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1. 发明申请

US20160366756A1 METHOD FOR EUV POWER IMPROVEMENT WITH FUEL DROPLET TRAJECTORY STABILIZATION 有权
标题翻译：用于燃油喷射轨道稳定的EUV功率改进方法
公开(公告)号：US20160366756A1
公开(公告)日：2016-12-15
申请号：US14736322
申请日：2015-06-11
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Tsiao-Chen Wu , Jaw-Jung Shin
IPC分类号： H05G2/00 , G03F7/20
CPC分类号： H05G2/005 , G03F7/70033 , H05G2/006 , H05G2/008
摘要： The present disclosure relates to an extreme ultraviolet (EUV) radiation source that generates charged tin droplets having a trajectory controlled by an electromagnetic field, and an associated method. In some embodiments, the EUV radiation source has a laser that generates a laser beam. A charged fuel droplet generator provides a plurality of charged fuel droplets having a net electrical charge to an EUV source vessel. An electromagnetic field generator generates an electric field and/or a magnetic field. The net electrical charge of the charged fuel droplets causes the electric or magnetic field to generate a force on the charged fuel droplets that controls a trajectory of the charged fuel droplets to intersect the laser beam. By using the electric or magnetic field to control a trajectory of the charged fuel droplets, the EUV system is able to avoid focus issues between the laser beam and the charged fuel droplets.
摘要翻译：本公开涉及产生具有由电磁场控制的轨迹的带电的锡液滴的极紫外（EUV）辐射源，以及相关联的方法。在一些实施例中，EUV辐射源具有产生激光束的激光。带电燃料液滴发生器为EUV源容器提供具有净电荷的多个带电燃料液滴。电磁场发生器产生电场和/或磁场。带电燃料液滴的净电荷导致电场或磁场在带电的燃料液滴上产生一个力，其控制带电燃料液滴与激光束相交的轨迹。通过使用电场或磁场来控制带电燃料液滴的轨迹，EUV系统能够避免激光束和带电燃料液滴之间的焦点问题。

2. 发明授权

US08988652B2 Method and apparatus for ultraviolet (UV) patterning with reduced outgassing 有权
标题翻译：减少放气的紫外（UV）图案化方法和设备
公开(公告)号：US08988652B2
公开(公告)日：2015-03-24
申请号：US13654750
申请日：2012-10-18
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Shu-Hao Chang , Tsiao-Chen Wu , Chia-Hao Hsu , Chia-Chen Chen , Ying-Yu Chen , Tzu-Li Lee , Shang-Chieh Chien , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F7/20
CPC分类号： G03F7/2002 , G03F7/20 , G03F7/70916 , G03F7/70933
摘要： A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.
摘要翻译：提供了紫外线（UV）和极紫外（EUV）光刻图案的方法和装置。产生UV或EUV光束并将其引导到设置在载物台上并涂覆有光致抗蚀剂的基板的表面。惰性气体层的层流被引导穿过并且紧邻在曝光期间涂覆有光致抗蚀剂的基底表面，即光刻操作。惰性气体迅速耗尽并且在曝光位置包括短的共振时间。惰性气体流动防止烟气和其它由光致抗蚀剂脱气产生的污染物沉淀并污染光刻设备的其它特征。

3. 发明授权

US11630386B2 Reflective mask and fabricating method thereof 有权
公开(公告)号：US11630386B2
公开(公告)日：2023-04-18
申请号：US17579433
申请日：2022-01-19
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Tsiao-Chen Wu , Pei-Cheng Hsu
IPC分类号： G03F1/24 , G03F1/80 , G03F1/40
摘要： The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.

4. 发明授权

US11243461B2 Reflective mask and fabricating method thereof 有权
公开(公告)号：US11243461B2
公开(公告)日：2022-02-08
申请号：US16656227
申请日：2019-10-17
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Tsiao-Chen Wu , Pei-Cheng Hsu
IPC分类号： G03F1/24 , G03F1/80 , G03F1/40
摘要： A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.

5. 发明授权

US10310380B2 High-brightness light source 有权
公开(公告)号：US10310380B2
公开(公告)日：2019-06-04
申请号：US15632500
申请日：2017-06-26
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Tsiao-Chen Wu , Chun-Lin Louis Chang
IPC分类号： G03F7/20 , H05G2/00
摘要： A method for generating high-brightness light sources is provided. The method includes introducing a gaseous material into the target material. The method further includes supplying the target material into a fuel target generator. The method also includes generating targets by forcing the target material with the gaseous material out of the fuel target generator. In addition, the method includes expanding the gaseous material in the targets to transform the targets to target mists. The method also includes focusing a main pulse laser on the target mists to generate plasma emitting high-brightness light.

6. 发明授权

US09847302B2 Wafer surface conditioning for stability in fab environment 有权
公开(公告)号：US09847302B2
公开(公告)日：2017-12-19
申请号：US13974246
申请日：2013-08-23
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Tsiao-Chen Wu , Fang Lin
IPC分类号： H01L23/58 , H01L23/00 , H01L23/31 , H01L21/027 , H01L21/306 , H01L21/308
CPC分类号： H01L23/564 , H01L21/027 , H01L21/306 , H01L21/3081 , H01L23/3171 , H01L2924/0002 , H01L2924/00
摘要： Hydroxyl moieties are formed on a surface over a semiconductor substrate. The surfaces are silylized to replace the hydroxyl groups with silyl ether groups, the silyl ether groups being of the form: —OSiR1R2R3, where R1, R2, and R3 are each hydrocarbyl groups comprising at least one carbon atom. Silylation protects the wafers from forming defects through hydrolysis while the wafers are being transported or stored under ambient conditions.

7. 发明授权

US09538628B1 Method for EUV power improvement with fuel droplet trajectory stabilization 有权
标题翻译：具有燃料液滴轨迹稳定的EUV功率改进方法
公开(公告)号：US09538628B1
公开(公告)日：2017-01-03
申请号：US14736322
申请日：2015-06-11
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Tsiao-Chen Wu , Jaw-Jung Shin
IPC分类号： H05G2/00 , G03F7/20
CPC分类号： H05G2/005 , G03F7/70033 , H05G2/006 , H05G2/008
摘要： The present disclosure relates to an extreme ultraviolet (EUV) radiation source that generates charged tin droplets having a trajectory controlled by an electromagnetic field, and an associated method. In some embodiments, the EUV radiation source has a laser that generates a laser beam. A charged fuel droplet generator provides a plurality of charged fuel droplets having a net electrical charge to an EUV source vessel. An electromagnetic field generator generates an electric field and/or a magnetic field. The net electrical charge of the charged fuel droplets causes the electric or magnetic field to generate a force on the charged fuel droplets that controls a trajectory of the charged fuel droplets to intersect the laser beam. By using the electric or magnetic field to control a trajectory of the charged fuel droplets, the EUV system is able to avoid focus issues between the laser beam and the charged fuel droplets.
摘要翻译：本公开涉及产生具有由电磁场控制的轨迹的带电的锡液滴的极紫外（EUV）辐射源，以及相关联的方法。在一些实施例中，EUV辐射源具有产生激光束的激光。带电燃料液滴发生器为EUV源容器提供具有净电荷的多个带电燃料液滴。电磁场发生器产生电场和/或磁场。带电燃料液滴的净电荷导致电场或磁场在带电的燃料液滴上产生力，其控制带电燃料液滴与激光束相交的轨迹。通过使用电场或磁场来控制带电燃料液滴的轨迹，EUV系统能够避免激光束和带电燃料液滴之间的焦点问题。

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