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1. 发明申请

US20140202635A1 MOUNTING TABLE AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：安装台和等离子体加工设备
公开(公告)号：US20140202635A1
公开(公告)日：2014-07-24
申请号：US14160735
申请日：2014-01-22
申请人： TOKYO ELECTRON LIMITED
发明人： Shin YAMAGUCHI , Daisuke HAYASHI , Yasuhisa KUDO
IPC分类号： H01J37/32 , H01L21/687 , H01L21/683
CPC分类号： H01L21/68742 , H01J37/32715 , H01J37/32733 , H01L21/6831 , Y10T279/23
摘要： A mounting table includes an electrostatic chuck having a mounting surface and a backside opposite to the mounting surface, a first through hole being formed in the mounting table; a base joined to the backside of the electrostatic chuck and having a second through hole in communication with the first through hole; a lifter pin which is received in a pin hole formed by the first through hole and the second through hole, the lifter pin being movable up and down to protrude beyond and retract below the mounting surface. An upper end portion of the lifter pin has a shape in which a diameter decreases toward a lower end of the lifter pin to correspond to a shape of the upper end portion of the pin hole. The upper end portion of the lifter pin is in surface contact with the upper end portion of the pin hole.
摘要翻译：安装台包括具有安装表面和与安装表面相对的后侧的静电卡盘，在安装台上形成有第一通孔; 连接到所述静电卡盘的背面并具有与所述第一通孔连通的第二通孔的基座; 收纳在由所述第一通孔和所述第二通孔形成的销孔中的升降销，所述升降销可上下移动，突出超过所述安装面的下方。提升销的上端部具有直径朝向升降销的下端减小的形状，以对应于销孔的上端部的形状。升降销的上端部与销孔的上端部表面接触。

2. 发明申请

US20190304760A1 TEMPERATURE ADJUSTMENT METHOD 审中-公开
公开(公告)号：US20190304760A1
公开(公告)日：2019-10-03
申请号：US16372452
申请日：2019-04-02
申请人： TOKYO ELECTRON LIMITED
发明人： Akiyoshi MITSUMORI , Shin YAMAGUCHI
IPC分类号： H01J37/32 , H01L21/683
摘要： A temperature adjustment method according to one exemplary embodiment is a temperature adjustment method of adjusting a temperature of a loading table on which a workpiece is loaded using a refrigerant. The step of increasing the temperature of the loading table includes a step of adjusting the temperature of the loading table to a first temperature by opening an expansion valve between an output terminal of a condenser and an input terminal of a heat exchange unit and adjusting an opening degree of the expansion valve, and a step of adjusting the temperature of the loading table to a second temperature by opening the expansion valve, inputting heat to the loading table, opening a flow dividing valve between an output terminal of a compressor and the input terminal of the heat exchange unit, and adjusting an opening degree of the flow dividing valve.

3. 发明申请

US20180350561A1 ELECTROSTATIC CHUCK AND PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180350561A1
公开(公告)日：2018-12-06
申请号：US15987110
申请日：2018-05-23
申请人： TOKYO ELECTRON LIMITED
发明人： Shin YAMAGUCHI , Akiyoshi MITSUMORI
IPC分类号： H01J37/32 , H02N13/00 , H01L21/683 , C23C16/458
CPC分类号： H01J37/32449 , C23C16/4586 , H01J37/3255 , H01J37/32724 , H01L21/67109 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H02N13/00
摘要： An electrostatic chuck of an embodiment includes a base, a dielectric layer, and a chuck main body. The dielectric layer is provided on the base, and is fixed to the base. The chuck main body is mounted on the dielectric layer. The chuck main body has a ceramic main body, a first electrode, a second electrode, and a third electrode. The ceramic main body has a substrate mounting region. The first electrode is provided in the substrate mounting region. The second electrode and the third electrode form a bipolar electrode. The second electrode and the third electrode are provided in the ceramic main body, and are provided between the first electrode and the dielectric layer.

4. 发明申请

US20220415693A1 SUBSTRATE SUPPORT AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20220415693A1
公开(公告)日：2022-12-29
申请号：US17846605
申请日：2022-06-22
申请人： Tokyo Electron Limited
发明人： Hideto SAITO , Makoto KATO , Shin YAMAGUCHI , Takashi KANAZAWA , Ryoma MUTO
IPC分类号： H01L21/683 , H01L21/67 , H01J37/32
摘要： A substrate support includes an electrostatic chuck formed of ceramics and holding a substrate by electrostatic attraction, a base supporting the electrostatic chuck, and a flow path through which a heat exchange medium flows. An upper surface of the flow path is formed of ceramics.

