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1. 发明申请

US20100012915A1 PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20100012915A1
公开(公告)日：2010-01-21
申请号：US12425152
申请日：2009-04-16
申请人： Sung Min YOON , Byoung Gon YU , Soon Won JUNG , Seung Yun LEE , Young Sam PARK , Joon Suk LEE
发明人： Sung Min YOON , Byoung Gon YU , Soon Won JUNG , Seung Yun LEE , Young Sam PARK , Joon Suk LEE
IPC分类号： H01L47/00 , H01L21/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.
摘要翻译：提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层，形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。

2. 发明申请

US20110223716A1 ELECTRICAL DEVICE USING PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY DEVICE USING SOLID STATE REACTION AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：使用相变材料的电气设备，使用固态反应的相变存储器件及其制造方法
公开(公告)号：US20110223716A1
公开(公告)日：2011-09-15
申请号：US13110579
申请日：2011-05-18
申请人： Seung Yun LEE , Young Sam PARK , Sung Min YOON , Soon Won JUNG , Byoung Gon YU
发明人： Seung Yun LEE , Young Sam PARK , Sung Min YOON , Soon Won JUNG , Byoung Gon YU
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

3. 发明申请

US20110065246A1 EMBEDDED PHASE-CHANGE MEMORY AND METHOD OF FABRICATING THE SAME 有权
标题翻译：嵌入式相变存储器及其制造方法
公开(公告)号：US20110065246A1
公开(公告)日：2011-03-17
申请号：US12942255
申请日：2010-11-09
申请人： Seung-Yun LEE , Sang ouk RYU , Sung Min YOON , Young Sam PARK , Kyu-Jeong CHOI , Nam-Yeal LEE , Byoung-Gon YU
发明人： Seung-Yun LEE , Sang ouk RYU , Sung Min YOON , Young Sam PARK , Kyu-Jeong CHOI , Nam-Yeal LEE , Byoung-Gon YU
IPC分类号： H01L21/8249
CPC分类号： H01L27/0635 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/79 , H01L21/8249 , H01L27/2445 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , Y10S438/947
摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
摘要翻译：提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。双极晶体管包括由设置在集电极上的SiGe组成的基极。相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

4. 发明申请

US20100294327A1 THERMOELECTRIC DEVICE USING RADIANT HEAT AS HEAT SOURCE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用辐射热作为热源的热电装置及其制造方法
公开(公告)号：US20100294327A1
公开(公告)日：2010-11-25
申请号：US12773226
申请日：2010-05-04
申请人： Young Sam PARK , Jung Wook Lim , Moon Gyu Jang
发明人： Young Sam PARK , Jung Wook Lim , Moon Gyu Jang
IPC分类号： H01L35/20 , H01L35/00 , H01L21/30 , H01L35/34
CPC分类号： H01L35/30 , H01L35/32
摘要： Provided are a thermoelectric device using radiant heat as a heat source and a method of fabricating the same. In the thermoelectric device, an anti-reflection layer formed on a heat absorption layer causes as much radiant light as possible to be absorbed by the heat absorption layer without being reflected to the outside so that the radiant heat absorption efficiency can be improved. Also, in the thermoelectric device, an insulating layer formed on a heat dissipation layer and a first reflection layer formed on the insulating layer can prevent external radiant heat from being absorbed by the heat dissipation layer, and as much radiant heat transferred to the heat dissipation layer as possible can be dissipated away from the heat dissipation layer by a second reflection layer thermally connected with the heat dissipation layer so that the radiant heat emission efficiency can be improved.
摘要翻译：提供了使用辐射热作为热源的热电装置及其制造方法。在热电装置中，形成在吸热层上的防反射层使得尽可能多的辐射光被吸收层吸收，而不会反射到外部，从而可以提高辐射吸收效率。此外，在热电装置中，形成在散热层上的绝缘层和形成在绝缘层上的第一反射层可以防止外部辐射热被散热层吸收，并且多少辐射热传递到散热层可以通过与散热层热连接的第二反射层从散热层消散，从而可以提高辐射热发射效率。

