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1. 发明授权

US07582894B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US07582894B2
公开(公告)日：2009-09-01
申请号：US11280105
申请日：2005-11-15
申请人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn
发明人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L27/283 , H01L51/0003 , H01L51/0021 , H01L51/0096 , H01L51/0516 , H01L51/0541 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： Organic TFTs having uniform characteristics and a flat panel display having the organic TFT, wherein the organic TFTs include an organic semiconductor layer formed by spin coating are disclosed. One embodiment of the organic TFT includes: a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, an organic semiconductor layer disposed on the gate insulating film, and a source electrode and a drain electrode that contact the organic semiconductor layer, wherein a plurality of protrusion parts is formed on the gate insulating film and the protrusion parts extend toward the drain electrode from the source electrode.
摘要翻译：公开了具有均匀特性的有机TFT和具有有机TFT的平板显示器，其中有机TFT包括通过旋涂形成的有机半导体层。有机TFT的一个实施例包括：基板，设置在基板上的栅电极，覆盖栅电极的栅极绝缘膜，设置在栅极绝缘膜上的有机半导体层，以及与栅极绝缘膜接触的源电极和漏电极有机半导体层，其中在所述栅极绝缘膜上形成有多个突出部，并且所述突出部从所述源极延伸到所述漏电极。

2. 发明授权

US07550766B2 Thin film transistor (TFT) and flat panel display including the TFT 有权
标题翻译：薄膜晶体管（TFT）和平板显示器，包括TFT
公开(公告)号：US07550766B2
公开(公告)日：2009-06-23
申请号：US11403011
申请日：2006-04-13
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L31/00
CPC分类号： H01L51/0545 , H01L27/1214 , H01L27/283 , H01L29/78651 , H01L29/78681 , H01L51/0017
摘要： A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT. Each groove passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes, and a projection image generated when each groove that passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes is projected onto the source and drain electrodes covers the source and drain electrodes except for a portion of the source electrode that faces the drain electrode and a portion of the drain electrode that faces the source electrode.
摘要翻译：可以减少泄漏电流并可以防止相邻TFT之间的串扰的薄膜晶体管（TFT）包括：衬底; 设置在所述基板上的栅电极; 源电极和漏极彼此分离并与栅电极绝缘; 以及与栅电极绝缘的半导体层，与源极和漏极中的每一个接触，并且具有将源极和漏极之间的半导体层的至少一部分区域与相邻的TFT分开的沟槽。每个凹槽通过对应于源极和漏极的半导体层的至少一部分，以及当将通过与源极和漏极对应的半导体层的至少一部分的每个沟槽投影到源极上时产生的投影图像，漏电极覆盖源电极和漏电极，除了源电极的面对漏电极的一部分和面对源电极的部分漏电极。

3. 发明授权

US07485576B2 Method of forming conductive pattern, thin film transistor, and method of manufacturing the same 有权
标题翻译：形成导电图案的方法，薄膜晶体管及其制造方法
公开(公告)号：US07485576B2
公开(公告)日：2009-02-03
申请号：US11296874
申请日：2005-12-08
申请人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn , Hye-Dong Kim , Fischer Joerg , Werner Humbs
发明人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn , Hye-Dong Kim , Fischer Joerg , Werner Humbs
IPC分类号： H01L21/44
CPC分类号： H01L51/0022 , B82Y10/00 , B82Y30/00 , H01L21/31691 , H01L51/0005 , H01L51/0021 , H01L51/0023 , H01L51/0097 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/102 , Y02E10/549 , Y02P70/521
摘要： A method of forming a conductive pattern in which the conductive pattern can be easily formed at a low temperature without a photolithography process by forming the conductive pattern using a laser ablation method and an inkjet method, an organic thin film transistor manufactured using the method, and a method of manufacturing the organic thin film transistor. The method of forming a conductive pattern in a flat panel display device includes preparing a base member, forming a groove having the same shape as the conductive pattern in the base member, and forming the conductive pattern by applying a conductive material into the groove. The base member has one of a structure including a plastic substrate having the groove and a structure including a substrate and an insulating layer which is arranged on the substrate and which has the groove.
摘要翻译：一种形成导电图案的方法，其中通过使用激光烧蚀法和喷墨法形成导电图案，使用该方法制造的有机薄膜晶体管可以在没有光刻工艺的低温下容易地形成导电图案，使用该方法制造的有机薄膜晶体管，以及制造有机薄膜晶体管的方法。在平板显示装置中形成导电图案的方法包括制备基底构件，在基底构件中形成具有与导电图案相同形状的凹槽，并且通过将导电材料施加到凹槽中来形成导电图案。所述基座构件具有包括具有所述凹槽的塑料基板和包括基板和绝缘层的结构的结构之一，所述结构布置在所述基板上并具有所述凹槽。