5. 发明申请

US20220285138A1 SUBSTRATE SUPPORT 有权
公开(公告)号：US20220285138A1
公开(公告)日：2022-09-08
申请号：US17653165
申请日：2022-03-02
申请人： Tokyo Electron Limited
发明人： Shin YAMAGUCHI , Yasuharu SASAKI , Koei ITO
IPC分类号： H01J37/32 , H01L21/683
摘要： A substrate support includes a base, a substrate support layer disposed on the base, the substrate support layer being formed of an insulating material, and an electrostatic internal electrode layer disposed in the substrate support layer, the electrostatic internal electrode layer including a body portion and a plurality of protruding portions, the body portion having a circular shape in a plan view, and the plurality of protruding portions radially protruding from the body portion.

6. 发明申请

US20210005432A1 ELECTROSTATIC CHUCK AND PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20210005432A1
公开(公告)日：2021-01-07
申请号：US17027101
申请日：2020-09-21
申请人： Tokyo Electron Limited
发明人： Shin YAMAGUCHI , Akiyoshi MITSUMORI
IPC分类号： H01J37/32 , H02N13/00 , C23C16/458 , H01L21/683 , H01L21/687 , H01L21/67
摘要： An electrostatic chuck of an embodiment includes a base, a dielectric layer, and a chuck main body. The dielectric layer is provided on the base, and is fixed to the base. The chuck main body is mounted on the dielectric layer. The chuck main body has a ceramic main body, a first electrode, a second electrode, and a third electrode. The ceramic main body has a substrate mounting region. The first electrode is provided in the substrate mounting region. The second electrode and the third electrode form a bipolar electrode. The second electrode and the third electrode are provided in the ceramic main body, and are provided between the first electrode and the dielectric layer.

7. 发明申请

US20180350568A1 METHOD OF OPERATING ELECTROSTATIC CHUCK OF PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180350568A1
公开(公告)日：2018-12-06
申请号：US15987085
申请日：2018-05-23
申请人： TOKYO ELECTRON LIMITED
发明人： Akiyoshi MITSUMORI , Shin YAMAGUCHI
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32724 , H01J37/32027 , H01J37/32458 , H01J37/32715 , H01L21/67248 , H01L21/67253 , H01L21/6833
摘要： In an embodiment, there is provided a method of operating an electrostatic chuck of a plasma processing apparatus. The electrostatic chuck has a base, a dielectric layer formed on the base, and a chuck main body mounted on the dielectric layer. In the method, a temperature difference between the temperature of the base and the temperature of the chuck main body is reduced in a state in which the chuck main body is attracted to the dielectric layer with a relatively small electrostatic attractive force. In a case where the temperature difference between the temperature of the base and the temperature of the chuck main body becomes equal to or less than a predetermined value, the chuck main body is fixed to the base via the dielectric layer by a relatively large electrostatic attractive force.

8. 发明申请

US20220406576A1 SUBSTRATE PROCESSING APPARATUS AND ELECTROSTATIC CHUCK 有权
公开(公告)号：US20220406576A1
公开(公告)日：2022-12-22
申请号：US17846033
申请日：2022-06-22
申请人： Tokyo Electron Limited
发明人： Kohei OTSUKI , Shin YAMAGUCHI , Daisuke SATAKE
IPC分类号： H01J37/32
摘要： A substrate processing apparatus is provided. The apparatus comprises a chamber; a substrate support which is arranged in the chamber and has at least one first gas supply path; and at least one control valve configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path. The substrate support includes a base, and an electrostatic chuck which is arranged on the base and has an upper surface. The upper surface has a plurality of protrusions and a first annular groove group. The first annular groove group comprises a first inner annular groove, a first intermediate annular groove, and a first outer annular groove. Any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicates with the at least one first gas supply path.

9. 发明申请

US20210327741A1 SUBSTRATE SUPPORT AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20210327741A1
公开(公告)日：2021-10-21
申请号：US17273009
申请日：2019-09-03
申请人： Tokyo Electron Limited
发明人： Akira NAGAYAMA , Yasuharu SASAKI , Taketoshi TOMIOKA , Shin YAMAGUCHI
IPC分类号： H01L21/683 , H01J37/32
摘要： A substrate support is provided that includes: a base; an electrostatic chuck on which a substrate is placed; an electrode provided in the electrostatic chuck; a contact portion of the electrode; an adhesive layer that bonds the electrostatic chuck with the base and that does not cover the contact portion; and a power supply terminal contacting the contact portion of the electrode without being fixed to the contact portion.

10. 发明申请

US20210305025A1 SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20210305025A1
公开(公告)日：2021-09-30
申请号：US17190178
申请日：2021-03-02
申请人： Tokyo Electron Limited
发明人： Hajime TAMURA , Yasuharu SASAKI , Shin YAMAGUCHI , Tsuguto SUGAWARA , Katsuyuki KOIZUMI
IPC分类号： H01J37/32 , H02N13/00
摘要： The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

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