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1. 发明授权

US6057636A Micro power switch using a cold cathode and a driving method thereof 失效
标题翻译：使用冷阴极的微功率开关及其驱动方法
公开(公告)号：US6057636A
公开(公告)日：2000-05-02
申请号：US931417
申请日：1997-09-16
申请人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiromichi Ohashi , Kazuya Nakayama
发明人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiromichi Ohashi , Kazuya Nakayama
IPC分类号： H01J1/304 , H01J19/24 , H01J21/10 , H03K17/54 , H01J1/46 , H01J1/02 , H01J1/05
CPC分类号： H01J21/105 , H03K17/545
摘要： The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.
摘要翻译：本发明提供了一种微功率开关，其包括用于发射电子的冷阴极，用于捕获从冷阴极发射的电子的阳极和用于控制从冷阴极发射的电子的量的控制电极，其中冷阴极为由具有比控制电极更小的电子发射势垒的材料制成，阳极相对于冷阴极施加正电位，并且控制电极施加等于或低于冷阴极电位的电位。

2. 发明授权

US06297586B1 Cold-cathode power switching device of field-emission type 失效
标题翻译：场致发射型冷阴极功率开关器件
公开(公告)号：US06297586B1
公开(公告)日：2001-10-02
申请号：US09263217
申请日：1999-03-05
申请人： Kazuya Nakayama , Tadashi Sakai , Naoshi Sakuma , Tomio Ono
发明人： Kazuya Nakayama , Tadashi Sakai , Naoshi Sakuma , Tomio Ono
IPC分类号： H01J116
CPC分类号： H01J21/105 , H01J1/3044
摘要： Disclosed herein are a cold-cathode power switching device and a method of manufacturing the same. The device has a high voltage resistance and can be manufactured with high yield though its element area is large to control large currents. In the method, arrays of miniature emitters are prepared, and the emitter arrays are adhered to a conductive substrate having trenches. The conductive substrate is cut along the trenches, forming a plurality of substrates. The gaps between these substrates are filled with insulating resin. As a result, a multi-module power switching device for controlling large currents is manufactured with high yield. Further, cold-cathode modules, each having a gate pad, are arranged on a cathode electrode made of a conducive substrate, insulating strips are formed on the cathode electrode, gate lines are formed on the insulating strips, and the gate pads are connected to the gate lines. The electrons emitted from the modules can be controlled at a time. Each module may have a cathode pad connected to a cathode line. Depressions are made in those part of an anode electrode which oppose the gate pads and cathode pads, providing a sufficient insulation distance between each emitter and the anode electrode. Hence, a cold-cathode power switching device of field emission type can be provided which has a high voltage resistance.
摘要翻译：本文公开了一种冷阴极电力开关装置及其制造方法。该器件具有高耐压性，并且可以以高产率制造，尽管其元件面积大以控制大电流。在该方法中，制备微型发射体的阵列，并且发射极阵列粘附到具有沟槽的导电衬底上。沿着沟槽切割导电衬底，形成多个衬底。这些基板之间的间隙用绝缘树脂填充。结果，以高产率制造用于控制大电流的多模块功率开关装置。此外，在由导电基板制成的阴极上配置有具有栅极焊盘的冷阴极模块，在阴极上形成绝缘条，在绝缘条上形成栅极线，栅极连接到门线。可以一次控制从模块发射的电子。每个模块可以具有连接到阴极线的阴极焊盘。在与栅极焊盘和阴极焊盘相对的阳极电极的那些部分进行抑制，从而在每个发射极和阳极电极之间提供足够的绝缘距离。因此，可以提供具有高耐电压性的场致发射型冷阴极功率开关器件。

