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1. 发明申请

US20080283230A1 HEAT EXCHANGER 有权
标题翻译：热交换器
公开(公告)号：US20080283230A1
公开(公告)日：2008-11-20
申请号：US12113521
申请日：2008-05-01
申请人： Takanari INATOMI , Shigeki MARUYAMA , Yuko KITAJIMA , Kenjiro FUKAMICHI , Hiroshi NAKAMURA
发明人： Takanari INATOMI , Shigeki MARUYAMA , Yuko KITAJIMA , Kenjiro FUKAMICHI , Hiroshi NAKAMURA
IPC分类号： F28D7/10
CPC分类号： F28D9/0006 , F28D7/0025 , F28D7/1676
摘要： A heat exchanger includes a vertical pressure vessel having a air-tight structure, one and another sets of fluid inlet/outlet ports provided to upper and lower portion of the vertical pressure vessel, respectively, and a heat exchanging module disposed in the pressure vessel to a portion between both sets of the fluid inlet/outlet ports, the heat exchanging module being formed by stacking a number of heat exchanging elements. At least one set of the fluid inlet/outlet ports are configured to provide a header composed of a pipe structural member having a bottom portion closed and a heat insulating material attached to an inner surface of the pipe structural member, and end portions of fluid flowing pipes communicating with the heat exchanging module are opened at the closed fluid inlet/outlet ports in the header.
摘要翻译：热交换器包括具有气密结构的垂直压力容器，分别设置在垂直压力容器的上部和下部的一组和另一组流体入口/出口，以及设置在压力容器内的热交换模块两组流体入口/出口之间的部分，热交换模块通过堆叠多个热交换元件而形成。至少一组流体入口/出口构造成提供由具有底部封闭的管道结构构件和附接到管道结构构件的内表面的绝热材料构成的集管，以及流体流动的端部与热交换模块连通的管道在集管中的封闭流体入口/出口处打开。

2. 发明申请

US20100067645A1 REFLECTOR SYSTEM OF FAST REACTOR 审中-公开
标题翻译：快速反应器的反射器系统
公开(公告)号：US20100067645A1
公开(公告)日：2010-03-18
申请号：US12562815
申请日：2009-09-18
申请人： Toshiro SAKAI , Akio TAKAHASHI , Takanari INATOMI , Hiroshi NAKAMURA , Masafumi KOMAI , Mikio IZUMI
发明人： Toshiro SAKAI , Akio TAKAHASHI , Takanari INATOMI , Hiroshi NAKAMURA , Masafumi KOMAI , Mikio IZUMI
IPC分类号： G21C5/00
CPC分类号： G21C7/28 , G21C1/02 , G21C11/06 , Y02E30/34 , Y02E30/39
摘要： A reflector system of a fast reactor according to the present invention comprises a reflector having a neutron reflecting portion reflecting a neutron radiated from a reactor core, and a cavity portion provided above the neutron reflecting portion and having a lower neutron reflecting capacity than a coolant, and a reflector drive apparatus coupled to the reflector and moving the reflector in a vertical direction. The reflector drive apparatus has a driving portion which is coupled to the reflector via a drive shaft, and drives the reflector up and down, and a load sensing portion which is provided between the driving portion and the drive shaft, and senses a load of the reflector. A detecting portion receiving a load signal from the load sensing portion so as to detect a breakage of the cavity portion of the reflector is connected to the load sensing portion.
摘要翻译：根据本发明的快堆的反射器系统包括具有反射从反应堆芯辐射的中子的中子反射部分的反射器和设置在中子反射部分上方并具有比冷却剂更低的中子反射能力的空腔部分，以及反射器驱动装置，其耦合到反射器并在垂直方向上移动反射器。反射器驱动装置具有驱动部，该驱动部经由驱动轴与反射体连接，并且上下驱动反射体，负载感测部设置在驱动部和驱动轴之间，感测负载反射器。接收来自负载感测部分的负载信号以检测反射器的空腔部分的断裂的检测部分连接到负载感测部分。

3. 发明公开

US20240277232A1 SCREENING APPARATUS FOR COLD SYNDROME-POSITIVE PEOPLE 审中-公开
公开(公告)号：US20240277232A1
公开(公告)日：2024-08-22
申请号：US18570779
申请日：2023-05-29
申请人： Hiroshi NAKAMURA
发明人： Hiroshi NAKAMURA
IPC分类号： A61B5/01 , A61B5/00
CPC分类号： A61B5/01 , A61B5/7246
摘要： A screening apparatus for cold syndrome-positive people includes an EIFU temperature measurer having right and left temperature measuring parts; a calculation unit of that calculates a difference value between a right and left EIFU temperatures measured with the right and left temperature measuring parts; an input unit of left/right discomfort to which right discomfort information and left discomfort information on discomfort in a right pharynx region and a left pharynx region perceived by the cold syndrome positive person are input; a calculation unit of left/right discomfort that calculates a degree of coincidence between the right discomfort information and the left discomfort information; an evaluation unit that outputs information of severity based on the calculated difference value and the degree of coincidence; and a reporting unit that notifies severity of the cold syndrome-positive person based on the information of severity.

