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1. 发明授权

US09977070B2 Method for inspecting magnetron 有权
公开(公告)号：US09977070B2
公开(公告)日：2018-05-22
申请号：US14886425
申请日：2015-10-19
申请人： Tokyo Electron Limited
发明人： Kazushi Kaneko , Hideo Kato , Kazunori Funazaki , Eiji Takahashi
IPC分类号： G01R31/25 , H01J37/32 , H01J37/34
CPC分类号： G01R31/255 , H01J37/3288 , H01J37/32926 , H01J37/3405 , H01J37/3476
摘要： A magnetron can be inspected with high accuracy. A life of the magnetron is determined on the basis of a comparison between a current parameter, which indicates a current status of the magnetron and is obtained from the one or more measurement values for specifying a current status of the magnetron at a time point when a time period having a predetermined duration or more has elapsed after generation of a high frequency power by the magnetron is started, and a difference between a power of a progressive wave and a set power is equal to or lower than a first predetermined value and a power of a reflection wave is equal to or lower than a second predetermined value, and an initial parameter, which indicates an initial status of the magnetron and corresponds to the current parameter.

2. 发明授权

US10074524B2 Plasma processing apparatus and high frequency generator 有权
公开(公告)号：US10074524B2
公开(公告)日：2018-09-11
申请号：US14386648
申请日：2013-03-25
申请人： TOKYO ELECTRON LIMITED
发明人： Kazushi Kaneko , Kazunori Funazaki , Hideo Kato
IPC分类号： C23C14/00 , H01J37/34 , C23C16/511 , H03B9/10 , H01J37/32 , H03L1/00 , H03L5/02 , H05H1/46
CPC分类号： H01J37/3405 , C23C16/511 , H01J37/32192 , H01J37/32311 , H01J37/32935 , H01J2237/332 , H03B9/10 , H03L1/00 , H03L5/02 , H05H2001/4682
摘要： A plasma processing apparatus (11) is provided with: a processing container (12), in which processing is performed using plasma; a plasma generating mechanism (19), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (12), and which generates plasma in the processing container (12) using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.

3. 发明授权

US09646867B2 Plasma processing apparatus, power supply unit and mounting table system 有权
公开(公告)号：US09646867B2
公开(公告)日：2017-05-09
申请号：US14519903
申请日：2014-10-21
申请人： TOKYO ELECTRON LIMITED
发明人： Masahiko Konno , Masayuki Shintaku , Takashi Suzuki , Michitaka Aita , Taizo Okada , Naohiko Okunishi , Hideo Kato , Naoki Matsumoto
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6831 , H01J37/32192 , H01J37/32311 , H01J37/32577 , H01J37/32715 , H01J37/32724 , H01L21/67103
摘要： A plasma processing apparatus includes a mounting table including a lower electrode and an electrostatic chuck, a high frequency power supply electrically connected to the lower electrode, a heater provided in the electrostatic chuck, a heater power supply for supplying a power to the heater, a filter unit including a filter connected to the heater power supply, a rod-shaped power feeder connecting the heater power supply and the heater via the filter, an insulating tubular portion having an inner hole through which the power feeder extends, and a conductive choke portion serving to suppress a microwave propagating through the tubular portion. The choke portion includes a first portion extending from the power feeder in a direction intersecting with a longitudinal direction of the power feeder and a cylindrical second portion extending, between the tubular portion and the power feeder, from a peripheral portion of the first portion.

4. 发明授权

US11372058B2 Impedance matching device, abnormality diagnosis method, and storage medium for abnormality diagnosis program 有权
公开(公告)号：US11372058B2
公开(公告)日：2022-06-28
申请号：US16837560
申请日：2020-04-01
申请人： TOKYO ELECTRON LIMITED
发明人： Hideo Kato
IPC分类号： G01R31/64 , H03H7/40 , H03H1/00
摘要： An impedance matching device includes: a variable capacitor connected between a radio-frequency power supply and a load; a first detector that detects an index value that determines impedance matching between the radio-frequency power supply and the load, and a first state value that indicates a state of a radio-frequency power; a second detector that detects a second state value that indicates a state of radio-frequency power output to the load; an adjustment unit that adjusts a capacitance value of the variable capacitor such that the index value detected by the first detector falls within a target range; and a diagnosis unit configured to diagnose an abnormality of the variable capacitor, the first detector, or the second detector based on the capacitance value adjusted by the adjustment unit, the first state value detected by the first detector, and the second state value detected by the second detector.