3. 发明授权

US06323831B1 Electron emitting device and switching circuit using the same 失效
标题翻译：电子发射器件和使用其的开关电路
公开(公告)号：US06323831B1
公开(公告)日：2001-11-27
申请号：US09153086
申请日：1998-09-15
申请人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Kazuya Nakayama
发明人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Kazuya Nakayama
IPC分类号： G09G322
CPC分类号： H01J3/022 , H01J7/44 , H01J19/78
摘要： An electron emitting comprising an emitter electrode for emitting electrons when applied with an electric field, a gate electrode for extracting the electrons emitted from the emitter electrode, when applied with a voltage from a signal source, the voltage being positive with respect to the emitter electrode, an anode electrode connected to a load, for collecting the electrons extracted by the gate electrode, and for passing an anode current, and a gate resistor connected between the signal source and the gate electrode, for reducing a gate current flowing in the gate electrode, without changing an anode current flowing in the anode, and for lowering a gate voltage by utilizing a voltage drop cause by the gate current.
摘要翻译：一种电子发射器，包括用于在施加电场时发射电子的发射极电极，用于从发射极发射的电子提取的栅电极，当施加来自信号源的电压时，该电压相对于发射电极为正连接到负载的阳极，用于收集由栅电极提取的电子和用于通过阳极电流，以及连接在信号源和栅电极之间的栅极电阻，用于减少在栅电极中流动的栅极电流，而不改变在阳极中流动的阳极电流，并且通过利用由栅极电流引起的电压降降低栅极电压。

4. 发明授权

US07642542B2 Semiconductor light-emitting device and producing method for the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07642542B2
公开(公告)日：2010-01-05
申请号：US11531577
申请日：2006-09-13
申请人： Mariko Suzuki , Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida
发明人： Mariko Suzuki , Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/24
CPC分类号： H01L33/02 , H01L33/24 , H01L33/44 , H01L33/58
摘要： A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.
摘要翻译：一种半导体发光器件包括：第一半导体层; 发光层设置在所述第一半导体层上; 设置在发光层上的第二半导体层和连接到第一半导体层和第二半导体层的金属电极。发光层的折射率低于第一半导体层。第二半导体层的折射率低于发光层。金属电极向发光层提供电流。

5. 发明授权

US07528535B2 Cold cathode, cold cathode discharge lamp, and method for producing the same 有权
标题翻译：冷阴极，冷阴极放电灯及其制造方法
公开(公告)号：US07528535B2
公开(公告)日：2009-05-05
申请号：US11075883
申请日：2005-03-10
申请人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki , Hiroaki Yoshida
发明人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki , Hiroaki Yoshida
IPC分类号： H01J1/62
CPC分类号： H01J1/32 , H01J9/247 , H01J65/046
摘要： A cold cathode discharge lamp includes: a transparent hollow housing; a fluorescent film formed on inner surfaces of the hollow housing; a pair of cold cathodes that are located in the hollow housing; and a discharge gas that contains hydrogen gas sealed within the hollow housing. Each of the cold cathodes includes: a supporting body that has conductivity; an insulating diamond film formed on the supporting body; and an insulating layer that insulates the supporting body from the insulating diamond film.
摘要翻译：冷阴极放电灯包括：透明中空壳体; 形成在中空壳体的内表面上的荧光膜; 位于中空壳体中的一对冷阴极; 以及包含密封在中空壳体内的氢气的放电气体。每个冷阴极包括：具有导电性的支撑体; 形成在所述支撑体上的绝缘金刚石膜; 以及将支撑体与绝缘金刚石膜绝缘的绝缘层。

6. 发明申请

US20070046170A1 Cold cathode for discharge lamp having diamond film 有权
标题翻译：具有金刚石薄膜的放电灯的冷阴极
公开(公告)号：US20070046170A1
公开(公告)日：2007-03-01
申请号：US11366468
申请日：2006-03-03
申请人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
发明人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
IPC分类号： H01J1/62
CPC分类号： H01J61/0672 , H01J9/022 , H01J61/0675 , H01J61/72
摘要： A cold cathode for a discharge lamp includes a metal plate that has bending portions; a diamond film that is formed on a face of the metal plate, except for the bending portions; and a metal member that is mounted on the metal plate.
摘要翻译：用于放电灯的冷阴极包括具有弯曲部分的金属板; 形成在所述金属板的除了所述弯曲部之外的表面上的金刚石膜; 以及安装在金属板上的金属构件。

