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1. 发明授权

US07777234B2 Light-receiving element and photonic semiconductor device provided therewith 失效
标题翻译：光接收元件及其提供的光子半导体器件
公开(公告)号：US07777234B2
公开(公告)日：2010-08-17
申请号：US10380861
申请日：2001-09-27
申请人： Susumu Nishimura , Shoji Honda , Koji Ueyama
发明人： Susumu Nishimura , Shoji Honda , Koji Ueyama
IPC分类号： H01L27/15
CPC分类号： H01L31/173 , H01L25/167 , H01L31/103 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014 , H01S5/02208 , H01S5/02244 , H01S5/02248 , H01S5/0683 , H01L2224/05599
摘要： A light-receiving element has a photodiode formed in part of the top surface of a semiconductor substrate so as to function as a light-receiving region, and has a light-emitting element mount electrode formed on top of the semiconductor substrate where the light-receiving region is not formed. A high concentration impurity layer is formed below the top surface of the semiconductor substrate along the peripheral edges of the light-emitting element mount electrode. This helps prevent the voltage applied to the light-emitting element mount electrode from influencing the output of the light-receiving element.Alternatively, a photonic semiconductor device has a light-emitting element and a light-receiving element, and has the light-receiving region of the light-receiving element formed parallel to the direction in which the light-emitting element emits light. The light-emitting element is arranged so that, when viewed in a plan view, the light-emitting point thereof overlaps with at least part of the light-receiving region. This permits easy fitting of the light-emitting element even with a low light-emitting point, and thus helps reduce variation in light reception sensitivity.
摘要翻译：光接收元件具有形成在半导体衬底的顶表面的一部分中以用作光接收区域的光电二极管，并且具有形成在半导体衬底的顶部上的发光元件安装电极，不形成接收区域。沿着发光元件安装电极的周缘形成在半导体衬底的顶表面下方的高浓度杂质层。这有助于防止施加到发光元件安装电极的电压影响光接收元件的输出。或者，光子半导体器件具有发光元件和受光元件，并且具有与发光元件发光的方向平行的光接收元件的受光区域。发光元件布置成使得当在平面图中观察时，其发光点与光接收区域的至少一部分重叠。这使得发光元件即使在低发光点也容易安装，从而有助于减少光接收灵敏度的变化。

2. 发明授权

US07889770B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07889770B2
公开(公告)日：2011-02-15
申请号：US11898576
申请日：2007-09-13
申请人： Shoji Honda
发明人： Shoji Honda
IPC分类号： H01S3/04
CPC分类号： H01S5/02212 , H01L2224/48091 , H01L2924/19107 , H01S5/02288 , H01S5/024 , H01L2924/00014
摘要： A semiconductor laser beam device, comprising a stem type package having a base part and a heat sink part, wherein the heat sink part is cylindrically formed so as to be concentric to the base part, a groove is formed along the axial direction of the heat sink part, and a semiconductor laser beam element is disposed at the bottom part of the inner wall surfaces of the groove whereby the radiating capability of the semiconductor laser beam device can be increased by increasing the volume of the heat sink part, and the element can be protected by the groove.
摘要翻译：一种半导体激光束装置，包括具有基部和散热部的杆型封装，其中所述散热部与所述基部同心地圆柱形地形成，沿着所述热的轴向形成有槽并且半导体激光束元件设置在槽的内壁表面的底部，由此可以通过增加散热器部分的体积来增加半导体激光束装置的辐射能力，并且元件可以被槽保护。

3. 发明授权

US5146466A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5146466A
公开(公告)日：1992-09-08
申请号：US664866
申请日：1991-04-11
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
IPC分类号： H01S5/22 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。

4. 发明授权

US5555271A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5555271A
公开(公告)日：1996-09-10
申请号：US363619
申请日：1994-12-23
申请人： Shoji Honda , Masayuki Shono , Ryoji Hiroyama , Yasuyuki Bessho , Hiroyuki Kase , Toyozo Nishida , Takahiro Uetani , Junko Suzuki
发明人： Shoji Honda , Masayuki Shono , Ryoji Hiroyama , Yasuyuki Bessho , Hiroyuki Kase , Toyozo Nishida , Takahiro Uetani , Junko Suzuki
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/2004 , H01S5/2231 , H01S5/3202 , H01S5/3213 , H01S5/3218
摘要： On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.
摘要翻译：在n型GaAs半导体衬底上，与半导体衬底几乎晶格匹配的AlGaInP系晶体形成的n型覆层，与AlGaInP系晶体形成的几乎与晶格匹配的p型覆层，形成由AlGaInP系晶体或AlInP系晶体构成的p型势垒覆层，p型覆层。 p型势垒覆层具有电子几乎不透射的厚度，具有拉伸应变，并且还具有比p型覆层更大的带隙能量。

5. 发明授权

US5411915A Method of manufacturing a single crystal layers 失效
标题翻译：制造单晶层的方法
公开(公告)号：US5411915A
公开(公告)日：1995-05-02
申请号：US134293
申请日：1993-10-08
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
IPC分类号： H01S5/22 , H01S5/32 , H01S5/323 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326 , Y10S148/064 , Y10S148/11 , Y10S438/973
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。

6. 发明授权

US5016252A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5016252A
公开(公告)日：1991-05-14
申请号：US412786
申请日：1989-09-26
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
IPC分类号： H01S5/22 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。