5. 发明申请

US20200319263A1 IMPEDANCE MATCHING DEVICE, ABNORMALITY DIAGNOSIS METHOD, AND STORAGE MEDIUM FOR ABNORMALITY DIAGNOSIS PROGRAM 审中-公开
公开(公告)号：US20200319263A1
公开(公告)日：2020-10-08
申请号：US16837560
申请日：2020-04-01
申请人： TOKYO ELECTRON LIMITED
发明人： Hideo Kato
IPC分类号： G01R31/64 , H03H7/40
摘要： An impedance matching device includes: a variable capacitor connected between a radio-frequency power supply and a load; a first detector that detects an index value that determines impedance matching between the radio-frequency power supply and the load, and a first state value that indicates a state of a radio-frequency power; a second detector that detects a second state value that indicates a state of radio-frequency power output to the load; an adjustment unit that adjusts a capacitance value of the variable capacitor such that the index value detected by the first detector falls within a target range; and a diagnosis unit configured to diagnose an abnormality of the variable capacitor, the first detector, or the second detector based on the capacitance value adjusted by the adjustment unit, the first state value detected by the first detector, and the second state value detected by the second detector.

6. 发明授权

US10510513B2 Plasma processing device and high-frequency generator 有权
公开(公告)号：US10510513B2
公开(公告)日：2019-12-17
申请号：US14380331
申请日：2013-01-15
申请人： TOKYO ELECTRON LIMITED
发明人： Kazushi Kaneko , Kazunori Funazaki , Hideo Kato
IPC分类号： H01J37/32 , H05H1/46 , H01Q21/06 , H01Q21/20 , C23C16/511 , C23C16/52 , H01J37/34
摘要： Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.

7. 发明授权

US09373483B2 Plasma processing apparatus and high frequency generator 有权
标题翻译：等离子处理装置和高频发生器
公开(公告)号：US09373483B2
公开(公告)日：2016-06-21
申请号：US14420102
申请日：2013-05-29
申请人： TOKYO ELECTRON LIMITED
发明人： Kazushi Kaneko , Kazunori Funazaki , Hideo Kato
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32128 , H01J37/3211 , H01J37/32119 , H01J37/32192 , H01J37/32229 , H01J37/32256 , H01J2237/327 , H01J2237/3321 , H01J2237/334 , H05H1/46 , H05H2001/4622
摘要： Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit.
摘要翻译：提供了一种使用等离子体对加工对象物体进行处理的等离子体处理装置。等离子体处理装置包括处理容器和等离子体生成机构，其包括设置在处理容器外部的高频发生器，以产生高频波。等离子体产生机构使用高频波在处理容器中产生等离子体，并且包括：振荡高频波的高频振荡器; 电源单元，向高频振荡器供电; 将由高频振荡器振荡的高频波传播到成为负载侧的处理容器侧的波导路径; 以及电压驻波比可变机构，其根据从电源单元供给的电力，改变由高频波形成的波导路径中的电压驻波的电压驻波比。

