专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050031959A1 Positive electrode material mixture and alkaline battery using the same 审中-公开
标题翻译：正极材料混合物和碱性电池使用相同
公开(公告)号：US20050031959A1
公开(公告)日：2005-02-10
申请号：US10895843
申请日：2004-07-22
申请人： Susumu Kato , Eiji Tano , Shinichi Sumiyama , Shuji Fujiwara , Yasushi Sumihiro
发明人： Susumu Kato , Eiji Tano , Shinichi Sumiyama , Shuji Fujiwara , Yasushi Sumihiro
IPC分类号： H01M6/08 , H01M4/06 , H01M4/24 , H01M4/32 , H01M4/50 , H01M4/52 , H01M4/62
CPC分类号： H01M4/32 , H01M4/24 , H01M4/625 , H01M2004/021 , H01M2004/023 , H01M2004/027
摘要： In order to provide a positive electrode material mixture for an alkaline battery, the positive electrode material mixtures having small weight variations, a granulated mixture with favorable fluidity is used which comprises graphite and a positive electrode active material containing at least one of manganese dioxide and nickel oxyhydroxide, and has an angle of repose of 20 to 43 degrees.
摘要翻译：为了提供碱性电池的正极材料混合物，使用重量变化小的正极材料混合物，具有良好流动性的造粒混合物，其包含石墨和含有二氧化锰和镍中的至少一种的正极活性材料羟基氧化物，并且具有20至43度的休止角。

2. 发明授权

US07244529B2 Alkaline dry battery 失效
标题翻译：碱性干电池
公开(公告)号：US07244529B2
公开(公告)日：2007-07-17
申请号：US10484089
申请日：2002-05-17
申请人： Shuji Fujiwara , Shigeto Noya , Yasuo Mukai , Michiko Fujiwara , Shinichi Sumiyama , Takeshi Okubo , Yasuko Hoshina
发明人： Shuji Fujiwara , Shigeto Noya , Yasuo Mukai , Michiko Fujiwara , Shinichi Sumiyama , Takeshi Okubo , Yasuko Hoshina
IPC分类号： H01M4/06 , H01M4/42
CPC分类号： H01M4/42 , H01M2/1606 , H01M4/244 , H01M6/045 , H01M6/06
摘要： In order to obtain an alkaline dry battery low in the possibility of electrolyte leakage and excellent in discharge performance as well as an alkaline dry battery which is not likely to cause an internal short circuit even with the use of a thin separator, as a zinc powder used is one including 65 to 75 wt % of first zinc particles having a particle size of larger than 75 μm and not larger than 425 μm, and 25 to 35 wt % of second zinc particles having a particle size of not larger than 75 μm.
摘要翻译：为了获得电解液泄漏可能性低，放电性能优异的碱性干电池以及即使使用薄隔板也不可能引起内部短路的碱性干电池，作为锌粉使用的是使用65〜75重量％的粒径大于75μm，不大于425μm的第一锌粒子和25〜35重量％的粒径不大于75μm的第二锌粒子。

3. 发明申请

US20060011944A1 Semiconductor device 有权
公开(公告)号：US20060011944A1
公开(公告)日：2006-01-19
申请号：US11181890
申请日：2005-07-15
申请人： Shuji Fujiwara , Tatsuhiko Koide
发明人： Shuji Fujiwara , Tatsuhiko Koide
IPC分类号： H01L31/109
CPC分类号： H01L29/0804 , H01L29/66242 , H01L29/7378
摘要： A semiconductor device provided with an emitter layer having a narrowed base contact portion. The semiconductor device includes a collector layer arranged on a semiconductor substrate. A conductive layer is arranged on the collector layer. A silicon film is arranged on the conductive layer. An emitter electrode is arranged on the silicon film. A first film covers the side of the emitter electrode. The silicon film includes a first region contacting the emitter electrode and a second region differing from the first region. A contact surface between the first region and the emitter electrode is located at a level that is higher than that of the lower surface of the first film. At least part of the second region of the silicon film is located between the conductive layer and the first film and is in contact with the conductive layer and the first film.

