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1. 发明申请

US20060289116A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060289116A1
公开(公告)日：2006-12-28
申请号：US11488059
申请日：2006-07-18
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32357 , H01J37/3244
摘要： A plasma processing apparatus comprises a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a plasma gas supply part for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed, and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, a plurality of second apertures in communication with the process gas passage and a diffusion part provided opposite to the second aperture for diffusing process gas released from the second aperture.
摘要翻译：等离子体处理装置包括由外壁限定的处理容器，具有用于保持要处理的基板的台，连接到处理容器的抽空系统，用于将等离子体气体供应到处理容器的内部的等离子体气体供应部设置在处理容器上的与要处理的基板相对应的微波天线，以及处理气体供给部，其设置在台面上的待处理基板与等离子体气体供给部之间，以与待处理基板相对，其中处理气体供应部分包括用于通过形成在处理容器内部的等离子体的多个第一孔，能够连接到处理气体源的处理气体通道，与第二孔连通的多个第二孔处理气体通道和与第二孔相对设置的用于扩散从第二孔释放的处理气体的扩散部分。

2. 发明授权

US07115184B2 Plasma processing device 有权
标题翻译：等离子处理装置
公开(公告)号：US07115184B2
公开(公告)日：2006-10-03
申请号：US10276673
申请日：2002-03-28
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32357 , H01J37/3244
摘要： A plasma processing apparatus includes a processing vessel, a means for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a means for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel, and a process gas supply part comprised of two components. The first component includes a plurality of first apertures for passing through plasma formed in interior of the processing vessel, a process gas passage, and a plurality of second apertures in communication with the process gas passage. The second component includes a plurality of third apertures axially aligned with the first apertures in the first component and diffusion surfaces upon recessed areas of the second component, located opposite to the second apertures in the first component.
摘要翻译：等离子体处理装置包括处理容器，用于保持要处理的基板的装置，耦合到处理容器的抽空系统，用于向处理容器的内部供应等离子体气体的装置，设置在处理容器上的微波天线，以及由两个部件组成的工艺气体供给部。第一部件包括用于穿过形成在处理容器内部的等离子体的多个第一孔，处理气体通道和与处理气体通道连通的多个第二孔。第二部件包括与第一部件中的第一孔轴向对齐的多个第三孔和位于第二部件的与第一部件中的第二孔相对的凹陷区域上的扩散表面。

3. 发明授权

US07670454B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07670454B2
公开(公告)日：2010-03-02
申请号：US11337026
申请日：2006-01-23
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.
摘要翻译：在微波等离子体处理装置中，通过在微波供给波导与微波天线之间设置锥形表面或具有介质介电常数的构件来减小微波提供波导与微波天线之间的接合单元的微波反射，从而中等阻抗变化。因此，提高供电效率，减少放电确保等离子体的稳定形成。

4. 发明授权

US07329609B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US07329609B2
公开(公告)日：2008-02-12
申请号：US10467820
申请日：2002-12-10
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama
IPC分类号： H01L21/302
CPC分类号： H01L21/02247 , C23C8/36 , H01J37/321 , H01J37/32357 , H01L21/02252 , H01L21/3143 , H01L21/318
摘要： In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures (131a) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.
摘要翻译：在衬底处理装置中，控制电极（131）分离包括待处理衬底和不包括衬底的等离子体形成空间（11B）的处理空间（11C）。控制电极包括形成在处理容器中并具有用于使等离子体通过的多个孔（131a）的导电构件。控制电极的表面被氧化铝或导电氮化物覆盖。在基板处理装置中，将含有He和N 2的气体供给到处理容器中。在等离子体形成空间中，在原子态氮N *被激发的条件下形成等离子体。原子态氮N *用于氮化衬底的表面。

5. 发明授权

US07141756B2 Microwave plasma processing apparatus, plasma ignition method, plasma forming method, and plasma processing method 失效
标题翻译：微波等离子体处理装置，等离子体点火方法，等离子体成形方法和等离子体处理方法
公开(公告)号：US07141756B2
公开(公告)日：2006-11-28
申请号：US10473062
申请日：2002-03-28
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： B23K10/00 , B23K9/00
CPC分类号： H01J37/32192 , C23C16/517 , H01J37/32009 , H01J37/32339
摘要： A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.
摘要翻译：公开了一种微波等离子体处理装置，其能够在等离子体处理的压力下实现快速容易的等离子体点火。在微波等离子体处理装置中，提供等离子体点火促进单元以促进由微波引起的等离子体点火。等离子体点火促进单元包括发射真空紫外线的氘灯和允许真空紫外线穿透和照射等离子体激发空间的透射窗。传输窗是凸透镜，聚焦真空紫外线以增强等离子体激发气体的离子化。通过这样的结构，能够容易且快速地引起等离子体点火。

