专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5434814A Circuit for repairing defective read only memories with redundant NAND string 失效
标题翻译：用冗余NAND串修复有缺陷的只读存储器的电路
公开(公告)号：US5434814A
公开(公告)日：1995-07-18
申请号：US132175
申请日：1993-10-06
申请人： Sung-Hee Cho , Kang-Deog Suh , Hyong-Gon Lee , Jae-Yeong Do
发明人： Sung-Hee Cho , Kang-Deog Suh , Hyong-Gon Lee , Jae-Yeong Do
IPC分类号： G11C17/00 , G11C17/18 , G11C29/00 , G11C29/04 , H01L27/00 , G11C11/40
CPC分类号： G11C29/822
摘要： A mask ROM having a defect repairing function stores address signals corresponding to a defective memory cell and then, selectively activates either a redundancy row decoder or a row decoder according to whether the address signals stored are identical to address signals supplied externally. The mask ROM includes first and second memory cell arrays formed by grouping in a word line direction a plurality of read only memory cells arranged in rows and columns; first and second row decoders for combining row address signals supplied externally so as to selectively drive the word lines of the first and second memory cell arrays; and a row decoder selector for storing therein address signals according to a row block including a defective memory cell, of the first memory cell array so as to inactivate the first row decoder and activate the second row decoder when the external row address signals are equal to the address signals stored in the row decoder selector.
摘要翻译：具有缺陷修复功能的掩模ROM存储对应于缺陷存储单元的地址信号，然后根据存储的地址信号是否与外部提供的地址信号相同，选择性地激活冗余行解码器或行解码器。掩模ROM包括通过在字线方向上分组以行和列排列的多个只读存储器单元形成的第一和第二存储单元阵列; 第一和第二行解码器，用于组合外部提供的行地址信号，以选择性地驱动第一和第二存储单元阵列的字线; 以及行解码器选择器，用于根据包括第一存储单元阵列的缺陷存储单元的行块存储其中的地址信号，以便在外部行地址信号等于第一行解码器时使第一行解码器失活，并激活第二行解码器存储在行解码器选择器中的地址信号。

2. 发明授权

US5635747A Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage 失效
标题翻译：具有适用于高速运行和低电源电压的电池结构的非易失性半导体存储器
公开(公告)号：US5635747A
公开(公告)日：1997-06-03
申请号：US481098
申请日：1995-06-07
申请人： Hyong-Gon Lee , Sang-Ki Hwang , Cheol-Ung Jang , Young-Wi Ko , Sung-Hee Cho
发明人： Hyong-Gon Lee , Sang-Ki Hwang , Cheol-Ung Jang , Young-Wi Ko , Sung-Hee Cho
IPC分类号： G11C17/00 , G11C16/04 , G11C17/12 , H01L21/8247 , H01L27/112 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76 , H01L29/94
CPC分类号： H01L27/115 , G11C17/123 , H01L27/112
摘要： A nonvolatile semiconductor memory with a unit cell structure suitable for high speed operation and a low power supply voltage. The nonvolatile semiconductor memory includes a switching circuit including block select transistors connected by its respective terminal to a corresponding bit line. This switching circuit transmits a signal only when a string to which the switching circuit corresponds is selected. A second active region having a different impurity concentration from a first active region constituting source and drain regions of memory transistors is formed at a substrate contact portion of a bit line contact portion where the memory string and bit line are connected. The impurity concentration of the second active region is lower than that of the first active region.
摘要翻译：具有适用于高速运行和低电源电压的单元结构的非易失性半导体存储器。非易失性半导体存储器包括切换电路，其包括通过其相应端子连接到相应位线的块选择晶体管。该切换电路仅在选择与开关电路对应的串时发送信号。在构成存储晶体管的源区和漏区的第一有源区具有不同杂质浓度的第二有源区形成在连接存储器串和位线的位线接触部的衬底接触部分。第二有源区的杂质浓度低于第一有源区的杂质浓度。

