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1. 发明申请

US20230028652A1 MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY, AND ARTIFICIAL INTELLIGENCE SYSTEM 有权
公开(公告)号：US20230028652A1
公开(公告)日：2023-01-26
申请号：US17860546
申请日：2022-07-08
申请人： TOHOKU UNIVERSITY
发明人： Yoshiaki SAITO , Tetsuo ENDOH , Shoji IKEDA
IPC分类号： G11C11/16 , H01L43/08 , H01L43/10 , H01L27/22 , H01L43/04 , H01F10/32 , G11C11/18 , G06N3/063
摘要： A magnetic multilayer film for a magnetic memory element includes an amorphous heavy metal layer having a multilayer structure in which a plurality of first layers containing Hf alternate repeatedly with a plurality of second layers containing a heavy metal excluding Hf; and a recording layer that includes a ferromagnetic layer and that is adjacent to the heavy metal layer, the ferromagnetic layer having a variable magnetization direction.

2. 发明申请

US20210399208A1 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND FILM FORMATION METHOD FOR SAID MAGNETORESISTANCE EFFECT ELEMENT 有权
公开(公告)号：US20210399208A1
公开(公告)日：2021-12-23
申请号：US17271200
申请日：2019-08-30
申请人： TOHOKU UNIVERSITY
发明人： Koichi NISHIOKA , Tetsuo ENDOH , Shoji IKEDA , Hideo SATO , Hiroaki HONJO
IPC分类号： H01L43/02 , H01L27/22 , H01L43/10 , H01L43/12
摘要： For implementation of a magnetoresistance effect element having a quadruple interface, a magnetoresistance effect element having a small resistance area product RA, a high magnetoresistance ratio, and a high effective magnetic anisotropy energy density Kefft* is provided.
A magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first divided recording layer (2), a second junction layer (12), a second divided recording layer (3), and a third junction layer (13). The first divided recording layer (2) has a configuration having a high magnetoresistance ratio (MR ratio), and the second divided recording layer (3) has a configuration having a high effective magnetic anisotropy energy density (Kefft).

3. 发明申请

US20200343442A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY 审中-公开
公开(公告)号：US20200343442A1
公开(公告)日：2020-10-29
申请号：US16843708
申请日：2020-04-08
申请人： TOHOKU UNIVERSITY
发明人： Hiroaki HONJO , Tetsuo ENDOH , Hideo SATO , Shoji IKEDA
IPC分类号： H01L43/08 , H01L43/10 , H01L43/02 , G11C11/16 , G11C11/15 , H01L27/22 , G01R33/09
摘要： An object of the invention is to provide a magnetoresistance effect element which includes a reference layer having three or more magnetic layers and which improves a thermal stability factor Δ by decreasing a write error rate using an element structure that enables a wide margin to be secured between a current at which magnetization of the reference layer is reversed and a writing current Ic of a recording layer and by reducing an effect of a stray magnetic field from the reference layer.The magnetoresistance effect element includes: a first recording layer (A1); a first non-magnetic layer (11); and a first reference layer (B1), wherein the first reference layer (B1) including n-number of a plurality of magnetic layers (21, 22, . . . , 2n) and (n-1)-number of a plurality of non-magnetic insertion layers (31, 32, . . . 3(n-1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3.

4. 发明申请

US20170263854A1 SPIN ELECTRONICS ELEMENT AND METHOD OF MANUFACTURING THEREOF 审中-公开
公开(公告)号：US20170263854A1
公开(公告)日：2017-09-14
申请号：US15064586
申请日：2016-03-08
申请人： TOHOKU UNIVERSITY
发明人： Soshi SATO , Masaaki NIWA , Hiroaki HONJO , Shoji IKEDA , Hideo OHNO , Tetsuo ENDO
IPC分类号： H01L43/08 , H01L21/66 , H01L43/10 , G11C11/16 , H01L43/02 , H01L43/12
CPC分类号： H01L43/08 , G11C11/161 , H01L22/12 , H01L22/14 , H01L22/20 , H01L43/12
摘要： A method of manufacturing a spintronics element from laminated layers. The method includes (a) forming a plurality of laminated layers in manufacturing equipment, (b) forming a wafer in the manufacturing equipment, including applying a protection layer directly on a non-magnetic uppermost layer of the laminated layers so that the protection layer prevents alteration of characteristics of the uppermost layer, and (c) exposing the wafer, outside of the manufacturing equipment, to an atmosphere that includes H2O having a partial pressure in the atmosphere equal to or larger than 10−4 Pa.

5. 发明申请

US20190304526A1 MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY 审中-公开
公开(公告)号：US20190304526A1
公开(公告)日：2019-10-03
申请号：US16308166
申请日：2017-05-19
申请人： TOHOKU UNIVERSITY
发明人： Hiroaki HONJO , Shoji IKEDA , Hideo SATO , Tetsuo ENDOH , Hideo OHNO
IPC分类号： G11C11/16 , H01L27/22 , H01L43/10
摘要： A magnetic tunnel junction element with a high MR ratio, and can prevent a recording layer from being damaged, and magnetic memory. A reference layer includes a ferromagnetic body, and has magnetization direction fixed in the vertical direction. A barrier layer includes non-magnetic body, and disposed on one surface side of the reference layer. A recording layer is disposed to sandwich barrier layer between itself and reference layer. The recording layer includes a first ferromagnetic layer including at least one of Co and Fe, and having a magnetization direction variable in vertical direction; a first non-magnetic layer including at least one of Mg, MgO, C, Li, Al, and Si, second non-magnetic layer including at least one of Ta, Hf, W, Mo, Nb, Zr, Y, Sc, Ti, V, and Cr, and second ferromagnetic layer including at least one of Co and Fe, and having a magnetization direction variable in vertical direction.

