专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

US20230408930A1 TOOL MISMATCH REDUCTION USING ABERRATION MAP OF THE TOOLS 审中-公开
公开(公告)号：US20230408930A1
公开(公告)日：2023-12-21
申请号：US17843578
申请日：2022-06-17
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Shih-Chuan HUANG , Sheng-Min WANG , Shih-Ming CHANG , Ken-Hsien HSIEH
IPC分类号： G03F7/20
CPC分类号： G03F7/70525 , G03F7/70033
摘要： In a method of tool matching, aberration maps of two or more optical systems of two or more scanner tools are determined. A photoresist pattern is generated by projecting a first layout pattern by an optical system of each one of the two or more scanner tools on a respective substrate. One or more Zernike coefficients of the two or more optical systems are adjusted based on the determined aberration maps of the two or more optical systems to minimize critical dimension (CD) variations in a first region of the photoresist patterns on each respective substrate.

2. 发明申请

US20220283494A1 METHOD FOR FORMING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220283494A1
公开(公告)日：2022-09-08
申请号：US17372076
申请日：2021-07-09
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Sheng-Min WANG , Ken-Hsien HSIEH
IPC分类号： G03F1/70 , H01L21/768 , H01L21/3213 , G03F1/22
摘要： A method comprises generating an original layout having main pattern sets; simulating a first energy distribution of the original layout on a pupil plane of a lithography system, wherein the first energy distribution has a first wavefront; generating a first modified layout by inserting dummy pattern sets in regions of the original layout that are not occupied by the main pattern sets; simulating a second energy distribution of the first modified layout on a pupil plane of a lithography system; determining whether a second wavefront of the simulated second energy distribution is more homogeneous than the first wavefront of the first energy distribution; and performing a first lithography process using a first photomask having the first modified layout in response to second wavefront of the simulated second energy distribution being determined as more homogeneous than the first wavefront of the first energy distribution.

3. 发明公开

US20230314927A1 EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20230314927A1
公开(公告)日：2023-10-05
申请号：US17833830
申请日：2022-06-06
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Sheng-Min WANG , Yu-Tse LAI , Ken-Hsien HSIEH
IPC分类号： G03F1/24 , G03F1/76
CPC分类号： G03F1/24 , G03F1/76
摘要： A photo mask for an extreme ultraviolet (EUV) lithography includes a circuit pattern, and sub-resolution assist patterns disposed around and connected to the circuit pattern. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.

4. 发明公开

US20230205093A1 METHOD OF MANUFACTURING PHOTO MASKS 审中-公开
公开(公告)号：US20230205093A1
公开(公告)日：2023-06-29
申请号：US18114845
申请日：2023-02-27
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Ken-Hsien HSIEH , Ru-Gun LIU , Wei-Shuo SU
IPC分类号： G03F7/20 , H01L21/311 , G03F1/36 , G03F1/70 , G06F30/398
CPC分类号： G03F7/70466 , H01L21/31144 , G03F1/36 , G03F1/70 , G06F30/398 , G06F2119/18
摘要： In a method of manufacturing a photo mask used in a semiconductor manufacturing process, a mask pattern layout in which a plurality of patterns are arranged is acquired. The plurality of patterns are converted into a graph having nodes and links. It is determined whether the nodes are colorable by N colors without causing adjacent nodes connected by a link to be colored by a same color, where N is an integer equal to or more than 3. When it is determined that the nodes are colorable by N colors, the nodes are colored with the N colors. The plurality of patterns are classified into N groups based on the N colored nodes. The N groups are assigned to N photo masks. N data sets for the N photo masks are output.

5. 发明公开

US20240393677A1 METHOD FOR FORMING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240393677A1
公开(公告)日：2024-11-28
申请号：US18790960
申请日：2024-07-31
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Sheng-Min WANG , Ken-Hsien HSIEH
IPC分类号： G03F1/70 , G03F1/22 , G03F7/20 , H01L21/3213 , H01L21/768
CPC分类号： G03F1/70 , G03F1/22 , H01L21/32139 , H01L21/7684 , H01L21/76877 , G03F7/2004
摘要： A method comprises generating an original layout having main pattern sets; simulating a first energy distribution of the original layout on a pupil plane of a lithography system, wherein the first energy distribution has a first wavefront; generating a first modified layout by inserting dummy pattern sets in regions of the original layout that are not occupied by the main pattern sets; simulating a second energy distribution of the first modified layout on a pupil plane of a lithography system; determining whether a second wavefront of the simulated second energy distribution is more homogeneous than the first wavefront of the first energy distribution; and performing a first lithography process using a first photomask having the first modified layout in response to second wavefront of the simulated second energy distribution being determined as more homogeneous than the first wavefront of the first energy distribution.

6. 发明公开

US20230369062A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：US20230369062A1
公开(公告)日：2023-11-16
申请号：US18225623
申请日：2023-07-24
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Ru-Gun LIU , Chih-Ming LAI , Wei-Liang LIN , Yung-Sung YEN , Ken-Hsien HSIEH , Chin-Hsiang LIN
IPC分类号： H01L21/311 , H01L21/027 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/0274 , H01L21/76816 , H01L21/31144 , H01L21/76877
摘要： In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.

