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1. 发明授权

US06518828B2 Pumping voltage regulation circuit 有权
公开(公告)号：US06518828B2
公开(公告)日：2003-02-11
申请号：US10013529
申请日：2001-12-13
申请人： Sung-Whan Seo , Im-Cheol Ha
发明人： Sung-Whan Seo , Im-Cheol Ha
IPC分类号： H03K301
CPC分类号： H02M3/073
摘要： A pumping voltage regulation circuit adjusts a pumping voltage to maintain a preset voltage level regardless of the variation of a supply voltage. The pumping voltage regulation circuit includes a clock adjusting unit for producing a second clock signal according to a combination of a first clock signal and a first control signal or that of the first clock signal and a second control signal, a pumping voltage generating unit for producing a pumping voltage in response to the second clock signal outputted from the clock adjusting unit, a diode chain for dividing the pumping voltage and a sense amplifier for outputting the second control signal by comparing an output voltage of the diode chain with a reference voltage.

2. 发明申请

US20120224432A1 OVER-ERASE VERIFICATION AND REPAIR METHODS FOR FLASH MEMORY 有权
标题翻译： FLASH存储器的过滤验证和修复方法
公开(公告)号：US20120224432A1
公开(公告)日：2012-09-06
申请号：US13039692
申请日：2011-03-03
申请人： Chung-Meng Huang , Im-Cheol Ha
发明人： Chung-Meng Huang , Im-Cheol Ha
IPC分类号： G11C16/06
CPC分类号： G11C16/28 , G11C16/3409 , G11C16/3445
摘要： Over-erase verification and repair methods for a flash memory. The flash memory is an NOR type stack flash. The disclosed method performs an over-erased column verification test on a sector of the NOR type stack flash column by column. An over-erased column repair process is individually performed on the columns which do not pass the over-erased column verification test. For the columns processed by the over-erased column repair process but still incapable of passing the over-erased column verification test, an over-erased bit verification test is performed on each bit thereof. The bits incapable of passing the over-erased bit verification test are further processed by an over-erased repair process individually.
摘要翻译：闪存的擦除验证和修复方法。闪存是NOR型堆栈闪存。所公开的方法在逐列的NOR型堆栈闪存的扇区上执行过擦除的列校验测试。在不通过超过列验证测试的列上单独执行超擦除色谱柱修复过程。对于由过度删除的列修复进程处理的列，但是仍然不能通过过擦除的列校验测试，对其每个位执行过擦除位验证测试。无法通过过擦除位验证测试的位进一步通过过度擦除的修复过程单独进行处理。

3. 发明授权

US08462554B2 Over-erase verification and repair methods for flash memory 有权
标题翻译：闪存的过度擦除验证和修复方法
公开(公告)号：US08462554B2
公开(公告)日：2013-06-11
申请号：US13039692
申请日：2011-03-03
申请人： Chung-Meng Huang , Im-Cheol Ha
发明人： Chung-Meng Huang , Im-Cheol Ha
IPC分类号： G11C16/06 , G11C16/28
CPC分类号： G11C16/28 , G11C16/3409 , G11C16/3445
摘要： Over-erase verification and repair methods for a flash memory. The flash memory is an NOR type stack flash. The disclosed method performs an over-erased column verification test on a sector of the NOR type stack flash column by column. An over-erased column repair process is individually performed on the columns which do not pass the over-erased column verification test. For the columns processed by the over-erased column repair process but still incapable of passing the over-erased column verification test, an over-erased bit verification test is performed on each bit thereof. The bits incapable of passing the over-erased bit verification test are further processed by an over-erased repair process individually.
摘要翻译：闪存的擦除验证和修复方法。闪存是NOR型堆栈闪存。所公开的方法在逐列的NOR型堆栈闪存的扇区上执行过擦除的列校验测试。在不通过超过列验证测试的列上单独执行超擦除色谱柱修复过程。对于由过度删除的列修复进程处理的列，但是仍然不能通过过擦除的列校验测试，对其每个位执行过擦除位验证测试。无法通过过擦除位验证测试的位进一步通过过度擦除的修复过程单独进行处理。

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