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1. 发明申请

US20120015508A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120015508A1
公开(公告)日：2012-01-19
申请号：US13242789
申请日：2011-09-23
申请人： Shinya IWASAKI , Akira KAMEI
发明人： Shinya IWASAKI , Akira KAMEI
IPC分类号： H01L21/22
CPC分类号： H01L29/861 , H01L21/263 , H01L21/266 , H01L21/761 , H01L27/0727 , H01L29/32 , H01L29/7397
摘要： Provided is a method of manufacturing a semiconductor device capable of preventing a relative displacement of the positions between a range where impurity ions are injected and a range where charged particles are injected. The method of manufacturing the semiconductor device includes: irradiating impurity ions in a state in which a mask is disposed between an impurity ion irradiation apparatus and a semiconductor substrate; and irradiating charged particles to form a short carrier lifetime region, in a state in which the mask is disposed between a charged particle irradiation apparatus and the semiconductor substrate. A relative positional relationship between the mask and the semiconductor substrate is not changed from a beginning of one of the irradiating the impurity ions and the irradiating the charged particles to a completion of both of the irradiating the impurity ions and the irradiating the charged particles.
摘要翻译：提供一种制造能够防止在注入杂质离子的范围之间的位置与注入带电粒子的范围之间的位置的相对位移的半导体器件的方法。半导体装置的制造方法包括：在杂质离子照射装置和半导体基板之间设置掩模的状态下照射杂质离子; 并且在掩模设置在带电粒子照射装置和半导体基板之间的状态下照射带电粒子以形成短的载流子寿命区域。掩模和半导体衬底之间的相对位置关系从照射杂质离子和照射带电粒子之一开始到完全照射杂质离子并照射带电粒子之后不会改变。

2. 发明授权

US08334193B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08334193B2
公开(公告)日：2012-12-18
申请号：US13242789
申请日：2011-09-23
申请人： Shinya Iwasaki , Akira Kamei
发明人： Shinya Iwasaki , Akira Kamei
IPC分类号： H01L21/20 , H01L21/425 , H01L21/04
CPC分类号： H01L29/861 , H01L21/263 , H01L21/266 , H01L21/761 , H01L27/0727 , H01L29/32 , H01L29/7397
摘要： Provided is a method of manufacturing a semiconductor device capable of preventing a relative displacement of the positions between a range where impurity ions are injected and a range where charged particles are injected. The method of manufacturing the semiconductor device includes: irradiating impurity ions in a state in which a mask is disposed between an impurity ion irradiation apparatus and a semiconductor substrate; and irradiating charged particles to form a short carrier lifetime region, in a state in which the mask is disposed between a charged particle irradiation apparatus and the semiconductor substrate. A relative positional relationship between the mask and the semiconductor substrate is not changed from a beginning of one of the irradiating the impurity ions and the irradiating the charged particles to a completion of both of the irradiating the impurity ions and the irradiating the charged particles.
摘要翻译：提供一种制造能够防止在注入杂质离子的范围之间的位置与注入带电粒子的范围之间的位置的相对位移的半导体器件的方法。半导体装置的制造方法包括：在杂质离子照射装置和半导体基板之间设置掩模的状态下照射杂质离子; 并且在掩模设置在带电粒子照射装置和半导体基板之间的状态下照射带电粒子以形成短的载流子寿命区域。掩模和半导体衬底之间的相对位置关系从照射杂质离子和照射带电粒子之一开始到完全照射杂质离子并照射带电粒子之后不会改变。

3. 发明授权

US06663814B2 Process for producing adsorbent and cleaning filter 有权
标题翻译：生产吸附剂和清洗过滤器的方法
公开(公告)号：US06663814B2
公开(公告)日：2003-12-16
申请号：US09959248
申请日：2002-01-14
申请人： Syouko Kondou , Kazuhisa Murase , Akira Kamei , Masao Andou
发明人： Syouko Kondou , Kazuhisa Murase , Akira Kamei , Masao Andou
IPC分类号： B29B1114
CPC分类号： B01D39/2062 , B01D39/2055 , B01D53/02 , B01D2239/086 , B01D2239/10 , B01D2239/1208 , B01D2239/1266 , B01J20/20 , B01J20/28042 , B01J20/28045 , B01J20/30 , B01J20/3007 , B01J20/3042
摘要： An adsorbent block that has a high adsorption efficiency and can be produced at a low cost is provided. A paste comprising water having mainly active carbon powder dispersed therein is prepared, and a molded block is formed with the paste. Water is removed from the molded block to bind mainly the active carbon powder, so as to obtain an adsorbent block formed to have cells. The paste contains an agar component that is capable of shrinking the molded block and of increasing the surface area of the cell by disappearance.
摘要翻译：提供了具有高吸附效率并且可以以低成本生产的吸附剂块。制备包含分散有主要活性炭粉末的水的糊状物，并用糊料形成模塑块。从模制块中除去水，主要结合活性炭粉末，以获得形成具有细胞的吸附剂块。糊状物含有能够使模制块收缩并且通过消失增加细胞表面积的琼脂组分。

4. 发明授权

US4154364A Thermally insulating containers for liquefied gases 失效
标题翻译：液化气绝热容器
公开(公告)号：US4154364A
公开(公告)日：1979-05-15
申请号：US753689
申请日：1976-12-23
申请人： Zenji Hagiwara , Sigeo Matsui , Yamanaka, Yoshio , Akira Kamei , Susumu Sakaguchi
发明人： Zenji Hagiwara , Sigeo Matsui , Yamanaka, Yoshio , Akira Kamei , Susumu Sakaguchi
IPC分类号： C01B3/00 , F17C3/08 , B65D25/18
CPC分类号： F17C3/08 , C01B3/0057 , F17C2203/018 , Y02E60/321 , Y02E60/327 , Y10S420/90
摘要： Thermally insulating containers or the Dewar containers useful for shipping and storage of low-temperature liquefied gases, having double walls made of a metal, the space between the walls being evacuated, are provided, the thermal insulation properties of which are prevented from deterioration by putting in the vacuum space, a getter alloy composed of a ternary alloy expressed by the formula LaNi.sub.x Cr.sub.y, where x is a number from 1 to 6, both inclusive and y is a number from 0.1 to 2, both inclusive, working to adsorb traces of hydrogen coming out of the wall material. The alloy is preferably an activated one. The vacuum thermal insulation can further be improved by the presence of an adsorbent having a large specific area which serves to adsorb traces of gases other than hydrogen.
摘要翻译：隔热容器或杜瓦容器可用于运输和储存低温液化气体，具有由金属制成的双层壁，壁之间的空间被抽真空，其绝热性能通过放置防止其劣化在真空空间中，由由式LaNixCry表示的三元合金组成的吸气剂合金，其中x为1至6的数，包括端值，y为0.1至2的数字，包括两端，用于吸附痕量的氢从墙壁材料出来。该合金优选是活化的。通过存在用于吸附除了氢以外的痕量气体的比表面积大的吸附剂，可进一步提高真空热绝缘。

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