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1. 发明授权

US5356830A Semiconductor device and its manufacturing method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5356830A
公开(公告)日：1994-10-18
申请号：US627922
申请日：1990-12-17
申请人： Susumu Yoshikawa , Shuichi Samata , Satoshi Maeda , Shizuo Sawada
发明人： Susumu Yoshikawa , Shuichi Samata , Satoshi Maeda , Shizuo Sawada
IPC分类号： H01L21/20 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/768 , H01L29/43
CPC分类号： H01L21/28525 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/76879
摘要： A semiconductor device and its manufacturing method are provided in which an epitaxial silicon layer is formed by a selective epitaxial growth method over a semiconductor substrate and a polysilicon layer is formed by an ordinary deposition method on the epitaxial silicon layer and these layers and are formed over a semiconductor device in a continuous process within the same furnace for a CVD apparatus.
摘要翻译：提供一种半导体器件及其制造方法，其中在半导体衬底上通过选择性外延生长方法形成外延硅层，并且通过普通沉积方法在外延硅层和这些层上形成多晶硅层在用于CVD设备的同一炉内的连续工艺中的半导体器件。

2. 发明授权

US5187566A Semiconductor memory and method of manufacturing the same 失效
标题翻译：半导体存储器及其制造方法
公开(公告)号：US5187566A
公开(公告)日：1993-02-16
申请号：US646496
申请日：1991-01-28
申请人： Susumu Yoshikawa , Junpei Kumagai , Shizuo Sawada , Yasuo Matsumoto
发明人： Susumu Yoshikawa , Junpei Kumagai , Shizuo Sawada , Yasuo Matsumoto
IPC分类号： H01L23/522 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10829 , H01L27/10835
摘要： In a semiconductor memory of the invention, the source or drain of a transfer gate MOS transistor is electrically connected to a charge storage first conductive layer through a third conductive layer.
摘要翻译：在本发明的半导体存储器中，传输门MOS晶体管的源极或漏极通过第三导电层电连接到电荷存储第一导电层。

3. 发明授权

US4916521A Contact portion of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的接触部分
公开(公告)号：US4916521A
公开(公告)日：1990-04-10
申请号：US223971
申请日：1988-07-25
申请人： Susumu Yoshikawa , Shizuo Sawada
发明人： Susumu Yoshikawa , Shizuo Sawada
IPC分类号： H01L21/768 , H01L23/485
CPC分类号： H01L23/485 , H01L2924/0002
摘要： A first insulation layer is formed on a semiconductor substrate, and a first conductive layer is formed on the first insulation layer. A second insulation layer is formed on the first conductive layer and the first insulation layer, and a first contact hole, having a width greater than that of the first conductive layer, is formed in the second insulation layer, at a position corresponding to the first conductive layer. A second conductive layer, having a width greater than that of the first contact hole, is formed on the second insulation layer and in the first contact hole, and is formed in contact with the upper and side surfaces of the first conductive layer located inside the second contact hole. A third insulation layer is formed on the second conductive layer and the second insulation layer, and a second contact hole, having a width less than that of the second conductive layer, is formed in the third insulation layer, at a position corresponding to the second conductive layer. A third conductive layer, having a width greater than that of the second contact hole but less than that of the second conductive layer, is formed on the third conductive layer and in the second contact hole. The first conductive layer is electrically connected to the third conductive layer.
摘要翻译：在半导体衬底上形成第一绝缘层，在第一绝缘层上形成第一导电层。第二绝缘层形成在第一导电层和第一绝缘层上，并且具有大于第一导电层的宽度的第一接触孔形成在第二绝缘层中的与第一绝缘层相对应的位置处的第一绝缘层导电层。在第二绝缘层和第一接触孔中形成具有大于第一接触孔的宽度的第二导电层，并且形成为与位于第一接触孔内部的第一导电层的上表面和侧表面接触第二接触孔。在第二绝缘层上形成第三绝缘层，第二绝缘层和宽度小于第二导电层宽度的第二接触孔形成在第三绝缘层中，对应于第二绝缘层的第二绝缘层导电层。在第三导电层和第二接触孔中形成具有大于第二接触孔的宽度但小于第二导电层的宽度的第三导电层。第一导电层电连接到第三导电层。

