会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Flash memory cell and method of manufacturing the same and programming/erasing/reading method of flash memory cell
    • 闪存单元及其制造方法和闪存单元的编程/擦除/读取方法
    • US20050121712A1
    • 2005-06-09
    • US11040969
    • 2005-01-21
    • Sung ParkYoung YouYong KimYoo Jeon
    • Sung ParkYoung YouYong KimYoo Jeon
    • G11C11/56G11C16/02G11C16/04H01L21/8247H01L27/115H01L29/788H01L29/792H01L21/336H01L27/108H01L29/76H01L29/94H01L31/119
    • H01L27/11521G11C11/5628G11C11/5635G11C11/5642G11C16/0458G11C2211/5612H01L27/115H01L29/7887
    • Disclosed is a flash memory cell and method of manufacturing the same, and programming/erasing/reading method thereof. The flash memory cell comprises a first tunnel oxide film formed at a given region of a semiconductor substrate, a first floating gate formed on the first tunnel oxide film, a second tunnel oxide film formed over the semiconductor substrate and along one sidewall of the first floating gate, a second floating g ate isolated from the first floating gate while contacting the second tunnel oxide film, a dielectric film formed on the first floating gate and the second floating gate, a control gate formed on the dielectric film, a first junction region formed in the semiconductor substrate below one side of the second tunnel oxide film, and a second junction region formed in the semiconductor substrate below one side of the first tunnel oxide film. Therefore, the present invention can implement 2-bit cell or 3-bit cell of a high density using the existing process technology. Further, it can reduce the manufacture cost and implement a high-integrated flash memory cell that is advantageous than a conventional flash memory cell in view of charge storage/retention as well as programming time.
    • 公开了一种闪存单元及其制造方法及其编程/擦除/读取方法。 闪速存储单元包括形成在半导体衬底的给定区域的第一隧道氧化物膜,形成在第一隧道氧化物膜上的第一浮栅,形成在半导体衬底上并沿着第一浮置区的一个侧壁的第二隧道氧化膜 栅极,与第一沟槽氧化膜接触时与第一浮栅隔离的第二浮置栅极,形成在第一浮置栅极和第二浮置栅极上的电介质膜,形成在电介质膜上的控制栅极,形成的第一结区域 在第二隧道氧化膜的一侧以下的半导体衬底中形成的第二结区,以及形成在第一隧道氧化膜的一侧以下的半导体衬底中的第二结区。 因此,本发明可以使用现有的工艺技术来实现高密度的2比特单元或3比特单元。 此外,鉴于电荷存储/保持以及编程时间,它可以降低制造成本并实现比传统闪存单元有利的高集成闪存单元。
    • 6. 发明申请
    • Method of manufacturing barrier ribs for pdp by etching of thick film using water-based solution and compositions therefor
    • 通过使用水溶液蚀刻厚膜及其组合物来制造pdp隔壁的方法
    • US20050156522A1
    • 2005-07-21
    • US10510036
    • 2002-04-08
    • Yong KimJin HwangYong Kim
    • Yong KimJin HwangYong Kim
    • H01J9/24H01J11/12H01J11/36H01J17/49
    • H01J9/242H01J11/12H01J11/36H01J2211/366
    • Disclosed is a method of manufacturing barrier ribs for a Plasma Display Panel (PDP), which includes the steps of forming a thick film (or, “green tape”) for barrier ribs on a glass or metal substrate by using composition for forming the barrier ribs, which contains water soluble components and solvent soluble components together a binder; forming a protective pattern film partially soluble or insoluble to the water based solution on the thick film; etching the thick film into a barrier rib shape by using solution or mixed solution containing ceramic powder as an etching accelerator, and sintering the etched thick film. This method causes rare environmental pollution, enables to make barrier ribs having fine and complex shapes and reduces material costs required for the barrier rib. Thus, the method may improve quality of DPD and reduce manufacture costs of the rear plate.
    • 公开了一种制造用于等离子体显示面板(PDP)的隔壁的方法,其包括以下步骤:通过使用用于形成屏障的组合物在玻璃或金属基板上形成用于隔壁的厚膜(或“生胶条”) 肋骨,其含有水溶性成分和溶剂可溶性成分在一起的粘合剂; 在厚膜上形成部分溶解或不溶于水基溶液的保护性图案膜; 通过使用含有陶瓷粉末作为蚀刻加速剂的溶液或混合溶液将厚膜蚀刻成隔壁形状,并烧结蚀刻的厚膜。 这种方法造成罕见的环境污染,能够形成具有精细和复杂形状的隔肋,并且减少隔壁所需的材料成本。 因此,该方法可以提高DPD的质量并降低后板的制造成本。
    • 8. 发明申请
    • Dual connection device for memory mediums and mobile communication terminals with the same
    • 用于存储介质的双连接设备和具有相同功能的移动通信终端
    • US20050233763A1
    • 2005-10-20
    • US11050802
    • 2005-02-07
    • Yong KimYong Kim
    • Yong KimYong Kim
    • H04B1/38G06K7/00H04M1/00H04M1/02
    • H04B1/3816G06K7/0021G06K7/0034H04M1/026
    • A dual connection device for memory mediums has a body portion electrically connected with a mobile communication terminal, a first receiving portion formed to the body portion for receiving therein a first memory medium, a second receiving portion formed to the body portion as to be arranged piled up to the first receiving portion for receiving therein a second memory medium, a first connection terminal installed in the first receiving portion so as to be electrically connected with a terminal of the first memory medium, and a second connection terminal installed in the second receiving portion so as to be electrically connected with a terminal of the second memory medium. Since a plurality of memory mediums are connected with a terminal mobile communication terminal by the connection device, it is possible to make the mobile communication terminal have a slim and compact size, accomplish a simplified assembly process, and obtain increased productivity and cost reduction due to simplification of assembly process.
    • 用于存储介质的双连接装置具有与移动通信终端电连接的主体部分,形成在主体部分上用于在其中容纳第一存储介质的第一接收部分,形成在主体部分上的第二接收部分,以布置成堆 直到第一接收部分用于在其中接收第二存储介质;第一连接端子,安装在第一接收部分中以便与第一存储介质的端子电连接,第二连接端子安装在第二接收部分中 以便与第二存储介质的端子电连接。 由于多个存储介质通过连接装置与终端移动通信终端连接,所以可以使移动通信终端具有纤细且紧凑的尺寸,实现简化的组装过程,并且由于 装配过程简化。