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1. 发明授权

US08337952B2 Metal sulfide thin film and method for production thereof 失效
标题翻译：金属硫化物薄膜及其制造方法
公开(公告)号：US08337952B2
公开(公告)日：2012-12-25
申请号：US10525443
申请日：2003-08-27
申请人： Tadashi Takahashi , Naoyuki Takahashi , Takato Nakamura
发明人： Tadashi Takahashi , Naoyuki Takahashi , Takato Nakamura
IPC分类号： C23C16/08
CPC分类号： C07D251/14 , C01G1/12 , C01G49/12 , C23C16/305 , Y10T428/1266
摘要： An object of the present invention is to provide a single-phase film of a metal sulfide with good quality, and a method for preparing a metal sulfide film at a low cost in a convenient manner. The present invention provides a preparation method of a metal sulfide film, comprising the steps of providing metal halide, such as iron halide (FeCl3, FeI3, FeBr3, FeCl2, FeI2 and FeBr2), as a first raw material and a thioamide compound, such as thioacetamide, as a second raw material, preferably vaporizing these raw materials and reacting them at atmospheric pressure; and a metal sulfide film prepared by this method.
摘要翻译：本发明的目的是提供一种质量好的金属硫化物的单相膜以及以便宜的方式低成本地制备金属硫化物膜的方法。本发明提供了一种金属硫化物膜的制备方法，其包括以下步骤：提供金属卤化物，例如卤化铁（FeCl 3，FeI 3，FeBr 3，FeCl 2，FeI 2和FeBr 2）作为第一原料和硫代酰胺化合物，作为硫代乙酰胺，作为第二原料，优选将这些原料蒸发并在大气压下反应; 和通过该方法制备的金属硫化物膜。

2. 发明申请

US20060127692A1 Metal sulfide thin film and method for production thereof 失效
标题翻译：金属硫化物薄膜及其制造方法
公开(公告)号：US20060127692A1
公开(公告)日：2006-06-15
申请号：US10525443
申请日：2003-08-27
申请人： Tadashi Takahashi , Naoyuki Takahashi , Takato Nakamura
发明人： Tadashi Takahashi , Naoyuki Takahashi , Takato Nakamura
IPC分类号： B32B15/00 , C23C16/00
CPC分类号： C07D251/14 , C01G1/12 , C01G49/12 , C23C16/305 , Y10T428/1266
摘要： An object of the present invention is to provide a single-phase film of a metal sulfide with good quality, and a method for preparing a metal sulfide film at a low cost in a convenient manner. The present invention provides a preparation method of a metal sulfide film, comprising the steps of providing metal halide, such as iron halide (FeCl3, FeI3, FeBr3, FeCl2, FeI2 and FeBr2), as a first raw material and a thioamide compound, such as thioacetamide, as a second raw material, preferably vaporizing these raw materials and reacting them at atmospheric pressure; and a metal sulfide film prepared by this method.
摘要翻译：本发明的目的是提供一种质量好的金属硫化物的单相膜以及以便宜的方式低成本地制备金属硫化物膜的方法。本发明提供一种金属硫化物膜的制备方法，包括以下步骤：提供金属卤化物，例如卤化铁（FeCl 3，Fe 3/3，FeBr 3， 3，FeCl 2 2，Fe 2/2和FeBr 2 2），作为第一原料和硫代酰胺化合物，如硫代乙酰胺作为第二原料，优选蒸发这些原料并在大气压下使它们反应; 和通过该方法制备的金属硫化物膜。

3. 发明申请

US20060046076A1 Process for manufacturing quartz crystal element 失效
标题翻译：石英晶体元件制造工艺
公开(公告)号：US20060046076A1
公开(公告)日：2006-03-02
申请号：US10926057
申请日：2004-08-26
申请人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Yoshinori Kubo , Yoichi Shinriki , Katsumi Tamanuki
发明人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Yoshinori Kubo , Yoichi Shinriki , Katsumi Tamanuki
IPC分类号： B32B13/04 , B32B9/04
CPC分类号： C30B29/18 , C30B25/02
摘要： A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.
摘要翻译：一种制造石英晶体元件的方法包括以下步骤：在具有与石英晶体不同的晶格常数的晶体衬底的表面上形成多个石英层，其中每个石英层由结晶相和非晶形石英层中的结晶相的相位和百分比远离基板，大于与基板相邻的石英层中的结晶相的百分比; 并且通过硅氧烷和氧之间的反应在石英层的表面上离开衬底产生外延生长的石英晶体膜。