3. 发明授权

US07218371B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US07218371B2
公开(公告)日：2007-05-15
申请号：US11166010
申请日：2005-06-24
申请人： Woo-Suk Chung , Chi-Woo Kim , Bo-Young An , Hyong-Gon Lee , Sung-Hee Cho
发明人： Woo-Suk Chung , Chi-Woo Kim , Bo-Young An , Hyong-Gon Lee , Sung-Hee Cho
IPC分类号： G02F1/1345 , G02F1/1343
CPC分类号： G02F1/133512 , G02F1/134336 , G02F1/1345 , G02F2001/133337 , G02F2001/133388 , G02F2001/133397 , G09G3/3648 , G09G2330/08 , G09G2330/10
摘要： In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrodes, and an image defect area caused by the impurity ions is screened with the black matrix.
摘要翻译：在液晶显示器中，多个栅极线和数据线设置在包括显示区域作为屏幕的第一基板上，以及在显示区域外部的外围区域，其中多个像素电极电连接到栅极线和数据线，并且一些像素电极延伸到位于周边区域中; 并且可选地，在与第一基板相对设置的第二基板上形成黑矩阵，用于屏蔽位于周边区域中的像素电极的延伸部分，在第一和第二基板上形成定向膜的摩擦方向朝向位于周边区域中的像素电极的延伸部分，使得取向膜表面上的杂质离子沿着摩擦方向行进，以在像素电极的延伸部分处停止，并且筛选由杂质离子引起的图像缺陷区域与黑色矩阵。

4. 发明授权

US5528537A Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage 失效
标题翻译：具有适用于高速运行和低电源电压的电池结构的非易失性半导体存储器
公开(公告)号：US5528537A
公开(公告)日：1996-06-18
申请号：US505038
申请日：1995-07-21
申请人： Hyong-Gon Lee , Sang-Ki Hwang , Cheol-Ung Jang , Young-Wi Ko , Sung-Hee Cho
发明人： Hyong-Gon Lee , Sang-Ki Hwang , Cheol-Ung Jang , Young-Wi Ko , Sung-Hee Cho
IPC分类号： G11C17/00 , G11C16/04 , G11C17/12 , H01L21/8247 , H01L27/112 , H01L27/115 , H01L29/788 , H01L29/792 , G11C11/34
CPC分类号： H01L27/115 , G11C17/123 , H01L27/112
摘要： A nonvolatile semiconductor memory with a unit cell structure suitable for high speed operation and a low power supply voltage. The nonvolatile semiconductor memory includes a switching circuit including block select transistors connected by its respective terminal to a corresponding bit line. This switching circuit transmits a signal only when a string to which the switching circuit corresponds is selected. A second active region having a different impurity concentration from a first active region constituting source and drain regions of memory transistors is formed at a substrate contact portion of a bit line contact portion where the memory string and bit line are connected. The impurity concentration of the second active region is lower than that of the first active region.
摘要翻译：具有适用于高速运行和低电源电压的单元结构的非易失性半导体存储器。非易失性半导体存储器包括切换电路，其包括通过其相应端子连接到相应位线的块选择晶体管。该切换电路仅在选择与开关电路对应的串时发送信号。在构成存储晶体管的源区和漏区的第一有源区具有不同杂质浓度的第二有源区形成在连接存储器串和位线的位线接触部的衬底接触部分。第二有源区的杂质浓度低于第一有源区的杂质浓度。

5. 发明授权

US5469450A Nonvolatile memory device including multi-ECC circuit 失效
标题翻译：非易失性存储器件包括多ECC电路
公开(公告)号：US5469450A
公开(公告)日：1995-11-21
申请号：US099331
申请日：1993-07-30
申请人： Sung-Hee Cho , Hyong-Gon Lee
发明人： Sung-Hee Cho , Hyong-Gon Lee
IPC分类号： G11C17/00 , G06F11/10 , G11C16/02 , G11C16/06 , G11C29/00 , G11C29/04 , G11C29/42
CPC分类号： G06F11/1008 , G06F11/1076
摘要： A nonvolatile memory device containing sub memory arrays and distinct associated peripheral sub array circuits containing error checking and correction circuits that are similarly positioned according to the sub array. The memory device is configured so that a single mask change allows the device to be manufactured as a normal mode device or a page mode device.
摘要翻译：一种包含副存储器阵列和不同的相关联的外围子阵列电路的非易失性存储器件，其包含根据子阵列类似地定位的错误检查和校正电路。存储器件被配置为使得单个掩模改变允许将器件制造为普通模式器件或页模式器件。

