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1. 发明授权

US07504659B2 Thin film transistor and flat panel display device including the same 有权
标题翻译：薄膜晶体管和包括其的平板显示装置
公开(公告)号：US07504659B2
公开(公告)日：2009-03-17
申请号：US11357004
申请日：2006-02-16
申请人： Tack Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Tack Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L29/04
CPC分类号： H01L27/1214 , H01L27/12 , H01L27/283 , H01L29/78681 , H01L51/0545
摘要： A thin film transistor including a stop layer is disclosed. In one embodiment, the thin film transistor includes a substrate, a gate electrode formed on the substrate, a source electrode and a drain electrode insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and having: a channel region which is electrically connected to the source electrode and the drain electrode, and a groove for separating at least the channel region from adjacent thin film transistors, and a stop layer formed below the semiconductor layer. According to one embodiment of the invention, a semiconductor layer can be easily patterned without using a dry or wet etching technique such as photolithography.
摘要翻译：公开了一种包括停止层的薄膜晶体管。在一个实施例中，薄膜晶体管包括衬底，形成在衬底上的栅电极，与栅电极绝缘的源电极和漏电极，与栅电极绝缘的半导体层，具有：电极连接到源电极和漏电极，以及用于至少从相邻薄膜晶体管分离沟道区的沟槽和形成在半导体层下面的阻挡层。根据本发明的一个实施例，半导体层可以容易地图案化，而不使用诸如光刻的干法或湿蚀刻技术。

2. 发明授权

US08710502B2 Thin film transistor and flat panel display device including the same 有权
标题翻译：薄膜晶体管和包括其的平板显示装置
公开(公告)号：US08710502B2
公开(公告)日：2014-04-29
申请号：US12365090
申请日：2009-02-03
申请人： Tack Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Tack Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L29/786
CPC分类号： H01L27/1214 , H01L27/12 , H01L27/283 , H01L29/78681 , H01L51/0545
摘要： A flat panel display device is disclosed. In one embodiment, the flat panel display device includes i) a semiconductor layer including a channel region and a groove, wherein the channel region electrically connects a source electrode and a drain electrode, and the groove is configured to separate the channel region from adjacent thin film transistors and ii) a stop layer formed below at least a portion of the semiconductor layer. According to one embodiment of the invention, a semiconductor layer can be easily patterned without using a dry or wet etching technique such as photolithography.
摘要翻译：公开了一种平板显示装置。在一个实施例中，平板显示装置包括i）包括沟道区域和沟槽的半导体层，其中沟道区域电连接源电极和漏电极，并且沟槽被配置为将沟道区域与相邻薄层薄膜晶体管和ii）形成在半导体层的至少一部分下方的停止层。根据本发明的一个实施例，半导体层可以容易地图案化，而不使用诸如光刻的干法或湿蚀刻技术。

3. 发明申请

US20090140254A1 THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：薄膜晶体管和平板显示装置，包括它们
公开(公告)号：US20090140254A1
公开(公告)日：2009-06-04
申请号：US12365090
申请日：2009-02-03
申请人： Tack Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Tack Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L33/00
CPC分类号： H01L27/1214 , H01L27/12 , H01L27/283 , H01L29/78681 , H01L51/0545
摘要： A flat panel display device is disclosed. In one embodiment, the flat panel display device includes i) a semiconductor layer including a channel region and a groove, wherein the channel region electrically connects a source electrode and a drain electrode, and the groove is configured to separate the channel region from adjacent thin film transistors and ii) a stop layer formed below at least a portion of the semiconductor layer. According to one embodiment of the invention, a semiconductor layer can be easily patterned without using a dry or wet etching technique such as photolithography.
摘要翻译：公开了一种平板显示装置。在一个实施例中，平板显示装置包括i）包括沟道区域和沟槽的半导体层，其中沟道区域电连接源电极和漏电极，并且沟槽被配置为将沟道区域与相邻薄层薄膜晶体管和ii）形成在半导体层的至少一部分下方的停止层。根据本发明的一个实施例，半导体层可以容易地图案化，而不使用诸如光刻的干法或湿蚀刻技术。

4. 发明申请

US20060186410A1 Thin film transistor and flat panel display device including the same 有权
公开(公告)号：US20060186410A1
公开(公告)日：2006-08-24
申请号：US11357004
申请日：2006-02-16
申请人： Tack Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Tack Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L27/1214 , H01L27/12 , H01L27/283 , H01L29/78681 , H01L51/0545
摘要： A thin film transistor including a stop layer is disclosed. In one embodiment, the thin film transistor includes a substrate, a gate electrode formed on the substrate, a source electrode and a drain electrode insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and having: a channel region which is electrically connected to the source electrode and the drain electrode, and a groove for separating at least the channel region from adjacent thin film transistors, and a stop layer formed below the semiconductor layer. According to one embodiment of the invention, a semiconductor layer can be easily patterned without using a dry or wet etching technique such as photolithography.

