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1. 发明授权

US6051851A Semiconductor devices utilizing silicide reaction 失效
标题翻译：利用硅化物反应的半导体器件
公开(公告)号：US6051851A
公开(公告)日：2000-04-18
申请号：US917675
申请日：1997-08-26
申请人： Tadahiro Ohmi , Mamoru Miyawaki , Yoshio Nakamura , Hiroshi Suzuki , Takeo Yamashita
发明人： Tadahiro Ohmi , Mamoru Miyawaki , Yoshio Nakamura , Hiroshi Suzuki , Takeo Yamashita
IPC分类号： H01L21/82 , G11C17/16 , H01L23/525 , H01L27/10 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L27/112 , G11C17/16 , H01L23/5252 , H01L27/11206 , H01L2924/0002 , H01L2924/3011
摘要： Cheap semiconductor memory devices are provided so as to enable high-speed writing and reading but rarely to malfunction, thus being high in reliability. In a semiconductor device which comprises a plurality of cells each having a semiconductor layer between a pair of conductors, at least one of the pair of conductors is made of a metal, and the semiconductor layer comprises an amorphous silicon that can form a silicide region with the metal as reacting at a reaction rate of not less than 10 m/sec. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is made of a metal silicide-reacting with the amorphous silicon, and in that the silicide region formed is conic. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is formed of a metal silicide-reacting with the amorphous silicon, and in that a film-formed surface is produced without being exposed to an oxide atmosphere, between a step of forming the amorphus silicon and a step of forming the metal.
摘要翻译：提供廉价的半导体存储器件，以便能够进行高速写入和读取，但很少发生故障，因此可靠性高。在包括多个单元的半导体器件中，每个单元各自在一对导体之间具有半导体层，所述一对导体中的至少一个导体由金属制成，并且所述半导体层包括可形成硅化物区域的非晶硅，金属以不小于10m /秒的反应速率反应。另一种器件的特征在于，半导体层是非晶硅，其中该对导体中的至少一个导体由与非晶硅反应的金属硅化物制成，并且形成的硅化物区域是圆锥形。另一种器件的特征在于，半导体层是非晶硅，其中该对导体中的至少一个导体由与非晶硅反应的金属硅化物形成，并且由此形成膜形成表面而不暴露在氧化物气氛之间，形成无定形硅的步骤和形成金属的步骤。

2. 发明授权

US4692789A Semiconductor apparatus 失效
标题翻译：半导体装置
公开(公告)号：US4692789A
公开(公告)日：1987-09-08
申请号：US516543
申请日：1983-07-22
申请人： Yoshio Nakamura , Susumo Sugiyama , Jun-ichi Nishizawa , Tadahiro Ohmi
发明人： Yoshio Nakamura , Susumo Sugiyama , Jun-ichi Nishizawa , Tadahiro Ohmi
IPC分类号： H01L21/60 , H01L23/66 , H01L23/02
CPC分类号： H01L24/33 , H01L23/66 , H01L24/32 , H01L24/49 , H01L2223/6644 , H01L2224/45014 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/01088 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/16195 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111
摘要： In a semiconductor apparatus for controlling a large current at a high speed, a lead conductor coupled to a control electrode of a semiconductor device sealed in a package comprises a conductor plate having a width equal to or greater than one side or a diameter of the semiconductor device, thereby decreasing impedance against a high-frequency input signal.
摘要翻译：在用于高速控制大电流的半导体装置中，与密封在封装体中的半导体装置的控制电极耦合的引线导体包括宽度等于或大于半导体的一侧或直径的导体板从而降低针对高频输入信号的阻抗。

3. 发明授权

US5918115A Method of manufacturing a surrounding gate type MOSFET 失效
公开(公告)号：US5918115A
公开(公告)日：1999-06-29
申请号：US901936
申请日：1997-07-29
申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
发明人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
IPC分类号： H01L27/115 , H01L21/332
CPC分类号： H01L27/115 , H01L2924/0002
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