4. 发明申请

US20100043859A1 Composite Comprising Array of Needle-Like Crystal, Method for Producing the Same, Photovoltaic Conversion Element, Light Emitting Element, and Capacitor 有权
标题翻译：针状晶体的复合包含阵列，其制造方法，光电转换元件，发光元件和电容器
公开(公告)号：US20100043859A1
公开(公告)日：2010-02-25
申请号：US11916014
申请日：2006-05-30
申请人： Junji Aranami , Susumu Yoshikawa
发明人： Junji Aranami , Susumu Yoshikawa
IPC分类号： H01L31/042 , H01L33/00 , H01G4/008 , H01G9/04 , B32B3/00 , B32B5/00 , B05D5/12
CPC分类号： H01G9/2036 , C25B1/003 , H01G9/2059 , H01L51/0086 , Y02E10/542 , Y02P70/521 , Y10T428/24612 , Y10T428/249921
摘要： A composite of a base and an array of needle-like crystals formed on a surface of the base is provided, in which the base side and the opposite side to the base with respect to the array can be isolated in a satisfactory manner. A composite 10 contains a transparent electrode 2 serving as the base and an array 4 of needle-like crystals 3 formed thereon. The needle-like crystals 3 are made of, for example, zinc oxide. The array 4 includes a first region R1 on the transparent electrode 2 side and a second region R2 on the opposite side to the transparent electrode 2 with respect to the first region R1. A proportion of the cross section of the needle-like crystals 3 in a plane parallel to the surface of the transparent electrode 2 is lower in the second region R2 than in the first region R1, and the surface of the transparent electrode 2 is substantially covered with the needle-like crystals 3 in the first region R1.
摘要翻译：提供了形成在基体的表面上的针状晶体的基极和阵列的复合体，其中可以以令人满意的方式隔离基极侧和相对于阵列的与基底相反的一侧。复合体10含有作为基材的透明电极2和形成在其上的针状晶体3的阵列4。针状晶体3例如由氧化锌构成。阵列4包括透明电极2侧的第一区域R1和与透明电极2相对于第一区域R1相反一侧的第二区域R2。针状晶体3在与透明电极2的表面平行的平面中的横截面积的比例在第二区域R2中比在第一区域R1中低，并且透明电极2的表面被基本覆盖第一区域R1中的针状晶体3。

5. 发明授权

US4320033A Solid detergent composition 失效
标题翻译：固体洗涤剂组合物
公开(公告)号：US4320033A
公开(公告)日：1982-03-16
申请号：US201837
申请日：1980-10-29
申请人： Susumu Yoshikawa
发明人： Susumu Yoshikawa
IPC分类号： C11D1/72 , C11D1/14 , C11D1/75 , C11D1/83 , C11D17/00
CPC分类号： C11D1/75 , C11D1/83 , C11D17/006
摘要： A solid detergent composition, suitable for use in personal hygiene, having improved slough loss and wear rate characteristics is presented. This solid detergent compositions contains:(A) 40 to 89.9% by weight of at least one linear alpha-olefin sulfonate having 12 to 28 carbon atoms,(B) 10 to 60% by weight of at least one, tertiary amine oxide having general formulae (I) and (II) ##STR1## wherein R.sup.1 represents an alkyl group having 16 to 24 carbon atoms, R.sup.2 represents an alkyl group having 1 to 11 carbon atoms, R.sup.3 represents an alkyl group having 1 to 3 carbon atoms, R.sup.4 and R.sup.5 independently represent an alkyl group having 12 to 24 carbon atoms and R.sup.6 represents an alkyl group having 1 to 3 carbon atoms, and(C) 0.1 to 20% by weight of water.
摘要翻译：提出了一种适用于个人卫生的固体洗涤剂组合物，具有改善的脱落和磨损率特性。该固体洗涤剂组合物包含：（A）40至89.9重量％的至少一种具有12至28个碳原子的直链α-烯烃磺酸盐，（B）10至60重量％的至少一种具有一般性的叔胺氧化物式（I）和（II）其中R 1表示碳原子数为16〜24的烷基，R 2表示碳原子数1〜11的烷基，R 3表示烷基具有1至3个碳原子，R 4和R 5独立地表示具有12至24个碳原子的烷基，R 6表示具有1至3个碳原子的烷基，（C）为0.1至20重量％的水。

