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1. 发明授权

US08809895B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08809895B2
公开(公告)日：2014-08-19
申请号：US13175549
申请日：2011-07-01
申请人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song , Ji hyung Moon , Se Yeon Jung , Tae-Yeon Seong
发明人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song , Ji hyung Moon , Se Yeon Jung , Tae-Yeon Seong
IPC分类号： H01L33/14 , H01L33/46 , H01L33/64
CPC分类号： H01L33/14 , H01L33/16 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Provided are a light emitting device and a method of fabricating the same. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being formed of a semiconductor material. Also, the light emitting device further includes a current spreading layer comprising a plurality of carbon nanotube bundles physically connected to each other on one of the first and second conductive type semiconductor layers.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，有源层由半导体材料形成。此外，发光器件还包括电流扩展层，其包括在第一和第二导电类型半导体层中的一个上彼此物理连接的多个碳纳米管束。

2. 发明申请

US20080303055A1 Group-III Nitride-Based Light Emitting Device 有权
标题翻译：基于III族氮化物的发光器件
公开(公告)号：US20080303055A1
公开(公告)日：2008-12-11
申请号：US12159084
申请日：2006-10-27
申请人： Tae-Yeon Seong
发明人： Tae-Yeon Seong
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： Disclosed is a group-III nitride-based light emitting diode. The group-III nitride-based light emitting diode includes a substrate, an n-type nitride-based cladding layer formed on the substrate, a nitride-based active layer formed on the n-type nitride-based cladding layer, a p-type nitride-based cladding layer formed on the nitride-based active layer, and a p-type multi-layered ohmic contact layer formed on the p-type nitride-based cladding layer and including thermally decomposed nitride. The thermally decomposed nitride is obtained by combining nitrogen (N) with at least one metal component selected from the group consisting of nickel (Ni), copper (Cu), zinc (Zn), indium (In) and tin (Sn). An ohmic contact characteristic is enhanced at the interfacial surface of the p-type nitride-based cladding layer of the group-III nitride-based light emitting device, thereby improving the current-voltage characteristics. In addition, since the light transmittance of the transparent electrode is improved, light efficiency and brightness of the group-III nitride-based light emitting device are also improved.
摘要翻译：公开了III族氮化物系发光二极管。 III族氮化物系发光二极管包括基板，形成在基板上的n型氮化物基覆层，形成在n型氮化物基覆层上的氮化物基活性层，p型形成在氮化物系活性层上的氮化物系覆层，以及在p型氮化物系被膜层上形成的包含热分解氮化物的p型多层欧姆接触层。通过将氮（N）与选自镍（Ni），铜（Cu），锌（Zn），铟（In）和锡（Sn）中的至少一种金属成分组合而获得的热分解氮化物。在III族氮化物系发光器件的p型氮化物基覆层的界面处增强了欧姆接触特性，从而提高了电流 - 电压特性。此外，由于透明电极的透光率提高，所以III族氮化物系发光元件的光效和亮度也得到改善。

3. 发明授权

US08525215B2 Light emitting device, method of manufacturing the same, light emitting device package, and lighting system 有权
标题翻译：发光器件，其制造方法，发光器件封装和照明系统
公开(公告)号：US08525215B2
公开(公告)日：2013-09-03
申请号：US13175424
申请日：2011-07-01
申请人： Kwang Ki Choi , Hwan Hee Jeong , Ji hyung Moon , Sang Youl Lee , June O Song , Se Yeon Jung , Tae-Yeon Seong
发明人： Kwang Ki Choi , Hwan Hee Jeong , Ji hyung Moon , Sang Youl Lee , June O Song , Se Yeon Jung , Tae-Yeon Seong
IPC分类号： H01L33/42
CPC分类号： H01L33/22 , H01L33/14 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an oxide protrusion disposed on at least a portion of the second conducive semiconductor layer; and a current spreading layer on the second conductive semiconductor layer and the oxide protrusion.
摘要翻译：提供了发光器件，其制造方法，发光器件封装和照明系统。发光器件包括：包括第一导电半导体层，有源层和第二导电半导体层的发光结构层; 设置在所述第二导电半导体层的至少一部分上的氧化物突起; 以及在第二导电半导体层和氧化物突起上的电流扩展层。

4. 发明申请

US20110018027A1 Top-emitting light emitting diodes and methods of manufacturing thereof 有权
公开(公告)号：US20110018027A1
公开(公告)日：2011-01-27
申请号：US12923053
申请日：2010-08-31
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/32
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

