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1. 发明授权

US4534821A Single crystal growing of rare earth-gallium garnet 失效
标题翻译：稀土镓石榴石的单晶生长
公开(公告)号：US4534821A
公开(公告)日：1985-08-13
申请号：US503837
申请日：1983-06-13
申请人： Susumu Sakaguchi , Ken Itoh , Masahiro Ogihara , Shinji Makigawa , Toshihiko Ryuo , Kazuyoshi Watanabe
发明人： Susumu Sakaguchi , Ken Itoh , Masahiro Ogihara , Shinji Makigawa , Toshihiko Ryuo , Kazuyoshi Watanabe
IPC分类号： C30B15/00 , C30B29/28 , C30B15/14
CPC分类号： C30B15/00 , C30B29/28 , Y10S117/90 , Y10S117/906
摘要： An improvement in the Czochralski single crystal growing of a rare earth-gallium garnet such as gadolinium gallium garnet according to which the single crystal boules of a relatively large diameter and outstandingly free from any crystal defects and inclusions are readily obtained. The improved method comprises keeping the melt of the oxide mixture formed in an iridium crucible for at least 15 hours in the molten state before crystal growing is started. It was also shown that addition of certain additive gases, e.g. water vapor, carbon dioxide and oxygen, to the gaseous atmosphere mainly composed of, for example, nitrogen, in which crystal growing was performed, in a limited proportion was effective to further improve the crystal quality and to decrease the particulate inclusions in the single crystal boules.
摘要翻译：稀土镓石榴石如钆镓石榴石的切克拉斯基单晶生长的改进，根据该方法，容易获得具有较大直径且显着不含任何晶体缺陷和夹杂物的单晶晶粒。改进的方法包括在晶体生长开始之前将形成在铱坩埚中的氧化物混合物的熔体在熔融状态下保持至少15小时。还显示加入某些添加气体，例如，水蒸汽，二氧化碳和氧气以主要由例如氮气组成的气态气体以有限的比例进行结晶生长有利于进一步提高晶体质量并降低单晶中的颗粒夹杂物牛仔裤

2. 发明授权

US4483734A Method for the preparation of single crystals of gadolinium gallium garnet 失效
标题翻译：钆镓石榴石单晶的制备方法
公开(公告)号：US4483734A
公开(公告)日：1984-11-20
申请号：US485903
申请日：1983-04-18
申请人： Susumu Sakaguchi , Kazuyoshi Watanabe , Masahiro Ogihara , Toshihiko Ryuoh , Masaaki Iguchi , Norifumi Yoshida
发明人： Susumu Sakaguchi , Kazuyoshi Watanabe , Masahiro Ogihara , Toshihiko Ryuoh , Masaaki Iguchi , Norifumi Yoshida
IPC分类号： C30B15/00 , C30B15/04
CPC分类号： C30B15/00 , C30B29/28
摘要： In the crystal growing of GGG (gadolinium gallium garnet) by the Czochralski technique from a melt of the oxide mixture of gadolinium and gallium, zinc is added to the oxide melt as a dopant element in a limited amount so that the danger of crack formation in the grown single crystals can be greatly decreased contributing to the improvement of the productivity. Moreover, the GGG single crystal grown with zinc doping has remarkably reduced light absorption in the wavelength region of around 300 nm responsible to the yellowish tint of the crystals.
摘要翻译：在钆和镓的氧化物混合物的熔融物中通过切克劳斯基技术从GGG（钆镓石榴石）中生长晶体，将锌作为掺杂剂元素以有限的量添加到氧化物熔体中，使得形成裂纹的危险生长的单晶可以大大降低有助于提高生产率。此外，用锌掺杂生长的GGG单晶在大约300nm的波长区域中显着降低了对结晶的淡黄色的影响。

3. 发明申请

US20130059046A1 INSTANT NOODLES AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：即将生产的阳极及其制造方法
公开(公告)号：US20130059046A1
公开(公告)日：2013-03-07
申请号：US13697116
申请日：2011-03-22
申请人： Tatsuo Yamaya , Takuo Nakazeko , Rippei Shikota , Koshi Minamitani , Susumu Sakaguchi , Mitsuru Tanaka
发明人： Tatsuo Yamaya , Takuo Nakazeko , Rippei Shikota , Koshi Minamitani , Susumu Sakaguchi , Mitsuru Tanaka
IPC分类号： A23L1/162
CPC分类号： A23L1/162 , A23L7/113 , A23P20/11
摘要： The present invention obtains instant noodles which do not cause sticking and are easily loosened. Especially, the present invention provides an instant noodles producing method capable of preventing the sticking of the noodle strings even when the noodle strings are straight-type noodles. In a production process of the instant noodles, powdered oil is applied to the surface of a dough sheet or the surfaces of the noodle strings before steaming. Especially, after the powdered oil is applied to the dough sheet. the dough sheet is rolled out once or more. With this, the powdered oil is firmly fixed to the surfaces of the noodle strings. Thus, an extremely high sticking preventing effect can be obtained by an extremely small amount of the powdered oil.
摘要翻译：本发明得到不会发生粘附并容易松动的方便面。特别地，本发明提供即使在面条是直型面条时也能够防止面条粘着的方便面制作方法。在方便面的生产过程中，在蒸制前将粉状油施加到面片的表面或面条的表面。特别是，将粉末油涂于面片上之后。将面片卷出一次以上。这样，粉状油被牢固地固定在面条的表面上。因此，通过极少量的粉末油可以获得极高的防止粘附效果。