6. 发明申请

US20180301621A1 SPINTRONICS ELEMENT 审中-公开
公开(公告)号：US20180301621A1
公开(公告)日：2018-10-18
申请号：US16013093
申请日：2018-06-20
申请人： TOHOKU UNIVERSITY
发明人： Soshi SATO , Masaaki NIWA , Hiroaki HONJO , Shoji IKEDA , Hideo SATO , Hideo OHNO , Tetsuo ENDOH
IPC分类号： H01L43/10 , H01F10/32
CPC分类号： H01L43/10 , H01F10/3254 , H01F10/329 , H01L43/02 , H01L43/08
摘要： A spintronics element including a ferromagnetic layer containing boron, and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely, the side face in direct contact with diffusion stopper film, so as to prevent out-diffusion of the boron contained in the ferromagnetic layer. The diffusion stopper film contains boron at a concentration higher than a concentration of the boron in a portion of the ferromagnetic layer where the ferromagnetic layer contacts the diffusion stopper film.

7. 发明申请

US20170110654A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 审中-公开
公开(公告)号：US20170110654A1
公开(公告)日：2017-04-20
申请号：US15392556
申请日：2016-12-28
申请人： TOHOKU UNIVERSITY
发明人： Hideo OHNO , Shoji IKEDA , Fumihiro MATSUKURA , Masaki ENDOH , Shun KANAI , Hiroyuki YAMAMOTO , Katsuya MIURA
IPC分类号： H01L43/08 , H01L43/12 , H01L43/10 , H01L27/22 , G11C11/16 , H01L43/02
CPC分类号： H01L43/08 , G01R33/098 , G11B5/31 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/10 , H01L43/12 , Y10T428/1114
摘要： Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

8. 发明申请

US20170025600A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：US20170025600A1
公开(公告)日：2017-01-26
申请号：US15252128
申请日：2016-08-30
申请人： TOHOKU UNIVERSITY
发明人： Hideo OHNO , Shoji IKEDA , Fumihiro MATSUKURA , Masaki ENDOH , Shun KANAI , Katsuya MIURA , Hiroyuki YAMAMOTO
IPC分类号： H01L43/08 , H01L43/10
摘要： A magnetoresistive element includes a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe or Co, a recording layer having a variable magnetization direction and including a ferromagnetic material, and one non-magnetic layer that is formed between the reference layer and the recording layer and that contains oxygen. One of the reference layer and the recording layer contains Fe. The three layers are arranged so that a magnetization direction of the one of the reference layer and the recording layer becomes perpendicular to a layer surface by an interfacial perpendicular magnetic anisotropy at an interface between the one of the reference layer and the recording layer and the one non-magnetic layer resulting from the one of the reference layer and the recording layer having a predetermined thickness. The one of the reference layer and the recording layer has a bcc structure.
摘要翻译：磁阻元件包括具有固定的磁化方向的参考层，并且包括含有Fe或Co的铁磁材料，具有可变磁化方向并包含铁磁材料的记录层，以及形成在参考层和记录层并含有氧气。参考层和记录层中的一个含有Fe。三层被布置成使得参考层和记录层中的一个的磁化方向通过在参考层和记录层之间的界面处的界面垂直磁各向异性垂直于层表面，并且一个由参考层和记录层之一产生的具有预定厚度的非磁性层。参考层和记录层之一具有bcc结构。

9. 发明公开

US20230407459A1 PLATINUM-BASED SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME 审中-公开
公开(公告)号：US20230407459A1
公开(公告)日：2023-12-21
申请号：US18036827
申请日：2021-11-15
申请人： TOHOKU UNIVERSITY , TANAKA KIKINZOKU KOGYO K.K.
发明人： Akihito FUJINO , Kunihiro TANAKA , Shuichi KUBOTA , Takao ASADA , Tetsuo ENDOH , Shoji IKEDA
IPC分类号： C23C14/34 , C23C14/14
CPC分类号： C23C14/3414 , C23C14/14
摘要： The present invention relates to a platinum-based sputtering target containing platinum or a platinum alloy. The platinum-based sputtering target of the present invention is characterized by a material structure in a thickness-direction cross section thereof. Specifically, when a thickness-direction cross section is equally divided into n sections (n=5 to 20) along a thickness direction, a region including (n−2) sections excluding both end sections is set as a determination region, and when an average grain size in each of the sections is measured in the determination region, as well as an average grain size in the entire determination region is measured, the average grain size in the entire determination region is 150 μm or less, and a coefficient of variation calculated based on the average grain size in each of the sections of the determination region is 15% or less.

10. 发明公开

US20230243062A1 SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER 审中-公开
公开(公告)号：US20230243062A1
公开(公告)日：2023-08-03
申请号：US18011422
申请日：2021-06-14
申请人： GLOBALWAFERS JAPAN CO., LTD. , TOHOKU UNIVERSITY
发明人： Haruo SUDO , Takashi ISHIKAWA , Koji IZUNOME , Hisashi MATSUMURA , Tatsuhiko AOKI , Shoji IKEDA , Tetsuo ENDOH , Etsuo FUKUDA
IPC分类号： C30B15/20 , H01L21/322 , C30B29/06 , C30B33/02
CPC分类号： C30B15/203 , H01L21/3225 , C30B29/06 , C30B33/02
摘要： A silicon wafer is provided which is a Czochralski wafer formed of silicon, and a method for producing the silicon wafer are provided. The wafer includes a bulk layer having an oxygen concentration of 0.5×1018/cm3 or more; and a surface layer extending from the surface of the wafer to 300 nm in depth, and having an oxygen concentration of 2×1018/cm3 or more.

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