7. 发明授权

US4407132A Control apparatus and method for engine/electric hybrid vehicle 失效
标题翻译：发动机/电动混合动力汽车的控制装置和方法
公开(公告)号：US4407132A
公开(公告)日：1983-10-04
申请号：US330433
申请日：1981-12-14
申请人： Shiro Kawakatsu , Shoji Honda
发明人： Shiro Kawakatsu , Shoji Honda
IPC分类号： B60K6/48 , B60K6/54 , B60L50/15 , B60T1/10 , B60W10/06 , B60W10/08 , B60W10/26 , B60W20/00 , F02B73/00
CPC分类号： B60W10/06 , B60K6/48 , B60K6/54 , B60L11/12 , B60T1/10 , B60W10/08 , B60W10/26 , B60W20/00 , Y02T10/6221 , Y02T10/6286 , Y02T10/7005 , Y02T10/7077 , Y10S903/917
摘要： A hybrid vehicle comprises an internal combustion engine and a motor/generator, which are controlled by a microcomputer. The internal combustion engine is rendered capable of a running operation in a region of a better fuel consumption characteristic. Outside the above described region, the motor is cooperatively driven with the internal combustion engine to provide a driving torque or only the motor is energized by a battery to provide a driving torque. On the other hand, when the hybrid vehicle is driven with a torque smaller than a predetermined lower limit value of the torque of the internal combustion engine, the redundant torque is used to drive the generator, so that a regenerative power is absorbed by the battery.
摘要翻译：混合动力车辆包括由微型计算机控制的内燃机和电动机/发电机。内燃机能够在更好的燃料消耗特性的区域中进行运行操作。在上述区域之外，电动机与内燃机协同驱动以提供驱动扭矩，或者只有电动机由电池供电以提供驱动转矩。另一方面，当以小于内燃机的扭矩的预定下限值的转矩驱动混合动力车辆时，使用冗余转矩来驱动发电机，使得再生电力被电池吸收。

8. 发明授权

US06885076B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06885076B2
公开(公告)日：2005-04-26
申请号：US10333072
申请日：2001-06-21
申请人： Shoji Honda , Yasuhiro Watanabe , Yasuyuki Bessho , Kentarou Tanaka
发明人： Shoji Honda , Yasuhiro Watanabe , Yasuyuki Bessho , Kentarou Tanaka
IPC分类号： H01L23/495 , H01L33/62 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/026 , H01L31/0203
CPC分类号： H01L33/62 , H01L2224/48247 , H01L2924/01021 , H01L2924/01039 , H01L2924/01079 , H01S5/02244 , H01S5/02248 , H01S5/02469 , H01S5/0683
摘要： A semiconductor laser device includes a semiconductor laser element, a lead having an element disposing section where elements are disposed and a resin bonded to the lead. The lead has a thick portion and a thin portion with the thick portion being formed to extend at least in the direction of the width of the resin to cover a region having a length equal to or greater then the width of the resin. A semiconductor laser device has a semiconductor laser element, a lead having an element mount portion on which the semiconductor laser element is mounted and a resin maintained in intimate contact with the lead. The lead has a thicker portion and a thinner portion. The thicker portion is formed to extend in the direction of the width of the resin over a width equal to or greater than the width of the resin.
摘要翻译：半导体激光器件包括半导体激光器元件，具有元件设置部分的元件的引线和与引线接合的树脂。引线具有厚的部分和薄的部分，其中厚部分形成为至少沿树脂的宽度方向延伸，以覆盖长度等于或大于树脂宽度的区域。半导体激光器件具有半导体激光元件，具有安装半导体激光元件的元件安装部分的引线和保持与引线紧密接触的树脂。引线具有较厚部分和较薄部分。较厚部分形成为在树脂的宽度方向上延伸至等于或大于树脂宽度的宽度。

9. 发明授权

US5586136A Semiconductor laser device with a misoriented substrate 失效
标题翻译：半导体激光器件具有错误取向的衬底
公开(公告)号：US5586136A
公开(公告)日：1996-12-17
申请号：US270056
申请日：1994-07-01
申请人： Shoji Honda , Masayuki Shono , Yasuyuki Bessho , Ryoji Hiroyama , Hiroyuki Kase , Takatoshi Ikegami
发明人： Shoji Honda , Masayuki Shono , Yasuyuki Bessho , Ryoji Hiroyama , Hiroyuki Kase , Takatoshi Ikegami
IPC分类号： H01S5/00 , H01S5/10 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34326 , H01S5/1039 , H01S5/2013 , H01S5/2231 , H01S5/3202 , H01S5/3403
摘要： A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.
摘要翻译：根据本发明的半导体激光器件包括第一导电类型的GaAs衬底，形成在衬底的一个主表面上的第一导电类型的覆层，具有量子阱结构的有源层，其中拉伸应变量形成在第一导电类型的包覆层上的阱层和量子势垒层交替层叠，并且在有源层上形成第二导电类型的包覆层。基板的一个主表面是在<011>方向上从基板的{100}面偏离9°至17°的表面，并且空腔长度不小于150μm不大于300μm 。

10. 发明授权

US5416790A Semiconductor laser with a self-sustained pulsation 失效
标题翻译：具有自持脉冲的半导体激光器
公开(公告)号：US5416790A
公开(公告)日：1995-05-16
申请号：US147779
申请日：1993-11-04
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
IPC分类号： H01S5/065 , H01S5/20 , H01S5/223 , H01S5/32 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译：公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层类型。第一和第二覆层具有比有源层更大的折射率和更大的带隙。在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

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