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1. 发明授权

US08729698B2 Method of manufacturing semiconductor device, semiconductor device and multilayer wafer structure 有权
公开(公告)号：US08729698B2
公开(公告)日：2014-05-20
申请号：US12872966
申请日：2010-08-31
申请人： Tadahiro Morifuji , Haruo Shimamoto , Chuichi Miyazaki , Toshihide Uematsu , Yoshiyuki Abe
发明人： Tadahiro Morifuji , Haruo Shimamoto , Chuichi Miyazaki , Toshihide Uematsu , Yoshiyuki Abe
IPC分类号： H01L23/488
CPC分类号： H01L24/97 , H01L21/561 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L21/78 , H01L23/3128 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L25/50 , H01L2221/68327 , H01L2224/13025 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/81193 , H01L2224/81801 , H01L2224/9202 , H01L2224/95143 , H01L2225/06513 , H01L2225/06541 , H01L2225/06582 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/3011 , H01L2924/00
摘要： Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line.

2. 发明申请

US20110074017A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND MULTILAYER WAFER STRUCTURE 有权
标题翻译：制造半导体器件，半导体器件和多层波长结构的方法
公开(公告)号：US20110074017A1
公开(公告)日：2011-03-31
申请号：US12872966
申请日：2010-08-31
申请人： Tadahiro MORIFUJI , Haruo Shimamoto , Chuichi Miyazaki , Toshihide Uematsu , Yoshiyuki Abe
发明人： Tadahiro MORIFUJI , Haruo Shimamoto , Chuichi Miyazaki , Toshihide Uematsu , Yoshiyuki Abe
IPC分类号： H01L23/488 , H01L21/50
CPC分类号： H01L24/97 , H01L21/561 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L21/78 , H01L23/3128 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L25/50 , H01L2221/68327 , H01L2224/13025 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/81193 , H01L2224/81801 , H01L2224/9202 , H01L2224/95143 , H01L2225/06513 , H01L2225/06541 , H01L2225/06582 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/3011 , H01L2924/00
摘要： Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line.
摘要翻译：沟槽形成在第一和第二半导体晶片的前表面上，每个半导体晶片包括多个半导体芯片的集合体。凹槽各自在设置在半导体芯片之间的切割线上延伸并且具有比切割线更大的宽度。此后，第一和第二半导体晶片被布置成使得其前表面彼此相对，并且用底部填充物密封第一半导体晶片和第二半导体晶片之间的空间。此后，抛光第一和第二半导体晶片的后表面，直到至少露出凹槽，并且在切割线上切割包括第一和第二半导体晶片和底部填充物的结构。

3. 发明授权

US08546244B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08546244B2
公开(公告)日：2013-10-01
申请号：US13346716
申请日：2012-01-09
申请人： Yoshiyuki Abe , Chuichi Miyazaki , Toshihide Uematsu , Haruo Shimamoto
发明人： Yoshiyuki Abe , Chuichi Miyazaki , Toshihide Uematsu , Haruo Shimamoto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/561 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L23/3121 , H01L23/544 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05124 , H01L2224/05554 , H01L2224/0557 , H01L2224/05582 , H01L2224/05644 , H01L2224/05655 , H01L2224/06181 , H01L2224/13022 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/48247 , H01L2224/48644 , H01L2224/48655 , H01L2224/49171 , H01L2224/73204 , H01L2224/73265 , H01L2224/78301 , H01L2224/85181 , H01L2224/85203 , H01L2224/85205 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06558 , H01L2225/06565 , H01L2225/06568 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15183 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/01032 , H01L2924/3512
摘要： A method includes the steps of: (a) fixing a front surface of a wafer (semiconductor wafer) having the front surface, a plurality of chip regions formed on the front surface, a dicing region formed between the chip regions, and a rear surface opposite to the front surface to the supporting member; (b) in a state of having the wafer fixed to the supporting member, grinding the rear surface of the wafer to expose the rear surface; (c) in a state of having the wafer fixed to the supporting member, dividing the wafer into the chip regions; (d) etching side surfaces of the chip regions to remove crushed layers formed in the step (c) on the side surfaces and obtain a plurality of semiconductor chips. After the steps (e) and (d), the plurality of divided chip regions are peeled off from the supporting member to obtain a plurality of semiconductor chips.
摘要翻译：一种方法包括以下步骤：（a）固定具有前表面的晶片（半导体晶片）的前表面，形成在前表面上的多个芯片区域，形成在芯片区域之间的切割区域和后表面与支撑构件的前表面相对; （b）在将晶片固定在支撑构件上的状态下，研磨晶片的后表面以暴露后表面; （c）在将晶片固定在支撑部件上的状态下，将晶片分割成芯片区域; （d）蚀刻芯片区域的侧表面以去除侧表面上的步骤（c）中形成的破碎层，并获得多个半导体芯片。在步骤（e）和（d）之后，将多个分割的芯片区域从支撑构件剥离以获得多个半导体芯片。