4. 发明授权

US5633182A Method of manufacturing an image display device with reduced cell gap variation 失效
标题翻译：具有减小的电池间隙变化的图像显示装置的制造方法
公开(公告)号：US5633182A
公开(公告)日：1997-05-27
申请号：US570809
申请日：1995-12-12
申请人： Mamoru Miyawaki , Shigeki Kondo , Yoshio Nakamura , Tetsunobu Kouchi
发明人： Mamoru Miyawaki , Shigeki Kondo , Yoshio Nakamura , Tetsunobu Kouchi
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/02 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： G02F1/13454 , H01L29/78648 , G02F1/133512 , G02F2201/48 , G02F2202/105 , Y10S438/96
摘要： Variations in the individual liquid crystal cells and cross-talk between adjacent pixels are reduced, stable operation is maintained and the aperture and the S/N ratio are increased by providing a transistor and an interconnection layer therefor on one surface of an insulating layer while providing an electrode for applying a voltage to a liquid crystal on the other surface thereof. One major electrode portion of the transistor and the liquid crystal voltage applying electrode are connected to each other using an electrode via an opening. Also, the electrode for connecting the major electrode portion 3 to the liquid crystal voltage applying electrode is provided on the other surface of the insulating layer such that it shield the transistor from light.
摘要翻译：单个液晶单元的变化和相邻像素之间的串扰减少，通过在绝缘层的一个表面上提供晶体管及其互连层来提供稳定的操作并且增加孔径和S / N比，同时提供用于在其另一个表面上向液晶施加电压的电极。晶体管的一个主电极部分和液晶电压施加电极通过开口使用电极彼此连接。此外，在绝缘层的另一个表面上设置用于将主电极部分3连接到液晶电压施加电极的电极，以便它将光电晶体管屏蔽。

5. 发明授权

US5466961A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5466961A
公开(公告)日：1995-11-14
申请号：US872295
申请日：1992-04-22
申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
发明人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
IPC分类号： H01L27/115 , H01L27/02 , H01L29/10
CPC分类号： H01L27/115 , H01L2924/0002
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要翻译：一种半导体器件，包括：绝缘栅型晶体管，其具有形成在半导体衬底的主侧上的柱状半导体区域，形成在柱状半导体区域的侧表面上的栅电极，同时插入栅极绝缘膜和分别形成的主电极区域形成在柱状半导体区域的下方; 以及形成在上主电极区域上并且可以被电断开的存储元件。

6. 发明授权

US5739565A Semiconductor device and manufacturing process therefor 失效
标题翻译：包含形成在ram缝间隙的电容器的半导体器件
公开(公告)号：US5739565A
公开(公告)日：1998-04-14
申请号：US365318
申请日：1994-12-28
申请人： Yoshio Nakamura , Mamoru Miyawaki , Isamu Ueno
发明人： Yoshio Nakamura , Mamoru Miyawaki , Isamu Ueno
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10861
摘要： A semiconductor device with holes of porous texture in a part of the surface of a semiconductor substrate. The holes are filled with a conductive material across an insulating layer.
摘要翻译：一种在半导体衬底表面的一部分中具有多孔结构孔的半导体器件。孔穿过绝缘层填充有导电材料。

7. 发明授权

US5317433A Image display device with a transistor on one side of insulating layer and liquid crystal on the other side 失效
标题翻译：图像显示装置在绝缘层的一侧具有晶体管，另一侧具有液晶
公开(公告)号：US5317433A
公开(公告)日：1994-05-31
申请号：US984099
申请日：1992-12-01
申请人： Mamoru Miyawaki , Shigeki Kondo , Yoshio Nakamura , Tetsunobu Kouchi
发明人： Mamoru Miyawaki , Shigeki Kondo , Yoshio Nakamura , Tetsunobu Kouchi
IPC分类号： G02F1/1335 , G02F1/1362 , H01L21/77 , G02F1/1343 , G02F1/1333
CPC分类号： G02F1/13454 , G02F1/133512 , G02F2201/48 , G02F2202/105 , H01L2221/68363 , H01L27/1214 , H01L27/1266
摘要： Variations in the individual liquid crystal cells and cross-talk between adjacent pixels are reduced, stable operation is maintained and the aperture and the S/N ratio are increased by providing a transistor and an interconnection layer therefor on one surface of an insulating layer while providing an electrode for applying a voltage to a liquid crystal on the other surface thereof. One major electrode portion of the transistor and the liquid crystal voltage applying electrode are connected to each other using an electrode via an opening. Also, the electrode for connecting the major electrode portion 3 to the liquid crystal voltage applying electrode is provided on the other surface of the insulating layer such that it shield the transistor from light.
摘要翻译：单个液晶单元的变化和相邻像素之间的串扰减少，通过在绝缘层的一个表面上提供晶体管及其互连层来提供稳定的操作并且增加孔径和S / N比，同时提供用于在其另一个表面上向液晶施加电压的电极。晶体管的一个主电极部分和液晶电压施加电极通过开口使用电极彼此连接。此外，在绝缘层的另一个表面上设置用于将主电极部分3连接到液晶电压施加电极的电极，以便它将光电晶体管屏蔽。

