent, and contacting the reaction mixture with the poor solvent to precipitate a solid; and filtering the resulting fluid, containing the precipitated solid, through the filter medium, drawing the resultant filtrate through the fluid drawing means, and then separating the precipitated solid.
摘要翻译：用于光刻的共聚物的高效和可重复的制备，其质量稳定，具有很小的批次变化，并且适用于成膜和涂料组合物。将含有至少一个烯属双键的单体与引发剂在溶剂中的自由基聚合，以及通过沉淀和过滤将反应混合物在通过过滤介质分离的气密封闭的单一容器中纯化成第一具有流体供给装置和搅拌装置的部分，以及具有流体抽出装置的第二部分。将反应混合物从流体供给装置进料到容器的第一部分，含有不良溶剂，并使反应混合物与不良溶剂接触以沉淀出固体; 并通过过滤介质过滤含有沉淀固体的所得流体，将所得滤液通过流体萃取装置抽滤，然后分离出沉淀的固体。

10. 发明授权

US08859180B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer 有权
标题翻译：用于半导体光刻的共聚物和组合物以及用于制备共聚物的方法
公开(公告)号：US08859180B2
公开(公告)日：2014-10-14
申请号：US12311993
申请日：2007-10-19
申请人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
发明人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
IPC分类号： G03F7/039 , C08F2/06 , C08F224/00 , C08F220/18 , C08F216/38
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F2220/283 , G03F7/2041
摘要： [Task to Be Achieved]To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer.[Means for Achievement]The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.
摘要翻译： [要实现的任务]为了提供半导体光刻的化学放大型正共聚物，其消除了现有技术的问题，具有高显影对比度，并且在精细图案形成中具有优异的分辨率; 含有共聚物的半导体光刻用组合物; 和共聚物的制造方法。 [实现方法]本发明的半导体光刻用共聚物是至少具有（A）具有由酸不稳定，溶解抑制基团保护的碱溶性基团的结构的重复单元的共聚物，（B）具有内酯结构的重复基团和（C）具有醇羟基的重复基团，其特征在于通过将共聚物溶解在溶剂中而使酸值为0.01mmol / g以下，使用溴百里酚蓝作为指示剂的碱金属氢氧化物溶液中和滴定溶液。

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