4. 发明授权

US06300186B1 Method of measuring semiconductor device 失效
标题翻译：测量半导体器件的方法
公开(公告)号：US06300186B1
公开(公告)日：2001-10-09
申请号：US08637038
申请日：1996-04-24
申请人： Toshiyuki Hirota , Shuji Fujiwara
发明人： Toshiyuki Hirota , Shuji Fujiwara
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L27/10817
摘要： There is provided a method of manufacturing a semiconductor device having a MOS transistor formed on a silicon substrate, and a stacked capacitor constituted by an information storage electrode provided above the MOS transistor through an insulating interlayer and a counter-electrode separated from the information storage electrode due to the presence of a capacitor insulating film. In this method, the capacitor is formed by adding an impurity in a silicon oxide film which is formed on the insulating interlayer and used to shape the information storage electrode, and performing etching by using a chemical solution containing phosphoric acid, sulfuric acid, nitric acid, or a solution mixture thereof, or a chemical solution containing a solution mixture of an aqueous ammonia solution and a hydrogen peroxide solution to selectively remove the silicon oxide film added with the impurity.
摘要翻译：提供一种制造具有形成在硅衬底上的MOS晶体管的半导体器件的方法，以及由通过绝缘中间层设置在MOS晶体管上方的信息存储电极和从信息存储电极分离的对电极构成的堆叠电容器由于存在电容器绝缘膜。在该方法中，电容器通过在绝缘中间层上形成的用于形成信息存储电极的氧化硅膜中添加杂质形成，并且使用含有磷酸，硫酸，硝酸的化学溶液进行蚀刻或其溶液混合物，或含有氨水溶液和过氧化氢溶液的溶液混合物的化学溶液，以选择性地除去添加有杂质的氧化硅膜。

5. 发明授权

US07459766B2 Semiconductor bipolar transistor 有权
标题翻译：半导体双极晶体管
公开(公告)号：US07459766B2
公开(公告)日：2008-12-02
申请号：US11392613
申请日：2006-03-30
申请人： Shuji Fujiwara
发明人： Shuji Fujiwara
IPC分类号： H01L27/082
CPC分类号： H01L29/66272 , H01L29/0821 , H01L29/7322
摘要： A semiconductor device including a bipolar transistor in which the collector resistance. The bipolar transistor includes a first conduction type semiconductor substrate having a main surface. A second conduction type collector region is formed in the semiconductor substrate. A shallow trench isolation structure isolates the main surface of the semiconductor substrate into two insulated active regions. A collector leading portion is formed in one of the active regions. A first conduction type base region and a second conduction type emitter region are formed on the other one of the active regions. The collector region has a first depth from the main surface immediately below the shallow trench isolation structure, and the collector region has a second depth from the main surface immediately below the two active regions. The first depth is less than the second depth.
摘要翻译：一种半导体器件，包括集电极电阻的双极晶体管。双极晶体管包括具有主表面的第一导电型半导体衬底。在半导体衬底中形成第二导电型集电极区域。浅沟槽隔离结构将半导体衬底的主表面隔离成两个绝缘的有源区。集电极引导部分形成在一个有源区中。第一导电型基极区域和第二导电型发射极区域形成在另一个有源区域上。集电极区域具有从浅沟槽隔离结构正下方的主表面的第一深度，并且集电极区域具有紧邻两个活性区域的主表面的第二深度。第一个深度小于第二个深度。

