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1. 发明授权

US5487903A Method for improving the qualities of meat and meat piece treated thereby 失效
标题翻译：改善由此处理的肉和肉片质量的方法
公开(公告)号：US5487903A
公开(公告)日：1996-01-30
申请号：US358308
申请日：1994-12-19
申请人： Takaaki Yokoyama , Hirotaka Sasaki , Yumiko Ohno , Kentaro Nakajima , Yasuhiro Miura , Hideki Mori
发明人： Takaaki Yokoyama , Hirotaka Sasaki , Yumiko Ohno , Kentaro Nakajima , Yasuhiro Miura , Hideki Mori
IPC分类号： A23L13/00 , A23B4/10 , A23L13/70 , A23L1/318
CPC分类号： A23B4/10 , A23L13/72
摘要： A method for improving the qualities of meat which comprises treating a meat piece with an ester represented by the following formula (1): ##STR1## wherein one of R.sup.1 and R.sup.2 represents a saturated or unsaturated monocarboxylic acid residue having 2 to 24 carbon atoms while the other represents a dicarboxylic acid residue;a meat piece which has been treated by this method, and a composition comprising the ester and a protease are disclosed. By treating a meat (for example, cattle meat, fowl meat) in accordance with the method of the present invention, a meat piece having a tender texture and a high juiciness can be obtained, in particular, in the case of a meat piece of a certain size or larger or minced meat.
摘要翻译：一种改善肉质的方法，其特征在于，用下述式（1）表示的酯处理肉片：其中，R1和R2中的一个表示具有2〜24个碳原子的饱和或不饱和一元羧酸残基而另一个代表二羧酸残基; 已经通过该方法处理过的肉片和包含酯和蛋白酶的组合物被公开。通过根据本发明的方法处理肉类（例如牛肉，禽肉），可以获得具有嫩质地和高多汁性的肉块，特别是在肉片一定大小或较大或切肉。

2. 发明授权

US07291506B2 Magnetic memory device and method of manufacturing the same 有权
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US07291506B2
公开(公告)日：2007-11-06
申请号：US11171323
申请日：2005-07-01
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L21/00
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.
摘要翻译：一种制造磁存储器件的方法包括在衬底上形成绝缘层，在绝缘层上形成下电极，在下电极的上表面上形成磁阻膜，该磁阻膜包括绝缘屏障层和层叠在绝缘阻挡层的两侧的多个磁性膜，使用掩模层作为掩模将掩模层堆叠在磁阻膜上，对磁阻膜进行离子蚀刻，从而形成磁电阻元件，在掩模的上表面，磁阻元件和下电极上形成绝缘膜，并用离子束蚀刻绝缘膜，使得磁阻元件的侧表面露出。

3. 发明授权

US07140096B2 Method of manufacturing a magnetoresistance effect device 失效
标题翻译：制造磁阻效应器件的方法
公开(公告)号：US07140096B2
公开(公告)日：2006-11-28
申请号：US10626707
申请日：2003-07-25
申请人： Tatsuya Kishi , Shigeki Takahashi , Kentaro Nakajima , Minoru Amano , Masayuki Sagoi , Yoshiaki Saito
发明人： Tatsuya Kishi , Shigeki Takahashi , Kentaro Nakajima , Minoru Amano , Masayuki Sagoi , Yoshiaki Saito
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01L43/08 , Y10S428/90 , Y10T29/49043 , Y10T29/49048 , Y10T29/4905 , Y10T29/49052 , Y10T428/24942 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second ferromagnetic body on the nonmagnetic dielectric layer; etching part of an external region of a predetermined ferromagnetic tunnel junction region using a first linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region; and etching another part of the external region of the predetermined ferromagnetic tunnel junction region using a second linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region and intersecting with the first linear mask pattern.
摘要翻译：一种制造磁阻效应器件的方法，包括：在第一铁磁体上形成第一铁磁体，非磁性介质层和非磁介质层上的第二铁磁体; 使用穿过所述预定铁磁隧道结区域的第一线性掩模图案来蚀刻预定铁磁隧道结区域的外部区域的一部分; 以及使用穿过所述预定铁磁隧道结区并与所述第一线性掩模图案相交的第二线性掩模图案来蚀刻所述预定铁磁隧道结区域的外部区域的另一部分。

4. 发明授权

US06995962B2 Ferromagnetic double tunnel junction element with asymmetric energy band 有权
标题翻译：具有不对称能带的铁磁双隧道结元件
公开(公告)号：US06995962B2
公开(公告)日：2006-02-07
申请号：US10968336
申请日：2004-10-20
申请人： Yoshiaki Saito , Masayuki Sagoi , Minoru Amano , Kentaro Nakajima , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Saito , Masayuki Sagoi , Minoru Amano , Kentaro Nakajima , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B5/3954 , G11C11/15 , G11C11/16 , H01L27/224 , H01L27/228
摘要： There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.
摘要翻译：提供了一种磁阻效应元件，包括第一被钉扎铁磁层，面对第一被钉扎铁磁层的第二钉扎铁磁层，第一和第二钉扎铁磁层彼此面对的表面区域在组成上彼此不同，自由铁磁性介于第一和第二被钉扎铁磁层之间的介电层，介于第一被钉扎铁磁层和自由铁磁层之间的第一隧道势垒层以及介于第二钉扎铁磁层与自由铁磁层之间的第二隧道势垒层。

