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1. 发明授权

US08084365B2 Method of manufacturing a nano structure by etching, using a substrate containing silicon 有权
标题翻译：通过蚀刻制造纳米结构体的方法，使用含硅的衬底
公开(公告)号：US08084365B2
公开(公告)日：2011-12-27
申请号：US12880188
申请日：2010-09-13
申请人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
发明人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
IPC分类号： H01L21/308
CPC分类号： B82Y10/00 , H01L21/3083 , H01L21/31144
摘要： A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width.
摘要翻译：使用含有Si的基板通过蚀刻制造纳米结构体的方法。将聚焦的Ga离子或In离子束照射在含有Si的衬底的表面上。注入Ga离子或In离子，同时溅射衬底的表面，使得在衬底的表面上形成含有Ga或In的层。使用含有氟（F）的气体进行干蚀刻，其中包含形成在基板表面上的Ga或In的层作为蚀刻掩模，并且纳米结构形成为具有至少2μm锡的图案根据预定线宽度的深度。

2. 发明授权

US07902637B2 Nano structure and method of manufacturing nano structure 有权
标题翻译：纳米结构和制造纳米结构的方法
公开(公告)号：US07902637B2
公开(公告)日：2011-03-08
申请号：US12109701
申请日：2008-04-25
申请人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
发明人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
IPC分类号： H01L29/06 , H01L21/302
CPC分类号： B82Y10/00 , H01L21/3083 , H01L21/31144
摘要： A nano structure formed on the surface of a substrate containing Si and having a pattern of at least 2 μm in depth, in which Ga or In is contained in the surface of the pattern, and the Ga or the In has a concentration distribution that an elemental composition ratio Ga/Si or In/Si of Si and Ga or In detected by an X-ray photoelectron spectroscopy is at least 0.4 atomic percent in the depth direction of the substrate, and the maximum value of the concentration is positioned within 50 nm of the surface of the pattern.
摘要翻译：纳米结构形成在含有Si的衬底的表面上，其深度为至少2μm的图案，其中Ga或In包含在图案的表面中，Ga或In的浓度分布为通过X射线光电子能谱检测的Si和Ga或In的元素组成比Ga / Si或In / Si在衬底的深度方向上至少为0.4原子％，并且浓度的最大值位于50nm内的图案表面。

3. 发明申请

US20110027998A1 Method of Manufacturing A Nano Structure By Etching, Using A Substrate Containing Silicon 有权
标题翻译：通过蚀刻制造纳米结构的方法，使用含有硅的衬底
公开(公告)号：US20110027998A1
公开(公告)日：2011-02-03
申请号：US12880188
申请日：2010-09-13
申请人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
发明人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
IPC分类号： H01L21/308
CPC分类号： B82Y10/00 , H01L21/3083 , H01L21/31144
摘要： A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width.
摘要翻译：使用含有Si的基板通过蚀刻制造纳米结构体的方法。将聚焦的Ga离子或In离子束照射在含有Si的衬底的表面上。注入Ga离子或In离子，同时溅射衬底的表面，使得在衬底的表面上形成含有Ga或In的层。使用含有氟（F）的气体进行干蚀刻，其中包含形成在基板表面上的Ga或In的层作为蚀刻掩模，并且纳米结构形成为具有至少2μm锡的图案根据预定线宽度的深度。

4. 发明申请

US20090315153A1 NANO STRUCTURE AND MANUFACTURING METHOD OF NANO STRUCTURE 有权
标题翻译：纳米结构的纳米结构与制造方法
公开(公告)号：US20090315153A1
公开(公告)日：2009-12-24
申请号：US12109701
申请日：2008-04-25
申请人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
发明人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
IPC分类号： H01L29/06 , H01L21/302
CPC分类号： B82Y10/00 , H01L21/3083 , H01L21/31144
摘要： To provide a method of manufacturing a nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si and a nano structure having a pattern of a high aspect and nano order. A nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si, wherein the nano structure is configured to contain Ga or In on the surface of the pattern, and has the maximum value of the concentration of the Ga or the In positioned within 50 nm of the surface of the pattern in the depth direction of the substrate. Further, its manufacturing method is configured such that the surface of the substrate containing Si is irradiated with a focused Ga ion or In ion beam, and the Ga ions or the In ions are injected, while sputtering away the surface of the substrate, and a layer containing Ga or In is formed on the surface of the substrate, and with this layer taken as an etching mask, a dry etching is performed.
摘要翻译：本发明提供一种制造具有深度形成在2μm以上的图案的纳米结构体的方法，该方法形成在含有Si的衬底和具有高方面和纳米级的图案的纳米结构的表面上。在包含Si的基板的表面上形成深度为2μm或更大的图案的纳米结构，其中纳米结构被配置为在图案的表面上含有Ga或In，并且具有 Ga或In位于衬底的深度方向上图案表面的50nm以内。此外，其制造方法被配置为使得包含Si的衬底的表面被照射聚焦的Ga离子或In离子束，并且注入Ga离子或In离子，同时溅射离开衬底的表面，并且在基板的表面上形成含有Ga或In的层，将该层作为蚀刻掩模进行干法蚀刻。