4. 发明申请

US20060102896A1 Organic thin film transistor 有权
公开(公告)号：US20060102896A1
公开(公告)日：2006-05-18
申请号：US11280105
申请日：2005-11-15
申请人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn
发明人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn
IPC分类号： H01L29/08
CPC分类号： H01L27/283 , H01L51/0003 , H01L51/0021 , H01L51/0096 , H01L51/0516 , H01L51/0541 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： Organic TFTs having uniform characteristics and a flat panel display having the organic TFT, wherein the organic TFTs include an organic semiconductor layer formed by spin coating are disclosed. One embodiment of the organic TFT includes: a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, an organic semiconductor layer disposed on the gate insulating film, and a source electrode and a drain electrode that contact the organic semiconductor layer, wherein a plurality of protrusion parts is formed on the gate insulating film and the protrusion parts extend toward the drain electrode from the source electrode.

5. 发明申请

US20060097254A1 Organic thin-film transistor, method of fabricating the same, and flat panel display having the same 有权
公开(公告)号：US20060097254A1
公开(公告)日：2006-05-11
申请号：US11150179
申请日：2005-06-13
申请人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
发明人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L31/0376
CPC分类号： H01L51/0541 , H01L27/3244
摘要： The present invention relates to an organic thin film transistor (OTFT), a method of fabricating the OTFT, and an organic electroluminescent display that has the OTFTs. The invention prevents surface damage of an organic semiconductor layer and reduces an off-current. The OTFT includes a substrate, a source electrode and a drain electrode formed on the substrate, and a semiconductor layer formed on the substrate that has a channel layer disposed over and between the source electrode and drain electrode. In addition, the OTFT includes a gate insulating layer formed on the semiconductor layer, a separation pattern formed through the semiconductor layer and the gate insulating layer to separate the channel layer, and a gate electrode formed on the gate insulating layer over the channel layer.

6. 发明授权

US07645812B2 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US07645812B2
公开(公告)日：2010-01-12
申请号：US11339657
申请日：2006-01-26
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： A61K6/083
CPC分类号： H01L51/0038 , H01L51/0094 , H01L51/0541
摘要： A poly(para-phenylenevinylene) (PPV) compound for forming a buffer layer of a thin film transistor represented by where R is a C1-C20 silyl group substituted with cyclohexyl or phenyl, m is an integer from 2 to 4, and n is an integer from 1 to 3,000; a composition for forming a buffer layer of a thin film transistor that is used to form the compound represented by formula 1 and includes a halo precursor polymer, a photobase generator, and a solvent; a thin film transistor including a buffer layer which is manufactured using the PPV compound; and a flat panel display including the thin film transistor. A patterned buffer layer can be formed under an organic semiconductor layer of an organic TFT by photolithography patterning using the silicon-containing PPV precursor. Accordingly, the alignment of the organic semiconductor layer of the organic TFT can be improved, and thereby, the characteristics of the organic TFT can be improved.
摘要翻译：用于形成薄膜晶体管缓冲层的聚（对亚苯基亚乙烯基）（PPV））化合物，其中R为被环己基或苯基取代的C 1 -C 20甲硅烷基，m为2至4的整数，n为 1到3000的整数; 用于形成薄膜晶体管的缓冲层的组合物，其用于形成由式1表示的化合物，并且包括卤素前体聚合物，光碱产生剂和溶剂; 包括使用所述PPV化合物制造的缓冲层的薄膜晶体管; 以及包括薄膜晶体管的平板显示器。可以通过使用含硅PPV前体的光刻图案在有机TFT的有机半导体层下形成图案化缓冲层。因此，可以提高有机TFT的有机半导体层的对准，从而可以提高有机TFT的特性。