4. 发明授权

US06750728B2 Quartz oscillator and method for manufacturing the same 失效
标题翻译：石英振荡器及其制造方法
公开(公告)号：US06750728B2
公开(公告)日：2004-06-15
申请号：US10197805
申请日：2002-07-19
申请人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Hiromi Yagi , Yoichi Shinriki , Katsumi Tamanuki
发明人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Hiromi Yagi , Yoichi Shinriki , Katsumi Tamanuki
IPC分类号： H03B530
CPC分类号： H03H9/172 , H03H3/04 , H03H9/19 , H03H2003/022
摘要： A quartz oscillator includes a base, a quartz thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the quartz thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a quartz oscillator.
摘要翻译：石英振荡器包括基底，通过外延生长在基底上形成的石英薄膜，通过加工石英薄膜形成的振动片部分，以及用于使振动筘部振动的激励电极。激发电极中的至少一个可以通过沉积金属形成。用于基底的材料可以包括单元素半导体，化合物半导体和氧化物。当半导体用于基极时，半导体电路可以设置到基底以形成包括石英振荡器的模块。

5. 发明授权

US07057470B2 Quartz oscillator and method for manufacturing the same 失效
标题翻译：石英振荡器及其制造方法
公开(公告)号：US07057470B2
公开(公告)日：2006-06-06
申请号：US10825370
申请日：2004-04-16
申请人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Hiromi Yagi , Yoichi Shinriki , Katsumi Tamanuki
发明人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Hiromi Yagi , Yoichi Shinriki , Katsumi Tamanuki
IPC分类号： H03B5/32
CPC分类号： H03H9/172 , H03H3/04 , H03H9/19 , H03H2003/022
摘要： A quartz oscillator includes a base having a recessed portion provided on one face thereof by processing to have an inverse mesa shape, a quartz thin-film formed on the other face of the base by epitaxial growth to have a thickness of 10 μm or less, a vibrating reed portion, and excitation electrodes for mechanically supporting the quartz thin-film and for vibrating the vibrating reed portion.
摘要翻译：石英振荡器包括通过加工具有逆台面形状的在其一个表面上设置的凹部的基底，通过外延生长形成10μm或更小的厚度的在基底的另一个表面上形成的石英薄膜，振动筘部分，以及用于机械地支撑石英薄膜并振动振动筘部分的激励电极。

6. 发明授权

US06844074B2 Crystal thin film and production method therefor 失效
标题翻译：水晶薄膜及其制作方法
公开(公告)号：US06844074B2
公开(公告)日：2005-01-18
申请号：US09767154
申请日：2001-01-23
申请人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Hiromi Yagi , Yoichi Shinriki , Katsumi Tamanuki
发明人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Hiromi Yagi , Yoichi Shinriki , Katsumi Tamanuki
IPC分类号： C30B29/18 , C23C16/40 , C30B23/00 , C30B25/00 , C30B25/02 , C30B28/12 , C30B28/14 , C30B29/06 , C30B29/10 , G02B6/13 , G02B6/132 , H01L21/00 , H01L31/072 , H01L35/24 , H01L41/18 , H01L41/316 , H01L41/319 , H01L41/39
CPC分类号： C30B25/02 , C30B29/06 , C30B29/10 , Y10T428/31504
摘要： A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.
摘要翻译：提供了石英薄膜的单晶及其制造方法。一种生产石英外延薄膜的方法包括以下步骤：在大气压下将作为硅源的硅醇盐汽化，将氯化氢作为反应促进剂将硅醇盐引入底物，并将硅酸乙酯与氧气反应以沉积石英在基板上。石英薄膜的单晶具有优异的结晶度和光学性能。

7. 发明授权

US07311777B2 Process for manufacturing quartz crystal element 失效
标题翻译：石英晶体元件制造工艺
公开(公告)号：US07311777B2
公开(公告)日：2007-12-25
申请号：US10926057
申请日：2004-08-26
申请人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Yoshinori Kubo , Yoichi Shinriki , Katsumi Tamanuki
发明人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Yoshinori Kubo , Yoichi Shinriki , Katsumi Tamanuki
IPC分类号： G02B6/13
CPC分类号： C30B29/18 , C30B25/02
摘要： A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.
摘要翻译：一种制造石英晶体元件的方法包括以下步骤：在具有与石英晶体不同的晶格常数的晶体衬底的表面上形成多个石英层，其中每个石英层由结晶相和非晶形石英层中的结晶相的相位和百分比远离基板，大于与基板相邻的石英层中的结晶相的百分比; 并且通过硅氧烷和氧之间的反应在石英层的表面上离开衬底产生外延生长的石英晶体膜。

