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1. 发明授权

US09558314B2 Method of designing circuit layout and system for implementing the same 有权
标题翻译：设计电路布局的方法及其实现方法
公开(公告)号：US09558314B2
公开(公告)日：2017-01-31
申请号：US14580846
申请日：2014-12-23
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Te-Yu Liu , Ke-Ying Su , Cheng Hsiao , Chia-Yi Chen , Ke-Wei Su
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F17/5036
摘要： A method of designing a circuit layout includes calculating a typical value representing performance characteristics for the circuit layout based on a graphic database system (GDS) file. The method further includes calculating an adjustment value based on the GDS file and at least one of a CAP corner vector or a RES corner vector, wherein the CAP corner vector is based on an eigenvector of a parasitic capacitance of the circuit layout, and the RES corner vector is based on an eigenvector of a parasitic resistance of the circuit layout. The method further includes calculating a corner value based on the typical value and the adjustment value. The method further includes modifying the GDS file if performance characteristics of the corner value fail to satisfy performance requirements of the circuit layout.
摘要翻译：设计电路布局的方法包括基于图形数据库系统（GDS）文件计算表示电路布局的性能特征的典型值。该方法还包括基于GDS文件和CAP角向量或RES角向量中的至少一个来计算调整值，其中CAP角向量基于电路布局的寄生电容的特征向量，RES 角矢量基于电路布局的寄生电阻的特征向量。该方法还包括基于典型值和调整值计算拐角值。该方法还包括如果拐角值的性能特性不能满足电路布局的性能要求，则修改GDS文件。

2. 发明授权

US10019545B2 Simulation scheme including self heating effect 有权
公开(公告)号：US10019545B2
公开(公告)日：2018-07-10
申请号：US14304499
申请日：2014-06-13
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Min-Chie Jeng , Chung-Kai Lin , Ke-Wei Su , Yi-Shun Huang , Ya-Chin Liang , Cheng Hsiao , Juan Yi Chen , Wai-Kit Lee
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F17/5068 , G06F2217/80
摘要： A method includes receiving input information related to devices of an integrated circuit. A first simulation of the integrated circuit is performed over a first time period. Average temperature changes of the devices over the first time period are calculated. A second simulation of the integrated circuit is performed over a second time period using the average temperature changes of the devices. The first simulation and the second simulation are executed by a processor unit.

3. 发明申请

US20150363526A1 Simulation Scheme Including Self Heating Effect 有权
标题翻译：包括自热效应的模拟方案
公开(公告)号：US20150363526A1
公开(公告)日：2015-12-17
申请号：US14304499
申请日：2014-06-13
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Min-Chie Jeng , Chung-Kai Lin , Ke-Wei Su , Yi-Shun Huang , Ya-Chin Liang , Cheng Hsiao , Juan Yi Chen , Wai-Kit Lee
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F17/5068 , G06F2217/80
摘要： A method includes receiving input information related to devices of an integrated circuit. A first simulation of the integrated circuit is performed over a first time period. Average temperature changes of the devices over the first time period are calculated. A second simulation of the integrated circuit is performed over a second time period using the average temperature changes of the devices. The first simulation and the second simulation are executed by a processor unit.
摘要翻译：一种方法包括接收与集成电路的装置相关的输入信息。在第一时间段内执行集成电路的第一模拟。计算设备在第一时间段内的平均温度变化。使用器件的平均温度变化在第二时间段内执行集成电路的第二仿真。第一模拟和第二模拟由处理器单元执行。

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