4. 发明申请

US20120184068A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120184068A1
公开(公告)日：2012-07-19
申请号：US13346716
申请日：2012-01-09
申请人： Yoshiyuki ABE , Chuichi Miyazaki , Toshihide Uematsu , Haruo Shimamoto
发明人： Yoshiyuki ABE , Chuichi Miyazaki , Toshihide Uematsu , Haruo Shimamoto
IPC分类号： H01L21/50
CPC分类号： H01L21/561 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L23/3121 , H01L23/544 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05124 , H01L2224/05554 , H01L2224/0557 , H01L2224/05582 , H01L2224/05644 , H01L2224/05655 , H01L2224/06181 , H01L2224/13022 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/48247 , H01L2224/48644 , H01L2224/48655 , H01L2224/49171 , H01L2224/73204 , H01L2224/73265 , H01L2224/78301 , H01L2224/85181 , H01L2224/85203 , H01L2224/85205 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06558 , H01L2225/06565 , H01L2225/06568 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15183 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/01032 , H01L2924/3512
摘要： A method includes the steps of: (a) fixing a front surface of a wafer (semiconductor wafer) having the front surface, a plurality of chip regions formed on the front surface, a dicing region formed between the chip regions, and a rear surface opposite to the front surface to the supporting member; (b) in a state of having the wafer fixed to the supporting member, grinding the rear surface of the wafer to expose the rear surface; (c) in a state of having the wafer fixed to the supporting member, dividing the wafer into the chip regions; (d) etching side surfaces of the chip regions to remove crushed layers formed in the step (c) on the side surfaces and obtain a plurality of semiconductor chips. After the steps (e) and (d), the plurality of divided chip regions are peeled off from the supporting member to obtain a plurality of semiconductor chips.
摘要翻译：一种方法包括以下步骤：（a）固定具有前表面的晶片（半导体晶片）的前表面，形成在前表面上的多个芯片区域，形成在芯片区域之间的切割区域和后表面与支撑构件的前表面相对; （b）在将晶片固定在支撑构件上的状态下，研磨晶片的后表面以暴露后表面; （c）在将晶片固定在支撑部件上的状态下，将晶片分割成芯片区域; （d）蚀刻芯片区域的侧表面以去除侧表面上的步骤（c）中形成的破碎层，并获得多个半导体芯片。在步骤（e）和（d）之后，将多个分割的芯片区域从支撑构件剥离以获得多个半导体芯片。

5. 发明申请

US20080286948A1 Fabrication Method of Semiconductor Integrated Circuit Device 失效
标题翻译：半导体集成电路器件制造方法
公开(公告)号：US20080286948A1
公开(公告)日：2008-11-20
申请号：US12170020
申请日：2008-07-09
申请人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
发明人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
IPC分类号： H01L21/00
CPC分类号： H01L21/6835 , H01L21/02238 , H01L21/02255 , H01L21/30625 , H01L21/314 , H01L21/31654 , H01L21/31675 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/6834
摘要： A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.
摘要翻译：一种能够从切割带稳定地释放芯片的技术包括：将压敏粘合带粘附到形成有集成电路的半导体晶片的电路形成表面上，研磨半导体晶片的背面，以实现预定厚度，强制氧化半导体晶片的背面。然后，剥离粘附到半导体晶片的电路形成表面的压敏粘合带，并将切割带粘附到半导体晶片的背面。此外，通过将半导体晶片切割成单独的芯片来分割半导体晶片，然后通过切割带对芯片的背面进行压制，从而从切割带释放芯片。

6. 发明申请

US20050260829A1 Manufacturing method of a semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20050260829A1
公开(公告)日：2005-11-24
申请号：US11119930
申请日：2005-05-03
申请人： Toshihide Uematsu , Chuichi Miyazaki , Yoshiyuki Abe , Minoru Kimura
发明人： Toshihide Uematsu , Chuichi Miyazaki , Yoshiyuki Abe , Minoru Kimura
IPC分类号： H01L21/304 , H01L21/301 , H01L21/46
CPC分类号： H01L21/304 , H01L21/3043
摘要： The reliability of a thin semiconductor device is to be improved. A tape having a ring affixed to an outer periphery thereof is affixed to a main surface of a semiconductor wafer, and, in this state, a back surface of the semiconductor wafer is subjected to grinding and polishing to thin the wafer. Thereafter, the semiconductor wafer is conveyed to a dicing apparatus in a state in which the tape with the ring is affixed to the wafer main surface without peeling of the tape, and dicing is performed from the back surface side of the semiconductor wafer to divide the wafer into individual semiconductor chips. With this method, handling of the thin semiconductor wafer by rear surface processing can be facilitated. Besides, the manufacturing process can be simplified because the replacement of the tape is not needed at the time of shift from rear surface processing to the dicing process.
摘要翻译：要提高薄半导体器件的可靠性。将具有固定在其外周上的环的带固定到半导体晶片的主表面，并且在该状态下，对半导体晶片的背面进行研磨和抛光以使晶片变薄。此后，半导体晶片在没有带剥离的情况下将带有环的带固定到晶片主表面的状态下被输送到切割装置，并且从半导体晶片的背面侧进行切割晶圆成为单个半导体芯片。利用这种方法，可以方便地利用后表面处理来处理薄的半导体晶片。此外，可以简化制造过程，因为在从后表面处理到切割处理的转变时不需要更换带。

