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1. 发明授权

US09129622B2 CPP-type magnetoresistance effect element and magnetic disk device 有权
标题翻译： CPP型磁阻效应元件和磁盘装置
公开(公告)号：US09129622B2
公开(公告)日：2015-09-08
申请号：US13842948
申请日：2013-03-15
申请人： TDK Corporation
发明人： Takahiko Machita , Naomichi Degawa , Takekazu Yamane , Takumi Yanagisawa , Satoshi Miura , Kenta Hamamoto , Minoru Ota , Kenzo Makino , Shohei Kawasaki
IPC分类号： G11B5/39 , H01L43/08 , G01R33/09
CPC分类号： G11B5/3912 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3932 , G11B5/398 , H01L43/08
摘要： A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.
摘要翻译：通过有效地抑制对介质等的错误写入来防止记录介质劣化的磁阻效应元件包括以夹着磁阻效应的方式层叠形成的磁阻效应部分，上屏蔽层和下屏蔽层部分来自上方和下方，并且处于与层叠方向施加感测电流的垂直于平面（CPP）结构的电流。磁阻效应部分包括非磁性中间层，并且从上下屏蔽层和下屏蔽层上下夹着非磁性中间层的第一铁磁层和第二铁磁层具有倾斜的磁化结构，其中它们的磁化为分别相对于轨道宽度方向倾斜，上屏蔽层和下屏蔽层的磁化相互大致正交，第一铁磁层经由第一交换耦合功能间隙层与上屏蔽层间接地磁耦合，位于所述第一铁磁层和所述上屏蔽层之间，并且所述第二铁磁层经由位于所述第二铁磁层和所述下屏蔽层之间的第二交换耦合功能间隙层与所述下屏蔽层间接地磁耦合。

2. 发明授权

US10700267B2 Magnetoresistive element, manufacturing method thereof and magnetic sensor 有权
公开(公告)号：US10700267B2
公开(公告)日：2020-06-30
申请号：US16163703
申请日：2018-10-18
申请人： TDK Corporation
发明人： Kohei Honma , Satoshi Miura
IPC分类号： H01L43/08 , H01L43/10 , G01R33/09 , H01L27/22 , H01L43/12
摘要： A magnetoresistive element has a magnetization free layer whose magnetization direction changes in an external magnetic field; a magnetization pinned layer whose magnetization direction is pinned in the external magnetic field; and a barrier layer that is positioned between the magnetization free layer and the magnetization pinned layer and that exhibits a magnetoresistive effect. The barrier layer is an oxide of an alloy that includes Mg and Al, and the barrier layer includes a crystalline region and a non-crystalline region.

3. 发明授权

US09747933B1 Magneto-resistive effect element having side shield integrated with upper shield 有权
公开(公告)号：US09747933B1
公开(公告)日：2017-08-29
申请号：US15044559
申请日：2016-02-16
申请人： TDK Corporation
发明人： Hisayoshi Watanabe , Naomichi Degawa , Satoshi Miura , Masachika Hashino , Tetsuya Hiraki , Hidekazu Kojima
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G11B2005/3996
摘要： A magneto-resistive effect element (MR element) has an upper shield that is magnetized in a cross track direction, a lower shield that is positioned at an interval relative to the upper shield in a down track direction, and a multilayer film that is positioned between the upper shield and the lower shield and that faces an air bearing surface (ABS). The multilayer film has a free layer where its magnetization direction fluctuates relative to an external magnetic field, a pinned layer where its magnetization direction is pinned against the external magnetic field, a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and an insulating layer that is positioned at a back side of the free layer viewed from the ABS. The MR element further has a pair of side shields that are positioned at both sides of the free layer and the insulating layer in a cross track direction. The side shields contact the upper shield on the sides of the free layer and the insulating layer in the cross track direction.