8. 发明授权

US07186295B2 Quartz thin film 失效
标题翻译：石英薄膜
公开(公告)号：US07186295B2
公开(公告)日：2007-03-06
申请号：US10727613
申请日：2003-12-05
申请人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Hiromi Yagi , Yoichi Shinriki , Katsumi Tamanuki
发明人： Naoyuki Takahashi , Takato Nakamura , Satoshi Nonaka , Hiromi Yagi , Yoichi Shinriki , Katsumi Tamanuki
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B29/06 , C30B29/10 , Y10T428/31504
摘要： A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.
摘要翻译：提供了石英薄膜的单晶及其制造方法。一种生产石英外延薄膜的方法包括以下步骤：在大气压下将作为硅源的硅醇盐汽化，以氯化氢作为反应促进剂将硅醇盐引入底物，并将硅酸乙酯与氧气反应以沉积石英在基板上。石英薄膜的单晶具有优异的结晶度和光学性能。

9. 发明授权

US08883060B2 Method for producing FRP cylinder and FRP cylinder 有权
标题翻译：制造FRP气缸和FRP气缸的方法
公开(公告)号：US08883060B2
公开(公告)日：2014-11-11
申请号：US13144778
申请日：2010-01-14
申请人： Takato Nakamura , Norio Matsumoto , Naoki Kimoto
发明人： Takato Nakamura , Norio Matsumoto , Naoki Kimoto
IPC分类号： B29C53/56 , B29C70/32 , B29K101/10 , B29K105/24 , B29L23/00
CPC分类号： B29C70/32 , B29K2101/10 , B29K2105/246 , B29L2023/22 , Y10T428/24058
摘要： A method is provided for producing a weight-reduced FRP cylinder which can attain high strength, and also such an FRP cylinder is provided. This FRP cylinder producing method, in which a plurality of prepregs formed by impregnating reinforced fibers with thermosetting resin sheets are wound into a cylinder and thermally cured to be formed as a plurality of FRP layers, includes a simultaneous multilayer winding process in which a torsional rigidity retaining prepreg and a buckling prevention prepreg are continuously wound a plurality of turns with being layered on each other when the plurality of prepregs are wound into a cylinder, wherein the torsional rigidity retaining prepreg includes a layer of fibers oblique to a cylindrical axis direction of the FRP cylinder, and wherein the buckling prevention prepreg includes a layer of fibers orthogonal to the cylindrical axis direction.
摘要翻译：提供了一种制造能够获得高强度的减重FRP气缸的方法，并且还提供了这种FRP气缸。这种FRP气缸的制造方法，其中将通过用热固性树脂片浸渍增强纤维形成的多个预浸料坯卷绕成圆筒并热固化以形成为多个FRP层，包括同时多层缠绕工艺，其中扭转刚度当多个预浸料坯被卷绕到圆筒中时，保持预浸料坯和抗弯曲预浸料坯在彼此层叠的状态下连续地卷绕多圈，其中扭转刚性保持预浸料坯包括相对于圆筒轴线方向倾斜的纤维层 FRP圆筒，并且其中所述抗弯曲预浸料包括与所述圆柱轴线方向正交的纤维层。

10. 发明授权

US08541615B2 Method for producing biphenyltetracarboxylic acid tetraester 有权
标题翻译：联苯四羧酸四酯的制备方法
公开(公告)号：US08541615B2
公开(公告)日：2013-09-24
申请号：US13057600
申请日：2009-08-06
申请人： Masayuki Nishio , Hiroaki Imajima , Takato Nakamura , Yoshihiro Yamauchi
发明人： Masayuki Nishio , Hiroaki Imajima , Takato Nakamura , Yoshihiro Yamauchi
IPC分类号： C07C69/604
CPC分类号： C07C67/343 , C07C69/76
摘要： Disclosed is a method for producing a biphenyltetracarboxylic acid ester by oxidative coupling a phthalic acid ester by using a catalyst comprising at least a palladium salt, a copper salt and a β-dicarbonyl compound in the presence of a molecular oxygen, wherein the β-dicarbonyl compound is supplied into a reaction mixture liquid intermittently at an interval of less than 30 minutes, or continuously. This method allows, in particular, the selective and economical production of an asymmetric biphenyltetracarboxylic acid tetraester such as 2,3,3′,4′-biphenyltetracarboxylic acid tetraester.
摘要翻译：公开了一种通过在分子氧存在下使用至少包含钯盐，铜盐和β-二羰基化合物的催化剂氧化偶联邻苯二甲酸酯来制备联苯四羧酸酯的方法，其中β-二羰基将化合物间歇地以小于30分钟的间隔或连续地供给到反应混合物液体中。该方法特别是选择性和经济地生产不对称联苯四羧酸四酯如2,3,3'，4'-联苯四羧酸四酯。

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