专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07724594B2 Leakage current control device of semiconductor memory device 失效
标题翻译：半导体存储器件泄漏电流控制装置
公开(公告)号：US07724594B2
公开(公告)日：2010-05-25
申请号：US12044484
申请日：2008-03-07
申请人： Sung Soo Xi , Chae Kyu Jang , Hoe Kwon Jeong
发明人： Sung Soo Xi , Chae Kyu Jang , Hoe Kwon Jeong
IPC分类号： G11C7/20 , G11C7/12
CPC分类号： G11C11/419 , G11C7/12 , G11C11/4094
摘要： A leakage current control device of a semiconductor memory device is provided to effectively remove leakage current flowing from a bit line to a word line when a process defect is generated by gate residues of the semiconductor memory device, thereby reducing unnecessary current consumption. In the leakage current control device, the bit line boosted to a voltage level of core voltage/2 is controlled at a ground voltage level during a precharge period to remove unnecessary leakage current flowing from the bit line to a word line bridge.
摘要翻译：提供半导体存储器件的漏电流控制装置，用于当通过半导体存储器件的栅极残留产生工艺缺陷时，有效地去除从位线流向字线的漏电流，从而减少不必要的电流消耗。在泄漏电流控制装置中，在预充电期间将升压到芯电压/ 2的电压电平的位线控制在接地电压电平，以去除从位线流向字线桥的不必要的漏电流。

2. 发明申请

US20080298151A1 Sense Amplifier Overdriving Circuit and Semiconductor Device Using the Same 有权
标题翻译：感应放大器过驱动电路及使用其的半导体器件
公开(公告)号：US20080298151A1
公开(公告)日：2008-12-04
申请号：US12189253
申请日：2008-08-11
申请人： Sung Soo Xi
发明人： Sung Soo Xi
IPC分类号： G11C7/06
CPC分类号： G11C7/08 , G11C11/4091
摘要： A sense amplifier overdriving circuit includes a first voltage driver which supplies an internal voltage from an internal voltage terminal to a sense amplifier in response to a first enabling signal, a logic unit which logically operates a block select signal for selection of a cell block and a second enabling signal enabled for a predetermined time after enabling of the first enabling signal, and outputs the resultant signal, and a second voltage driver which supplies an external voltage to the internal voltage terminal in response to the signal output from the logic unit. A semiconductor device using the sense amplifier overdriving circuit is also disclosed.
摘要翻译：感测放大器过驱动电路包括：第一电压驱动器，其响应于第一使能信号将内部电压端从内部电压端提供给读出放大器;逻辑单元，逻辑运算用于选择单元块的块选择信号;以及响应于从逻辑单元输出的信号，第二使能信号使能第一使能信号之后的预定时间并输出所得到的信号;以及第二电压驱动器，其向内部电压端提供外部电压。还公开了一种使用读出放大器过驱动电路的半导体器件。

3. 发明授权

US07697339B2 Sense amplifier overdriving circuit and semiconductor device using the same 有权
标题翻译：感应放大器过驱动电路和使用其的半导体器件
公开(公告)号：US07697339B2
公开(公告)日：2010-04-13
申请号：US12189253
申请日：2008-08-11
申请人： Sung Soo Xi
发明人： Sung Soo Xi
IPC分类号： G11C11/03
CPC分类号： G11C7/08 , G11C11/4091
摘要： A sense amplifier overdriving circuit includes a first voltage driver which supplies an internal voltage from an internal voltage terminal to a sense amplifier in response to a first enabling signal, a logic unit which logically operates a block select signal for selection of a cell block and a second enabling signal enabled for a predetermined time after enabling of the first enabling signal, and outputs the resultant signal, and a second voltage driver which supplies an external voltage to the internal voltage terminal in response to the signal output from the logic unit.
摘要翻译：感测放大器过驱动电路包括：第一电压驱动器，其响应于第一使能信号将内部电压端从内部电压端提供给读出放大器;逻辑单元，逻辑运算用于选择单元块的块选择信号;以及响应于从逻辑单元输出的信号，第二使能信号使能第一使能信号之后的预定时间并输出所得到的信号;以及第二电压驱动器，其向内部电压端提供外部电压。

4. 发明授权

US07120066B2 Memory device for multiplexing input and output operation 有权
标题翻译：用于复用输入和输出操作的存储器件
公开(公告)号：US07120066B2
公开(公告)日：2006-10-10
申请号：US10878327
申请日：2004-06-29
申请人： Sung Soo Xi
发明人： Sung Soo Xi
IPC分类号： G11C7/00
CPC分类号： G11C5/066 , G11C7/1012
摘要： A memory device for multiplexing an input/output operation prevents mis-operations by comparing the input addresses with the output data and improves operating speed by activating data corresponding to the input addresses by input address toggle. The memory device for multiplexing an input/output operation comprises an data output buffer, an address buffer, a comparison unit and a row activation control unit. The comparison unit compares an address outputted from the address buffer to the address bus with data inputted through the output data bus to the data output buffer, and outputs the comparison result. The row activation control unit generates a row active signal for activating a row path in response to the comparison result.
摘要翻译：用于多路复用输入/输出操作的存储器件通过将输入地址与输出数据进行比较来防止错误操作，并且通过通过输入地址切换来激活对应于输入地址的数据来提高操作速度。用于复用输入/输出操作的存储器件包括数据输出缓冲器，地址缓冲器，比较单元和行激活控制单元。比较单元将从地址缓冲器输出的地址与通过输出数据总线输入的数据与地址总线进行比较，并输出比较结果。行激活控制单元响应于比较结果生成用于激活行路径的行活动信号。

