专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5321632A Method and apparatus for measuring the length of a transmission line in accordance with a reflected waveform 失效
标题翻译：根据反射波形测量传输线的长度的方法和装置
公开(公告)号：US5321632A
公开(公告)日：1994-06-14
申请号：US840118
申请日：1992-02-24
申请人： Taiichi Otsuji , Toshiyuki Shimizu
发明人： Taiichi Otsuji , Toshiyuki Shimizu
IPC分类号： G01B7/02 , G01R31/02 , G01R31/11 , G01R31/319
CPC分类号： G01R31/3191 , G01B7/02 , G01R31/11 , G01R31/31924
摘要： By measuring the waveform of the reflected wave obtained by transmitting a pulse to an open-ended transmission line, a transfer function of the transmission line with respect to the incident wave is computed as a result of the measurement. Then, the waveform of the output wave at the output end or the open end of the transmission line is estimated in response to an individual input signal by using the transfer function computed. The transmission delay time of the transmission line is obtained by computing the time difference between the transient timing of the estimated waveform of the output wave and the transient timing of the waveform of the input signal.
摘要翻译：通过测量通过向开路传输线发送脉冲而获得的反射波的波形，作为测量的结果计算传输线相对于入射波的传递函数。然后，通过使用计算的传递函数，响应于各个输入信号来估计传输线的输出端或开路端的输出波的波形。通过计算输出波的估计波形的瞬态定时与输入信号的波形的瞬态定时之间的时间差来获得传输线的传输延迟时间。

2. 发明授权

US07915641B2 Terahertz electromagnetic wave radiation element and its manufacturing method 有权
标题翻译：太赫兹电磁波辐射元件及其制造方法
公开(公告)号：US07915641B2
公开(公告)日：2011-03-29
申请号：US11575102
申请日：2005-08-23
申请人： Taiichi Otsuji , Eiichi Sano
发明人： Taiichi Otsuji , Eiichi Sano
IPC分类号： H01L33/00 , H01L31/00 , H01L21/00
CPC分类号： H01S1/02 , G02F1/3534 , G02F2203/13 , H01L31/0224 , H01L31/02327 , H01L31/09 , H01S2302/02
摘要： The present invention improves the efficiency of conversion from a non-radiation two-dimensional electron plasmon wave into a radiation electromagnetic wave, and realizes a wide-band characteristic. A terahertz electromagnetic wave radiation element of the present invention comprises a semiinsulating semiconductor bulk layer, a two-dimensional electron layer formed directly above the semiconductor bulk layer by a semiconductor heterojunction structure, source and drain electrodes electrically connected to two opposed sides of the two-dimensional electron layer, a double gate electrode grating which is provided in the vicinity of and parallel to the upper surface of the two-dimensional electron layer and for which two different dc bias potentials can be alternately set, and a transparent metal mirror provided in contact with the lower surface of the semiconductor bulk layer, formed into a film shape, functioning as a reflecting mirror in the terahertz band, and being transparent in the light wave band. Two light waves are caused to enter from the lower surface of the transparent metal mirror, and two different dc bias potentials are alternately applied to the double gate electrode grating so as to periodically modulate the electron density of the two-dimensional electron layer in accordance with the configuration of the double gate electrode grating.
摘要翻译：本发明提高了从非辐射二维电子等离子体波转换成辐射电磁波的效率，实现了宽带特性。本发明的太赫兹电磁波辐射元件包括半绝缘半导体本体层，通过半导体异质结结构直接形成在半导体本体层上方的二维电子层，电连接到二极管的两相对侧的源极和漏极，三维电子层，设置在二维电子层的上表面附近并与二维电子层的上表面平行并且可以交替设置两个不同的直流偏置电位的双栅电极光栅，以及设置成接触的透明金属镜半导体本体层的下表面形成为薄膜形状，在太赫兹带中用作反射镜，并且在光波段中是透明的。使两个光波从透明金属镜的下表面进入，并且将两个不同的直流偏置电位交替地施加到双栅电极光栅，以便根据二维电极层的周期性调制二维电子层的电子密度双栅电极光栅的结构。

