专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06252228B1 Method of analyzing morphology of bulk defect and surface defect on semiconductor wafer 失效
标题翻译：分析半导体晶片上体缺陷和表面缺陷形态的方法
公开(公告)号：US06252228B1
公开(公告)日：2001-06-26
申请号：US09204054
申请日：1998-12-03
申请人： Sung-hoon Cho , Tae-yeol Heo
发明人： Sung-hoon Cho , Tae-yeol Heo
IPC分类号： G01N2304
CPC分类号： H01L21/67288
摘要： A method of analyzing the morphology of bulk and surface defects on a semiconductor wafer includes: determining a location of the defects; marking an indication proximate the location; milling the wafer using the indication, to thereby make a specimen; and analyzing the specimen to obtain the defects' morphology. Bulk defects as deep 5-250 &mgr;m can be detected and surface defects as deep as 10 &mgr;m from the wafer's surface can be detected. Both morphology analyses preferably include using TEM (Transmission Electron Microscopy). The location determination for both defects preferably includes projecting a laser beam onto the wafer. By obtaining the morphology of the defects, the cause of failure due to the bulk defects and surface defects can accurately be investigated, increasing semiconductor devices' reliability.
摘要翻译：分析半导体晶片上的体和表面缺陷的形态的方法包括：确定缺陷的位置; 标示位置附近的指示; 使用指示研磨晶片，从而制成样品; 并分析样品以获得缺陷的形态。可以检测到深5-250μm的体积缺陷，并且可以检测到从晶片表面深达10um的表面缺陷。两种形态分析优选包括使用TEM（透射电子显微镜）。两个缺陷的位置确定优选地包括将激光束投射到晶片上。通过获得缺陷的形态，可以准确地研究由于体缺陷和表面缺陷引起的故障原因，提高半导体器件的可靠性。

2. 发明授权

US5972863A Slurry compositions for polishing wafers used in integrated circuit devices and cleaning compositions for removing electron wax after polishing 失效
标题翻译：用于在集成电路器件中使用的抛光晶片的浆料组合物和用于在抛光之后去除电子蜡的清洁组合物
公开(公告)号：US5972863A
公开(公告)日：1999-10-26
申请号：US41274
申请日：1998-03-12
申请人： Tae-yeol Heo , Jung-min Park , Sung-hoon Cho , Gi-jung Kim
发明人： Tae-yeol Heo , Jung-min Park , Sung-hoon Cho , Gi-jung Kim
IPC分类号： B24B37/00 , C09K3/14 , C11D7/06 , C11D7/20 , C11D11/00 , H01L21/304 , C11D3/14 , C11D9/20
CPC分类号： C11D7/20 , C11D11/0047 , C11D7/06
摘要： Compositions useful for polishing wafers to be used in microelectronic devices comprise silicon dioxide, aluminum oxide, sodium hydroxide, and water. Cleaning compositions for removing electron wax from wafers to be used in microelectronic devices comprise from about 2 to about 6 percent by weight of ammonium hydroxide, from about 10 to about 22 percent by weight of hydrogen peroxide, and water.
摘要翻译：用于抛光用于微电子器件的晶片的组合物包括二氧化硅，氧化铝，氢氧化钠和水。用于从微电子器件中使用的晶片去除电子蜡的清洁组合物包含约2-约6重量％的氢氧化铵，约10-约22重量％的过氧化氢和水。

3. 发明授权

US06724474B1 Wafer surface inspection method 失效
标题翻译：晶圆表面检查方法
公开(公告)号：US06724474B1
公开(公告)日：2004-04-20
申请号：US09670817
申请日：2000-09-28
申请人： Tae-yeol Heo , Kyoo-chul Cho , Kyong-rim Kang , Soo-yeul Choi
发明人： Tae-yeol Heo , Kyoo-chul Cho , Kyong-rim Kang , Soo-yeul Choi
IPC分类号： G01N2188
CPC分类号： H01L21/3065 , G01N21/94 , G01N21/9501 , G01N2021/8822 , H01L22/12
摘要： Types of defects on a wafer are discriminated according to defect measurements obtained from a wafer inspection system which includes a plurality of dark field detectors. Using the wafer measurement system, it is determined whether first, second and third conditions are satisfied. The first condition is when a size of a defect on the wafer measured by the wafer inspection system is smaller than a limit value denoting a maximum size of crystal originated particles. The second condition is when a correlation between a plurality of defect light intensity values detected by a plurality of dark field detectors of the wafer measurement system satisfies a reference value. The third condition is when a location of the defect measured by the wafer inspection system is within a vacancy-rich area of the wafer. The type of the defect is then determined to be a crystal originated particle when the first, second and third conditions are all satisfied. On the other hand, the type of defect is determined to be an actual particle when any one or more of the first, second and third conditions is not satisfied.
摘要翻译：根据从包括多个暗场检测器的晶片检查系统获得的缺陷测量来区分晶片上的缺陷的类型。使用晶片测量系统，确定是否满足第一，第二和第三条件。第一条件是当由晶片检查系统测量的晶片上的缺陷的尺寸小于表示晶体起始粒子的最大尺寸的极限值时。第二条件是当由晶片测量系统的多个暗场检测器检测到的多个缺陷光强值之间的相关性满足参考值时。第三个条件是当由晶片检查系统测量的缺陷的位置在晶片的空缺区域内时。然后当满足第一，第二和第三条件时，将缺陷的类型确定为晶体起始粒子。另一方面，当不满足第一，第二和第三条件中的任何一个或多个条件时，将缺陷的类型确定为实际粒子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式