5. 发明授权

US07729190B2 Voltage control circuit, a voltage control method and a semiconductor memory device having the voltage control circuit 有权
标题翻译：电压控制电路，电压控制方法和具有电压控制电路的半导体存储器件
公开(公告)号：US07729190B2
公开(公告)日：2010-06-01
申请号：US11776607
申请日：2007-07-12
申请人： Sung Soo Xi
发明人： Sung Soo Xi
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C7/12 , G11C11/4074 , G11C11/4094 , G11C2207/2227
摘要： A semiconductor memory device includes a voltage control circuit providing different voltages as a precharge voltage in accordance with an active state and a standby stage. The semiconductor memory device is arranged in a peripheral region, whereby the different voltages can be provided as a precharge voltage in accordance with the active state and the standby state and thus leakage current is reduced and area efficiency is enhanced.
摘要翻译：半导体存储器件包括根据激活状态和待机级提供不同电压作为预充电电压的电压控制电路。半导体存储器件布置在周边区域中，由此可以根据活动状态和待机状态将不同的电压设置为预充电电压，从而降低漏电流并提高面积效率。

6. 发明授权

US07426150B2 Sense amplifier overdriving circuit and semiconductor device using the same 有权
标题翻译：感应放大器过驱动电路和使用其的半导体器件
公开(公告)号：US07426150B2
公开(公告)日：2008-09-16
申请号：US11275161
申请日：2005-12-16
申请人： Sung Soo Xi
发明人： Sung Soo Xi
IPC分类号： G11C7/02
CPC分类号： G11C7/08 , G11C11/4091
摘要： A sense amplifier overdriving circuit includes a first voltage driver which supplies an internal voltage from an internal voltage terminal to a sense amplifier in response to a first enabling signal, a logic unit which logically operates a block select signal for selection of a cell block and a second enabling signal enabled for a predetermined time after enabling of the first enabling signal, and outputs the resultant signal, and a second voltage driver which supplies an external voltage to the internal voltage terminal in response to the signal output from the logic unit. The sensing amplifier overdriving circuit may be used in a semiconductor device.
摘要翻译：感测放大器过驱动电路包括：第一电压驱动器，其响应于第一使能信号将内部电压端从内部电压端提供给读出放大器;逻辑单元，逻辑运算用于选择单元块的块选择信号;以及响应于从逻辑单元输出的信号，第二使能信号使能第一使能信号之后的预定时间并输出所得到的信号;以及第二电压驱动器，其向内部电压端提供外部电压。感测放大器过驱动电路可以用在半导体器件中。

7. 发明申请

US20080144420A1 VOLTAGE CONTROL CIRCUIT, A VOLTAGE CONTROL METHOD AND A SEMICONDUCTOR MEMORY DEVICE HAVING THE VOLTAGE CONTROL CIRCUIT 有权
标题翻译：电压控制电路，电压控制方法和具有电压控制电路的半导体存储器件
公开(公告)号：US20080144420A1
公开(公告)日：2008-06-19
申请号：US11776607
申请日：2007-07-12
申请人： Sung Soo Xi
发明人： Sung Soo Xi
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C7/12 , G11C11/4074 , G11C11/4094 , G11C2207/2227
摘要： The present invention relates to a semiconductor memory device and more particularly there is disclosed a voltage control circuit, a voltage control method and a semiconductor memory device having the voltage control circuit which can reduce leakage currents and improve precharge performance. The present invention includes a voltage control circuit providing different voltages as a precharge voltage in accordance with an active state and a standby stage by arranging the semiconductor memory device in a peripheral region, whereby the different voltages can be provided as a precharge voltage in accordance with the active state and the standby state and thus leakage current is reduced and area efficiency is enhanced.
摘要翻译：本发明涉及一种半导体存储器件，更具体地，公开了一种电压控制电路，电压控制方法和半导体存储器件，其具有可以减少泄漏电流并改善预充电性能的电压控制电路。本发明包括通过将半导体存储器件布置在外围区域中而根据活动状态和待机阶段提供不同电压作为预充电电压的电压控制电路，由此可以根据不同的电压提供不同的电压作为预充电电压激活状态和待机状态，从而降低漏电流，提高面积效率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式