3. 发明申请

US20080315216A1 Terahertz Electromagnetic Wave Radiation Element and Its Manufacturing Method 有权
标题翻译：太赫兹电磁波辐射元件及其制造方法
公开(公告)号：US20080315216A1
公开(公告)日：2008-12-25
申请号：US11575102
申请日：2005-08-23
申请人： Taiichi Otsuji , Eiichi Sano
发明人： Taiichi Otsuji , Eiichi Sano
IPC分类号： H01L33/00 , H01L31/00 , H01L21/00
CPC分类号： H01S1/02 , G02F1/3534 , G02F2203/13 , H01L31/0224 , H01L31/02327 , H01L31/09 , H01S2302/02
摘要： The present invention improves the efficiency of conversion from a non-radiation two-dimensional electron plasmon wave into a radiation electromagnetic wave, and realizes a wide-band characteristic. A terahertz electromagnetic wave radiation element of the present invention comprises a semiinsulating semiconductor bulk layer, a two-dimensional electron layer formed directly above the semiconductor bulk layer by a semiconductor heterojunction structure, source and drain electrodes electrically connected to two opposed sides of the two-dimensional electron layer, a double gate electrode grating which is provided in the vicinity of and parallel to the upper surface of the two-dimensional electron layer and for which two different dc bias potentials can be alternately set, and a transparent metal mirror provided in contact with the lower surface of the semiconductor bulk layer, formed into a film shape, functioning as a reflecting mirror in the terahertz band, and being transparent in the light wave band. Two light waves are caused to enter from the lower surface of the transparent metal mirror, and two different dc bias potentials are alternately applied to the double gate electrode grating so as to periodically modulate the electron density of the two-dimensional electron layer in accordance with the configuration of the double gate electrode grating.
摘要翻译：本发明提高了从非辐射二维电子等离子体波转换成辐射电磁波的效率，实现了宽带特性。本发明的太赫兹电磁波辐射元件包括半绝缘半导体本体层，通过半导体异质结结构直接形成在半导体本体层上方的二维电子层，电连接到二极管的两相对侧的源极和漏极，三维电子层，设置在二维电子层的上表面附近并与二维电子层的上表面平行并且可以交替设置两个不同的直流偏置电位的双栅电极光栅，以及设置成接触的透明金属镜半导体本体层的下表面形成为薄膜形状，在太赫兹带中用作反射镜，并且在光波段中是透明的。使两个光波从透明金属镜的下表面进入，并且将两个不同的直流偏置电位交替地施加到双栅电极光栅，以便根据二维电极层的周期性调制二维电子层的电子密度双栅电极光栅的结构。

4. 发明授权

US08227794B2 Complementary logic gate device 有权
标题翻译：互补逻辑门装置
公开(公告)号：US08227794B2
公开(公告)日：2012-07-24
申请号：US13054706
申请日：2009-07-24
申请人： Taiichi Otsuji , Eiichi Sano
发明人： Taiichi Otsuji , Eiichi Sano
IPC分类号： H01L29/08
CPC分类号： H01L21/8213 , H01L27/092 , H01L27/11807 , H01L27/1203 , H01L29/78684 , Y10S977/734
摘要： Provided is a complementary logical gate device represented by a silicon CMOS logical circuit among semiconductor integrated logical circuits which can effectively solve the problem of the speed performance limit of an ultra-large scale integration and an ultra-low power consumption type logical circuit. The complementary logical gate includes an electron running layer formed by grapheme without using an n-channel FET or a p-channel FET, has the ambipolar characteristic, and uses only two FET having different threshold values, i.e., a first FET and a second FET. The first FET has a gate electrode short-circuited to a gate electrode of the second FET so as to constitute an input terminal. The first FET has a source electrode set to a low potential. The first FET has a drain electrode connected to a source electrode of the second FET so as to constitute an output terminal. The second FET has a drain electrode set to a high potential.
摘要翻译：提供了可以有效地解决超大规模集成的速度性能限制和超低功耗型逻辑电路的问题的半导体集成逻辑电路中由硅CMOS逻辑电路表示的互补逻辑门装置。互补逻辑门包括由不使用n沟道FET或p沟道FET的图形形成的电子运行层，具有双极特性，并且仅使用具有不同阈值的两个FET，即第一FET和第二FET 。第一FET具有与第二FET的栅极短路的栅电极，以构成输入端。第一FET具有设置为低电位的源电极。第一FET具有连接到第二FET的源极的漏极，以构成输出端。第二FET具有设置为高电位的漏电极。