4. 发明授权

US09514771B2 Magneto-resistive effect element with recessed antiferromagnetic layer 有权
标题翻译：具有凹陷反铁磁层的磁阻效应元件
公开(公告)号：US09514771B2
公开(公告)日：2016-12-06
申请号：US14672638
申请日：2015-03-30
申请人： TDK Corporation
发明人： Kenzo Makino , Satoshi Miura
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/398 , G11B2005/3996
摘要： A magneto-resistive effect element has a first shield layer, a second layer, and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer, a first pinned layer, a nonmagnetic spacer layer, a second pinned layer that fixes a magnetization direction of the first pinned layer, and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer is positioned away from an air bearing surface (ABS). The second pinned layer has a first part that is positioned away from the ABS, and a second part that makes contact with the first part, and that extends to the ABS parallel to the first pinned layer; and the first part has a first layer that makes contact with the antiferromagnetic layer, a second layer that makes contact with the second part, and a layer that is positioned between the first layer and the second layer, and that exchange-couples the first layer and the second layer in an anti-parallel orientation.
摘要翻译：磁阻效应元件具有第一屏蔽层，第二层和位于第一屏蔽层和第二屏蔽层之间的多层膜。多层膜具有自由层，第一被钉扎层，非磁性间隔层，固定第一被钉扎层的磁化方向的第二固定层和与第二被钉扎层交换耦合的反铁磁层。反铁磁层位于远离空气轴承表面（ABS）的位置。第二被钉扎层具有远离ABS定位的第一部分和与第一部分接触并且平行于第一被钉扎层延伸到ABS的第二部分; 并且第一部分具有与反铁磁层接触的第一层，与第二部分接触的第二层和位于第一层和第二层之间的层，并且将第一层并且第二层处于反平行取向。

5. 发明授权

US08896974B2 Thin film magnetic head with side layers under compression stress 有权
标题翻译：薄膜磁头，侧面压缩应力
公开(公告)号：US08896974B2
公开(公告)日：2014-11-25
申请号：US13853293
申请日：2013-03-29
申请人： TDK Corporation
发明人： Shohei Kawasaki , Shuji Okame , Takayasu Kanaya , Satoshi Miura , Kenzo Makino , Takumi Yanagisawa , Takahiko Machita , Masashi Sano , Hideyuki Ukita
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3932 , B82Y10/00 , G11B5/3909 , G11B2005/3996
摘要： A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the magnetization free and pinned layers, and a pair of side layers that are disposed at both sides of the spin valve film in a track width direction and at least in the vicinity of the magnetization free layer and the magnetization pinned layer. Each of the side layers has a bias magnetic field application layer that includes a soft magnetic layer and applies a bias magnetic field in the track width direction to the magnetization free layer, and a gap layer that is positioned between the spin valve film and the bias magnetic field application layer, and the side layers have compression stresses at least in the vicinity of the magnetization pinned layer.
摘要翻译：薄膜磁头包括自旋阀膜，其包括磁化自由层，磁化固定层和设置在无磁化和被钉扎层之间的非磁性间隔层，以及设置在两者的一对侧层自旋阀膜的边缘在磁道宽度方向上并且至少在磁化自由层和磁化固定层附近。每个侧层具有偏置磁场施加层，该偏置磁场施加层包括软磁性层，并且在轨道宽度方向上向磁化自由层施加偏置磁场，并且位于自旋阀膜与偏置之间的间隙层磁场施加层，并且侧层至少在磁化钉扎层附近具有压应力。

6. 发明授权

US11536784B2 Magnetic sensor and method of manufacturing such 有权
公开(公告)号：US11536784B2
公开(公告)日：2022-12-27
申请号：US17498165
申请日：2021-10-11
申请人： TDK Corporation
发明人： Naoki Ohta , Hiroshi Yamazaki , Satoshi Miura , Kenkichi Anagawa , Yosuke Komasaki
IPC分类号： G01R33/09 , H01L43/12
摘要： A magnetic sensor comprising a resin layer having a first surface and a second surface, which is opposite to the first surface and a magnetoresistive effect unit that detects a magnetic field in a predetermined direction, wherein the magnetoresistive effect unit includes at least a first magnetoresistive effect unit that detects a magnetic field in a first direction, the first direction is a direction orthogonal to the first surface of the resin layer, an inclined surface that is inclined at a predetermined angle with respect to the first surface is formed in the first surface of the resin layer, and the first magnetoresistive effect unit is formed in the inclined surface.

