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1. 发明申请

US20080036024A1 Image sensors and methods of manufacturing the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080036024A1
公开(公告)日：2008-02-14
申请号：US11889122
申请日：2007-08-09
申请人： Sung-ho Hwang , Duck-hyung Lee , Seong-sue Kim , Hong-ki Kim , Chang-rok Moon , Yun-ki Lee
发明人： Sung-ho Hwang , Duck-hyung Lee , Seong-sue Kim , Hong-ki Kim , Chang-rok Moon , Yun-ki Lee
IPC分类号： H01L31/0232 , H01L21/00
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14645
摘要： An image sensor may include a semiconductor substrate having unit pixel regions on the semiconductor substrate; photoelectric converters formed in the unit pixel regions; interlayer insulating films covering the photoelectric converters and having opening portions formed above the photoelectric converters; a light-transmissive portion filling the opening portions; color filters formed on the light-transmissive portion; and microlenses formed on the color filters. The microlenses may include a plurality of concentric circle patterns and a plurality of arc patterns arranged around the concentric circle patterns. An arc pattern around a specific concentric circle pattern may have a same center as the specific concentric circle pattern. A method of manufacturing the image sensor may include forming the photoelectric converters; forming the interlayer insulating films; removing parts of the interlayer insulating films to form the opening portions; forming the light-transmissive portion to fill the opening portions; forming the color filters; and forming the microlenses.
摘要翻译：图像传感器可以包括在半导体衬底上具有单位像素区域的半导体衬底; 形成在单位像素区域的光电转换器; 层间绝缘膜覆盖光电转换器，并具有形成在光电转换器上方的开口部分; 填充所述开口部的透光部; 形成在透光部分上的滤色器; 和在滤色器上形成的微透镜。微透镜可以包括多个同心圆形图案和围绕同心圆图案布置的多个弧形图案。围绕特定同心圆图案的弧形图案可以具有与特定同心圆图案相同的中心。图像传感器的制造方法可以包括形成光电转换器; 形成层间绝缘膜; 去除层间绝缘膜的部分以形成开口部分; 形成所述透光部以填充所述开口部; 形成滤色片; 并形成微透镜。

2. 发明授权

US07803653B2 Method of manufacturing image sensor 有权
标题翻译：图像传感器的制造方法
公开(公告)号：US07803653B2
公开(公告)日：2010-09-28
申请号：US11834818
申请日：2007-08-07
申请人： Gil-sang Yoo , Byung-jun Park , Yun-ki Lee
发明人： Gil-sang Yoo , Byung-jun Park , Yun-ki Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/14689
摘要： A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region. The method further includes forming a photoelectric converter in the active pixel sensor area, polishing a rear surface of the semiconductor substrate and using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.
摘要翻译：一种制造图像传感器的方法包括在半导体衬底的有源像素传感器区域中形成器件隔离区域和半导体衬底的划线路区域中的对准键，使得对准键的深度等于或小于设备隔离区域的深度。该方法还包括在有源像素传感器区域中形成光电转换器，对半导体衬底的后表面进行抛光并使用对准键在与半导体衬底的抛光后表面上的光电转换器对应的位置处形成微透镜。

3. 发明申请

US20080038864A1 Method of Manufacturing Image Sensor 有权
标题翻译：图像传感器制造方法
公开(公告)号：US20080038864A1
公开(公告)日：2008-02-14
申请号：US11834818
申请日：2007-08-07
申请人： Gil-sang Yoo , Byung-jun Park , Yun-ki Lee
发明人： Gil-sang Yoo , Byung-jun Park , Yun-ki Lee
IPC分类号： H01L31/18
CPC分类号： H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/14689
摘要： A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region. The method further includes forming a photoelectric converter in the active pixel sensor area, polishing a rear surface of the semiconductor substrate and using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.
摘要翻译：一种制造图像传感器的方法包括在半导体衬底的有源像素传感器区域中形成器件隔离区域和半导体衬底的划线路区域中的对准键，使得对准键的深度等于或小于设备隔离区域的深度。该方法还包括在有源像素传感器区域中形成光电转换器，对半导体衬底的后表面进行抛光并使用对准键在与半导体衬底的抛光后表面上的光电转换器对应的位置处形成微透镜。

4. 发明授权

US07880257B2 Image sensors including photoelectric converting units having multiple impurity regions 有权
标题翻译：图像传感器包括具有多个杂质区域的光电转换单元
公开(公告)号：US07880257B2
公开(公告)日：2011-02-01
申请号：US12699525
申请日：2010-02-03
申请人： Yun-ki Lee
发明人： Yun-ki Lee
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14609 , H01L27/14689
摘要： An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.
摘要翻译：图像传感器包括半导体层，以及第一和第二光电转换单元，其包括在半导体层中彼此间隔开并且在半导体层中处于相当深度的第一和第二杂质区，每个杂质区包括上部区域和下部区域。第一杂质区域的下部区域的宽度可以大于第二杂质区域的下部区域的宽度，第一和第二杂质区域的上部区域的宽度相等。

5. 发明授权

US07687875B2 Image sensors including photoelectric converting units having multiple impurity regions 有权
标题翻译：图像传感器包括具有多个杂质区域的光电转换单元
公开(公告)号：US07687875B2
公开(公告)日：2010-03-30
申请号：US12180228
申请日：2008-07-25
申请人： Yun-ki Lee
发明人： Yun-ki Lee
IPC分类号： H01L29/417 , H01L29/74 , H01L31/111 , H01L29/732 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/062 , H01L31/113 , H01L31/06
CPC分类号： H01L27/14609 , H01L27/14689
摘要： An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.
摘要翻译：图像传感器包括半导体层，以及第一和第二光电转换单元，其包括在半导体层中彼此间隔开并且在半导体层中处于相当深度的第一和第二杂质区，每个杂质区包括上部区域和下部区域。第一杂质区域的下部区域的宽度可以大于第二杂质区域的下部区域的宽度，第一和第二杂质区域的上部区域的宽度相等。

6. 发明申请

US20090072337A1 IMAGE SENSORS INCLUDING PHOTOELECTRIC CONVERTING UNITS HAVING MULTIPLE IMPURITY REGIONS AND METHODS OF FORMING THE SAME 有权
标题翻译：包含具有多个模糊区域的光电转换单元的图像传感器及其形成方法
公开(公告)号：US20090072337A1
公开(公告)日：2009-03-19
申请号：US12180228
申请日：2008-07-25
申请人： Yun-ki Lee
发明人： Yun-ki Lee
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/14689
摘要： An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.
摘要翻译：图像传感器包括半导体层，以及第一和第二光电转换单元，其包括在半导体层中彼此间隔开并且在半导体层中处于相当深度的第一和第二杂质区，每个杂质区包括上部区域和下部区域。第一杂质区域的下部区域的宽度可以大于第二杂质区域的下部区域的宽度，第一和第二杂质区域的上部区域的宽度相等。

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