5. 发明申请

US20110156007A1 COMPLEMENTARY LOGIC GATE DEVICE 有权
标题翻译：补充逻辑门控器件
公开(公告)号：US20110156007A1
公开(公告)日：2011-06-30
申请号：US13054706
申请日：2009-07-24
申请人： Taiichi Otsuji , Eiichi Sano
发明人： Taiichi Otsuji , Eiichi Sano
IPC分类号： H01L29/08 , B82Y99/00
CPC分类号： H01L21/8213 , H01L27/092 , H01L27/11807 , H01L27/1203 , H01L29/78684 , Y10S977/734
摘要： Provided is a complementary logical gate device represented by a silicon CMOS logical circuit among semiconductor integrated logical circuits which can effectively solve the problem of the speed performance limit of an ultra-large scale integration and an ultra-low power consumption type logical circuit. The complementary logical gate includes an electron running layer formed by grapheme without using an n-channel FET or a p-channel FET, has the ambipolar characteristic, and uses only two FET having different threshold values, i.e., a first FET and a second FET. The first FET has a gate electrode short-circuited to a gate electrode of the second FET so as to constitute an input terminal. The first FET has a source electrode set to a low potential. The first FET has a drain electrode connected to a source electrode of the second FET so as to constitute an output terminal. The second FET has a drain electrode set to a high potential.
摘要翻译：提供了可以有效地解决超大规模集成的速度性能限制和超低功耗型逻辑电路的问题的半导体集成逻辑电路中由硅CMOS逻辑电路表示的互补逻辑门装置。互补逻辑门包括由不使用n沟道FET或p沟道FET的图形形成的电子运行层，具有双极特性，并且仅使用具有不同阈值的两个FET，即第一FET和第二FET 。第一FET具有与第二FET的栅极短路的栅电极，以构成输入端。第一FET具有设置为低电位的源电极。第一FET具有连接到第二FET的源极的漏极，以构成输出端。第二FET具有设置为高电位的漏电极。

6. 发明授权

US09018683B2 Terahertz electromagnetic wave conversion device 有权
标题翻译：太赫兹电磁波转换装置
公开(公告)号：US09018683B2
公开(公告)日：2015-04-28
申请号：US13991407
申请日：2010-12-03
申请人： Taiichi Otsuji , Viacheslav Popov , Wojciech Knap , Yahya Moubarak Meziani , Nina Diakonova , Dominique Coquillat , Frederic Teppe , Denis Fateev , Jesus Enrique Velazquez Perez
发明人： Taiichi Otsuji , Viacheslav Popov , Wojciech Knap , Yahya Moubarak Meziani , Nina Diakonova , Dominique Coquillat , Frederic Teppe , Denis Fateev , Jesus Enrique Velazquez Perez
IPC分类号： H01L29/66 , H01L31/02 , H01L29/423 , H01L29/778 , H01L31/113
CPC分类号： H01L31/02 , H01L29/42316 , H01L29/7787 , H01L31/1136
摘要： The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This invention has an HEMT structure having a substrate, an electron transit layer, an electron supply layer, a source and a drain, and includes a first and second group of gates. The gate length of each finger of the first group of gates is narrower than the gate length of each finger of the second group of gates, and each finger of each group of gates is disposed between the source and the drain on the same cycle. A first and second distance from each finger of the first group of gates to two fingers of the second group of gates adjacent to each finger are unequal lengths.
摘要翻译：本发明的目的是通过具有场效应晶体管结构的太赫兹电磁波转换装置中的等离子体波，提高太赫兹电磁波能量与直流能量之间的转换效率。本发明具有HEMT结构，其具有基板，电子转移层，电子供给层，源极和漏极，并且包括第一和第二组栅极。第一组门的每个手指的栅极长度比第二组栅极的每个手指的栅极长度窄，并且每组栅极的每个指状物在同一周期上设置在源极和漏极之间。从第一组门的每个手指到与每个手指相邻的第二组门的两个手指的第一和第二距离是不相等的长度。