8. 发明授权

US5598037A Semiconductor device with a contact member made of semiconductor material having a columnar structure 失效
标题翻译：具有由具有柱状结构的半导体材料制成的接触构件的半导体器件
公开(公告)号：US5598037A
公开(公告)日：1997-01-28
申请号：US404746
申请日：1995-03-15
申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
发明人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
IPC分类号： H01L27/115 , H01L27/02 , H01L29/10
CPC分类号： H01L27/115 , H01L2924/0002
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要翻译：一种半导体器件，包括：绝缘栅型晶体管，其具有形成在半导体衬底的主侧上的柱状半导体区域，形成在柱状半导体区域的侧表面上的栅电极，同时插入栅极绝缘膜和分别形成的主电极区域形成在柱状半导体区域的下方; 以及形成在上主电极区域上并且可以被电断开的存储元件。

9. 发明授权

US09335167B2 Apparatus for measuring body size and method of doing the same 有权
标题翻译：用于测量身体尺寸的装置及其做法
公开(公告)号：US09335167B2
公开(公告)日：2016-05-10
申请号：US13881236
申请日：2011-09-21
申请人： Toshiro Fukuda , Toshinobu Shigematsu , Hideki Shimada , Yoshio Nakamura
发明人： Toshiro Fukuda , Toshinobu Shigematsu , Hideki Shimada , Yoshio Nakamura
IPC分类号： H04N15/00 , H04N13/02 , G06T17/00 , G01C11/10 , A61B5/00 , A61B5/107
CPC分类号： G01C11/10 , A61B5/0059 , A61B5/1072 , A61B5/1075 , H04N13/271 , H04N13/275
摘要： Provided is a body measurement device capable of carrying out a body measurement, such as of abdominal girth or chest girth, with a simple configuration which eliminates moving components. In particular, the body measurement device includes computing device that converts two-dimensional coordinates of images of linear light beams included in images having been captured by a plurality of image capturing devices into two-dimensional coordinates on a certain plane in accordance with a relation stored in a database, and computes a peripheral length of a body of a target person within the certain plane.
摘要翻译：提供能够以简单的构造进行身体测量，例如腹围或胸围的身体测量装置，其消除移动部件。具体地，身体测量装置包括计算装置，其将包含在由多个图像捕获装置拍摄的图像中的线性光束的图像的二维坐标根据存储的关系将特定平面上的二维坐标转换为二维坐标并在一个平面内计算目标人物身体的周长。

10. 发明申请

US20110080295A1 FIRE-PREVENTING TERMINAL DEVICE 审中-公开
标题翻译：防火端子装置
公开(公告)号：US20110080295A1
公开(公告)日：2011-04-07
申请号：US12922381
申请日：2009-02-27
申请人： Yoshio Nakamura
发明人： Yoshio Nakamura
IPC分类号： G08B17/12
CPC分类号： G08B7/06 , G08B25/009 , G08B25/10
摘要： To provide a fire-preventing terminal device that can eliminate the need to newly lay a power line and a signal line and can avoid problems caused by battery driving. Display lights 10 provided in a fire-preventing area each include a display unit that transmits fire-preventing information in the fire-preventing area to outside, and an antenna that relays a signal transmitted between fire sensors 1 and receiving relays 2 placed in the fire-preventing area, and transmits a signal wirelessly transmitted from the fire sensors 1 to the receiving relays 2.
摘要翻译：提供可以消除新建电源线和信号线的需要的防火终端装置，并且可以避免由电池驱动引起的问题。设在防火区域的显示灯10分别具有将防火区域内的防火信息发送到外部的显示单元，以及中继在火灾传感器1和放置在火中的接收继电器2之间传输的信号的天线并且将从火灾传感器1无线发送的信号发送到接收继电器2。

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