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1. 发明授权

US08901532B2 Non-volatile programmable device including phase change layer and fabricating method thereof 有权
标题翻译：包括相变层的非易失性可编程装置及其制造方法
公开(公告)号：US08901532B2
公开(公告)日：2014-12-02
申请号：US13466411
申请日：2012-05-08
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24 , G11C13/00
CPC分类号： H01L45/148 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/144
摘要： Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
摘要翻译：提供了一种非易失性可编程装置，包括第一端子，连接到第一端子的一部分的第一阈值开关层，连接到第一阈值开关层的相变层，连接到相变层的第二阈值开关层，连接到第二阈值开关层的第二端子，以及分别连接到相变层的侧部和与相变层的侧部相对的另一侧部的第三和第四端子。

2. 发明申请

US20120217465A1 NON-VOLATILE PROGRAMMABLE DEVICE INCLUDING PHASE CHANGE LAYER AND FABRICATING METHOD THEREOF 有权
标题翻译：非易失性可编程器件，包括相变层及其制造方法
公开(公告)号：US20120217465A1
公开(公告)日：2012-08-30
申请号：US13466411
申请日：2012-05-08
申请人： Seung Yun LEE , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
发明人： Seung Yun LEE , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
IPC分类号： H01L47/00
CPC分类号： H01L45/148 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/144
摘要： Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
摘要翻译：提供了一种非易失性可编程装置，包括第一端子，连接到第一端子的一部分的第一阈值开关层，连接到第一阈值开关层的相变层，连接到相变层的第二阈值开关层，连接到第二阈值开关层的第二端子，以及分别连接到相变层的侧部和与相变层的侧部相对的另一侧部的第三和第四端子。

3. 发明申请

US20100148141A1 NON-VOLATILE PROGRAMMABLE DEVICE INCLUDING PHASE CHANGE LAYER AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：非易失性可编程器件，包括相变层及其制造方法
公开(公告)号：US20100148141A1
公开(公告)日：2010-06-17
申请号：US12491465
申请日：2009-06-25
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
IPC分类号： H01L47/00
CPC分类号： H01L45/148 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/144
摘要： Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
摘要翻译：提供了一种非易失性可编程装置，包括第一端子，连接到第一端子的一部分的第一阈值开关层，连接到第一阈值开关层的相变层，连接到相变层的第二阈值开关层，连接到第二阈值开关层的第二端子，以及分别连接到相变层的侧部和与相变层的侧部相对的另一侧部的第三和第四端子。

4. 发明授权

US07911227B2 Programmable logic block of FPGA using phase-change memory device 有权
标题翻译：使用相变存储器件的FPGA的可编程逻辑块
公开(公告)号：US07911227B2
公开(公告)日：2011-03-22
申请号：US12633731
申请日：2009-12-08
申请人： Byoung Gon Yu , Yong-Joo Kim , Sung Min Yoon , Seung-Yun Lee , Young Sam Park , Soonwon Jung
发明人： Byoung Gon Yu , Yong-Joo Kim , Sung Min Yoon , Seung-Yun Lee , Young Sam Park , Soonwon Jung
IPC分类号： G06F7/38 , H03K19/173
CPC分类号： H03K19/17784 , H03K19/17728 , H03K19/17792
摘要： Provided is a programmable logic block of a field-programmable gate array (FPGA). The programmable logic block includes a pull-up access transistor connected to a power source, an up-phase-change memory device connected to the pull-up access transistor, a down-phase-change memory device connected to the up-phase-change memory device, an output terminal between the up-phase-change memory device and the down-phase-change memory device, and a pull-down access transistor connected to the down-phase-change memory device and a ground. The resistance values of the up-phase-change memory device and the down-phase-change memory device are individually programmed.
摘要翻译：提供了现场可编程门阵列（FPGA）的可编程逻辑块。可编程逻辑块包括连接到电源的上拉访问晶体管，连接到上拉存取晶体管的上变相存储器件，连接到上变相存储晶体管的下变相存储器件存储器件，上变相存储器件和下变相存储器件之间的输出端子以及连接到下变相存储器件和地的下拉存取晶体管。上变相存储器件和下变相存储器件的电阻值被单独编程。

5. 发明授权

US08445887B2 Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same 有权
标题翻译：使用相变存储器件的非易失性可编程开关器件及其制造方法
公开(公告)号：US08445887B2
公开(公告)日：2013-05-21
申请号：US12428628
申请日：2009-04-23
申请人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1206 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
摘要翻译：提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属电极层和设置成填充通孔的第二金属电极层。开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

6. 发明授权

US07977674B2 Phase change memory device and method of fabricating the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07977674B2
公开(公告)日：2011-07-12
申请号：US12240013
申请日：2008-09-29
申请人： Sung Min Yoon , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
IPC分类号： H01L29/08 , H01L29/18 , H01L29/02 , H01L47/00 , H01L21/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12＆nlE; x＆lt; lE; 0.32）形成，结晶状态被确定为稳定的单相，而不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变，从非晶形态到单稳态相转变州。结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

7. 发明申请

US20080237564A1 Phase-Change Memory Device Using Sb-Se Metal Alloy and Method of Fabricating the Same 有权
标题翻译：使用Sb-Se金属合金的相变存储器件及其制造方法
公开(公告)号：US20080237564A1
公开(公告)日：2008-10-02
申请号：US12063991
申请日：2006-08-30
申请人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
发明人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
摘要翻译：提供了使用具有低熔点和高结晶速度的相变材料的相变存储器件及其制造方法。相变存储器件包括与发热电极层接触的锑（Sb） - 硒（Se）硫属元素化物Sb>> 100-x>相变材料层通过孔暴露并填充孔。由于在相变材料层中使用Sb Se <100> x 比GST更高速度，低功耗的相变存储器件可以制造存储器件。

8. 发明申请

US20100108977A1 NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME 有权
标题翻译：使用相变存储器件的非易失性可编程开关器件及其制造方法
公开(公告)号：US20100108977A1
公开(公告)日：2010-05-06
申请号：US12428628
申请日：2009-04-23
申请人： Sung Min YOON , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min YOON , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L45/00 , H01L21/768 , H01L21/31
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1206 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
摘要翻译：提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属电极层和设置成填充通孔的第二金属电极层。开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

9. 发明申请

US20090184307A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20090184307A1
公开(公告)日：2009-07-23
申请号：US12240013
申请日：2008-09-29
申请人： Sung Min YOON , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
发明人： Sung Min YOON , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
IPC分类号： H01L21/06 , H01L45/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12 <= x <= 0.32）形成，从而确定晶体状态作为稳定的单相，不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变随着温度的升高直接转变为单稳态非晶态。结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

10. 发明申请

US20090146128A1 ELECTRICAL DEVICE USING PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY DEVICE USING SOLID STATE REACTION AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：使用相变材料的电气设备，使用固态反应的相变存储器件及其制造方法
公开(公告)号：US20090146128A1
公开(公告)日：2009-06-11
申请号：US12326776
申请日：2008-12-02
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

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