4. 发明授权

US5667585A Method for the preparation of wire-formed silicon crystal 失效
标题翻译：线形硅晶体的制备方法
公开(公告)号：US5667585A
公开(公告)日：1997-09-16
申请号：US579350
申请日：1995-12-27
申请人： Tsuguo Fukuda , Susumu Sakaguchi , Tadashi Kamioka , Toru Yamada , Teruhiko Hirasawa
发明人： Tsuguo Fukuda , Susumu Sakaguchi , Tadashi Kamioka , Toru Yamada , Teruhiko Hirasawa
IPC分类号： C30B13/00 , C30B15/00 , C30B28/08
CPC分类号： C30B29/06 , C30B13/00 , C30B15/00
摘要： Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.
摘要翻译：提出了一种低成本的制备直径为1mm以下的硅线状晶体的低成本方法，其中通过高频感应加热在一端部将垂直保持的硅起始棒熔化，使晶种与熔融部分接触，然后晶体和起始硅棒以受控的高频功率输入以受控的速度在垂直方向上拉开，使得由晶种吸收的硅熔体被固化并结晶成线的形式。

5. 发明授权

US08993029B2 Instant noodles and method for producing the same 有权
标题翻译：方便面及其制作方法
公开(公告)号：US08993029B2
公开(公告)日：2015-03-31
申请号：US13697116
申请日：2011-03-22
申请人： Tatsuo Yamaya , Takuo Nakazeko , Rippei Shikota , Koshi Minamitani , Susumu Sakaguchi , Mitsuru Tanaka
发明人： Tatsuo Yamaya , Takuo Nakazeko , Rippei Shikota , Koshi Minamitani , Susumu Sakaguchi , Mitsuru Tanaka
IPC分类号： A23L1/162 , A23L1/00
CPC分类号： A23L1/162 , A23L7/113 , A23P20/11
摘要： The present invention obtains instant noodles which do not cause sticking and are easily loosened. Especially, the present invention provides an instant noodles producing method capable of preventing the sticking of the noodle strings even when the noodle strings are straight-type noodles. In a production process of the instant noodles, powdered oil is applied to the surface of a dough sheet or the surfaces of the noodle strings before steaming. Especially, after the powdered oil is applied to the dough sheet, the dough sheet is rolled out once or more. With this, the powdered oil is firmly fixed to the surfaces of the noodle strings. Thus, an extremely high sticking preventing effect can be obtained by an extremely small amount of the powdered oil.
摘要翻译：本发明得到不会发生粘附并容易松动的方便面。特别地，本发明提供即使在面条是直型面条时也能够防止面条粘着的方便面制作方法。在方便面的生产过程中，在蒸制前将粉状油施加到面片的表面或面条的表面。特别是，将粉状油涂布在面片上之后，将面片卷起一次以上。这样，粉状油被牢固地固定在面条的表面上。因此，通过极少量的粉末油可以获得极高的防止粘附效果。

