专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08896974B2 Thin film magnetic head with side layers under compression stress 有权
标题翻译：薄膜磁头，侧面压缩应力
公开(公告)号：US08896974B2
公开(公告)日：2014-11-25
申请号：US13853293
申请日：2013-03-29
申请人： TDK Corporation
发明人： Shohei Kawasaki , Shuji Okame , Takayasu Kanaya , Satoshi Miura , Kenzo Makino , Takumi Yanagisawa , Takahiko Machita , Masashi Sano , Hideyuki Ukita
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3932 , B82Y10/00 , G11B5/3909 , G11B2005/3996
摘要： A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the magnetization free and pinned layers, and a pair of side layers that are disposed at both sides of the spin valve film in a track width direction and at least in the vicinity of the magnetization free layer and the magnetization pinned layer. Each of the side layers has a bias magnetic field application layer that includes a soft magnetic layer and applies a bias magnetic field in the track width direction to the magnetization free layer, and a gap layer that is positioned between the spin valve film and the bias magnetic field application layer, and the side layers have compression stresses at least in the vicinity of the magnetization pinned layer.
摘要翻译：薄膜磁头包括自旋阀膜，其包括磁化自由层，磁化固定层和设置在无磁化和被钉扎层之间的非磁性间隔层，以及设置在两者的一对侧层自旋阀膜的边缘在磁道宽度方向上并且至少在磁化自由层和磁化固定层附近。每个侧层具有偏置磁场施加层，该偏置磁场施加层包括软磁性层，并且在轨道宽度方向上向磁化自由层施加偏置磁场，并且位于自旋阀膜与偏置之间的间隙层磁场施加层，并且侧层至少在磁化钉扎层附近具有压应力。

2. 发明授权

US09502056B1 Magnetoresistance element including a stack having a sidewall, and an insulating layer in contact with the sidewall 有权
标题翻译：磁阻元件包括具有侧壁的叠层和与侧壁接触的绝缘层
公开(公告)号：US09502056B1
公开(公告)日：2016-11-22
申请号：US15082992
申请日：2016-03-28
申请人： TDK CORPORATION
发明人： Hidekazu Kojima , Takayasu Kanaya , Hideyuki Ukita , Minoru Ota , Kohei Honma
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , G01R33/09 , G01R33/098 , G11B5/39 , G11B5/3909 , G11B5/3932 , H01L43/08 , H01L43/12
摘要： A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2−G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280° C. of the first oxide and the second oxide, respectively.
摘要翻译： TMR元件包括具有侧壁的堆叠以及与侧壁接触的绝缘层。堆叠包括第一铁磁层，第二铁磁层和位于第一和第二铁磁层之间的隧道势垒层。绝缘层包括仅与侧壁的一部分接触的岛状结构部分和覆盖岛状结构部分和侧壁的涂覆部分。隧道势垒层含有第一氧化物。岛状结构部分包含第二氧化物。第一和第二氧化物中的每一个都是金属氧化物或半导体氧化物。 G2-G1为435kJ / mol以下，其中G1和G2分别为第一氧化物和第二氧化物在280℃下形成的标准吉布斯能量。

3. 发明授权

US10895473B2 Magnetoresistive effect element, manufacturing method thereof, and position detection apparatus 有权
公开(公告)号：US10895473B2
公开(公告)日：2021-01-19
申请号：US16049981
申请日：2018-07-31
申请人： TDK Corporation
发明人： Naoki Ohta , Takayasu Kanaya
IPC分类号： G01D5/16
摘要： The magnetoresistive effect element is provided with a plurality of magnetoresistive effect laminated bodies, a plurality of lower lead electrodes and upper lead electrodes that electrically connect the plurality of magnetoresistive effect laminated bodies in series, and a film that electrically connects the plurality of lower lead electrodes to each other so that none of the plurality of lower lead electrodes is electrically isolated.

4. 发明授权

US09478238B1 Magneto-resistive effect element with recessed antiferromagnetic layer 有权
标题翻译：具有凹陷反铁磁层的磁阻效应元件
公开(公告)号：US09478238B1
公开(公告)日：2016-10-25
申请号：US14753301
申请日：2015-06-29
申请人： TDK Corporation
发明人： Naomichi Degawa , Kenzo Makino , Satoshi Miura , Takayasu Kanaya
IPC分类号： G11B5/39 , G11B5/60
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3932 , G11B2005/3996
摘要： A magneto-resistive effect element (MR element) has a first shield layer; a second shield layer; an inner shield layer that is positioned between the first shield layer and the second shield layer, and that makes contact with the first shield layer and faces the air bearing surface (ABS); and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer; a first pinned layer; a nonmagnetic spacer layer; a second pinned layer that fixes the magnetization direction of the first pinned layer; and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer faces the back surface of the inner shield layer viewed from the ABS. The MR element has an insulating layer positioned between the antiferromagnetic layer and the inner shield layer.
摘要翻译：磁阻效应元件（MR元件）具有第一屏蔽层; 第二屏蔽层; 位于所述第一屏蔽层和所述第二屏蔽层之间并且与所述第一屏蔽层接触并面向所述空气轴承表面（ABS）的内屏蔽层; 以及位于所述第一屏蔽层和所述第二屏蔽层之间的多层膜。多层膜具有自由层; 第一个固定层; 非磁性间隔层; 固定所述第一固定层的磁化方向的第二固定层; 以及与第二被钉扎层交换耦合的反铁磁层。反铁磁层面对从ABS观察的内屏蔽层的后表面。 MR元件具有位于反铁磁层和内屏蔽层之间的绝缘层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式