7. 发明申请

US20050142815A1 Fabrication method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US20050142815A1
公开(公告)日：2005-06-30
申请号：US11020049
申请日：2004-12-23
申请人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
发明人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
IPC分类号： H01L21/301 , H01L21/304 , H01L21/306 , H01L21/314 , H01L21/316 , H01L21/46 , H01L21/52 , H01L21/60 , H01L21/68 , H01L21/78 , H01L21/82
CPC分类号： H01L21/6835 , H01L21/02238 , H01L21/02255 , H01L21/30625 , H01L21/314 , H01L21/31654 , H01L21/31675 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/6834
摘要： A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.
摘要翻译：一种能够从切割带稳定地释放芯片的技术包括：将压敏粘合带粘附到形成有集成电路的半导体晶片的电路形成表面上，研磨半导体晶片的背面，以实现预定厚度，强制氧化半导体晶片的背面。然后，剥离粘附到半导体晶片的电路形成表面的压敏粘合带，并将切割带粘附到半导体晶片的背面。此外，通过将半导体晶片切割成单独的芯片来分割半导体晶片，然后通过切割带对芯片的背面进行压制，从而从切割带释放芯片。

8. 发明授权

US08378459B2 Semiconductor device, semiconductor wafer and manufacturing method of the same 失效
标题翻译：半导体器件，半导体晶片及其制造方法
公开(公告)号：US08378459B2
公开(公告)日：2013-02-19
申请号：US12795950
申请日：2010-06-08
申请人： Yasuhiro Naka , Naotaka Tanaka , Toshihide Uematsu , Chuichi Miyazaki , Kazunari Suzuki , Yasuyuki Nakajima , Yoshiyuki Abe , Kenji Kohzu , Kosuke Kitaichi , Shinya Ogane
发明人： Yasuhiro Naka , Naotaka Tanaka , Toshihide Uematsu , Chuichi Miyazaki , Kazunari Suzuki , Yasuyuki Nakajima , Yoshiyuki Abe , Kenji Kohzu , Kosuke Kitaichi , Shinya Ogane
IPC分类号： H01L23/544
CPC分类号： H01L24/11 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05571 , H01L2224/05644 , H01L2224/06102 , H01L2224/13022 , H01L2224/13099 , H01L2224/16 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01064 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10158 , H01L2924/1306 , H01L2924/30105 , H01L2924/30107 , H01L2924/00 , H01L2224/05552 , H01L2924/00014
摘要： In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.
摘要翻译：在粘合带附着到半导体晶片的主表面上的状态下，在半导体晶片的后表面上形成沟槽。为了在半导体晶片的后表面中形成沟槽，在半导体晶片的后表面上涂覆抗蚀剂膜之后，通过使用光刻技术对抗蚀剂膜进行构图。进行抗蚀剂膜的图案化，以便不在要形成沟槽的区域中留下抗蚀剂膜。然后，通过使用图案化的抗蚀剂膜作为掩模的干蚀刻技术，在半导体晶片的预定区域中形成沟槽。具体地说，在切割线附近的区域形成沟槽。

9. 发明授权

US07759224B2 Fabrication method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US07759224B2
公开(公告)日：2010-07-20
申请号：US12170020
申请日：2008-07-09
申请人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
发明人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
IPC分类号： H01L21/00
CPC分类号： H01L21/6835 , H01L21/02238 , H01L21/02255 , H01L21/30625 , H01L21/314 , H01L21/31654 , H01L21/31675 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/6834
摘要： A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.
摘要翻译：一种能够从切割带稳定地释放芯片的技术包括：将压敏粘合带粘附到形成有集成电路的半导体晶片的电路形成表面上，研磨半导体晶片的背面，以实现预定厚度，强制氧化半导体晶片的背面。然后，剥离粘附到半导体晶片的电路形成表面的压敏粘合带，并将切割带粘附到半导体晶片的背面。此外，通过将半导体晶片切割成单独的芯片来分割半导体晶片，然后通过切割带对芯片的背面进行压制，从而从切割带释放芯片。

10. 发明授权

US07452787B2 Fabrication method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US07452787B2
公开(公告)日：2008-11-18
申请号：US11020049
申请日：2004-12-23
申请人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
发明人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
IPC分类号： H01L21/00
CPC分类号： H01L21/6835 , H01L21/02238 , H01L21/02255 , H01L21/30625 , H01L21/314 , H01L21/31654 , H01L21/31675 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/6834
摘要： A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.
摘要翻译：一种能够从切割带稳定地释放芯片的技术包括：将压敏粘合带粘附到形成有集成电路的半导体晶片的电路形成表面上，研磨半导体晶片的背面，以实现预定厚度，强制氧化半导体晶片的背面。然后，剥离粘附到半导体晶片的电路形成表面的压敏粘合带，并将切割带粘附到半导体晶片的背面。此外，通过将半导体晶片切割成单独的芯片来分割半导体晶片，然后通过切割带对芯片的背面进行压制，从而从切割带释放芯片。

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