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1. 发明申请

US20150155197A1 COATING FILM FORMING APPARATUS, COATING FILM FORMING METHOD, AND STORAGE MEDIUM 有权
标题翻译：涂膜成型装置，涂膜成型方法和储存介质
公开(公告)号：US20150155197A1
公开(公告)日：2015-06-04
申请号：US14553496
申请日：2014-11-25
申请人： TOKYO ELECTRON LIMITED
发明人： Kouzou TACHIBANA
IPC分类号： H01L21/687 , B05C5/00 , H01L21/673 , H01L21/02 , H01L21/67 , B05C11/08 , B05C11/10
CPC分类号： B05C11/023 , F26B21/028 , G03F7/162 , H01L21/6715 , H01L21/68721 , H01L21/68742
摘要： A coating film forming apparatus includes a substrate holding unit, a ring-shaped member annularly installed along a circumferential direction of the substrate so as to cover an upper side of a peripheral edge portion of the substrate, and a control unit that outputs a control signal so as to perform: positioning the ring-shaped member at a processing position where an air flow flowing above the peripheral edge portion of the substrate is straightened; rotating the substrate at a first revolution number such that a coating liquid supplied to a central portion of the substrate is diffused toward the peripheral edge portion by a centrifugal force; bringing the ring-shaped member to a retreated position where an air flow flowing near a front surface of the substrate is prevented from becoming turbulent; and reducing the revolution number of the substrate to a second revolution number lower than the first revolution number.
摘要翻译：涂膜形成装置包括：基板保持单元，沿着基板的圆周方向环状地安装以覆盖基板的周缘部的上侧的环状构件;以及控制单元，其输出控制信号以便执行：将所述环形构件定位在流过所述基板的周缘部分的空气流被拉直的处理位置; 以第一转数旋转基板，使得供给到基板的中心部分的涂布液通过离心力向周缘部分扩散; 使环状部件处于退避位置，在该位置处防止在基板的前表面附近流动的空气流变得湍流; 并将基板的转数减小到低于第一转数的第二转数。

2. 发明申请

US20200234998A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20200234998A1
公开(公告)日：2020-07-23
申请号：US16737526
申请日：2020-01-08
申请人： TOKYO ELECTRON LIMITED
发明人： Hitoshi KOSUGI , Shota UMEZAKI , Kouzou TACHIBANA , Ryo YAMAMOTO
IPC分类号： H01L21/687 , H01L21/306 , H01L21/67
摘要： A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.

3. 发明申请

US20150251211A1 Coating Film Forming Apparatus, Coating Film Forming Method, and Storage Medium 有权
标题翻译：涂膜成型设备，涂膜成型方法和存储介质
公开(公告)号：US20150251211A1
公开(公告)日：2015-09-10
申请号：US14722191
申请日：2015-05-27
申请人： TOKYO ELECTRON LIMITED
发明人： Kouzou TACHIBANA
IPC分类号： B05C21/00 , H01L21/67 , B05C11/08
CPC分类号： B05C11/023 , F26B21/028 , G03F7/162 , H01L21/6715 , H01L21/68721 , H01L21/68742
摘要： A coating film forming apparatus includes a substrate holding unit, a ring-shaped member annularly installed along a circumferential direction of the substrate so as to cover an upper side of a peripheral edge portion of the substrate, and a control unit that outputs a control signal so as to perform: positioning the ring-shaped member at a processing position where an air flow flowing above the peripheral edge portion of the substrate is straightened; rotating the substrate at a first revolution number such that a coating liquid supplied to a central portion of the substrate is diffused toward the peripheral edge portion by a centrifugal force; bringing the ring-shaped member to a retreated position where an air flow flowing near a front surface of the substrate is prevented from becoming turbulent; and reducing the revolution number of the substrate to a second revolution number lower than the first revolution number.
摘要翻译：涂膜形成装置包括：基板保持单元，沿着基板的圆周方向环状地安装以覆盖基板的周缘部的上侧的环状构件;以及控制单元，其输出控制信号以便执行：将所述环形构件定位在流过所述基板的周缘部分的空气流被拉直的处理位置; 以第一转数旋转基板，使得供给到基板的中心部分的涂布液通过离心力向周缘部分扩散; 使环状部件处于退避位置，在该位置处防止在基板的前表面附近流动的空气流变得湍流; 并将基板的转数减小到低于第一转数的第二转数。

