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1. 发明公开

US20230243062A1 SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER 审中-公开
公开(公告)号：US20230243062A1
公开(公告)日：2023-08-03
申请号：US18011422
申请日：2021-06-14
申请人： GLOBALWAFERS JAPAN CO., LTD. , TOHOKU UNIVERSITY
发明人： Haruo SUDO , Takashi ISHIKAWA , Koji IZUNOME , Hisashi MATSUMURA , Tatsuhiko AOKI , Shoji IKEDA , Tetsuo ENDOH , Etsuo FUKUDA
IPC分类号： C30B15/20 , H01L21/322 , C30B29/06 , C30B33/02
CPC分类号： C30B15/203 , H01L21/3225 , C30B29/06 , C30B33/02
摘要： A silicon wafer is provided which is a Czochralski wafer formed of silicon, and a method for producing the silicon wafer are provided. The wafer includes a bulk layer having an oxygen concentration of 0.5×1018/cm3 or more; and a surface layer extending from the surface of the wafer to 300 nm in depth, and having an oxygen concentration of 2×1018/cm3 or more.

2. 发明申请

US20210348302A1 METHOD FOR HEAT-TREATING SILICON WAFER 有权
公开(公告)号：US20210348302A1
公开(公告)日：2021-11-11
申请号：US17283158
申请日：2019-10-10
申请人： GLOBALWAFERS JAPAN CO., LTD.
发明人： Aya USHIODA , Tatsuhiko AOKI
IPC分类号： C30B33/02 , C30B29/06 , H01L21/324 , H01L21/322
摘要： Provided is a method for heat-treating a silicon wafer in an inert gas atmosphere, wherein it is possible to discharge SiO gas produced in melting a natural oxide film on the surface of the silicon wafer efficiently, to suppress the accumulation of reaction products in the heat treatment chamber, and to prevent slip deterioration. The wafer is held for a period of 5 to 30 sec inclusive, the rotational speed of the wafer is set to 80 to 120 rpm, and further the inert gas supply in the chamber is controlled so that the gas replacement rate is 90% or more in a temperature range of 900 to 1100° C. inclusive.

3. 发明申请

US20160293446A1 METHOD FOR MANUFACTURING A SILICON WAFER 审中-公开
标题翻译：制造硅波的方法
公开(公告)号：US20160293446A1
公开(公告)日：2016-10-06
申请号：US15082358
申请日：2016-03-28
申请人： GlobalWafers Japan Co., Ltd.
发明人： Haruo SUDO , Koji ARAKI , Tatsuhiko AOKI , Susumu MAEDA
IPC分类号： H01L21/324 , H01L21/311 , H01L21/02
CPC分类号： H01L21/3225
摘要： Provided is a method for manufacturing a silicon wafer including a first step of heat-treating a raw silicon wafer sliced from a silicon single crystal ingot grown by the Czochralski method in an oxidizing gas atmosphere at a maximum target temperature of 1300 to 1380° C., a second step of removing an oxide film on a surface of the heated-treated silicon wafer obtained in the first step, and a third step of heat-treating the stripped silicon wafer obtained in the second step in a non-oxidizing gas atmosphere at a maximum target temperature of 1200 to 1380° C. and at a heating rate of 1° C./sec to 150° C./sec in order that the silicon wafer may have a maximum oxygen concentration of 1.3×1018 atoms/cm3 or below in a region from the surface up to 7 μm in depth.
摘要翻译：本发明提供一种硅晶片的制造方法，其特征在于，包括：在1300〜1380℃的最高目标温度下，在由氧化气体气氛中通过切克劳斯基法生长的硅单晶锭切片的原料硅晶片进行热处理的第一工序。在第一工序中得到的加热处理过的硅晶片的表面除去氧化膜的第二工序，以及在第二工序中得到的剥离后的硅晶片在非氧化性气体气氛下进行热处理的工序最高目标温度为1200〜1380℃，加热速度为1℃/秒〜150℃/秒，以使硅晶片的最大氧浓度为1.3×1018原子/ cm3，或在从表面到深度为7μm的区域中。

4. 发明申请

US20220319835A1 LAMINATION WAFERS AND METHOD OF PRODUCING BONDED WAFERS USING THE SAME 有权
公开(公告)号：US20220319835A1
公开(公告)日：2022-10-06
申请号：US17623639
申请日：2020-07-27
申请人： GLOBALWAFERS JAPAN CO., LTD.
发明人： Tatsuhiko AOKI , Manabu HIRASAWA
IPC分类号： H01L21/02
摘要： The occurrence of breaking and chipping at the wafer peripheral edge of a bonded wafer obtained by bonding a lamination wafer on a support wafer is suppressed. A lamination wafer to be bonded to a support wafer includes a large-diameter portion made of a silicon wafer whose peripheral edge is chamfered and a small-diameter portion, whose diameter is smaller than that of the large-diameter portion, formed on the large-diameter portion concentrically and integrally with the large-diameter portion, and the small-diameter portion includes a straight body portion whose side surface is perpendicular to the wafer surface, and a neck portion whose side surface is oblique with a predetermined angle to the wafer between the straight body portion and the large-diameter portion, and the small-diameter portion is formed such that the upper face of the straight body portion is to be bonded to the support wafer.

5. 发明申请

US20150044422A1 SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：硅波及其制造方法
公开(公告)号：US20150044422A1
公开(公告)日：2015-02-12
申请号：US14448077
申请日：2014-07-31
申请人： GLOBALWAFERS JAPAN CO., LTD.
发明人： Koji ARAKI , Tatsuhiko AOKI , Haruo SUDO , Takeshi SENDA
IPC分类号： H01L29/16 , C30B29/06 , H01L21/02 , C30B33/02
CPC分类号： H01L21/02008 , C30B15/206 , C30B29/06 , C30B33/02 , H01L21/3225 , H01L21/324 , Y10T428/24488 , Y10T428/31
摘要： A silicon wafer is manufactured by subjecting a silicon wafer sliced from a silicon single-crystal ingot grown by the Czochralski process to a rapid thermal process in which the silicon wafer is heated to a maximum temperature within a range of 1300 to 1380° C., and kept at the maximum temperature for 5 to 60 seconds; and removing a surface layer of the wafer where a semiconductor device is to be manufactured by a thickness of not less X [μm] which is calculated according to the below equations (1) to (3): X[μm]=a[μm]+b[μm] (1); a[μm]=(0.0031×(said maximum temperature)[° C.]−3.1)×6.4×(cooling rate)−0.4[° C./second] . . . (2); and b[μm]=a/(solid solubility limit of oxygen) [atoms/cm3]/(oxygen concentration in substrate) [atoms/cm3] (3).
摘要翻译：通过使由切克劳斯基（Czochralski）工艺生长的硅单晶锭切片的硅晶片经受快速热处理，将硅晶片加热至1300〜1380℃的最高温度，并保持在最高温度5至60秒; 并且根据以下等式（1）至（3）计算出不少于X [μm]的厚度，去除要制造半导体器件的晶片的表面层：X [μm] = a [μm ] + b [μm]（1）; a [μm] =（0.0031×（所述最高温度）[℃] -3.1）×6.4×（冷却速度）〜0.4 [℃/秒]。。。（2）; 和b [μm] = a /（氧的固溶度极限）[原子/ cm 3] /（底物中的氧浓度）[原子/ cm 3]（3）。

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