7. 发明申请

US20070029935A1 Electron emission device 审中-公开
标题翻译：电子发射装置
公开(公告)号：US20070029935A1
公开(公告)日：2007-02-08
申请号：US11495731
申请日：2006-07-31
申请人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
发明人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
IPC分类号： H01J17/02
CPC分类号： H01J21/04 , H01J3/021
摘要： The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode.
摘要翻译：电子发射装置包括第一电极; 具有面对第一电极的第一面和与第一面相对的第二面的半导体势垒，形成有宽带隙半导体; 形成密封在第一电极和半导体势垒之间的空间的绝缘材料; 封闭在空间中的惰性气体; 第二电极，被设置为面对介于其间的真空的半导体势垒的第二面; 第一电压施加单元，其在所述第一电极和所述半导体势垒之间施加电压; 以及在半导体阻挡层和第二电极之间施加电压的第二施加电压单元。

8. 发明授权

US06103133A Manufacturing method of a diamond emitter vacuum micro device 失效
标题翻译：金刚石发射体真空微器件的制造方法
公开(公告)号：US06103133A
公开(公告)日：2000-08-15
申请号：US42738
申请日：1998-03-17
申请人： Naoshi Sakuma , Tomio Ono , Tadashi Sakai
发明人： Naoshi Sakuma , Tomio Ono , Tadashi Sakai
IPC分类号： C23C16/26 , C23C16/27 , C23C16/44 , H01J9/02 , B44C1/22 , C23C14/34
CPC分类号： C23C16/27 , H01J9/025 , H01J2201/30457
摘要： The present invention intends to provide a manufacturing method of a vacuum micro device, including the steps of forming diamond nuclei on a substrate, forming emitters by etching the substrate with use of the diamond nuclei as a mask, forming an insulating layer and a gate electrode layer as a gate electrode on the emitters, such that the insulating layer and the gate electrode layer are stacked in order, and exposing the diamond nuclei by partially etching the gate electrode layer and the insulating layer.
摘要翻译：本发明旨在提供一种真空微型器件的制造方法，包括以下步骤：在衬底上形成金刚石核，通过使用金刚石核作为掩模蚀刻衬底来形成发射体，形成绝缘层和栅电极层，作为发射极上的栅电极，使得绝缘层和栅电极层依次层叠，并通过部分蚀刻栅电极层和绝缘层来暴露金刚石核。

9. 发明申请

US20070218660A1 DIAMOND FILM FORMATION METHOD AND FILM FORMATION JIG THEREOF 有权
标题翻译：金刚石薄膜形成方法和薄膜形成
公开(公告)号：US20070218660A1
公开(公告)日：2007-09-20
申请号：US11674354
申请日：2007-02-13
申请人： Hiroaki Yoshida , Isamu Yanase , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Tadashi Sakai
发明人： Hiroaki Yoshida , Isamu Yanase , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Tadashi Sakai
IPC分类号： H01L21/20
CPC分类号： C30B29/04 , C30B25/105 , H01L21/02381 , H01L21/02425 , H01L21/02444 , H01L21/02527 , H01L21/0262 , H01L21/02645
摘要： A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.
摘要翻译：金刚石膜的形成方法包括在金属材料和半导体材料的复合物中，在低于650℃的温度下，在至少含有碳和氢的第一混合气体中，在金属材料的表面上形成金刚石核，以及在低于750℃的温度下在包含至少碳和氢的第二混合气体中生长在复合材料中形成的金刚石核，以形成金刚石膜。

10. 发明申请

US20070216024A1 HEAT SINK, ELECTRONIC DEVICE, METHOD OF MANUFACTURING HEAT SINK, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE 失效
标题翻译：散热器，电子设备，制造散热器的方法及制造电子设备的方法
公开(公告)号：US20070216024A1
公开(公告)日：2007-09-20
申请号：US11534355
申请日：2006-09-22
申请人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
发明人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
IPC分类号： H01L23/34
CPC分类号： H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： A heat sink includes a base portion formed of insulating diamond, and a plurality of pressure contacting members formed of the insulating diamond and arranged on the base portion
摘要翻译：散热器包括由绝缘金刚石形成的基部和由绝缘金刚石形成并且布置在基部上的多个压力接触部件

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