5. 发明授权

US08337712B2 Method for forming etching mask, method for fabricating three-dimensional structure and method for fabricating three-dimensional photonic crystalline laser device 有权
标题翻译：用于形成蚀刻掩模的方法，用于制造三维结构的方法和用于制造三维光子晶体激光器件的方法
公开(公告)号：US08337712B2
公开(公告)日：2012-12-25
申请号：US12120461
申请日：2008-05-14
申请人： Kenji Tamamori , Masahiko Okunuki , Shinan Wang , Taiko Motoi , Haruhito Ono , Toshiaki Aiba
发明人： Kenji Tamamori , Masahiko Okunuki , Shinan Wang , Taiko Motoi , Haruhito Ono , Toshiaki Aiba
IPC分类号： B29D11/00 , B44C1/22
CPC分类号： B29D11/00 , G02B2006/1213 , G03F7/2065 , H01S5/105 , H01S5/2081
摘要： A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.
摘要翻译：形成蚀刻掩模的方法包括将聚焦的离子束照射到衬底的表面上，并且在照射区域中形成用于包括含离子的部分的倾斜蚀刻的蚀刻掩模。制造三维结构的方法包括：准备衬底，将聚焦的离子束照射到衬底的表面上，并在照射区域中形成包括含离子的部分的蚀刻掩模，并从对角线对衬底进行干蚀刻方向，并形成多个孔。

6. 发明授权

US07700390B2 Method for fabricating three-dimensional photonic crystal 失效
标题翻译：制造三维光子晶体的方法
公开(公告)号：US07700390B2
公开(公告)日：2010-04-20
申请号：US12119168
申请日：2008-05-12
申请人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
发明人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
IPC分类号： H01L21/00 , H01L21/04 , H01L21/425
CPC分类号： G02B6/10 , B82Y20/00 , G02B1/005 , G02B6/1225
摘要： A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.
摘要翻译：一种制造三维光子晶体的方法包括以下步骤：形成电介质薄膜; 通过使用聚焦离子束将离子选择性地注入到电介质薄膜中以在电介质薄膜上形成掩模; 通过选择性地去除在电介质薄膜上没有形成掩模的电介质薄膜的暴露部分来形成图案; 在其上形成图案的电介质薄膜上形成牺牲层; 并且平坦化形成在电介质薄膜上的牺牲层，直到图案到达表面。

7. 发明申请

US20080298744A1 PHOTONIC CRYSTAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：光子晶体结构及其制造方法
公开(公告)号：US20080298744A1
公开(公告)日：2008-12-04
申请号：US12127154
申请日：2008-05-27
申请人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
发明人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
IPC分类号： G02B6/26
CPC分类号： G02B5/1847 , B82Y20/00 , G02B1/005 , G02B6/1225
摘要： A photonic crystal structure is provided the optical characteristics of which vary periodically in at least one direction, wherein the base material of the photonic crystal structure is formed of a dielectric material, a region containing at least one of molecules, atoms and ions different from the constituent element of the base material is provided in the base material, and the region is arranged in the base material so that the density of one of the molecules, atoms and ions varies periodically in the one direction.
摘要翻译：提供光子晶体结构，其光学特性在至少一个方向上周期性地变化，其中光子晶体结构的基底材料由介电材料形成，包含至少一个分子，不同于基材的构成元件设置在基材中，并且该区域被布置在基材中，使得一个分子，原子和离子的密度在一个方向上周期性地变化。