6. 发明申请

US20070154791A1 Alkaline dry battery 审中-公开
标题翻译：碱性干电池
公开(公告)号：US20070154791A1
公开(公告)日：2007-07-05
申请号：US10569640
申请日：2004-08-24
申请人： Mitsuji Adachi , Shuji Fujiwara , Takeshi Okubo
发明人： Mitsuji Adachi , Shuji Fujiwara , Takeshi Okubo
IPC分类号： H01M2/18
CPC分类号： H01M2/18 , H01M2/1626 , H01M6/08 , H01M6/085
摘要： An alkaline dry battery of the present invention has a cylindrical separator, and a bottom separator including a first bottom paper and a second bottom paper. The first bottom paper has a first bottom part and a first rising part which is placed around the first bottom part and upright along the inside of the cylindrical separator. The second bottom paper has a second bottom part and a second rising part which is placed around the second bottom part and upright along the outside of the cylindrical separator. The first rising part and the second rising part sandwich an end of the cylindrical separator therebetween. With the use of the bottom separator, it is possible to fix the bottom-side end of the cylindrical separator, and therefore to provide a highly reliable alkaline dry battery with excellent discharge performance because the bottom separator does not move even when a vibration or impact is applied to the alkaline dry battery.
摘要翻译：本发明的碱性干电池具有圆柱形隔膜和包括第一底纸和第二底纸的底部隔板。第一底纸具有第一底部和第一上升部分，该第一底部部分围绕第一底部部分放置并且沿着圆柱形分离器的内部竖立。第二底纸具有第二底部部分和第二上升部分，该第二底部部分和第二上升部分沿着第二底部部分放置并且沿着圆柱形分离器的外部竖立。第一上升部分和第二上升部分将圆柱形分离器的一端夹在其间。通过使用底部分离器，可以固定圆筒形分离器的底侧端部，从而提供具有优异的排出性能的高度可靠的碱性干电池，因为即使当振动或冲击时底部分离器也不移动应用于碱性干电池。

7. 发明授权

US07166762B2 Method of constructing heart failure model animal 失效
标题翻译：建立心力衰竭模型动物的方法
公开(公告)号：US07166762B2
公开(公告)日：2007-01-23
申请号：US10380920
申请日：2001-09-27
申请人： Shuji Fujiwara , Shota Ikeda , Keiji Kusumoto
发明人： Shuji Fujiwara , Shota Ikeda , Keiji Kusumoto
IPC分类号： A01K67/00 , G01N33/00
CPC分类号： A61K49/0008
摘要： A non-human mammal which is usefully and effectively applicable to the screening of a substance to be employed for preventing and treating heart failure. This animal is an animal model of heart failure prepared by starting both coronary stenosis and the stenosis of arteries other than the coronary artery and the abdominal artery of a non-human mammal within the same period of time.
摘要翻译：非人哺乳动物，其有效地和有效地适用于筛选用于预防和治疗心力衰竭的物质。该动物是通过在同一时间段内开始冠状动脉狭窄和除非冠状动脉和非人哺乳动物的腹动脉以外的动脉狭窄而制备的心力衰竭的动物模型。

8. 发明授权

US08723258B2 Electrostatic discharge (ESD) tolerance for a lateral double diffusion metal oxide semiconductor (LDMOS) transistor 有权
标题翻译：横向双扩散金属氧化物半导体（LDMOS）晶体管的静电放电（ESD）耐受性
公开(公告)号：US08723258B2
公开(公告)日：2014-05-13
申请号：US13229201
申请日：2011-09-09
申请人： Kiyofumi Nakaya , Tetsuro Hirano , Shuji Fujiwara
发明人： Kiyofumi Nakaya , Tetsuro Hirano , Shuji Fujiwara
IPC分类号： H01L29/66 , H01L29/06 , H01L29/78 , H01L29/08
CPC分类号： H01L29/0696 , H01L27/027 , H01L29/0856 , H01L29/1095 , H01L29/7816
摘要： An ESD tolerance of an LDMOS transistor is improved. An N+ type source layer shaped in a ladder and having a plurality of openings in its center is formed in a surface of a P type base layer using a gate electrode and a resist mask. A P+ type contact layer is formed to be buried in the opening. At that time, a distance from an edge of the opening, that is an edge of the P+ type contact layer, to an edge of the N+ type source layer is set to a predetermined distance. The predetermined distance is equal to a distance at which an HBM+ESD tolerance of the LDMOS transistor, which increases as the distance increases, begins to saturate.
摘要翻译：提高了LDMOS晶体管的ESD耐受性。使用栅极和抗蚀剂掩模在P型基底层的表面上形成梯形并且在其中心具有多个开口的N +型源极层。形成P +型接触层以埋入开口中。此时，从开口的边缘（即P +型接触层的边缘）到N +型源极层的边缘的距离被设定为预定距离。预定距离等于距离增加时增加的LDMOS晶体管的HBM + ESD容限的距离开始饱和。

