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1. 发明授权

US11664235B2 Photoresist removal 有权
公开(公告)号：US11664235B2
公开(公告)日：2023-05-30
申请号：US15797057
申请日：2017-10-30
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
发明人： Shang-Yuan Yu , Hsiao Chien-Wen , Jui-Chuan Chang , Shao-Fu Hsu , Shao-Yen Ku , Wen-Chang Tsai , Yuan-Chih Chiang
IPC分类号： H01L21/311 , H01L21/67 , G03F7/42
CPC分类号： H01L21/31133 , G03F7/42 , G03F7/423 , H01L21/6708
摘要： Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

2. 发明申请

US20150064928A1 PHOTORESIST REMOVAL 有权
标题翻译：删除摄影机
公开(公告)号：US20150064928A1
公开(公告)日：2015-03-05
申请号：US14014455
申请日：2013-08-30
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Shang-Yuan Yu , Shao-Yen Ku , Hsiao Chien-Wen , Shao-Fu Hsu , Yuan-Chih Chiang , Wen-Chang Tsai , Jui-Chuan Chang
IPC分类号： H01L21/311 , H01L21/67
CPC分类号： H01L21/31133 , G03F7/42 , G03F7/423 , H01L21/6708
摘要： Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.
摘要翻译：除其他之外，还提供了用于从半导体晶片去除光致抗蚀剂的一种或多种系统和技术。光致抗蚀剂形成在半导体晶片上用于图案化或材料沉积。一旦完成，就以减轻对其上形成的半导体晶片或结构的损伤的方式去除光致抗蚀剂。在一个实施方案中，将三氧化物液体供应到光致抗蚀剂。使用活化剂如紫外线活化剂或过氧化氢活化剂来活化三氧化物液，以产生用于除去光致抗蚀剂的活化三氧化物液体。在一个实施方案中，三氧化物液体的活化导致有助于除去光致抗蚀剂的自由基。在一个实施例中，执行初始光致抗蚀剂条，例如使用硫酸过氧化氢混合物，以除去光致抗蚀剂的第一部分，并且使用活化的三氧化物液体去除光致抗蚀剂的第二部分。

3. 发明授权

US09805946B2 Photoresist removal 有权
公开(公告)号：US09805946B2
公开(公告)日：2017-10-31
申请号：US14014455
申请日：2013-08-30
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Shang-Yuan Yu , Shao-Yen Ku , Hsiao Chien-Wen , Shao-Fu Hsu , Yuan-Chih Chiang , Wen-Chang Tsai , Jui-Chuan Chang
IPC分类号： H01L21/311 , H01L21/67 , G03F7/42
CPC分类号： H01L21/31133 , G03F7/42 , G03F7/423 , H01L21/6708
摘要： Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

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