5. 发明授权

US06965138B2 Magnetic memory device and method of manufacturing the same 有权
公开(公告)号：US06965138B2
公开(公告)日：2005-11-15
申请号：US10702574
申请日：2003-11-07
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L27/105 , C23F4/00 , G11C11/00 , G11C11/02 , H01F10/32 , H01F41/30 , H01L21/336 , H01L21/8246 , H01L27/00 , H01L27/22 , H01L29/76 , H01L31/119 , H01L43/08 , H01L43/12
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

6. 发明授权

US06916677B2 Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof 失效
标题翻译：具有虚拟磁阻效应元件的磁存储装置及其制造方法
公开(公告)号：US06916677B2
公开(公告)日：2005-07-12
申请号：US10798571
申请日：2004-03-12
申请人： Kentaro Nakajima , Minoru Amano
发明人： Kentaro Nakajima , Minoru Amano
IPC分类号： H01L27/105 , G11C7/00 , G11C11/15 , G11C11/16 , H01L21/00 , H01L21/8246 , H01L27/22 , H01L29/76 , H01L43/08
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16
摘要： A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements which are arranged in the memory cell portion and function as memory elements, and a plurality of second magnetoresistive effect elements which are arranged in at least a part of the peripheral circuit portion and function as dummies, wherein a sum total of occupying areas of the second magnetoresistive effect elements is 5% to 80% of the peripheral circuit portion.
摘要翻译：磁存储器件包括存储单元部分，位于存储单元部分附近的外围电路部分，多个第一磁阻效应元件，被布置在存储单元部分中并用作存储元件，并且多个第二磁阻效应元件布置在外围电路部分的至少一部分中并用作虚拟物，其中第二磁阻效应元件的占据面积的总和为外围电路部分的5％至80％。

7. 发明授权

US06803619B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US06803619B2
公开(公告)日：2004-10-12
申请号：US10615920
申请日：2003-07-10
申请人： Keiji Hosotani , Kentaro Nakajima
发明人： Keiji Hosotani , Kentaro Nakajima
IPC分类号： H01L2976
CPC分类号： H01L27/228 , B82Y10/00
摘要： A magnetic memory device capable of achieving high reliability and superior operation characteristics of tunneling magneto-resistive (TMR) elements is provided. This magnetic memory device includes a semiconductor substrate, a transistor which is formed above the semiconductor substrate, and a TMR element which is formed on or above an interlayer dielectric film that covers the transistor of the substrate. The device also includes a first wiring line which is buried in the interlayer dielectric film and connected to a source/drain diffusion layer of the transistor, a second wiring line which is buried under the TMR element while overlying the first wiring line within the interlayer dielectric film and which is used to apply a current-created magnetic field to the TMR element during writing, and a third wiring line connected to an upper surface of the TMR element and provided to cross the second wiring line. The third wiring line is for applying a current magnetic field to the TMR element during writing and also for causing a cell current to flow during reading. The second wiring line is formed by patterning techniques so that its both edges are placed outside of a pattern of the TMR element.
摘要翻译：提供了能够实现隧道磁阻（TMR）元件的高可靠性和优异的操作特性的磁存储器件。该磁存储器件包括半导体衬底，形成在半导体衬底上方的晶体管，以及形成在覆盖衬底晶体管的层间绝缘膜上或之上的TMR元件。该器件还包括埋在层间电介质膜中并连接到晶体管的源极/漏极扩散层的第一布线，埋在TMR元件下面的第二布线，同时覆盖层间电介质中的第一布线并且其用于在写入期间向TMR元件施加电流产生的磁场，以及第三布线，连接到TMR元件的上表面并且被提供以跨越第二布线。第三布线用于在写入期间向TMR元件施加电流磁场，并且还用于在读取期间使单元电流流动。第二布线通过图案化技术形成，使得它的两个边缘被放置在TMR元件的图案之外。

8. 发明授权

US07405087B2 Magnetic memory device and method of manufacturing the same 失效
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US07405087B2
公开(公告)日：2008-07-29
申请号：US11135337
申请日：2005-05-24
申请人： Kentaro Nakajima , Keiji Hosotani
发明人： Kentaro Nakajima , Keiji Hosotani
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/222 , H01L27/228
摘要： A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.
摘要翻译：磁存储器件包括沿第一方向延伸的第一互连，沿与第一方向不同的第二方向延伸的第二互连;布置在第一和第二互连之间的交叉点处的磁阻元件，以及金属层，其连接到磁阻元件并具有与磁阻元件的侧表面部分重合的侧表面。

9. 发明授权

US07209382B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US07209382B2
公开(公告)日：2007-04-24
申请号：US11305203
申请日：2005-12-19
申请人： Yoshihisa Iwata , Kentaro Nakajima
发明人： Yoshihisa Iwata , Kentaro Nakajima
IPC分类号： G11C11/14 , G11C11/15 , G11C7/22 , G11C7/12 , G11C8/18 , G11C8/08
CPC分类号： G11C11/16
摘要： In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.
摘要翻译：在磁性随机存取存储器（MRAM）中，将设定数据确定为写入字/位线电流的供给/截止时间，幅度和时间变化（电流波形）。写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

10. 发明授权

US07050325B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US07050325B2
公开(公告)日：2006-05-23
申请号：US10438015
申请日：2003-05-15
申请人： Yoshihisa Iwata , Kentaro Nakajima
发明人： Yoshihisa Iwata , Kentaro Nakajima
IPC分类号： G11C11/14 , G11C11/15 , G11C7/00
CPC分类号： G11C11/16
摘要： In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.
摘要翻译：在磁性随机存取存储器（MRAM）中，将设定数据确定为写入字/位线电流的供给/截止时间，幅度和时间变化（电流波形）。写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

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