6. 发明授权

US5431741A Silicon solar cell 失效
标题翻译：硅太阳能电池
公开(公告)号：US5431741A
公开(公告)日：1995-07-11
申请号：US166384
申请日：1993-12-13
申请人： Susumu Sakaguchi , Toru Yamada , Tadashi Kamioka , Teruhiko Hirasawa
发明人： Susumu Sakaguchi , Toru Yamada , Tadashi Kamioka , Teruhiko Hirasawa
IPC分类号： H01L31/0224 , H01L31/0352 , H01L31/042 , H01L31/05
CPC分类号： H01L31/035281 , H01L31/022433 , Y02E10/50
摘要： A novel structure of a silicon solar cell is disclosed, which can be prepared at an outstandingly low cost but can still exhibit good efficiency for the conversion of solar energy to electricity. The silicon solar cell comprises, as an integral body:(a) an electrically insulating substrate plate of, e.g., glass or a ceramic;(b1) a first group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as an electrode; (b2) a second group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as a counterelectrode, each of the metal contact lines of the second group being disposed between two metal contact lines of the first group, maintaining electric insulation therebetween; and(c) a plural number of wires of silicon semiconductor, each of which perpendicularly crosses each of the metal contact lines of the first and second groups in direct contact therewith. When the silicon semiconductor is of the n-type, for example, and has discrete p-type regions which are in contact with the metal contact lines of one of the groups, photovoltaic power is generated between the electrodes under irradiation with sunlight. An alternative arrangement of the silicon semiconductor wires is also proposed in which each of the silicon wires bridges a metal contact line of the first group and a metal contact line of the second group in lengthwise contact therewith.
摘要翻译：公开了一种硅太阳能电池的新型结构，其可以以非常低的成本制备，但仍然可以显示出将太阳能转换成电的良好效率。硅太阳能电池包括作为一体的主体：（a）例如玻璃或陶瓷的电绝缘基板; （b1）在基板表面上彼此平行地形成的第一组金属接触线，以共同地用作电极; （b2）在基板表面上彼此平行地形成的第二组金属接触线，以共同用作反电极，第二组的每个金属接触线设置在第一组的两个金属接触线之间，保持电绝缘; 和（c）多个数量的硅半导体的导线，其中的每一个与第一和第二组的金属接触线的每一个垂直地交叉直接接触。例如，当硅半导体为n型时，具有与这些组中的一个的金属接触线接触的离散p型区域，在阳光照射下在电极之间产生光伏电力。还提出了硅半导体布线的替代布置，其中每个硅线桥接第一组的金属接触线和第二组的金属接触线与其纵向接触。

7. 发明授权

US4215008A Rare earth-containing alloys and method for purification of hydrogen gas therewith 失效
标题翻译：含稀土合金及其氢气净化方法
公开(公告)号：US4215008A
公开(公告)日：1980-07-29
申请号：US919715
申请日：1978-06-27
申请人： Zenzi Hagiwara , Sigeo Matsui , Susumu Sakaguchi , Yoshio Yamanaka
发明人： Zenzi Hagiwara , Sigeo Matsui , Susumu Sakaguchi , Yoshio Yamanaka
IPC分类号： C01B3/50 , C22C19/00 , B01D15/08
CPC分类号： C22C19/00 , C01B3/508 , Y10S420/90
摘要： An efficient and economical method for the purification of hydrogen gas is proposed by use of an alloy of a rare earth metal with nickel and/or cobalt plus, optionally, iron, copper or chromium, utilizing the great selectivity of the alloy for the adsorption of hydrogen gas with very little adsorptivity for impurity gases commonly found in an impure hydrogen gas. The purification process is carried out by the pressurized adsorption of hydrogen on the alloy powder, followed by the recovery of high-purity hydrogen gas released from the alloy under reduced pressure or by heating. The alloy in the form of powder is preferably activated prior to use by repeated adsorption-desorption cycles of hydrogen on and from the alloy powder.
摘要翻译：通过使用稀土金属与镍和/或钴加任选的铁，铜或铬的合金，利用合金的极大的选择性来吸附氢，提出了一种高效和经济的氢气净化方法对于在不纯的氢气中通常发现的杂质气体，氢气具有非常小的吸附性。净化过程是通过对合金粉末上的氢气进行加压吸附，然后在减压或加热下从合金中回收高纯度氢气。粉末形式的合金优选在使用之前通过在合金粉末上和从合金粉末上重复的吸附 - 解吸循环而被活化。

8. 发明授权

US4154364A Thermally insulating containers for liquefied gases 失效
标题翻译：液化气绝热容器
公开(公告)号：US4154364A
公开(公告)日：1979-05-15
申请号：US753689
申请日：1976-12-23
申请人： Zenji Hagiwara , Sigeo Matsui , Yamanaka, Yoshio , Akira Kamei , Susumu Sakaguchi
发明人： Zenji Hagiwara , Sigeo Matsui , Yamanaka, Yoshio , Akira Kamei , Susumu Sakaguchi
IPC分类号： C01B3/00 , F17C3/08 , B65D25/18
CPC分类号： F17C3/08 , C01B3/0057 , F17C2203/018 , Y02E60/321 , Y02E60/327 , Y10S420/90
摘要： Thermally insulating containers or the Dewar containers useful for shipping and storage of low-temperature liquefied gases, having double walls made of a metal, the space between the walls being evacuated, are provided, the thermal insulation properties of which are prevented from deterioration by putting in the vacuum space, a getter alloy composed of a ternary alloy expressed by the formula LaNi.sub.x Cr.sub.y, where x is a number from 1 to 6, both inclusive and y is a number from 0.1 to 2, both inclusive, working to adsorb traces of hydrogen coming out of the wall material. The alloy is preferably an activated one. The vacuum thermal insulation can further be improved by the presence of an adsorbent having a large specific area which serves to adsorb traces of gases other than hydrogen.
摘要翻译：隔热容器或杜瓦容器可用于运输和储存低温液化气体，具有由金属制成的双层壁，壁之间的空间被抽真空，其绝热性能通过放置防止其劣化在真空空间中，由由式LaNixCry表示的三元合金组成的吸气剂合金，其中x为1至6的数，包括端值，y为0.1至2的数字，包括两端，用于吸附痕量的氢从墙壁材料出来。该合金优选是活化的。通过存在用于吸附除了氢以外的痕量气体的比表面积大的吸附剂，可进一步提高真空热绝缘。

