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    • 10. 发明申请
    • METHOD OF FORMING SEMICONDUCTOR DEVICES USING SMT
    • 使用SMT形成半导体器件的方法
    • US20130109186A1
    • 2013-05-02
    • US13662277
    • 2012-10-26
    • Wenguang ZHANGQiang XUChunsheng ZhengLingzhi XuYuwen Chen
    • Wenguang ZHANGQiang XUChunsheng ZhengLingzhi XuYuwen Chen
    • H01L21/302
    • H01L21/3105H01L21/823807H01L29/7843H01L29/7847
    • The present invention provides a method of forming semiconductor devices using SMT. The method comprises providing a substrate; depositing an SiO2 buffer film and a low tensile stress SiN film on the substrate; applying photoresist over the low tensile stress SiN film and exposing the low tensile stress SiN film on the NMOS region through photoresist exposure; applying UV radiation to the exposed low tensile stress SiN film; removing some hydrogen in the low tensile stress SiN film on the NMOS region and removing photoresist over the PMOS region; performing a rapid thermal annealing process to induce tensile stress in the NMOS channel region; and removing the SiN film and the SiO2 buffer film. According to the method of forming semiconductor devices using SMT of the present invention, the conventional SMT is greatly simplified.
    • 本发明提供使用SMT形成半导体器件的方法。 该方法包括提供基底; 在衬底上沉积SiO 2缓冲膜和低拉伸应力SiN膜; 在低拉伸应力SiN膜上施加光致抗蚀剂,并通过光致抗蚀剂曝光使NMOS区域上的低拉伸应力SiN膜暴露; 对暴露的低拉伸应力SiN膜施加紫外线辐射; 去除NMOS区域上的低拉伸应力SiN膜中的一些氢,并去除PMOS区域上的光致抗蚀剂; 执行快速热退火工艺以在NMOS沟道区域中引起拉伸应力; 并且去除SiN膜和SiO 2缓冲膜。 根据使用本发明的使用SMT的半导体器件的方法,传统的SMT被大大简化。