6. 发明授权

US5357530A Data output control circuit 失效
标题翻译：数据输出控制电路
公开(公告)号：US5357530A
公开(公告)日：1994-10-18
申请号：US934249
申请日：1992-08-25
申请人： Hyong-Gon Lee , Sung-Hee Cho
发明人： Hyong-Gon Lee , Sung-Hee Cho
IPC分类号： G11C11/409 , G06F11/10 , G11C7/10 , G11C7/22 , G11C11/401 , G11C29/00 , G11C29/42
CPC分类号： G06F11/1008 , G06F11/1076 , G11C7/1051 , G11C7/1057 , G11C7/22
摘要： A data output control circuit of a semiconductor memory device. The data output control circuit comprises an input signal detector for detecting a desired signal, a controller for selecting one of a plurality of data output buffers and a data output controller for driving the selected data output buffer. A signal for driving and controlling the data output buffer is enabled after the data of a given memory cell is supplied to an input terminal of the data output buffer so that any unnecessary transition operation of data can be eliminated to reduce the current dissipation of a semiconductor memory chip and to prevent the deterioration of data access time for the purpose of improving the yield of the semiconductor memory chip.
摘要翻译：半导体存储器件的数据输出控制电路。数据输出控制电路包括用于检测所需信号的输入信号检测器，用于选择多个数据输出缓冲器中的一个的控制器和用于驱动所选数据输出缓冲器的数据输出控制器。在给定存储单元的数据被提供给数据输出缓冲器的输入端之后，启用用于驱动和控制数据输出缓冲器的信号，从而可以消除数据的任何不必要的转换操作以减少半导体的电流耗散以防止数据存取时间的恶化，以提高半导体存储芯片的产量。

7. 发明申请

US20070229747A1 LIQUID CRYSTAL DISPLAY 有权
标题翻译：液晶显示器
公开(公告)号：US20070229747A1
公开(公告)日：2007-10-04
申请号：US11743378
申请日：2007-05-02
申请人： Woo-Suk Chung , Chi-Woo Kim , Bo-Young An , Hyong-Gon Lee , Sung-Hee Cho
发明人： Woo-Suk Chung , Chi-Woo Kim , Bo-Young An , Hyong-Gon Lee , Sung-Hee Cho
IPC分类号： G02F1/1343
CPC分类号： G02F1/133512 , G02F1/134336 , G02F1/1345 , G02F2001/133337 , G02F2001/133388 , G02F2001/133397 , G09G3/3648 , G09G2330/08 , G09G2330/10
摘要： In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrode, and an image defect area caused by the impurity ions is screened with the black matrix.
摘要翻译：在液晶显示器中，多个栅极线和数据线设置在包括显示区域作为屏幕的第一基板上，以及在显示区域外部的外围区域，其中多个像素电极电连接到栅极线和数据线，并且一些像素电极延伸到位于周边区域中; 并且可选地，在与第一基板相对设置的第二基板上形成黑矩阵，用于屏蔽位于周边区域中的像素电极的延伸部分，在第一和第二基板上形成定向膜的摩擦方向朝向位于外围区域的像素电极的延伸部分，使得取向膜表面上的杂质离子沿着摩擦方向行进，以在像素电极的延伸部分停止，并且屏蔽由杂质离子引起的图像缺陷区域与黑色矩阵。