7. 发明申请

US20130277716A1 TERAHERTZ ELECTROMAGNETIC WAVE CONVERSION DEVICE 有权
标题翻译： TERAHERTZ电磁波转换装置
公开(公告)号：US20130277716A1
公开(公告)日：2013-10-24
申请号：US13991407
申请日：2010-12-03
申请人： Taiichi Otsuji , Viacheslav Popov , Wojciech Knap , Yahya Moubarak Meziani , Nina Diakonova , Dominique Coquillat , Frederic Teppe , Denis Fateev , Jesus Enrique Velazquez Perez
发明人： Taiichi Otsuji , Viacheslav Popov , Wojciech Knap , Yahya Moubarak Meziani , Nina Diakonova , Dominique Coquillat , Frederic Teppe , Denis Fateev , Jesus Enrique Velazquez Perez
IPC分类号： H01L31/02
CPC分类号： H01L31/02 , H01L29/42316 , H01L29/7787 , H01L31/1136
摘要： The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This invention has an HEMT structure having a substrate, an electron transit layer, an electron supply layer, a source and a drain, and includes a first and second group of gates. The gate length of each finger of the first group of gates is narrower than the gate length of each finger of the second group of gates, and each finger of each group of gates is disposed between the source and the drain on the same cycle. A first and second distance from each finger of the first group of gates to two fingers of the second group of gates adjacent to each finger are unequal lengths.
摘要翻译：本发明的目的是通过具有场效应晶体管结构的太赫兹电磁波转换装置中的等离子体波，提高太赫兹电磁波能量与直流能量之间的转换效率。本发明具有HEMT结构，其具有基板，电子转移层，电子供给层，源极和漏极，并且包括第一和第二组栅极。第一组门的每个手指的栅极长度比第二组栅极的每个手指的栅极长度窄，并且每组栅极的每个指状物在相同周期上设置在源极和漏极之间。从第一组门的每个手指到与每个手指相邻的第二组门的两个手指的第一和第二距离是不相等的长度。

8. 发明申请

US20120049160A1 FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管
公开(公告)号：US20120049160A1
公开(公告)日：2012-03-01
申请号：US13262066
申请日：2010-04-01
申请人： Eiichi Sano , Taiichi Otsuji
发明人： Eiichi Sano , Taiichi Otsuji
IPC分类号： H01L29/08 , H01L29/12 , B82Y99/00
CPC分类号： H01L21/823807 , H01L21/02527 , H01L21/02573 , H01L21/02612 , H01L21/8213 , H01L29/1606 , H01L29/165 , H01L29/66431 , H01L29/7781 , H01L29/78618 , H01L29/78684
摘要： The disclosed field-effect transistor has a graphene channel, and does not exhibit ambipolar properties. Specifically, the field-effect transistor has a semi-conducting substrate; a channel including a graphene layer disposed on the aforementioned semiconductor substrate; a source electrode and drain electrode comprising a metal; and a gate electrode. The aforementioned channel and the aforementioned source and drain electrodes comprising a metal are connected via a semiconductor layer.
摘要翻译：所公开的场效应晶体管具有石墨烯通道，并且不具有双极性。具体地说，场效应晶体管具有半导体衬底; 包括设置在所述半导体衬底上的石墨烯层的沟道; 源电极和包含金属的漏电极; 和栅电极。上述通道和上述包含金属的源电极和漏电极经由半导体层连接。

9. 发明授权

US4928278A IC test system 失效
标题翻译： IC测试系统
公开(公告)号：US4928278A
公开(公告)日：1990-05-22
申请号：US229780
申请日：1988-08-05
申请人： Taiichi Otsuji , Naoaki Narumi
发明人： Taiichi Otsuji , Naoaki Narumi
IPC分类号： G01R31/319
CPC分类号： G01R31/3191 , G01R31/31922
摘要： Calibration of timing errors of each pin electronics unit is carried out by a main controller and a plurality of controllers, each assigned to each pin electronics unit or to each block including a plurality of pin electronics units. A reference timing signal is simultaneously distributed to each pin electronics unit or block, so that the timing error calibration is executed in parallel among the pin electronics units or the blocks.
摘要翻译：每个引脚电子单元的定时误差的校准由主控制器和多个控制器执行，每个控制器分配给每个引脚电子单元或包括多个引脚电子单元的每个块。参考定时信号同时分配给每个引脚电子单元或块，使得定时误差校准在引脚电子单元或块之间并行执行。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式