8. 发明申请

US20080283487A1 PROCESS FOR PRODUCING THREE-DIMENSIONAL PHOTONIC CRYSTAL AND THE THREE-DIMENSIONAL PHOTONIC CRYSTAL 审中-公开
标题翻译：生产三维光子晶体和三维光子晶体的方法
公开(公告)号：US20080283487A1
公开(公告)日：2008-11-20
申请号：US12108991
申请日：2008-04-24
申请人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
发明人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
IPC分类号： B32B3/30 , C23F1/00
CPC分类号： G02B6/1225 , B82Y20/00 , G02B1/005 , Y10T428/2457
摘要： A process for producing a three-dimensional photonic crystal comprises the steps of providing a base material having first and second faces adjoining together at a first angle; forming a first mask on the first face; forming fine holes in the base material by dry-etching on the first face in a direction at a second angle to the first face; forming a second mask on the second face; and forming fine holes in the base material by dry-etching on the second face in a direction at a third angle to the second face; the first mask and the second mask, being formed by implantation of ions by a focused ion beam onto the surface layer of the mask formation face of the base material.
摘要翻译：制造三维光子晶体的方法包括以下步骤：提供具有以第一角度邻接在一起的第一和第二面的基材; 在第一面上形成第一面罩; 通过在第一面上以与第一面成第二角度的方向干蚀刻在基材中形成细孔; 在所述第二面上形成第二掩模; 并且在第二面上通过干法蚀刻在与第二面成三角的方向上在基材中形成细孔; 第一掩模和第二掩模，通过聚焦离子束将离子注入到基材的掩模形成面的表面层上而形成。

9. 发明申请

US20080286892A1 METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTAL 失效
标题翻译：制备三维光子晶体的方法
公开(公告)号：US20080286892A1
公开(公告)日：2008-11-20
申请号：US12119168
申请日：2008-05-12
申请人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
发明人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
IPC分类号： H01L21/00 , G02B6/10
CPC分类号： G02B6/10 , B82Y20/00 , G02B1/005 , G02B6/1225
摘要： A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.
摘要翻译：一种制造三维光子晶体的方法包括以下步骤：形成电介质薄膜; 通过使用聚焦离子束将离子选择性地注入到电介质薄膜中以在电介质薄膜上形成掩模; 通过选择性地去除在电介质薄膜上没有形成掩模的电介质薄膜的暴露部分来形成图案; 在其上形成图案的电介质薄膜上形成牺牲层; 并且平坦化形成在电介质薄膜上的牺牲层，直到图案到达表面。

10. 发明申请

US20080283493A1 METHOD FOR FORMING ETCHING MASK, METHOD FOR FABRICATING THREE-DIMENSIONAL STRUCTURE AND METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTALLINE LASER DEVICE 有权
标题翻译：形成蚀刻掩模的方法，制备三维结构的方法和制备三维光子晶体激光器件的方法
公开(公告)号：US20080283493A1
公开(公告)日：2008-11-20
申请号：US12120461
申请日：2008-05-14
申请人： Kenji Tamamori , Masahiko Okunuki , Shinan Wang , Taiko Motoi , Haruhito Ono , Toshiaki Aiba
发明人： Kenji Tamamori , Masahiko Okunuki , Shinan Wang , Taiko Motoi , Haruhito Ono , Toshiaki Aiba
IPC分类号： B29D11/00 , B44C1/22
CPC分类号： B29D11/00 , G02B2006/1213 , G03F7/2065 , H01S5/105 , H01S5/2081
摘要： A method for forming an etching mask comprises the steps of: irradiating focus ion beam to a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises the steps of: preparing a substrate; irradiating focus ion beam to a surface of the substrate and forming an etching mask including an ion containing portion in the irradiated region; and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.
摘要翻译：一种用于形成蚀刻掩模的方法，包括以下步骤：将聚焦离子束照射到衬底表面，并形成用于在照射区域中包括含离子的部分的倾斜蚀刻的蚀刻掩模。制造三维结构的方法包括以下步骤：制备基底; 将光离子束照射到所述基板的表面，并在所述照射区域中形成包括含离子的部分的蚀刻掩模; 并且使用蚀刻掩模从对角线方向对基板进行干蚀刻并形成多个孔。

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