7. 发明申请

US20160019333A1 METHOD OF DETERMINING WHETHER A LAYOUT IS COLORABLE 有权
标题翻译：确定布局是否合适的方法
公开(公告)号：US20160019333A1
公开(公告)日：2016-01-21
申请号：US14872338
申请日：2015-10-01
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Wen-Li CHENG , Ming-Hui CHIH , Chia-Ping CHIANG , Ken-Hsien HSIEH , Tsong-Hua OU , Wen-Chun HUANG , Ru-Gun LIU
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/00 , G03F1/70 , G03F7/70283 , G03F7/70433 , G03F7/70466
摘要： A method of determining whether a layout is colorable includes assigning nodes to polygon features of the layout. The method includes designating nodes as being adjacent nodes for nodes separated by less than a minimum pitch. The method includes iteratively removing nodes having less than three adjacent nodes from consideration to identify a node arrangement, wherein all nodes in the node arrangement have at least three adjacent nodes. The method includes determining whether the layout is colorable based on the node arrangement. Determining whether the layout is colorable includes independently assessing each internal node of node arrangement to determine whether each internal node of the node arrangement is colorable. The method includes generating a colored layout design for fabrication of the semiconductor device if each internal node of the node arrangement is colorable; and modifying the layout if at least one internal node of the node arrangement is not colorable.
摘要翻译：确定布局是否可着色的方法包括将节点分配给布局的多边形特征。该方法包括将节点指定为以小于最小间距分开的节点的相邻节点。该方法包括从考虑中迭代地去除具有少于三个相邻节点的节点以识别节点布置，其中节点布置中的所有节点具有至少三个相邻节点。该方法包括基于节点布置确定布局是否可着色。确定布局是否可着色包括独立地评估节点布置的每个内部节点以确定节点布置的每个内部节点是否是可着色的。该方法包括：如果节点装置的每个内部节点是可着色的，则产生用于制造半导体器件的彩色布局设计; 以及如果所述节点装置的至少一个内部节点不可着色，则修改所述布局。

8. 发明申请

US20180277358A1 LITHOGRAPHIC TECHNIQUE FOR FEATURE CUT BY LINE-END SHRINK 审中-公开
公开(公告)号：US20180277358A1
公开(公告)日：2018-09-27
申请号：US15990147
申请日：2018-05-25
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Yung-Sung YEN , Chun-Kuang CHEN , Ko-Bin KAO , Ken-Hsien HSIEH , Ru-Gun LIU
IPC分类号： H01L21/027 , H01L21/768 , H01L21/02 , H01L21/033 , H01L21/311
CPC分类号： H01L21/0274 , H01L21/0228 , H01L21/0273 , H01L21/0337 , H01L21/31144 , H01L21/76802 , H01L21/76816 , H01L21/76877
摘要： A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a dataset specifying a plurality features to be formed on the workpiece. A first patterning of a hard mask of the workpiece is performed based on a first set of features of the plurality of features, and a first spacer material is deposited on a sidewall of the patterned hard mask. A second patterning is performed based on a second set of features, and a second spacer material is deposited on a sidewall of the first spacer material. A third patterning is performed based on a third set of features. A portion of the workpiece is selectively processed using a pattern defined by a remainder of at least one of the patterned hard mask layer, the first spacer material, or the second spacer material.

9. 发明申请

US20140101623A1 METHOD OF MERGING COLOR SETS OF LAYOUT 有权
标题翻译：合并色彩集合的方法
公开(公告)号：US20140101623A1
公开(公告)日：2014-04-10
申请号：US14104279
申请日：2013-12-12
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Pi-Tsung CHEN , Ming-Hui CHIH , Ken-Hsien HSIEH , Wei-Long WANG , Wen-Chun HUANG , Ru-Gun LIU , Tsai-Sheng GAU , Wen-Ju YANG , Gwan Sin CHANG , Yung-Sung YEN
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A method includes determining one or more potential merges corresponding to a color set Ai and a color set Aj of N color sets, represented by A1 to AN, used in coloring polygons of a layout of an integrated circuit. N is a positive integer, i and j are integers from 1 to N, and i≠j. One or more potential cuts corresponding to the color set Ai and the second color set Aj are determined. An index Aij is determined according to the one or more potential merges and the one or more potential cuts. A plurality of parameters F related to the index Aij is obtained based on various values of indices fi and fj. A parameter F is selected among the plurality of parameters F based on a definition of the index Aij.
摘要翻译：一种方法包括确定一个或多个与集成电路的布局的着色多边形中使用的颜色集合Ai和由A 1到AN表示的颜色集合A 1对应的潜在合并。 N是正整数，i和j是从1到N的整数，i≠j。确定对应于颜色集合Ai和第二颜色集合Aj的一个或多个可能的剪切。根据一个或多个潜在的合并和一个或多个潜在的切割来确定索引Aij。基于索引fi和fj的各种值获得与索引Aij有关的多个参数F。基于索引Aij的定义，在多个参数F中选择参数F.

10. 发明公开

US20230305381A1 EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20230305381A1
公开(公告)日：2023-09-28
申请号：US17833823
申请日：2022-06-06
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Wei-Shuo SU , Yu-Tse LAI , Sheng-Min WANG , Ken-Hsien HSIEH , Chieh-Jen CHENG , Ya Hui CHANG
IPC分类号： G03F1/24 , G03F1/42
CPC分类号： G03F1/24 , G03F1/42
摘要： A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式