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1. 发明授权

US08395176B2 Top-emitting nitride-based light-emitting device with ohmic characteristics and luminous efficiency 有权
标题翻译：发光氮化物基发光器件具有欧姆特性和发光效率
公开(公告)号：US08395176B2
公开(公告)日：2013-03-12
申请号：US11076249
申请日：2005-03-10
申请人： Tae-yeong Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem , Jung-inn Sohn
发明人： Tae-yeong Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem , Jung-inn Sohn
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/387 , H01L2933/0016
摘要： A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.
摘要翻译：顶部发光氮化物系发光器件及其制造方法。具有依次形成的基板，n包层，有源层和p型包覆层的顶部发射氮化物系发光器件包括：网格单元层，其通过栅格阵列形成在p包层上由宽度小于30微米的导电材料形成的分离的电池，以改善电气和光学特性; 表面保护层，其形成在所述p包覆层上并且覆盖所述电池之间的至少区域以保护所述p型覆层的表面; 以及使用透明导电材料形成在表面保护层和栅极电池层上的透明导电层。发光器件及其制造方法提供了对p型覆层的改善的欧姆接触，优异的I-V特性和高透光率，从而提高了器件的发光效率。

2. 发明授权

US07485897B2 Nitride-based light-emitting device having grid cell layer 有权
标题翻译：具有栅电池层的氮化物系发光元件
公开(公告)号：US07485897B2
公开(公告)日：2009-02-03
申请号：US11077536
申请日：2005-03-11
申请人： Tae-yeong Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeong Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42 , H01L2933/0016 , H01S5/3211 , H01S5/32341
摘要： A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.
摘要翻译：氮化物系发光元件及其制造方法。发光装置包括基板，以及顺序地形成在基板上的n包层，有源层，p包覆层，网格单元层和欧姆接触层。格栅单元层具有隔离的导电粒子型电池，其尺寸小于30微米，埋入欧姆接触层中。氮化物系发光器件及其制造方法提高了p型覆层的欧姆接触特性，从而提高了器件的发光效率和寿命，同时通过省略晶片上的激活工艺简化了制造工艺成长。

3. 发明授权

US07180094B2 Nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US07180094B2
公开(公告)日：2007-02-20
申请号：US10957704
申请日：2004-10-05
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L29/04
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
摘要翻译：提供一种氮化物系发光器件及其制造方法。氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

4. 发明授权

US07485479B2 Nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US07485479B2
公开(公告)日：2009-02-03
申请号：US11649236
申请日：2007-01-04
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
摘要翻译：提供一种氮化物系发光器件及其制造方法。氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

5. 发明申请

US20070111354A1 Nitride-based light emitting device and method of manufacturing the same 有权
公开(公告)号：US20070111354A1
公开(公告)日：2007-05-17
申请号：US11649236
申请日：2007-01-04
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

6. 发明申请

US20050199888A1 Top-emitting nitride-based light-emitting device and method of manufacturing the same 有权
标题翻译：顶部发光氮化物系发光元件及其制造方法
公开(公告)号：US20050199888A1
公开(公告)日：2005-09-15
申请号：US11076249
申请日：2005-03-10
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem , Jung-inn Sohn
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem , Jung-inn Sohn
IPC分类号： H01L21/00 , H01L27/15 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/42 , H05B33/26
CPC分类号： H01L33/42 , H01L33/387 , H01L2933/0016
摘要： A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.
摘要翻译：顶部发光氮化物系发光器件及其制造方法。具有依次形成的基板，n包层，有源层和p型包覆层的顶部发射氮化物系发光器件包括：栅格单元层，其通过栅格阵列形成在p包层上由宽度小于30微米的导电材料形成的分离的电池，以改善电气和光学特性; 表面保护层，其形成在所述p包覆层上并且覆盖所述电池之间的至少区域以保护所述p型覆层的表面; 以及使用透明导电材料形成在表面保护层和栅极电池层上的透明导电层。发光器件及其制造方法提供了对p型覆层的改善的欧姆接触，优异的I-V特性和高透光率，从而提高了器件的发光效率。

7. 发明申请

US20090124030A1 Nitride-Based Light-Emitting Device and Method of Manufacturing the Same 审中-公开
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US20090124030A1
公开(公告)日：2009-05-14
申请号：US12275484
申请日：2008-11-21
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42 , H01L2933/0016 , H01S5/3211 , H01S5/32341
摘要： A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.
摘要翻译：氮化物系发光元件及其制造方法。发光装置包括基板，以及顺序地形成在基板上的n包层，有源层，p包覆层，网格单元层和欧姆接触层。格栅单元层具有隔离的导电粒子型电池，其尺寸小于30微米，埋入欧姆接触层中。氮化物系发光器件及其制造方法提高了p型覆层的欧姆接触特性，从而提高了器件的发光效率和寿命，同时通过省略晶片上的激活工艺简化了制造工艺成长。

8. 发明申请

US20050077537A1 Nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US20050077537A1
公开(公告)日：2005-04-14
申请号：US10957704
申请日：2004-10-05
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L33/06 , H01L33/10 , H01L33/32 , H01L33/42 , H01L21/00 , H01L33/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
摘要翻译：提供一种氮化物系发光器件及其制造方法。氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

9. 发明申请

US20050199895A1 Nitride-based light-emitting device and method of manufacturing the same 有权
标题翻译：氮化物系发光元件及其制造方法
公开(公告)号：US20050199895A1
公开(公告)日：2005-09-15
申请号：US11077536
申请日：2005-03-11
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L21/28 , H01L27/15 , H01L29/22 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/42 , H01S5/323
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42 , H01L2933/0016 , H01S5/3211 , H01S5/32341
摘要： A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.
摘要翻译：氮化物系发光元件及其制造方法。发光装置包括基板，以及顺序地形成在基板上的n包层，有源层，p包覆层，网格单元层和欧姆接触层。格栅单元层具有隔离的导电粒子型电池，其尺寸小于30微米，埋入欧姆接触层中。氮化物系发光器件及其制造方法提高了p型覆层的欧姆接触特性，从而提高了器件的发光效率和寿命，同时通过省略晶片上的激活工艺简化了制造工艺成长。

10. 发明授权

US07989244B2 Method of manufacturing nitride-based semiconductor light-emitting device 失效
标题翻译：制造氮化物系半导体发光元件的方法
公开(公告)号：US07989244B2
公开(公告)日：2011-08-02
申请号：US11802482
申请日：2007-05-23
申请人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
发明人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02472 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01S5/0213 , H01S5/0217
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.
摘要翻译：提供了一种制造具有提高的效率和增加的输出特性的氮化物基半导体发光器件的方法。该方法可以包括在衬底上形成具有湿蚀刻性质的牺牲层，在牺牲层上形成保护层，在用于晶体生长的反应气体气氛中保护牺牲层，并且促进要形成的半导体层的外延生长在保护层上，在保护层上形成包括n型半导体层，有源层和p型半导体层的半导体器件，并且通过湿式蚀刻牺牲层从半导体器件去除衬底。

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