5. 发明申请

US20080258133A1 Semiconductor Device and Method of Fabricating the Same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080258133A1
公开(公告)日：2008-10-23
申请号：US12092017
申请日：2006-10-27
申请人： Tae-Yeon Seong
发明人： Tae-Yeon Seong
IPC分类号： H01L31/20 , H01L29/12
CPC分类号： H01L33/04 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/405
摘要： Disclosed is a semiconductor device. The semiconductor device includes a first type nitride-based cladding layer formed on a growth substrate having an insulating property, a multi quantum well nitride-based active layer formed on the first type nitride-based cladding layer and a second type nitride-based cladding layer, which is different from the first type nitride-based cladding layer and is formed on the multi quantum well nitride-based active layer. A tunnel junction layer is formed between the undoped buffering nitride-based layer and the first type nitride-based cladding layer or/and formed on the second type nitride-based cladding layer.
摘要翻译：公开了一种半导体器件。半导体器件包括形成在具有绝缘性的生长衬底上的第一氮化物基覆层，形成在第一氮化物基覆层上的多量子阱氮化物基有源层和第二氮化物基覆层，其与第一氮化物类包覆层不同，并且形成在多量子阱氮化物基活性层上。在未掺杂的缓冲氮化物基层和第一氮化物类覆层之间形成隧道结层，或/形成在第二氮化物基覆层上。

6. 发明申请

US20080224165A1 Top-Emitting Light Emitting Diodes and Methods of Manufacturing Thereof 有权
标题翻译：最大发光二极管及其制造方法
公开(公告)号：US20080224165A1
公开(公告)日：2008-09-18
申请号：US11632183
申请日：2005-07-22
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发射氮化物系发光器件，其包含在p型覆盖层上形成的界面改性层和透明导电薄膜层，由形成在界面改性层上的透明导电材料构成; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线键合效率和产率在包装发光器件时，能够通过低比接触电阻和优异的电流 - 电压特性提高器件的发光效率和使用寿命。

7. 发明申请

US20080121914A1 Flip-Chip Light Emitting Diodes and Method of Manufacturing Thereof 有权
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US20080121914A1
公开(公告)日：2008-05-29
申请号：US11632279
申请日：2005-07-12
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00 , H01L21/329
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：提供了一种倒装芯片氮化物基发光器件，其具有依次层叠在其上的n型覆盖层，有源层和p型覆盖层，包括形成在p型覆盖层上的反射层和至少一个透明导电薄膜层，其由能够抑制构成反射层的材料的扩散的透明导电材料构成，插入在p型覆盖层和反射层之间; 及其制备方法。根据本发明的倒装氮化物基发光器件及其制备方法，提供了与p型覆盖层的欧姆接触特性提高的优点，从而提高引线接合效率，在包装发光器件时的产量，由于低比接触电阻和优异的电流 - 电压特性，能够提高器件的发光效率和寿命。

8. 发明授权

US08487344B2 Optical device and method of fabricating the same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US08487344B2
公开(公告)日：2013-07-16
申请号：US12097359
申请日：2006-12-15
申请人： Tae-Yeon Seong
发明人： Tae-Yeon Seong
IPC分类号： H01L27/00
CPC分类号： H01L33/42 , H01B1/08 , H01L31/022466 , H01L33/32
摘要： Disclosed is an optical device including an optical member and a contact layer stacked on at least one of top and bottom surfaces of the optical member. The contact layer has at least one transparent conducting oxynitride (TCON) layer. The TCON consists of at least one of indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), nickel (Ni), copper (Cu), silver (Ag), gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru), and palladium (Pd).
摘要翻译：公开了一种光学装置，其包括光学构件和层叠在光学构件的顶表面和底表面中的至少一个上的接触层。接触层具有至少一个透明导电氮氧化物（TCON）层。 TCON由铟（In），锡（Sn），锌（Zn），镉（Cd），镓（Ga），铝（Al），镁（Mg），钛（Ti） Mo），镍（Ni），铜（Cu），银（Ag），金（Au），铂（Pt），铑（Rh），铱（Ir），钌（Ru）和钯（Pd）。

9. 发明授权

US08053786B2 Top-emitting light emitting diodes and methods of manufacturing thereof 有权
标题翻译：顶部发光二极管及其制造方法
公开(公告)号：US08053786B2
公开(公告)日：2011-11-08
申请号：US12923053
申请日：2010-08-31
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发光氮化物系发光元件，其特征在于，具有形成在p型覆盖层上的界面改性层和透明导电性由形成在界面改性层上的透明导电材料构成的薄膜层; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线键合效率和产率在包装发光器件时，能够通过低比接触电阻和优异的电流 - 电压特性提高器件的发光效率和使用寿命。

10. 发明申请

US20110086448A1 Flip-chip light emitting diodes and method of manufacturing thereof 有权
公开(公告)号：US20110086448A1
公开(公告)日：2011-04-14
申请号：US12926638
申请日：2010-12-01
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

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