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1. 发明申请

US20220307128A1 METHOD FOR FORMING SILICON FILM AND PROCESSING APPARATUS 有权
公开(公告)号：US20220307128A1
公开(公告)日：2022-09-29
申请号：US17654139
申请日：2022-03-09
申请人： Tokyo Electron Limited
发明人： Akari MATSUNAGA , Yutaka MOTOYAMA , Satoshi TAKAGI
IPC分类号： C23C16/24 , C23C16/52 , C23C16/455 , H01L21/02
摘要： A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

2. 发明申请

US20200161130A1 METHOD OF FORMING POLYSILICON FILM AND FILM FORMING APPARATUS 审中-公开
公开(公告)号：US20200161130A1
公开(公告)日：2020-05-21
申请号：US16685627
申请日：2019-11-15
申请人： TOKYO ELECTRON LIMITED
发明人： Yutaka MOTOYAMA , Atsushi ENDO
IPC分类号： H01L21/02 , H01L21/306 , H01L21/67 , C23C16/52 , C23C16/24 , C23C16/06
摘要： There is provided a method of forming a polysilicon film, which includes: forming an amorphous silicon film on a substrate; forming a cap layer, which is formed of an amorphous germanium film or an amorphous silicon germanium film, on the amorphous silicon film; forming crystal nuclei of a silicon in the amorphous silicon film by heating the substrate at a first temperature; removing the cap layer after the crystal nuclei are formed; and growing the crystal nuclei by heating the substrate from which the cap layer is removed, at a second temperature equal to or higher than the first temperature.

3. 发明申请

US20150376789A1 VERTICAL HEAT TREATMENT APPARATUS AND METHOD OF OPERATING VERTICAL HEAT TREATMENT APPARATUS 审中-公开
标题翻译：立式热处理装置及其操作方法
公开(公告)号：US20150376789A1
公开(公告)日：2015-12-31
申请号：US14845673
申请日：2015-09-04
申请人： TOKYO ELECTRON LIMITED
发明人： Yutaka MOTOYAMA , Kohei FUKUSHIMA , Masanobu MATSUNAGA , Keiji TABUKI , Yamato TONEGAWA
IPC分类号： C23C16/455 , H01L21/02 , C23C16/458
CPC分类号： C23C16/45587 , C23C16/345 , C23C16/45542 , C23C16/45578 , C23C16/4581 , C23C16/4583 , C23C16/46 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： A vertical heat treatment apparatus includes: a gas supply part that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members arranged above and below a region in which target substrates are disposed. The gas distribution adjusting members include a first plate-shaped member with convex and concave portions and a second plate-shaped member with convex and concave portions, the first plate-shaped member and the second plate-shaped member being arranged above and below each other, and the first plate-shaped member and the second plate-shaped member being arranged above a bottom plate of a substrate holding and supporting part and below a ceiling plate of a substrate holding and supporting part. The first plate-shaped member has a first surface area and the second plate-shaped member has a second surface area different from the first surface area.
摘要翻译：一种立式热处理装置包括：将成膜气体供给到反应室内的气体供给部; 以及气体分配调节构件，其布置在目标基板的区域的上方和下方。气体分配调节构件包括具有凸凹部的第一板状构件和具有凸部和凹部的第二板状构件，第一板状构件和第二板状构件彼此上下配置并且第一板状构件和第二板状构件布置在基板保持支撑部的底板的上方和基板保持支撑部的顶板的下方。第一板状构件具有第一表面区域，第二板状构件具有与第一表面区域不同的第二表面区域。

4. 发明申请

US20220148893A1 HEAT TREATMENT APPARATUS AND DUMMY SUBSTRATE PROCESSING METHOD 有权
公开(公告)号：US20220148893A1
公开(公告)日：2022-05-12
申请号：US17450327
申请日：2021-10-08
申请人： Tokyo Electron Limited
发明人： Yutaka MOTOYAMA , Yoshihiro TAKEZAWA
IPC分类号： H01L21/67 , H01L21/02 , H01L21/677
摘要： A heat treatment apparatus for applying a heat treatment to a plurality of substrates including a product substrate and a dummy substrate includes: a process container configured to accommodate the plurality of substrates; a storage container provided outside the process container and configured to store the dummy substrate; and an oxidation mechanism configured to oxidize the dummy substrate stored in the storage container.

