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1. 发明申请

US20080224165A1 Top-Emitting Light Emitting Diodes and Methods of Manufacturing Thereof 有权
标题翻译：最大发光二极管及其制造方法
公开(公告)号：US20080224165A1
公开(公告)日：2008-09-18
申请号：US11632183
申请日：2005-07-22
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发射氮化物系发光器件，其包含在p型覆盖层上形成的界面改性层和透明导电薄膜层，由形成在界面改性层上的透明导电材料构成; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线键合效率和产率在包装发光器件时，能够通过低比接触电阻和优异的电流 - 电压特性提高器件的发光效率和使用寿命。

2. 发明申请

US20080121914A1 Flip-Chip Light Emitting Diodes and Method of Manufacturing Thereof 有权
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US20080121914A1
公开(公告)日：2008-05-29
申请号：US11632279
申请日：2005-07-12
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00 , H01L21/329
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：提供了一种倒装芯片氮化物基发光器件，其具有依次层叠在其上的n型覆盖层，有源层和p型覆盖层，包括形成在p型覆盖层上的反射层和至少一个透明导电薄膜层，其由能够抑制构成反射层的材料的扩散的透明导电材料构成，插入在p型覆盖层和反射层之间; 及其制备方法。根据本发明的倒装氮化物基发光器件及其制备方法，提供了与p型覆盖层的欧姆接触特性提高的优点，从而提高引线接合效率，在包装发光器件时的产量，由于低比接触电阻和优异的电流 - 电压特性，能够提高器件的发光效率和寿命。

3. 发明申请

US20110018027A1 Top-emitting light emitting diodes and methods of manufacturing thereof 有权
公开(公告)号：US20110018027A1
公开(公告)日：2011-01-27
申请号：US12923053
申请日：2010-08-31
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/32
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

4. 发明授权

US08053786B2 Top-emitting light emitting diodes and methods of manufacturing thereof 有权
标题翻译：顶部发光二极管及其制造方法
公开(公告)号：US08053786B2
公开(公告)日：2011-11-08
申请号：US12923053
申请日：2010-08-31
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发光氮化物系发光元件，其特征在于，具有形成在p型覆盖层上的界面改性层和透明导电性由形成在界面改性层上的透明导电材料构成的薄膜层; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线键合效率和产率在包装发光器件时，能够通过低比接触电阻和优异的电流 - 电压特性提高器件的发光效率和使用寿命。

5. 发明申请

US20110086448A1 Flip-chip light emitting diodes and method of manufacturing thereof 有权
公开(公告)号：US20110086448A1
公开(公告)日：2011-04-14
申请号：US12926638
申请日：2010-12-01
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

6. 发明授权

US08202751B2 Flip-chip light emitting diodes and method of manufacturing thereof 有权
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US08202751B2
公开(公告)日：2012-06-19
申请号：US12926638
申请日：2010-12-01
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：提供了一种倒装芯片氮化物基发光器件，其具有依次层叠在其上的n型覆盖层，有源层和p型覆盖层，包括形成在p型覆盖层上的反射层和至少一个透明导电薄膜层，其由能够抑制构成反射层的材料的扩散的透明导电材料构成，插入在p型覆盖层和反射层之间; 及其制备方法。根据本发明的倒装氮化物基发光器件及其制备方法，提供了与p型覆盖层的欧姆接触特性提高的优点，从而提高引线接合效率，在包装发光器件时的产量，由于低比接触电阻和优异的电流 - 电压特性，能够提高器件的发光效率和寿命。

7. 发明授权

US07880176B2 Top-emitting light emitting diodes and methods of manufacturing thereof 有权
标题翻译：顶部发光二极管及其制造方法
公开(公告)号：US07880176B2
公开(公告)日：2011-02-01
申请号：US11632183
申请日：2005-07-22
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发射氮化物系发光器件，其包含在p型覆盖层上形成的界面改性层和透明导电薄膜层，由形成在界面改性层上的透明导电材料构成; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线键合效率和产率在包装发光器件时，能够通过低比接触电阻和优异的电流 - 电压特性提高器件的发光效率和使用寿命。