8. 发明授权

US5313425A Semiconductor memory device having an improved error correction capability 失效
标题翻译：半导体存储器件具有改进的纠错能力
公开(公告)号：US5313425A
公开(公告)日：1994-05-17
申请号：US051408
申请日：1993-04-23
申请人： Hyong-Gon Lee , Sung-Hee Cho , Se-Jin Kim
发明人： Hyong-Gon Lee , Sung-Hee Cho , Se-Jin Kim
IPC分类号： G06F11/16 , G06F11/10 , G11C29/00 , G11C29/42 , G11C13/00
CPC分类号： G11C29/88 , G06F11/1008
摘要： A semiconductor memory device which is comprised of a plurality m of electrically isolated data memory sub-arrays for storing data bits and a plurality k of electrically isolated parity memory sub-arrays for storing parity bits, wherein each of the data and parity memory sub-arrays includes a plurality of memory cells arranged in a matrix of rows and columns, with the memory cells in each row connected to a common word line and the memory cells in each column connected to a common bit line. Row address decoders function to activate a selected word line in each of the memory sub-arrays, and column address decoders, in combination with column selection circuitry, function to couple a selected bit line in each of the memory sub-arrays to a plurality m of sense amplifiers, which function to sense the voltage level of respective ones of the selected bit lines, and produce output data and parity bits representative of these sensed voltage levels. An error checking and correction circuit compares the output data and parity bits in order to detect and correct errors in the output data bits. Because of the unique architecture of the semiconductor memory device of this invention, defects in word lines or bit lines are confined to a single bit, thereby rendering these defects easily reparable by means of an ECC circuit alone, and thus dispensing with the need for a redundant memory circuit.
摘要翻译：一种半导体存储器件，包括用于存储数据位的多个电绝缘数据存储器子阵列和用于存储奇偶校验位的多个电隔离奇偶校验存储器子阵列，其中数据和奇偶校验存储器子阵列中的每一个，阵列包括以行和列的矩阵排列的多个存储单元，每行中的存储单元连接到公共字线，并且每列中的存储单元连接到公共位线。行地址解码器用于激活每个存储器子阵列中的所选择的字线以及与列选择电路组合的列地址解码器，用于将每个存储器子阵列中的选定位线耦合到多个m 感测放大器，其用于感测所选位线中的相应位线的电压电平，并且产生表示这些感测电压电平的输出数据和奇偶校验位。错误检查和校正电路比较输出数据和奇偶校验位，以便检测和纠正输出数据位中的错误。由于本发明的半导体存储器件的独特架构，字线或位线中的缺陷被限制在单个位，从而使得这些缺陷易于通过ECC电路单独进行修复，从而不需要一个冗余存储电路。

9. 发明申请

US20050237466A1 Liquid crystal display 有权
公开(公告)号：US20050237466A1
公开(公告)日：2005-10-27
申请号：US11166010
申请日：2005-06-24
申请人： Woo-Suk Chung , Chi-Woo Kim , Bo-Young An , Hyong-Gon Lee , Sung-Hee Cho
发明人： Woo-Suk Chung , Chi-Woo Kim , Bo-Young An , Hyong-Gon Lee , Sung-Hee Cho
IPC分类号： G02F1/1337 , G02F1/1333 , G02F1/1335 , G02F1/1343 , G02F1/1345 , G02F1/1362
CPC分类号： G02F1/133512 , G02F1/134336 , G02F1/1345 , G02F2001/133337 , G02F2001/133388 , G02F2001/133397 , G09G3/3648 , G09G2330/08 , G09G2330/10
摘要： In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrodes, and an image defect area caused by the impurity ions is screened with the black matrix.

10. 发明授权

US06927830B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US06927830B2
公开(公告)日：2005-08-09
申请号：US10178016
申请日：2002-06-20
申请人： Woo-Suk Chung , Chi-Woo Kim , Bo-Young An , Hyong-Gon Lee , Sung-Hee Cho
发明人： Woo-Suk Chung , Chi-Woo Kim , Bo-Young An , Hyong-Gon Lee , Sung-Hee Cho
IPC分类号： G02F1/1337 , G02F1/1333 , G02F1/1335 , G02F1/1343 , G02F1/1345 , G02F1/1362 , G09G3/30 , G09G3/36
CPC分类号： G02F1/133512 , G02F1/134336 , G02F1/1345 , G02F2001/133337 , G02F2001/133388 , G02F2001/133397 , G09G3/3648 , G09G2330/08 , G09G2330/10
摘要： In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrodes, and an image defect area caused by the impurity ions is screened with the black matrix.
摘要翻译：在液晶显示器中，多个栅极线和数据线设置在包括显示区域作为屏幕的第一基板上，以及在显示区域外部的外围区域，其中多个像素电极电连接到栅极线和数据线，并且一些像素电极延伸到位于周边区域中; 并且可选地，在与第一基板相对设置的第二基板上形成黑矩阵，用于屏蔽位于周边区域中的像素电极的延伸部分，在第一和第二基板上形成定向膜的摩擦方向朝向位于周边区域中的像素电极的延伸部分，使得取向膜表面上的杂质离子沿着摩擦方向行进，以在像素电极的延伸部分处停止，并且筛选由杂质离子引起的图像缺陷区域与黑色矩阵。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式