4. 发明申请

US20120243322A1 SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULTS OF INTERNAL OPERATIONS 有权
标题翻译：半导体集成电路适用于输出通过/内部运行失败的结果
公开(公告)号：US20120243322A1
公开(公告)日：2012-09-27
申请号：US13489977
申请日：2012-06-06
申请人： Hiroshi NAKAMURA , Kenichi Imamiya , Toshio Yamamura , Koji Hosono , Koichi Kawai
发明人： Hiroshi NAKAMURA , Kenichi Imamiya , Toshio Yamamura , Koji Hosono , Koichi Kawai
IPC分类号： G11C16/06
CPC分类号： G11C16/3459 , G06F3/0659 , G06F12/0246 , G11C7/065 , G11C7/1006 , G11C7/1051 , G11C7/106 , G11C7/1063 , G11C16/06 , G11C16/08 , G11C16/10 , G11C16/26 , G11C2207/104 , G11C2216/14
摘要： In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the semiconductor integrated circuit information indicating whether or not the first operation is being executed and information indicating whether or not the second operation is executable.
摘要翻译：在半导体集成电路中，内部电路能够同时执行第一操作和第二操作，并且输出电路向半导体集成电路的外部输出指示是否正在执行第一操作的信息以及指示是否或者不是第二操作是可执行的。

5. 发明申请

US20120126835A1 FUEL SENSOR 失效
标题翻译：燃油传感器
公开(公告)号：US20120126835A1
公开(公告)日：2012-05-24
申请号：US13293405
申请日：2011-11-10
申请人： Hiroshi NAKAMURA
发明人： Hiroshi NAKAMURA
IPC分类号： G01R27/26
CPC分类号： G01N33/2852 , F02D2200/0611
摘要： An outer electrode projects from an opening, which is formed in an upper inner wall of a fuel passage, into the fuel passage. The fuel passage is adapted to conduct fuel generally in a horizontal direction. The outer electrode includes a fuel chamber in an inside of the outer electrode. An inner electrode is placed in the fuel chamber. A sensing circuit senses an alcohol concentration of the fuel based on an electrical property between the outer electrode and the inner electrode and a fuel temperature, which is sensed with a thermistor. The outer electrode includes a blocking portion and communication holes. The blocking portion limits intrusion of air bubbles, which flow along the upper inner wall of the fuel passage, into the communication holes.
摘要翻译：外部电极从形成在燃料通路的上部内壁的开口突出到燃料通路内。燃料通道适于一般沿水平方向传导燃料。外部电极在外部电极的内部包括燃料室。内部电极放置在燃料室中。感测电路基于外部电极和内部电极之间的电气特性以及用热敏电阻感测的燃料温度来感测燃料的醇浓度。外电极包括阻挡部分和连通孔。阻挡部分限制沿着燃料通道的上内壁流动的气泡的入侵到连通孔中。

6. 发明申请

US20100134178A1 BOOST CIRCUIT 有权
标题翻译：升压电路
公开(公告)号：US20100134178A1
公开(公告)日：2010-06-03
申请号：US12700192
申请日：2010-02-04
申请人： Hiroshi NAKAMURA
发明人： Hiroshi NAKAMURA
IPC分类号： G05F3/02
CPC分类号： H02M3/073 , H02M2003/075 , H02M2003/077 , H02M2003/078
摘要： A boost circuit includes: first transistors connected in series between a voltage input node and a voltage output node to constitute a charge transfer circuit; and first capacitors, one ends of which are coupled to the respective connection nodes between the first transistors, the other ends thereof being applied with clocks with plural phases, wherein a gate of a certain stage transistor corresponding to one of the first transistors in the charge transfer circuit is coupled to a drain of another stage transistor corresponding to another one of the first transistors, which is disposed nearer to the voltage output node than the certain stage transistor and driven by the same phase clock as that of the certain stage transistor, the certain stage transistor being disposed nearer to the voltage output node than an initial stage transistor.
摘要翻译：升压电路包括：串联连接在电压输入节点和电压输出节点之间的第一晶体管，构成电荷转移电路; 以及第一电容器，其一端耦合到第一晶体管之间的相应连接节点，其另一端被施加具有多相的时钟，其中一个级晶体管的栅极对应于电荷中的第一晶体管之一传输电路耦合到与第一晶体管中的另一个晶体管相对应的另一级晶体管的漏极，第一晶体管的布置比特定级晶体管更靠近电压输出节点并且由与某一级晶体管相同的相位时钟驱动，特定级晶体管被设置为比初始级晶体管更靠近电压输出节点。