5. 发明申请

US20190144994A1 CLEANING METHOD AND FILM FORMING METHOD 审中-公开
公开(公告)号：US20190144994A1
公开(公告)日：2019-05-16
申请号：US16186921
申请日：2018-11-12
申请人： TOKYO ELECTRON LIMITED
发明人： Mitsuhiro OKADA , Yutaka MOTOYAMA
IPC分类号： C23C16/44
摘要： There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.

6. 发明申请

US20160024654A1 Film Forming Apparatus 审中-公开
标题翻译：成膜装置
公开(公告)号：US20160024654A1
公开(公告)日：2016-01-28
申请号：US14809837
申请日：2015-07-27
申请人： TOKYO ELECTRON LIMITED
发明人： Kohei FUKUSHIMA , Yutaka MOTOYAMA , Pao-Hwa CHOU
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/4583 , C23C16/345 , C23C16/45542 , C23C16/45544
摘要： A film forming apparatus includes a first and second source gas suppliers configured to limitedly supply a source gas only to a first and second substrate areas, respectively, a reaction gas supplier configured to supply a reaction gas to the first substrate area and the second substrate area, a purge gas supplier configured to supply a purge gas for preventing the source gas supplied to one of the first and second substrate areas from being supplied to the other substrate area, a division-purpose substrate held between the first and second substrate areas in a substrate holding part, and a control part configured to output a control signal such that a first cycle including supplying the source gas and the reaction gas to the first substrate area and a second cycle including supplying the source gas and the reaction gas to the second substrate area are each performed plural times.
摘要翻译：一种成膜设备包括：第一和第二源气体供应器，其分别被配置为仅将源气体仅分别供应到第一和第二基底区域;反应气体供应器，被配置为将反应气体供应到第一基底区域和第二基底区域提供一种净化气体供给器，被配置为提供用于防止供应到第一和第二基板区域中的一个的源气体的吹扫气体被供应到另一个基板区域，分隔用基板被保持在第一和第二基板区域之间基板保持部，以及控制部，其配置为输出控制信号，使得包括将源气体和反应气体供应到第一基板区域的第一循环和包括将源气体和反应气体供应到第二基板的第二循环区域分别进行多次。

7. 发明申请

US20150259799A1 VERTICAL HEAT TREATMENT APPARATUS, METHOD OF OPERATING VERTICAL HEAT TREATMENT APPARATUS, AND STORAGE MEDIUM 审中-公开
标题翻译：垂直热处理设备，垂直加热处理设备的操作方法和存储介质
公开(公告)号：US20150259799A1
公开(公告)日：2015-09-17
申请号：US14642230
申请日：2015-03-09
申请人： TOKYO ELECTRON LIMITED
发明人： Yutaka MOTOYAMA , Kohei FUKUSHIMA , Masanobu MATSUNAGA , Pao-Hwa CHOU
IPC分类号： C23C16/46 , C23C16/458 , H01L21/02 , C23C16/455
CPC分类号： C23C16/46 , C23C16/345 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： A vertical heat treatment apparatus for performing a film forming treatment on a plurality of target substrates having a surface with convex and concave portions includes: a gas supply unit that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members made of quartz and installed to be positioned respectively above and below a region in which the plurality of target substrates held and supported by a substrate holding and supporting unit are disposed, wherein if S is a surface area per unit region of the gas distribution adjusting members and S0 is a surface area per unit region obtained by dividing a surface area of the target substrate by a surface area calculated based on an external dimension of the target substrate, a value obtained by dividing S by S0 (S/S0) is set to be 0.8 or more.
摘要翻译：在具有凸凹部的表面的多个目标基板上进行成膜处理的立式热处理装置包括：将成膜气体供给到反应室内的气体供给部，和由石英制成的气体分配调节构件，并且被设置为分别位于由基板保持和支撑单元保持和支撑的多个目标基板的上方和下方，其中如果S是每单位区域的表面积气体分布调整部件S0是通过将目标基板的表面积除以基于目标基板的外部尺寸计算出的面积而得到的每单位区域的表面积，将S除以S0（S / S0）设定为0.8以上。