8. 发明申请

US20160109502A1 METHOD FOR INSPECTING MAGNETRON 有权
标题翻译：检查磁铁的方法
公开(公告)号：US20160109502A1
公开(公告)日：2016-04-21
申请号：US14886425
申请日：2015-10-19
申请人： Tokyo Electron Limited
发明人： Kazushi Kaneko , Hideo Kato , Kazunori Funazaki , Eiji Takahashi
IPC分类号： G01R31/25
CPC分类号： G01R31/255 , H01J37/3288 , H01J37/32926 , H01J37/3405 , H01J37/3476
摘要： A magnetron can be inspected with high accuracy. A life of the magnetron is determined on the basis of a comparison between a current parameter, which indicates a current status of the magnetron and is obtained from the one or more measurement values for specifying a current status of the magnetron at a time point when a time period having a predetermined duration or more has elapsed after generation of a high frequency power by the magnetron is started, and a difference between a power of a progressive wave and a set power is equal to or lower than a first predetermined value and a power of a reflection wave is equal to or lower than a second predetermined value, and an initial parameter, which indicates an initial status of the magnetron and corresponds to the current parameter.
摘要翻译：可以高精度地检查磁控管。基于当前参数之间的比较来确定磁控管的寿命，当前参数表示磁控管的当前状态，并且从用于指定磁控管的当前状态的一个或多个测量值获得，开始通过磁控管产生高频功率之后经过了预定持续时间以上的时间段，并且逐行波功率和设定功率之间的差异等于或低于第一预定值和功率反射波等于或低于第二预定值，以及初始参数，其指示磁控管的初始状态并对应于当前参数。

9. 发明申请

US20150214011A1 PLASMA PROCESSING APPARATUS AND HIGH FREQUENCY GENERATOR 有权
标题翻译：等离子体加工设备和高频发电机
公开(公告)号：US20150214011A1
公开(公告)日：2015-07-30
申请号：US14420102
申请日：2013-05-29
申请人： TOKYO ELECTRON LIMITED
发明人： Kazushi Kaneko , Kazunori Funazaki , Hideo Kato
IPC分类号： H01J37/32
CPC分类号： H01J37/32128 , H01J37/3211 , H01J37/32119 , H01J37/32192 , H01J37/32229 , H01J37/32256 , H01J2237/327 , H01J2237/3321 , H01J2237/334 , H05H1/46 , H05H2001/4622
摘要： Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit.
摘要翻译：提供了一种使用等离子体对加工对象物体进行处理的等离子体处理装置。等离子体处理装置包括处理容器和等离子体生成机构，其包括设置在处理容器外部的高频发生器，以产生高频波。等离子体产生机构使用高频波在处理容器中产生等离子体，并且包括：振荡高频波的高频振荡器; 电源单元，向高频振荡器供电; 将由高频振荡器振荡的高频波传播到成为负载侧的处理容器侧的波导路径; 以及电压驻波比可变机构，其根据从电源单元供给的电力，改变通过高频波形成在波导路径中的电压驻波的电压驻波比。

10. 发明申请

US20140225504A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND HIGH FREQUENCY GENERATOR 有权
标题翻译：等离子体处理装置，等离子体处理方法和高频发生器
公开(公告)号：US20140225504A1
公开(公告)日：2014-08-14
申请号：US14177421
申请日：2014-02-11
申请人： Tokyo Electron Limited
发明人： Kazushi Kaneko , Naoki Matsumoto , Koji KOYAMA , Kazunori Funazaki , Hideo Kato , Kiyotaka Ishibashi
IPC分类号： H01J37/32 , H03L5/02 , H05H1/46
CPC分类号： H01J37/32935 , H01J37/32192 , H03L5/02 , H05H1/46 , H05H2001/463 , H05H2001/4682
摘要： A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.
摘要翻译：等离子体处理装置包括：等离子体产生装置，其被配置为通过使用由包括被配置为产生高频波的磁控管42的微波发生器41产生的高频波在处理容器内产生等离子体; 被配置为分别测量传播到负载侧的行波的功率和从负载侧反射的反射波的功率的检测器54a和54b; 以及电压控制电路53a，其被配置为通过电源43控制提供给磁控管42的电压。此外，电压控制电路53a包括负载控制装置，其被配置为向磁控管42提供与计算出的功率相对应的电压通过将由检测器54b测量的反射波的功率计算出的功率与由检测器54a测量的行波的功率相加。

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