5. 发明授权

US07714321B2 Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor 有权
标题翻译：有机薄膜晶体管，包括该薄膜晶体管的平面显示装置以及有机薄膜晶体管的制造方法
公开(公告)号：US07714321B2
公开(公告)日：2010-05-11
申请号：US11378011
申请日：2006-03-17
申请人： Sung-Jin Kim , Jae-Bon Koo , Min-Chul Suh
发明人： Sung-Jin Kim , Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0003 , H01L51/0545
摘要： An organic thin film transistor, a flat display device including the same, and a method of manufacturing the organic thin film transistor are disclosed. In one embodiment, the organic thin film transistor includes: i) a substrate, ii) a gate electrode disposed on the substrate, iii) a gate insulation film disposed on the gate electrode, iv) a source electrode and a drain electrode spaced from each other and disposed on the gate insulation film, v) an organic semiconductor layer contacting the source electrode and the drain electrode and having an edge to be distinguished from an adjacent organic thin film transistor, and vi) a cantilever layer disposed to cover the organic semiconductor layer, contacting a portion of a layer which is disposed in or under the organic semiconductor layer, and is exposed to the outside of the edge of the organic semiconductor layer. According to one embodiment, a patterning effect of an organic semiconductor layer is easily obtained and characteristics such as an on/off ratio are improved.
摘要翻译：公开了一种有机薄膜晶体管，包括该有机薄膜晶体管的平面显示装置和制造该有机薄膜晶体管的方法。在一个实施例中，有机薄膜晶体管包括：i）衬底，ii）设置在衬底上的栅电极，iii）设置在栅电极上的栅极绝缘膜，iv）与每个间隔开的源电极和漏电极 v）与源电极和漏极接触的有机半导体层，并且具有与相邻的有机薄膜晶体管不同的边缘，以及vi）设置成覆盖有机半导体的悬臂层接触设置在有机半导体层中或其下方的层的一部分，并且暴露于有机半导体层的边缘的外侧。根据一个实施例，容易获得有机半导体层的图案化效果，并且提高诸如开/关比的特性。

6. 发明授权

US07671359B2 Thin film transistor, a method for preparing the same and a flat panel display employing the same 有权
标题翻译：薄膜晶体管，其制备方法和采用该薄膜晶体管的平板显示器
公开(公告)号：US07671359B2
公开(公告)日：2010-03-02
申请号：US11329865
申请日：2006-01-09
申请人： Min-Chul Suh , Myeong-Seob So , Jae-Bon Koo , Nam-Choul Yang
发明人： Min-Chul Suh , Myeong-Seob So , Jae-Bon Koo , Nam-Choul Yang
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0062 , H01L51/0078 , H01L51/0541 , H01L51/0583
摘要： Provided are a thin film transistor, a method for preparing the same and a flat panel display employing the same. The thin film transistor includes a gate electrode, source and drain electrodes insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes, an insulating layer, and a carrier blocking layer interposed between the semiconductor layer and the insulating layer and preventing electrons or holes moving through semiconductor layer from being trapped in the insulating layer. Since the thin film transistor is constructed such that the carrier blocking layer is interposed between the semiconductor layer and the insulating layer, the electrons or holes injected into the semiconductor layer can be prevented from being trapped in the insulating layer, thereby suppressing hysteresis characteristic. In addition, a reliable flat panel display device can be manufactured using the thin film transistor.
摘要翻译：提供薄膜晶体管，其制备方法和采用该薄膜晶体管的平板显示器。薄膜晶体管包括栅电极，与栅电极绝缘的源电极和漏电极，与栅电极绝缘并电连接到源极和漏极的半导体层，绝缘层和插入在半导体之间的载流子阻挡层层和绝缘层，并且防止移动通过半导体层的电子或空穴被捕获在绝缘层中。由于薄膜晶体管被构造为使得载流子阻挡层插入在半导体层和绝缘层之间，因此可以防止注入到半导体层中的电子或空穴被捕获在绝缘层中，从而抑制滞后特性。此外，可以使用薄膜晶体管制造可靠的平板显示装置。

7. 发明申请

US20090272969A1 METHOD OF PATTERNING AN ORGANIC THIN FILM, AN ORGANIC THIN FILM TRANSISTOR, A METHOD OF MANUFACTURING AN ORGANIC THIN FILM TRANSISTOR, AND AN ORGANIC ELECTROLUMINESCENE DISPLAY DEVICE HAVING THE ORGANIC THIN FILM TRANSISTOR 有权
标题翻译：有机薄膜的形成方法，有机薄膜晶体管，有机薄膜晶体管的制造方法和有机薄膜晶体管的有机电致发光显示器件
公开(公告)号：US20090272969A1
公开(公告)日：2009-11-05
申请号：US12504312
申请日：2009-07-16
申请人： Min-Chul Suh , Jae-Bon Koo
发明人： Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0017 , H01L27/283 , H01L27/3244 , H01L51/0019 , H01L51/0541 , H01L51/0545 , Y10T428/31504
摘要： Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and can prevent surface damage of the organic semiconductor layer and a method of manufacturing the organic thin film transistor, and an organic electroluminescence display device having the organic thin film transistor are provided. The method of patterning the organic thin film includes forming the organic thin film on a substrate, selectively printing a mask material on a portion of the organic thin film, dry etching an exposed portion of the organic thin film using the mask material, and removing the mask material.
摘要翻译：提供了可以防止有机半导体层的表面损伤的有机薄膜图案化的方法。此外，提供了可以减少截止电流并且可以防止有机半导体层的表面损伤的有机薄膜晶体管和有机薄膜晶体管的制造方法，以及具有有机薄膜晶体管的有机电致发光显示装置。图案化有机薄膜的方法包括在基板上形成有机薄膜，在有机薄膜的一部分上选择性地印刷掩模材料，使用掩模材料干燥蚀刻有机薄膜的暴露部分，面具材料。