7. 发明申请

US20060169974A1 Thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的平板显示装置
公开(公告)号：US20060169974A1
公开(公告)日：2006-08-03
申请号：US11338089
申请日：2006-01-24
申请人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
发明人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L27/3244 , H01L51/0541 , H01L51/0562
摘要： Provided are a thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and a channel formation-promoting layer that contacts an opposite region of a channel region of the organic semiconductor layer, and contains a compound having a functional group, which fixes electric charges moving toward the opposite region of the channel region to the opposite region of the channel region. Thus, the thin film transistor has a low threshold voltage and excellent electric charge mobility.
摘要翻译：提供一种薄膜晶体管，其制造方法和包括该薄膜晶体管的平板显示装置。薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及沟道形成促进层，其与有机半导体层的沟道区域的相反区域接触，并且包含具有官能团的化合物，其将朝向沟道区域的相对区域移动的电荷固定到渠道区域。因此，薄膜晶体管具有低阈值电压和优异的电荷迁移率。

8. 发明授权

US08318533B2 Method of manufacturing an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US08318533B2
公开(公告)日：2012-11-27
申请号：US12662192
申请日：2010-04-05
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
IPC分类号： H01L51/40 , H01L21/00 , H01L21/44
CPC分类号： B82Y30/00 , H01L51/0036 , H01L51/0037 , H01L51/0052 , H01L51/0078 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.
摘要翻译：具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。还提供了使用有机薄膜晶体管的平板显示装置。有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层和源电极或有机半导体层和漏电极。

9. 发明申请

US20100197085A1 Method of manufacturing an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US20100197085A1
公开(公告)日：2010-08-05
申请号：US12662192
申请日：2010-04-05
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
IPC分类号： H01L51/40
CPC分类号： B82Y30/00 , H01L51/0036 , H01L51/0037 , H01L51/0052 , H01L51/0078 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.
摘要翻译：具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。还提供了使用有机薄膜晶体管的平板显示装置。有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层和源电极或有机半导体层和漏电极。

10. 发明申请

US20060172149A1 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US20060172149A1
公开(公告)日：2006-08-03
申请号：US11339657
申请日：2006-01-26
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： B32B19/00
CPC分类号： H01L51/0038 , H01L51/0094 , H01L51/0541
摘要： A poly(para-phenylenevinylene) (PPV) compound for forming a buffer layer of a thin film transistor represented by where R is a C1-C20 silyl group substituted with cyclohexyl or phenyl, m is an integer from 2 to 4, and n is an integer from 1 to 3,000; a composition for forming a buffer layer of a thin film transistor that is used to form the compound represented by formula 1 and includes a halo precursor polymer, a photobase generator, and a solvent; a thin film transistor including a buffer layer which is manufactured using the PPV compound; and a flat panel display including the thin film transistor. A patterned buffer layer can be formed under an organic semiconductor layer of an organic TFT by photolithography patterning using the silicon-containing PPV precursor. Accordingly, the alignment of the organic semiconductor layer of the organic TFT can be improved, and thereby, the characteristics of the organic TFT can be improved.
摘要翻译：用于形成薄膜晶体管缓冲层的聚（对亚苯基亚乙烯基）（PPV））化合物，其中R为被环己基或苯基取代的C 1 -C 20甲硅烷基，m为2至4的整数，n为 1到3000的整数; 用于形成薄膜晶体管的缓冲层的组合物，其用于形成由式1表示的化合物，并且包括卤素前体聚合物，光碱产生剂和溶剂; 包括使用所述PPV化合物制造的缓冲层的薄膜晶体管; 以及包括薄膜晶体管的平板显示器。可以通过使用含硅PPV前体的光刻图案在有机TFT的有机半导体层下形成图案化缓冲层。因此，可以提高有机TFT的有机半导体层的对准，从而可以提高有机TFT的特性。

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