6. 发明授权

US07608488B2 Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07608488B2
公开(公告)日：2009-10-27
申请号：US11874481
申请日：2007-10-18
申请人： Yasuyuki Baba , Susumu Yoshikawa
发明人： Yasuyuki Baba , Susumu Yoshikawa
IPC分类号： H01L21/82
CPC分类号： H01L29/42336 , H01L27/0203 , H01L27/105 , H01L27/11526 , H01L27/11543 , H01L27/11546 , H01L29/7881
摘要： A manufacturing method of a semiconductor memory device for manufacturing a first semiconductor device and a second semiconductor device wherein a cell array ratio is smaller than that of the first semiconductor device, said manufacturing method has forming the height of first element-isolating insulating films of first memory cell array region of said first semiconductor device so as to be a predetermined height, by performing etching treatment under predetermined conditions using a first etching mask having a first opening for exposing the entirety of said first memory cell array region, and forming the height of second element-isolating insulating films of second memory cell array region and part of peripheral circuit region of said second semiconductor device so as to be the predetermined height, by performing etching treatment under said predetermined conditions using a second etching mask having a second opening for exposing the entirety of said second memory cell array region and a third opening for exposing part of said peripheral circuit region.
摘要翻译：一种用于制造第一半导体器件的半导体存储器件的制造方法和其中电池阵列比小于第一半导体器件的半导体器件的制造方法，所述制造方法形成第一元件隔离绝缘膜的高度所述第一半导体器件的存储单元阵列区域为预定高度，通过使用具有用于暴露所述第一存储单元阵列区域的整体的第一开口的第一蚀刻掩模在预定条件下进行蚀刻处理，并且形成第二存储单元阵列区域的第二元件隔离绝缘膜和所述第二半导体器件的外围电路区域的一部分以预定高度，通过使用具有用于曝光的第二开口的第二蚀刻掩模在所述预定条件下进行蚀刻处理所述第二存储单元阵列区域的整体a d用于暴露所述外围电路区域的一部分的第三开口。

7. 发明申请

US20070012989A1 Nonvolatile semiconductor memory and fabrication method for the same 失效
标题翻译：非易失性半导体存储器及其制造方法相同
公开(公告)号：US20070012989A1
公开(公告)日：2007-01-18
申请号：US11342524
申请日：2006-01-31
申请人： Susumu Yoshikawa
发明人： Susumu Yoshikawa
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , G11C16/0408 , H01L27/115 , H01L27/11519
摘要： A nonvolatile semiconductor memory includes a first and a second active area configured to extend in the column direction in parallel; an element isolating region configured to electrically separate the first and the second active area; a plurality of word lines configured to extend in the row direction and be constituted by respective main parts and respective ends; and a plurality of memory cell transistors configured to be disposed on intersections between the respective main parts of the plurality of word lines and the second active area. Each memory cell transistor comprises a gate insulating film, a floating gate electrode, an inter-gate insulating film, and a control gate electrode, constituting a memory cell array; a short-circuit region configured to electrically short circuit the ends of the plurality of word lines; and a trench configured to separate the ends from the main parts of the plurality of word lines.
摘要翻译：非易失性半导体存储器包括被配置为在列方向上并行延伸的第一和第二有源区域; 元件隔离区域，被配置为电分离第一和第二有源区域; 多个字线，被构造成在行方向上延伸并由相应的主要部分和相应的端部构成; 以及多个存储单元晶体管，被配置为设置在所述多个字线的各个主要部分和所述第二有效区域之间的交叉点上。每个存储单元晶体管包括构成存储单元阵列的栅绝缘膜，浮栅电极，栅极间绝缘膜和控制栅电极; 短路区域，被配置为使多个字线的端部电短路; 以及沟槽，其被配置为将端部与多个字线的主要部分分开。