5. 发明申请

US20110242437A1 WHITE LIGHT EMITTING DEVICE AND WHITE LIGHT SOURCE MODULE USING THE SAME 有权
标题翻译：白光发光装置和白光源模块使用相同
公开(公告)号：US20110242437A1
公开(公告)日：2011-10-06
申请号：US13097419
申请日：2011-04-29
申请人： Chul Hee YOO , Young June JEONG , Young Sam PARK , Seong Yeon HAN , Ho Yeon KIM , Hun Joo HAHM , Hyung Suk KIM
发明人： Chul Hee YOO , Young June JEONG , Young Sam PARK , Seong Yeon HAN , Ho Yeon KIM , Hun Joo HAHM , Hyung Suk KIM
IPC分类号： H01J1/62 , G02F1/13357 , G02F1/1335 , G09G5/10 , G09G3/36 , H04N3/14
CPC分类号： H05B33/12 , C09K11/0883 , C09K11/7731 , C09K11/7734 , F21K9/00 , G02F1/133603 , G02F1/133609 , H01L33/504 , Y02B20/181
摘要： A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram.
摘要翻译：一种白光发射装置，包括：主波长为443〜455nm的蓝色发光二极管芯片; 配置在蓝色发光二极管芯片周围的红色荧光体，由蓝色发光二极管芯片激发的红色荧光体发射红色光; 以及蓝色发光二极管芯片周围的绿色荧光体，由蓝色发光二极管芯片激发的绿色荧光体发出绿色光，其中，从红色荧光体发出的红色光线具有落在由四个坐标基于CIE1931色度图的点（0.5448,0.4544），（0.7079,0.2905），（0.6427,0.2905）和（0.4794,0.44633），并且从绿色荧光体发射的绿光具有落在限定的空间内的色坐标基于CIE 1931色度色彩图，分别为四点坐标（0.1270,0.8037），（0.4117,0.5861），（0.4197,0.5316）和（0.2555,0.5030）。

6. 发明申请

US20110202015A1 MEDICAL TISSUE EXTRACTION INSTRUMENT 有权
标题翻译：医用组织提取仪
公开(公告)号：US20110202015A1
公开(公告)日：2011-08-18
申请号：US13027746
申请日：2011-02-15
申请人： Young Sam PARK , Cheol Seung KIM
发明人： Young Sam PARK , Cheol Seung KIM
IPC分类号： A61M5/00
CPC分类号： A61B10/0283
摘要： Disclosed is a medical tissue extraction instrument, which can allow an inspector to accurately locate a fine needle at a desired tissue extraction position without any need for assistance while assuring stable tissue extraction. The medical tissue extraction instrument includes a tissue extraction controller to control the pressure of a suction tube connected to a fine needle during extraction of tissue. The tissue extraction controller includes a suction pressure generator taking the form of a footboard and adapted to control a suction operation of the suction tube by being pushed downward.
摘要翻译：公开了一种医疗组织提取仪器，其可以允许检查者在确保稳定的组织提取的同时不需要帮助而精确地将细针定位在期望的组织提取位置。医疗组织提取仪器包括组织提取控制器，用于在提取组织期间控制连接到细针的抽吸管的压力。组织提取控制器包括采取脚踏板形式的吸入压力发生器，其适于通过向下推动来控制吸管的抽吸操作。

7. 发明申请

US20110127558A1 LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光二极管封装及其制造方法
公开(公告)号：US20110127558A1
公开(公告)日：2011-06-02
申请号：US12944401
申请日：2010-11-11
申请人： Young Sam PARK , Hun Joo Hahm
发明人： Young Sam PARK , Hun Joo Hahm
IPC分类号： H01L33/58 , H01L33/48
CPC分类号： H01L33/54 , H01L24/97 , H01L33/505 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/12041 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting diode package and a method of manufacturing the same. A light emitting diode package according to an aspect of the invention may include: an LED chip; a body part having the LED chip mounted thereon; a pair of reflective parts extending from the body part to face each other while interposing the LED chip therebetween, and reflecting light emitted from the LED chip; and a molding part provided between the pair of reflective parts to encapsulate the LED chip and having a top surface whose central region is curved inwards.
摘要翻译：提供一种发光二极管封装及其制造方法。根据本发明的一个方面的发光二极管封装可以包括：LED芯片; 具有安装在其上的LED芯片的主体部分; 一对反射部件，其从身体部分延伸到彼此面对，同时插入LED芯片，并且反射从LED芯片发射的光; 以及设置在所述一对反射部件之间的模制部件，以封装所述LED芯片并具有其中心区域向内弯曲的顶表面。