8. 发明授权

US07872271B2 Flip-chip light emitting diodes and method of manufacturing thereof 有权
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US07872271B2
公开(公告)日：2011-01-18
申请号：US11632279
申请日：2005-07-12
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：提供了一种倒装芯片氮化物基发光器件，其具有依次层叠在其上的n型覆盖层，有源层和p型覆盖层，包括形成在p型覆盖层上的反射层和至少一个透明导电薄膜层，其由能够抑制构成反射层的材料的扩散的透明导电材料构成，插入在p型覆盖层和反射层之间; 及其制备方法。根据本发明的倒装氮化物基发光器件及其制备方法，提供了与p型覆盖层的欧姆接触特性提高的优点，从而提高引线接合效率，在包装发光器件时的产量，由于低比接触电阻和优异的电流 - 电压特性，能够提高器件的发光效率和寿命。

9. 发明授权

US07521269B2 Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same 有权
标题翻译：单晶氮化物系半导体基板及其制造方法
公开(公告)号：US07521269B2
公开(公告)日：2009-04-21
申请号：US11503720
申请日：2006-08-14
申请人： June-O Song
发明人： June-O Song
IPC分类号： H01L21/00
CPC分类号： H01L33/12 , H01L33/0075
摘要： A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues including a natural oxide layer are removed from an upper surface of the first substrate. A multifunctional substrate is grown from the seed material layer. The single-crystal nitride-based semiconductor layer including a nitride-based buffer layer is formed on the multifunctional substrate. The seed material layer primarily assists the growth of the multifunctional substrate, which is essentially required for the growth of the single-crystal nitride-based semiconductor substrate. The multifunctional substrate is prepared in the form of a single-crystal layer or a poly-crystal layer having a hexagonal crystalline structure. The light emitting device employing the single-crystal nitride-based semiconductor substrate is used as a next-generation white light source having high capacity, large area, high brightness and high performance.
摘要翻译：通过使用单晶氮化物系半导体基板制造氮化物系发光元件。种子材料层沉积在第一衬底上，其中包括自然氧化物层的有机残余物从第一衬底的上表面去除。从种子材料层生长多功能底物。在多功能基板上形成包含氮化物系缓冲层的单晶氮化物系半导体层。种子材料层主要帮助生长基本上为单晶氮化物基半导体衬底生长所需的多功能衬底的生长。多功能基板以具有六方晶系结构的单晶层或多晶层的形式制备。采用单晶氮化物类半导体衬底的发光器件用作具有高容量，大面积，高亮度和高性能的下一代白光源。

10. 发明申请

US20070034892A1 Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same 有权
标题翻译：单晶氮化物系半导体基板及其制造方法
公开(公告)号：US20070034892A1
公开(公告)日：2007-02-15
申请号：US11503720
申请日：2006-08-14
申请人： June-O Song
发明人： June-O Song
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/0075
摘要： A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues including a natural oxide layer are removed from an upper surface of the first substrate. A multifunctional substrate is grown from the seed material layer. The single-crystal nitride-based semiconductor layer including a nitride-based buffer layer is formed on the multifunctional substrate. The seed material layer primarily assists the growth of the multifunctional substrate, which is essentially required for the growth of the single-crystal nitride-based semiconductor substrate. The multifunctional substrate is prepared in the form of a single-crystal layer or a poly-crystal layer having a hexagonal crystalline structure. The light emitting device employing the single-crystal nitride-based semiconductor substrate is used as a next-generation white light source having high capacity, large area, high brightness and high performance.
摘要翻译：通过使用单晶氮化物系半导体基板制造氮化物系发光元件。种子材料层沉积在第一衬底上，其中包括自然氧化物层的有机残余物从第一衬底的上表面去除。从种子材料层生长多功能底物。在多功能基板上形成包含氮化物系缓冲层的单晶氮化物系半导体层。种子材料层主要帮助生长基本上为单晶氮化物基半导体衬底的生长所需的多功能衬底的生长。多功能基板以具有六方晶系结构的单晶层或多晶层的形式制备。采用单晶氮化物类半导体衬底的发光器件用作具有高容量，大面积，高亮度和高性能的下一代白光源。

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