4. 发明申请

US20220130691A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20220130691A1
公开(公告)日：2022-04-28
申请号：US17510234
申请日：2021-10-25
申请人： TOKYO ELECTRON LIMITED
发明人： Kouzou TACHIBANA , Katsuhiro MORIKAWA , Kouichi MIZUNAGA , Masami AKIMOTO , Kousuke NEGISHI
IPC分类号： H01L21/67 , H01L21/683
摘要： A substrate processing method of performing liquid processing on a substrate in a substrate processing apparatus, which includes a substrate table configured to suction the substrate, a heater configured to heat the substrate table, and a processing liquid nozzle configured to supply a processing liquid to the substrate suctioned to the substrate table, includes: a suctioning process of suctioning the substrate by the substrate table when there is no temperature difference between the substrate and the substrate table or when a temperature difference between the substrate and the substrate is within a predetermined range; and after the suctioning process, a processing liquid supply process of supplying the processing liquid from the processing liquid nozzle to the substrate suctioned to the substrate table heated by the heater.

5. 发明申请

US20140030423A1 LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND STORAGE MEDIUM FOR LIQUID PROCESSING 有权
标题翻译：液体加工设备，液体加工方法和液体加工储存介质
公开(公告)号：US20140030423A1
公开(公告)日：2014-01-30
申请号：US13949733
申请日：2013-07-24
申请人： TOKYO ELECTRON LIMITED
发明人： Minoru KUBOTA , Kousuke YOSHIHARA , Kouzou TACHIBANA
IPC分类号： G03F7/16
CPC分类号： G03F7/16 , B05C5/0258 , B05C11/08 , B05C11/1002 , B08B3/08 , B08B3/10 , G03F7/162 , H01L21/67051 , H01L21/6715 , H01L21/67178
摘要： A liquid processing apparatus includes a substrate holding unit arranged within a processing cup and configured to horizontally hold a substrate, a rotating mechanism configured to rotate the substrate holding unit about a vertical axis, a processing liquid supply unit configured to supply a processing liquid onto a surface of the substrate, and an exhaust mechanism configured to discharge an atmospheric gas around the substrate. The exhaust mechanism includes an exhaust flow path connected to an exhaust port formed at the processing cup, a circulation flow path branched from the exhaust flow path and configured to communicate with the processing cup, a gas liquid separator, a first regulator valve installed at one end of the exhaust flow path, and a second regulator valve installed at the other end of the exhaust flow path.
摘要翻译：液体处理装置包括布置在处理杯内并被配置为水平地保持基板的基板保持单元，被配置为使基板保持单元围绕垂直轴旋转的旋转机构，配置成将处理液供给到基板的表面，以及构造成将基板周围的大气气体排出的排气机构。排气机构包括连接到形成在处理杯处的排气口的排气流路，从排气流路分支配置成与处理杯连通的循环流路，气液分离器，安装在处理杯一侧的第一调节阀排气流路的端部，以及安装在排气流路的另一端的第二调节阀。

6. 发明申请

US20230023792A1 SUBSTRATE PROCESSING METHOD 有权
公开(公告)号：US20230023792A1
公开(公告)日：2023-01-26
申请号：US17757026
申请日：2020-12-03
申请人： Tokyo Electron Limited
发明人： Kouzou TACHIBANA
IPC分类号： H01L21/311 , H01L21/67
摘要： A substrate processing method includes: a first etching step of performing a first etching by supplying an etching liquid on a front surface of a substrate while rotating the substrate, wherein the first etching is performed under a condition in which a second etching amount of an etching target film in a second region on a peripheral edge of the front surface, is greater than a first etching amount of the etching target film in a first region on a center side of the front surface; and a second etching step of performing a second etching by supplying the etching liquid to the front surface of the substrate while rotating the substrate, wherein the second etching is performed under a condition in which the second etching amount of the etching target film in the second region of the front surface of the substrate is smaller than the first etching amount of the etching target film in the first region.

7. 发明申请

US20220059357A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20220059357A1
公开(公告)日：2022-02-24
申请号：US17519785
申请日：2021-11-05
申请人： TOKYO ELECTRON LIMITED
发明人： Hitoshi KOSUGI , Shota UMEZAKI , Kouzou TACHIBANA , Ryo YAMAMOTO
IPC分类号： H01L21/306 , H01L21/687 , H01L21/67
摘要： A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.

8. 发明申请

US20170345685A1 SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING SYSTEM AND MEMORY MEDIUM 审中-公开
公开(公告)号：US20170345685A1
公开(公告)日：2017-11-30
申请号：US15599067
申请日：2017-05-18
申请人： TOKYO ELECTRON LIMITED
发明人： Kenji SEKIGUCHI , Itaru KANNO , Meitoku AIBARA , Kouzou TACHIBANA
IPC分类号： H01L21/67 , B08B3/04 , B08B7/00 , H01L21/02
摘要： A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.

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