9. 发明授权

US4755314A Single crystal wafer of lithium tantalate 失效
标题翻译：钽酸锂单晶晶片
公开(公告)号：US4755314A
公开(公告)日：1988-07-05
申请号：US804188
申请日：1985-12-03
申请人： Susumu Sakaguchi , Masaaki Iguchi
发明人： Susumu Sakaguchi , Masaaki Iguchi
IPC分类号： H03H9/17 , C30B33/00 , H01L41/18 , C01G35/00 , C30B15/00 , H01L41/22
CPC分类号： C30B33/00 , C30B29/30 , H01L2223/54493
摘要： The x-cut single crystal wafer of lithium tantalate according to the invention is characterized by the orientation flat formed in a specific crystallographic orientation. The plane of the orientation flat should be (A) in parallel with the (018) plane or a plane which is in parallel with the x-axis and makes an angle of 15.degree. or smaller with the (018) plane or (B) in parallel with a plane which is in parallel with the x-axis and perpendicular to the (018) plane or a plane which is in parallel with the x-axis and makes an angle of 15.degree. or smaller with the plane which is in parallel with the x-axis and perpendicular to the (018) plane. In contrast to conventional lithium tantalate single crystal wafers provided with an orientation flat in a direction parallel to the 112.degree. Y direction, the location of the crystallographic orientation of the orientation flat is very easy and consequently great advantages are obtained in the working efficiency of locating the direction of the orientation flat and improved quality as well as increased yield of acceptable devices, e.g. SAW filters, prepared from the wafers.
摘要翻译：根据本发明的钽酸锂的x切割单晶晶片的特征在于以特定的晶体取向形成的取向平面。取向平面的平面应为与（018）平面平行的（A）平面或与x轴平行的平面，与（018）面成15度或更小的平面或（B）平行于与x轴平行且垂直于（018）平面的平面或与x轴平行的平面，并且与平行的平面成15度或更小的平面与x轴垂直于（018）平面。与常规的钽酸锂单晶晶片相比，在平行于112°Y方向的方向上具有取向平坦的方向，取向平面的晶体取向的位置非常容易，因此在定位的工作效率方面获得了很大的优点取向平坦的方向和改善的质量以及可接受的装置的增加的产量，例如 SAW滤波器，由晶圆制成。

10. 发明授权

US4412886A Method for the preparation of a ferroelectric substrate plate 失效
标题翻译：铁电基板的制备方法
公开(公告)号：US4412886A
公开(公告)日：1983-11-01
申请号：US481823
申请日：1983-04-04
申请人： Susumu Sakaguchi , Kenichi Taguchi , Masaaki Iguchi , Kunihiro Ito
发明人： Susumu Sakaguchi , Kenichi Taguchi , Masaaki Iguchi , Kunihiro Ito
IPC分类号： H03H3/08 , C30B33/00 , C30B33/10 , H01B3/00 , H01L21/00 , H01L21/304 , H01L41/22 , B44C1/22 , C03C15/00 , C03C25/06 , H01L21/306
CPC分类号： H01L21/67092 , H01L41/335 , H01L41/1873 , H01L41/41
摘要： The invention provides a method for surface-finishing of a single crystal wafer of a ferroelectric material into a substrate plate suitable for use, for example, as a SAW filter element which is mirror-polished only on one of the surfaces, the other surface having an adequate roughness. Different from conventional methods, the inventive method comprises the successive steps of (a) slicing a single crystal boule into wafers, (b) lapping of the wafer on both surfaces to impart adequate roughness to the surfaces, (c) chemically etching the thus lapped surfaces to remove the strain produced in the preceding mechanical working, and (d) mirror-polishing one of the thus etched surfaces so that high uniformity of the thickness and greatly decreased warping of the wafer can be ensured.
摘要翻译：本发明提供了一种用于将铁电材料的单晶晶片表面精加工成衬底板的方法，该衬底板适用于例如仅在一个表面上被镜面抛光的SAW滤波器元件，另一个表面具有足够的粗糙度。本发明的方法包括以下连续步骤：（a）将单晶晶片切成晶片，（b）在两个表面上研磨晶片以赋予表面足够的粗糙度，（c）化学蚀刻如此重叠的表面以去除在前面的机械加工中产生的应变，以及（d）对这样蚀刻的表面之一进行镜面抛光，从而可以确保厚度的均匀性和晶片的翘曲大大降低。

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