8. 发明申请

US20220384184A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20220384184A1
公开(公告)日：2022-12-01
申请号：US17804170
申请日：2022-05-26
申请人： Tokyo Electron Limited
发明人： Yutaka MOTOYAMA , Atsushi ENDO
IPC分类号： H01L21/02 , C23C16/458
摘要： A method for manufacturing a semiconductor device includes supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess, supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess, supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess, and additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas.

9. 发明申请

US20210202248A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
公开(公告)号：US20210202248A1
公开(公告)日：2021-07-01
申请号：US17132656
申请日：2020-12-23
申请人： Tokyo Electron Limited
发明人： Yoshihiro TAKEZAWA , Daisuke SUZUKI , Hiroyuki HAYASHI , Yutaka MOTOYAMA
IPC分类号： H01L21/02
摘要： A film forming method includes: forming a laminated film, in which an interface layer, a bulk layer, and a surface layer are laminated in this order, on a base; and crystallizing the laminated film, wherein the bulk layer is formed of a film that is easier to crystallize than the interface layer in crystallizing the laminated film, and wherein the surface layer is formed of a film that is easier to crystallize than the bulk layer in crystallizing the laminated film.

10. 发明申请

US20150267293A1 OPERATING METHOD OF VERTICAL HEAT TREATMENT APPARATUS, STORAGE MEDIUM, AND VERTICAL HEAT TREATMENT APPARATUS 有权
标题翻译：垂直加热处理设备，储存介质和垂直热处理设备的操作方法
公开(公告)号：US20150267293A1
公开(公告)日：2015-09-24
申请号：US14664986
申请日：2015-03-23
申请人： TOKYO ELECTRON LIMITED
发明人： Yutaka MOTOYAMA , Kohei FUKUSHIMA , Keisuke SUZUKI , Hiromi TAKAHASHI
IPC分类号： C23C16/44 , C23C16/458 , C23C16/455 , C23C16/46
CPC分类号： C23C16/4411 , C23C16/4401 , C23C16/45546 , C23C16/46
摘要： An operating method of a vertical heat treatment apparatus which performs a film forming process by keeping the interior of a vertical reaction tube surrounded by a heating mechanism at a vacuum atmosphere and by supplying film forming gases to substrates accommodated within the reaction tube, includes: performing a film forming process with respect to the substrates by carrying a substrate holder holding a plurality of substrates in a shelf form into the reaction tube; carrying out the substrate holder from the reaction tube; and carrying a cooling jig into the reaction tube to cool an inner wall of the reaction tube so as to peel a thin film adhering to the inner wall of the reaction tube by a thermal stress and so as to collect the thin film in the cooling jig by thermophoresis.
摘要翻译：一种垂直热处理装置的操作方法，其通过将由加热机构包围的垂直反应管的内部保持在真空气氛下并通过向容纳在反应管内的基板供给成膜气体而进行成膜处理的方法包括：执行通过将保持多个基板的基板保持器保持在反应管中，相对于基板的成膜工艺; 从反应管中进行基板保持器; 并将冷却夹具装入反应管中以冷却反应管的内壁，以便通过热应力剥离附着在反应管内壁上的薄膜，并将薄膜收集在冷却夹具中通过热泳。

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