6. 发明授权

US07097735B2 Plasma processing device 失效
标题翻译：等离子处理装置
公开(公告)号：US07097735B2
公开(公告)日：2006-08-29
申请号：US10296614
申请日：2002-03-28
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3244 , C23C16/511 , C30B25/105 , H01J37/32192
摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, the efficiency of cooling of a shower plate is optimized and simultaneously the efficiency of microwave excitation is optimized, by causing a radiation surface of the radial line slot antenna to make an intimate contact with a cover plate that forms a part of an outer wall of the processing chamber and makes an intimate contact with the shower plate.
摘要翻译：在使用径向线槽天线的微波等离子体处理装置中，优化喷淋板的冷却效率，同时通过使径向线槽天线的辐射面进行紧密接触，微波激发的效率最优化具有形成处理室的外壁的一部分并与淋浴板紧密接触的盖板。

7. 发明申请

US20060118241A1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20060118241A1
公开(公告)日：2006-06-08
申请号：US11337026
申请日：2006-01-23
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.
摘要翻译：在微波等离子体处理装置中，通过在微波供给波导与微波天线之间设置锥形表面或具有介质介电常数的构件来减小微波提供波导与微波天线之间的接合单元的微波反射，从而中等阻抗变化。因此，提高供电效率，减少放电确保等离子体的稳定形成。

8. 发明授权

US06975018B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06975018B2
公开(公告)日：2005-12-13
申请号：US10452000
申请日：2001-12-27
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyukil Shirai
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyukil Shirai
IPC分类号： H01L21/28 , H01L21/306 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/76 , H01L21/8234 , H01L21/8239 , H01L21/8246 , H01L21/8247 , H01L27/00 , H01L27/088 , H01L27/105 , H01L27/115 , H01L27/12 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L23/58
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02307 , H01L21/02315 , H01L21/30604 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/31662 , H01L21/3185 , H01L21/823462 , H01L27/105 , H01L27/1052 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66757 , H01L29/78603 , H01L29/78645
摘要： In a fabrication method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of a silicon surface in advance, and the hydrogen is removed by exposing the silicon surface to a first inert gas plasma. Thereafter, plasma is generated by a mixed gas of a second inert gas and one or more gaseous molecules, and a silicon compound layer containing at least a part of the elements constituting the gaseous molecules is formed on the surface of the silicon gas.
摘要翻译：在包括多个硅基晶体管或电容器的半导体器件的制造方法中，预先至少在硅表面的一部分中存在氢，并且通过将硅表面暴露于第一惰性气体等离子体来除去氢。此后，通过第二惰性气体和一种或多种气体分子的混合气体产生等离子体，并且在硅气体的表面上形成含有构成气体分子的至少一部分元素的硅化合物层。

9. 发明授权

US07404991B2 Device and control method for micro wave plasma processing 有权
标题翻译：微波等离子体处理装置与控制方法
公开(公告)号：US07404991B2
公开(公告)日：2008-07-29
申请号：US10472849
申请日：2002-03-28
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： H05H1/24
CPC分类号： H01J37/32266 , H01J37/32192 , H01J37/32954 , H01J37/3299
摘要： A microwave is introduced into a process chamber through a waveguide (26) of the plasma process apparatus, thereby generating plasma. A reflection monitor (40) and an electric power monitor (42) monitor the electric power of a reflected wave reflected by the plasma that is generated in the process chamber. Moreover, an incidence monitor (36) and a frequency monitor (48) monitor the frequency of the microwave generated by a magnetron (24). An electric power supplied to the magnetron (24) is controlled based on the monitored electric power of the reflected wave and the monitored frequency. This method thus controls plasma density to a constant level.
摘要翻译：通过等离子体处理装置的波导（26）将微波引入处理室，从而产生等离子体。反射监视器（40）和电力监视器（42）监视由处理室中产生的等离子体反射的反射波的电力。此外，入射监视器（36）和频率监视器（48）监视由磁控管（24）产生的微波的频率。基于受监测的反射波电力和被监测频率来控制提供给磁控管（24）的电力。因此，该方法将等离子体密度控制到恒定水平。

10. 发明申请

US20060231208A1 Plasma processing apparatus, plasma processing method and wave retardation plate 审中-公开
标题翻译：等离子体处理装置，等离子体处理方法和波长延迟板
公开(公告)号：US20060231208A1
公开(公告)日：2006-10-19
申请号：US11452402
申请日：2006-06-14
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： H01J37/32211 , H01J37/32192
摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constituting the wave retardation plate (18). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.
摘要翻译：在使用径向线缝隙天线的微波等离子体处理装置中，槽板（16）由热膨胀率接近波形延迟板（18）的材料形成，或者在构成波长延迟板（18）。波长相对板与构成微波辐射面的槽板之间的紧密接触被改善，以防止异常放电。

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