8. 发明授权

US07582894B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US07582894B2
公开(公告)日：2009-09-01
申请号：US11280105
申请日：2005-11-15
申请人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn
发明人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L27/283 , H01L51/0003 , H01L51/0021 , H01L51/0096 , H01L51/0516 , H01L51/0541 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： Organic TFTs having uniform characteristics and a flat panel display having the organic TFT, wherein the organic TFTs include an organic semiconductor layer formed by spin coating are disclosed. One embodiment of the organic TFT includes: a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, an organic semiconductor layer disposed on the gate insulating film, and a source electrode and a drain electrode that contact the organic semiconductor layer, wherein a plurality of protrusion parts is formed on the gate insulating film and the protrusion parts extend toward the drain electrode from the source electrode.
摘要翻译：公开了具有均匀特性的有机TFT和具有有机TFT的平板显示器，其中有机TFT包括通过旋涂形成的有机半导体层。有机TFT的一个实施例包括：基板，设置在基板上的栅电极，覆盖栅电极的栅极绝缘膜，设置在栅极绝缘膜上的有机半导体层，以及与栅极绝缘膜接触的源电极和漏电极有机半导体层，其中在所述栅极绝缘膜上形成有多个突出部，并且所述突出部从所述源极延伸到所述漏电极。

9. 发明授权

US07550766B2 Thin film transistor (TFT) and flat panel display including the TFT 有权
标题翻译：薄膜晶体管（TFT）和平板显示器，包括TFT
公开(公告)号：US07550766B2
公开(公告)日：2009-06-23
申请号：US11403011
申请日：2006-04-13
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L31/00
CPC分类号： H01L51/0545 , H01L27/1214 , H01L27/283 , H01L29/78651 , H01L29/78681 , H01L51/0017
摘要： A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT. Each groove passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes, and a projection image generated when each groove that passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes is projected onto the source and drain electrodes covers the source and drain electrodes except for a portion of the source electrode that faces the drain electrode and a portion of the drain electrode that faces the source electrode.
摘要翻译：可以减少泄漏电流并可以防止相邻TFT之间的串扰的薄膜晶体管（TFT）包括：衬底; 设置在所述基板上的栅电极; 源电极和漏极彼此分离并与栅电极绝缘; 以及与栅电极绝缘的半导体层，与源极和漏极中的每一个接触，并且具有将源极和漏极之间的半导体层的至少一部分区域与相邻的TFT分开的沟槽。每个凹槽通过对应于源极和漏极的半导体层的至少一部分，以及当将通过与源极和漏极对应的半导体层的至少一部分的每个沟槽投影到源极上时产生的投影图像，漏电极覆盖源电极和漏电极，除了源电极的面对漏电极的一部分和面对源电极的部分漏电极。

10. 发明授权

US07538480B2 Organic thin film transistor and flat panel display device including the same 有权
标题翻译：有机薄膜晶体管和包括其的平板显示装置
公开(公告)号：US07538480B2
公开(公告)日：2009-05-26
申请号：US11196241
申请日：2005-08-04
申请人： Jae-Bon Koo , Min-Chul Suh , Kyong-Do Kim , Yeon-Gon Mo
发明人： Jae-Bon Koo , Min-Chul Suh , Kyong-Do Kim , Yeon-Gon Mo
IPC分类号： H01J19/00 , H05B33/00
CPC分类号： H01L51/0516
摘要： Provided are an organic thin film transistor (TFT), which can prevent deformation or separation due to mechanical stress, and a flat panel display device including the organic TFT. The organic TFT includes a gate electrode; a source electrode and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode, and contacting the source electrode and the drain electrodes; and a gate insulating layer insulating the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer. The gate insulating layer may be patterned in an island shape to permit adjacent portions of the substrate to flex freely, thereby reducing stress and deformation of the organic TFT and its component layers.
摘要翻译：提供一种有机薄膜晶体管（TFT），其可以防止由机械应力引起的变形或分离，以及包括有机TFT的平板显示装置。有机TFT包括栅电极; 源电极和与电极绝缘的漏电极; 与栅电极绝缘的有机半导体层，并与源电极和漏电极接触; 以及将栅电极与源电极，漏电极和有机半导体层绝缘的栅极绝缘层。栅极绝缘层可以被图案化为岛状，以允许基板的相邻部分自由地弯曲，从而减少有机TFT及其部件层的应力和变形。

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