7. 发明授权

US09478238B1 Magneto-resistive effect element with recessed antiferromagnetic layer 有权
标题翻译：具有凹陷反铁磁层的磁阻效应元件
公开(公告)号：US09478238B1
公开(公告)日：2016-10-25
申请号：US14753301
申请日：2015-06-29
申请人： TDK Corporation
发明人： Naomichi Degawa , Kenzo Makino , Satoshi Miura , Takayasu Kanaya
IPC分类号： G11B5/39 , G11B5/60
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3932 , G11B2005/3996
摘要： A magneto-resistive effect element (MR element) has a first shield layer; a second shield layer; an inner shield layer that is positioned between the first shield layer and the second shield layer, and that makes contact with the first shield layer and faces the air bearing surface (ABS); and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer; a first pinned layer; a nonmagnetic spacer layer; a second pinned layer that fixes the magnetization direction of the first pinned layer; and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer faces the back surface of the inner shield layer viewed from the ABS. The MR element has an insulating layer positioned between the antiferromagnetic layer and the inner shield layer.
摘要翻译：磁阻效应元件（MR元件）具有第一屏蔽层; 第二屏蔽层; 位于所述第一屏蔽层和所述第二屏蔽层之间并且与所述第一屏蔽层接触并面向所述空气轴承表面（ABS）的内屏蔽层; 以及位于所述第一屏蔽层和所述第二屏蔽层之间的多层膜。多层膜具有自由层; 第一个固定层; 非磁性间隔层; 固定所述第一固定层的磁化方向的第二固定层; 以及与第二被钉扎层交换耦合的反铁磁层。反铁磁层面对从ABS观察的内屏蔽层的后表面。 MR元件具有位于反铁磁层和内屏蔽层之间的绝缘层。

8. 发明授权

US08891208B2 CPP-type magnetoresistive element including a rear bias structure and lower shields with inclined magnetizations 有权
标题翻译： CPP型磁阻元件包括后偏置结构和具有倾斜磁化的下屏蔽
公开(公告)号：US08891208B2
公开(公告)日：2014-11-18
申请号：US13853927
申请日：2013-03-29
申请人： TDK Corporation
发明人： Naomichi Degawa , Takahiko Machita , Takekazu Yamane , Takumi Yanagisawa , Satoshi Miura , Kenta Hamamoto , Minoru Ota , Kenzo Makino , Shohei Kawasaki
IPC分类号： G11B5/39 , H01L43/08
CPC分类号： G11B5/3932 , G01R33/0076 , G01R33/093 , G01R33/098 , G11B5/3912
摘要： An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.
摘要翻译：抑制对具有MR部件的介质的错误写入的MR元件具有CPP结构。 MR部分包括非磁性中间层和第一和第二铁磁层，以便插入非磁性中间层。第一和第二屏蔽层分别具有磁化相对于磁道宽度方向倾斜的倾斜磁化结构。第一和第二铁磁层分别与第一和第二屏蔽层磁耦合。用于调节至少第一铁磁层的磁化方向的磁化方向调整层位于与在MR部分中检测到的磁场接收的前端面相反的第一铁磁性层的后端面侧。

9. 发明授权

US10698043B2 Triaxial magnetic sensor and method of manufacturing such 有权
公开(公告)号：US10698043B2
公开(公告)日：2020-06-30
申请号：US15715348
申请日：2017-09-26
申请人： TDK Corporation
发明人： Naoki Ohta , Hirokazu Takahashi , Satoshi Miura
IPC分类号： G01R33/02 , G01R33/09 , G01R33/00
摘要： A triaxial magnetic sensor that can detect with high precision magnetic fields in three axial directions comprises a substrate having a first surface and a second surface opposite the first surface, and a magnetic sensor element group provided on the first surface. The magnetic sensor element group includes a first magnetic sensor element for magnetic detection in the x-axis direction, a second magnetic sensor element for magnetic detection in the y-axis direction and a third magnetic sensor element for magnetic detection in the z-axis direction. The first through third magnetic sensor elements respectively contain first through third magneto-resistive effect elements composed of laminated bodies including at least a magnetization fixed layer and a free layer, and the magnetization direction of each of the magnetization fixed layers of the first through third magneto-resistive elements is fixed in a direction inclined at a prescribed angle with respect to the first surface.

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