8. 发明申请

US20120167936A1 THERMOELECTRIC DEVICE BASED ON SILICON NANOWIRES AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：基于硅纳米管的热电装置及其制造方法
公开(公告)号：US20120167936A1
公开(公告)日：2012-07-05
申请号：US13325082
申请日：2011-12-14
申请人： Young Sam PARK , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
发明人： Young Sam PARK , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
IPC分类号： H01L35/32 , H01L21/02 , B82Y40/00 , B82Y99/00 , H01L35/34
CPC分类号： H01L29/0673 , B82Y40/00 , H01L35/22 , H01L35/32
摘要： Disclosed are a thermoelectric device based on silicon nanowires including: a substrate; a silicon heat absorbing part absorbing heat, a silicon nanowire leg transferring heat, and a silicon heat releasing part releasing heat, which are formed on the substrate; and an insulating film with at least one or more holes, which is formed on the substrate including the silicon heat absorbing part, the silicon nanowire leg, and the silicon heat releasing part, and a method for manufacturing the same.
摘要翻译：公开了一种基于硅纳米线的热电装置，包括：基板; 吸收热的硅吸热部，传递热的硅纳米线支脚和释放热的硅散热部，形成在基板上; 以及具有至少一个以上的孔的绝缘膜及其制造方法，该绝缘膜形成在包括硅吸热部，硅纳米线支腿和硅散热部的基板上。

9. 发明申请

US20110192439A1 THERMOELECTRIC ARRAY 审中-公开
标题翻译：热电阵列
公开(公告)号：US20110192439A1
公开(公告)日：2011-08-11
申请号：US13022251
申请日：2011-02-07
申请人： Young Sam PARK , Moon Gyu Jang , Myung Sim Jun , Young Hoon Hyun
发明人： Young Sam PARK , Moon Gyu Jang , Myung Sim Jun , Young Hoon Hyun
IPC分类号： H01L35/30
CPC分类号： H01L35/30
摘要： Provided is a thermoelectric array including a plurality of thermoelectric elements arranged in m rows and n columns (each of m and n is an integer equal to or more than 1), each thermoelectric element including a heat absorption layer, a first heat sink layer, a second heat sink layer, a first-conductivity-type leg, and a second-conductivity-type leg formed on the same plane. The heat absorption layers of the thermoelectric elements adjacently disposed in a row or column direction are disposed adjacent to each other, and the first and second heat sink layers of the adjacent thermoelectric elements are disposed adjacent to each other. In this case, thermal interference between adjacent thermoelectric elements may be minimized, thereby obtaining a thermoelectric array having a high figure of merit.
摘要翻译：本发明提供一种热电阵列，其包括以m行n列（m和n为1以上的整数）排列的多个热电元件，热电元件包括吸热层，第1散热层，第二散热层，第一导电型脚和形成在同一平面上的第二导电型脚。相邻地配置在行或列方向上的热电元件的吸热层相邻配置，相邻的热电元件的第一和第二散热层相邻配置。在这种情况下，相邻热电元件之间的热干扰可以最小化，从而获得具有高品质因数的热电阵列。

10. 发明申请

US20110129668A1 ORGANIC-INORGANIC HYBRID NANOFIBER FOR THERMOELECTRIC APPLICATION AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：用于热电应用的有机无机混合纳米纤维及其形成方法
公开(公告)号：US20110129668A1
公开(公告)日：2011-06-02
申请号：US12958038
申请日：2010-12-01
申请人： Tae Hyoung ZYUNG , Moon Gyu JANG , Su Jae LEE , Young Sam PARK , Young Hoon HYUN
发明人： Tae Hyoung ZYUNG , Moon Gyu JANG , Su Jae LEE , Young Sam PARK , Young Hoon HYUN
IPC分类号： D01F8/00 , B29C47/04 , D01F1/09 , H01B1/12 , H01B1/02 , B82Y40/00 , B82Y30/00
CPC分类号： H01B1/128 , B82Y30/00 , D01D5/0007 , D01F1/10 , D01F6/76 , D01F6/96 , H01L35/14 , H01L35/26 , Y10T428/298
摘要： Provided is an organic-inorganic hybrid nanofiber including an inorganic semiconductor material in a nanoparticle or nanocrystal state, and a conductive polymer including the inorganic semiconductor material and having a lower thermal conductivity than the inorganic semiconductor material. The inorganic semiconductor material and the conductive polymer are arranged in a composite material type to have a thermoelectric property. Thus, the organic-inorganic hybrid nanofiber can be applied to a low-priced thermoelectric device having relatively high thermoelectric conversion efficiency.
摘要翻译：本发明提供一种纳米粒子或纳米晶状态的无机半导体材料和包含该无机半导体材料并具有比无机半导体材料低导热性的导电性聚合物的有机 - 无机混合纳米纤维。无机半导体材料和导电聚合物以复合材料类型排列以具有热电性能。因此，有机 - 无机混合纳米纤维可以应用于具有较高热电转换效率的低价热电装置。

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