9. 发明申请

US20060220104A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060220104A1
公开(公告)日：2006-10-05
申请号：US11392613
申请日：2006-03-30
申请人： Shuji Fujiwara
发明人： Shuji Fujiwara
IPC分类号： H01L29/788
CPC分类号： H01L29/66272 , H01L29/0821 , H01L29/7322
摘要： A semiconductor device including a bipolar transistor in which the collector resistance. The bipolar transistor includes a first conduction type semiconductor substrate having a main surface. A second conduction type collector region is formed in the semiconductor substrate. A shallow trench isolation structure isolates the main surface of the semiconductor substrate into two insulated active regions. A collector leading portion is formed in one of the active regions. A first conduction type base region and a second conduction type emitter region are formed on the other one of the active regions. The collector region has a first depth from the main surface immediately below the shallow trench isolation structure, and the collector region has a second depth from the main surface immediately below the two active regions. The first depth is less than the second depth.
摘要翻译：一种半导体器件，包括集电极电阻的双极晶体管。双极晶体管包括具有主表面的第一导电型半导体衬底。在半导体衬底中形成第二导电型集电极区域。浅沟槽隔离结构将半导体衬底的主表面隔离成两个绝缘的有源区。集电极引导部分形成在一个有源区中。第一导电型基极区域和第二导电型发射极区域形成在另一个有源区域上。集电极区域具有从浅沟槽隔离结构正下方的主表面的第一深度，并且集电极区域具有紧邻两个活性区域的主表面的第二深度。第一个深度小于第二个深度。

10. 发明授权

US6143619A Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus 失效
标题翻译：半导体装置及半导体装置制造装置的制造方法
公开(公告)号：US6143619A
公开(公告)日：2000-11-07
申请号：US116899
申请日：1998-07-17
申请人： Kenji Okamura , Shuji Fujiwara , Takao Katuyama
发明人： Kenji Okamura , Shuji Fujiwara , Takao Katuyama
IPC分类号： H01L27/04 , C23C16/02 , C23C16/24 , C23C16/44 , H01L21/02 , H01L21/205 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L21/20
CPC分类号： H01L28/84 , C23C16/0227 , C23C16/24 , C23C16/4401 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02587 , H01L21/02658
摘要： A method of manufacturing a semiconductor device contains a first treatment step of removing a silicon oxide film on a semiconductor substrate (15) in a rare hydrofluoric acid treatment device (12), a second treatment step of forming hemispherical grained silicon on the semiconductor substrate (15) in an HSG-Si forming device (13), and a step of moving the semiconductor substrate (15) treated in the first treatment step to the HSG-Si forming device (13) by means of a semiconductor substrate moving device (14), wherein filtering an air in the semiconductor substrate moving device (14) is conducted so that an amount of organic materials which adhere onto a surface of the semiconductor substrate (15) during a process to the second treatment step is set to 1 ng/cm.sup.2 or less.
摘要翻译：半导体器件的制造方法包括在稀有的氢氟酸处理器件（12）中除去半导体衬底（15）上的氧化硅膜的第一处理步骤，在半导体衬底上形成半球形晶粒硅的第二处理步骤（ 15）在HSG-Si形成装置（13）中的步骤，以及通过半导体衬底移动装置（14）将在第一处理步骤中处理的半导体衬底（15）移动到HSG-Si形成装置（13）的步骤），其中，对半导体衬底移动装置（14）中的空气进行过滤，使得在第二处理步骤的处理期间粘附到半导体衬底（15）的表面上的有机材料的量被设定为1ng / cm2以下。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式