8. 发明授权

US07732854B2 Nonvolatile semiconductor memory and fabrication method for the same 失效
标题翻译：非易失性半导体存储器及其制造方法相同
公开(公告)号：US07732854B2
公开(公告)日：2010-06-08
申请号：US11984489
申请日：2007-11-19
申请人： Susumu Yoshikawa
发明人： Susumu Yoshikawa
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , G11C16/0408 , H01L27/115 , H01L27/11519
摘要： A nonvolatile semiconductor memory includes a first and a second active area configured to extend in the column direction in parallel; an element isolating region configured to electrically separate the first and the second active area; a plurality of word lines configured to extend in the row direction and be constituted by respective main parts and respective ends; and a plurality of memory cell transistors configured to be disposed on intersections between the respective main parts of the plurality of word lines and the second active area. Each memory cell transistor comprises a gate insulating film, a floating gate electrode, an inter-gate insulating film, and a control gate electrode, constituting a memory cell array; a short-circuit region configured to electrically short circuit the ends of the plurality of word lines; and a trench configured to separate the ends from the main parts of the plurality of word lines.
摘要翻译：非易失性半导体存储器包括被配置为在列方向上并行延伸的第一和第二有源区域; 元件隔离区域，被配置为电分离第一和第二有源区域; 多个字线，被构造成在行方向上延伸并由相应的主要部分和相应的端部构成; 以及多个存储单元晶体管，被配置为设置在所述多个字线的各个主要部分和所述第二有效区域之间的交叉点上。每个存储单元晶体管包括构成存储单元阵列的栅绝缘膜，浮栅电极，栅极间绝缘膜和控制栅电极; 短路区域，被配置为使多个字线的端部电短路; 以及沟槽，其被配置为将端部与多个字线的主要部分分开。

9. 发明申请

US20080258201A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20080258201A1
公开(公告)日：2008-10-23
申请号：US11874481
申请日：2007-10-18
申请人： Yasuyuki BABA , Susumu Yoshikawa
发明人： Yasuyuki BABA , Susumu Yoshikawa
IPC分类号： H01L29/788 , H01L21/3065
CPC分类号： H01L29/42336 , H01L27/0203 , H01L27/105 , H01L27/11526 , H01L27/11543 , H01L27/11546 , H01L29/7881
摘要： A manufacturing method of a semiconductor memory device for manufacturing a first semiconductor device and a second semiconductor device wherein a cell array ratio is smaller than that of the first semiconductor device, said manufacturing method has forming the height of first element-isolating insulating films of first memory cell array region of said first semiconductor device so as to be a predetermined height, by performing etching treatment under predetermined conditions using a first etching mask having a first opening for exposing the entirety of said first memory cell array region, and forming the height of second element-isolating insulating films of second memory cell array region and part of peripheral circuit region of said second semiconductor device so as to be the predetermined height, by performing etching treatment under said predetermined conditions using a second etching mask having a second opening for exposing the entirety of said second memory cell array region and a third opening for exposing part of said peripheral circuit region.
摘要翻译：一种用于制造第一半导体器件的半导体存储器件的制造方法和其中电池阵列比小于第一半导体器件的半导体器件的制造方法，所述制造方法形成第一元件隔离绝缘膜的高度所述第一半导体器件的存储单元阵列区域为预定高度，通过使用具有用于暴露所述第一存储单元阵列区域的整体的第一开口的第一蚀刻掩模在预定条件下进行蚀刻处理，第二存储单元阵列区域的第二元件隔离绝缘膜和所述第二半导体器件的外围电路区域的一部分以预定高度，通过使用具有用于曝光的第二开口的第二蚀刻掩模在所述预定条件下进行蚀刻处理所述第二存储单元阵列区域的整体a d用于暴露所述外围电路区域的一部分的第三开口。

10. 发明授权

US07298005B2 Nonvolatile semiconductor memory and fabrication method for the same 失效
公开(公告)号：US07298005B2
公开(公告)日：2007-11-20
申请号：US11342524
申请日：2006-01-31
申请人： Susumu Yoshikawa
发明人： Susumu Yoshikawa
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , G11C16/0408 , H01L27/115 , H01L27/11519
摘要： A nonvolatile semiconductor memory includes a first and a second active area configured to extend in the column direction in parallel; an element isolating region configured to electrically separate the first and the second active area; a plurality of word lines configured to extend in the row direction and be constituted by respective main parts and respective ends; and a plurality of memory cell transistors configured to be disposed on intersections between the respective main parts of the plurality of word lines and the second active area. Each memory cell transistor comprises a gate insulating film, a floating gate electrode, an inter-gate insulating film, and a control gate electrode, constituting a memory cell array; a short-circuit region configured to electrically short circuit the ends of the plurality of word lines; and a trench configured to separate the ends from the main parts of the plurality of word lines.

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