7. 发明申请

US20100110790A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20100110790A1
公开(公告)日：2010-05-06
申请号：US12632203
申请日：2009-12-07
申请人： Tomoharu TANAKA , Hiroshi NAKAMURA , Toru TANZAWA
发明人： Tomoharu TANAKA , Hiroshi NAKAMURA , Toru TANZAWA
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C7/1048 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C11/565 , G11C16/26 , G11C2211/5642
摘要： A semiconductor memory device comprises memory cells, a bitline connected to the memory cells, a read circuit including a precharge circuit, and a first transistor connected between the bitline and the read circuit, wherein a first voltage is applied to a gate of the first transistor when the precharge circuit precharges the bitline, and a second voltage which is different from the first voltage is applied to the gate of the first transistor when the read circuit senses a change in a voltage of the bitline.
摘要翻译：半导体存储器件包括存储器单元，连接到存储器单元的位线，包括预充电电路的读取电路和连接在位线和读取电路之间的第一晶体管，其中第一电压施加到第一晶体管的栅极当预充电电路对位线进行预充电，并且当读取电路感测到位线的电压变化时，与第一电压不同的第二电压被施加到第一晶体管的栅极。

8. 发明申请

US20090082563A1 MOLECULAR ASSEMBLY 有权
标题翻译：分子装配
公开(公告)号：US20090082563A1
公开(公告)日：2009-03-26
申请号：US12237795
申请日：2008-09-25
申请人： Kazuhiko UMEMOTO , Hisato TAKEUCHI , Hiroshi NAKAMURA , Arimitsu USUKI , Makoto FUJITA
发明人： Kazuhiko UMEMOTO , Hisato TAKEUCHI , Hiroshi NAKAMURA , Arimitsu USUKI , Makoto FUJITA
IPC分类号： C07F17/02
CPC分类号： C07F15/0066
摘要： A molecular assembly comprising a host metal complex with a space formed therein, and compounds having substituents enclosed in the metal complex within the space and molecular chains bonded to the substituents and extending to the exterior of the metal complex, wherein two or more substituents are enclosed in the same space of the metal complex.
摘要翻译：包含其中形成有空间的主体金属络合物的分子组合物，以及封闭在空间内的金属络合物中的取代基和与取代基键合并延伸至金属络合物外部的分子链的化合物，其中封闭了两个或多个取代基在同一个空间的金属复合体。

9. 发明申请

US20080165581A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING NON-SELECTED WORD LINES ADJACENT TO SELECTED WORD LINES BEING CHARGED AT DIFFERENT TIMING FOR PROGRAM DISTURB CONTROL 有权
标题翻译：具有非选定字线的非易失性半导体存储器件，与选择的字线相连，在不同的时序上对程序干扰控制进行充电
公开(公告)号：US20080165581A1
公开(公告)日：2008-07-10
申请号：US12048442
申请日：2008-03-14
申请人： Hiroshi NAKAMURA , Tomoharu Tanaka
发明人： Hiroshi NAKAMURA , Tomoharu Tanaka
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C16/10 , G11C16/30
摘要： A non-volatile semiconductor memory device comprises a memory cell array of data-rewritable non-volatile memory cells or memory cell units containing the memory cells, and a plurality of word lines each commonly connected to the memory cells on the same row in the memory cell array. In write pulse applying during data writing, a high voltage for writing is applied to a selected word line, and an intermediate voltage for writing is applied to at least two of non-selected word lines. The beginning of charging a first word line located between the selected word line and a source line to a first intermediate voltage for writing is followed by the beginning of charging a second word line located between the selected word line and a bit line contact to a second intermediate voltage for writing.
摘要翻译：非易失性半导体存储器件包括数据可重写非易失性存储器单元的存储单元阵列或包含存储单元的存储单元单元，以及多个字线，每个字线共同连接到存储器中相同行上的存储器单元单元格阵列。在数据写入期间的写入脉冲施加中，写入用的高电压被施加到所选择的字线，并且用于写入的中间电压被施加到至少两个未被选择的字线。将位于所选择的字线和源极线之间的第一字线充电到用于写入的第一中间电压的开始之后，将位于所选择的字线和位线接触之间的第二字线开始充电到第二写入中间电压。

10. 发明申请

US20120091610A1 DEVELOPING BLADE AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：开发叶片及其制造方法
公开(公告)号：US20120091610A1
公开(公告)日：2012-04-19
申请号：US13334289
申请日：2011-12-22
申请人： Hiroshi NAKAMURA , Junji Tsuboi , Shinji Souma
发明人： Hiroshi NAKAMURA , Junji Tsuboi , Shinji Souma
IPC分类号： B29C33/72 , B29C39/10 , B29C39/22
CPC分类号： G03G15/0812 , Y10T428/24355 , Y10T428/24942 , Y10T428/31
摘要： A method for manufacturing a developing blade including a blade member located along one side edge of a support member, comprising providing a top mold with a cavity, sandblasting the cavity with an abrasive in a range of #150 to #1000, clamping together the top mold and a bottom mold while the top mold is in alignment with the bottom mold while at least a part of the support member is positioned in the cavity, and pouring a molding material from a gate to fill the cavity.
摘要翻译：一种用于制造包括沿着支撑构件的一个侧边缘设置的刀片构件的显影刀片的方法，包括提供具有空腔的上模具，用＃150至＃1000范围内的研磨剂对所述腔进行喷砂，将所述顶部模具和底模，同时顶模与底模对准，而支撑构件的至少一部分位于空腔中，并且从浇口浇注模制材料以填充空腔。

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