基本信息:
- 专利标题： METHOD OF MANUFACTURING PHOTO MASKS
- 申请号：US18114845 申请日：2023-02-27
- 公开(公告)号：US20230205093A1 公开(公告)日：2023-06-29
- 发明人： Ken-Hsien HSIEH , Ru-Gun LIU , Wei-Shuo SU
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 分案原申请号： US15966962 2018.04.30
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; H01L21/311 ; G03F1/36 ; G03F1/70 ; G06F30/398
摘要：
In a method of manufacturing a photo mask used in a semiconductor manufacturing process, a mask pattern layout in which a plurality of patterns are arranged is acquired. The plurality of patterns are converted into a graph having nodes and links. It is determined whether the nodes are colorable by N colors without causing adjacent nodes connected by a link to be colored by a same color, where N is an integer equal to or more than 3. When it is determined that the nodes are colorable by N colors, the nodes are colored with the N colors. The plurality of patterns are classified into N groups based on the N colored nodes. The N groups are assigned to N photo masks. N data sets for the N photo masks are output.