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1. 发明申请

US20110129668A1 ORGANIC-INORGANIC HYBRID NANOFIBER FOR THERMOELECTRIC APPLICATION AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：用于热电应用的有机无机混合纳米纤维及其形成方法
公开(公告)号：US20110129668A1
公开(公告)日：2011-06-02
申请号：US12958038
申请日：2010-12-01
申请人： Tae Hyoung ZYUNG , Moon Gyu JANG , Su Jae LEE , Young Sam PARK , Young Hoon HYUN
发明人： Tae Hyoung ZYUNG , Moon Gyu JANG , Su Jae LEE , Young Sam PARK , Young Hoon HYUN
IPC分类号： D01F8/00 , B29C47/04 , D01F1/09 , H01B1/12 , H01B1/02 , B82Y40/00 , B82Y30/00
CPC分类号： H01B1/128 , B82Y30/00 , D01D5/0007 , D01F1/10 , D01F6/76 , D01F6/96 , H01L35/14 , H01L35/26 , Y10T428/298
摘要： Provided is an organic-inorganic hybrid nanofiber including an inorganic semiconductor material in a nanoparticle or nanocrystal state, and a conductive polymer including the inorganic semiconductor material and having a lower thermal conductivity than the inorganic semiconductor material. The inorganic semiconductor material and the conductive polymer are arranged in a composite material type to have a thermoelectric property. Thus, the organic-inorganic hybrid nanofiber can be applied to a low-priced thermoelectric device having relatively high thermoelectric conversion efficiency.
摘要翻译：本发明提供一种纳米粒子或纳米晶状态的无机半导体材料和包含该无机半导体材料并具有比无机半导体材料低导热性的导电性聚合物的有机 - 无机混合纳米纤维。无机半导体材料和导电聚合物以复合材料类型排列以具有热电性能。因此，有机 - 无机混合纳米纤维可以应用于具有较高热电转换效率的低价热电装置。

2. 发明申请

US20120160292A1 THERMOELECTRIC DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：热电装置及其制造方法
公开(公告)号：US20120160292A1
公开(公告)日：2012-06-28
申请号：US13323844
申请日：2011-12-13
申请人： Moon Gyu JANG , Young Sam Park , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
发明人： Moon Gyu JANG , Young Sam Park , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
IPC分类号： H01L35/14 , H01L35/34 , H01L35/32 , H01L37/00
CPC分类号： H01L35/32 , H01L35/22
摘要： A thermoelectric device includes: a substrate; a first nanowire of a first conductive type, which is formed on one side of the substrate; a second nanowire of a second conductive type, which is opposed to the first nanowire; a high temperature part commonly connected to one end of the first nanowire and one end of the second nanowire; low temperature parts connected to the other end of the first nanowire and the other end of the second nanowire, respectively; an insulation layer formed on the first nanowire and the second nanowire; a first metal layer formed on a portion of the insulation layer over the first nanowire, so as to control an electric potential of the first nanowire; and a second metal layer formed on a portion of the insulation layer over the second nanowire, so as to control an electric potential of the second nanowire.
摘要翻译：热电装置包括：基板; 第一导电类型的第一纳米线，其形成在基板的一侧上; 与第一纳米线相对的第二导电类型的第二纳米线; 通常连接到第一纳米线的一端和第二纳米线的一端的高温部分; 低温部分分别连接到第一纳米线的另一端和第二纳米线的另一端; 形成在所述第一纳米线和所述第二纳米线上的绝缘层; 形成在第一纳米线上的绝缘层的一部分上的第一金属层，以便控制第一纳米线的电位; 以及形成在第二纳米线上的绝缘层的一部分上的第二金属层，以便控制第二纳米线的电位。

3. 发明申请

US20130146114A1 THERMOELECTRIC ELEMENT 审中-公开
标题翻译：热电元件
公开(公告)号：US20130146114A1
公开(公告)日：2013-06-13
申请号：US13610981
申请日：2012-09-12
申请人： Moon Gyu JANG
发明人： Moon Gyu JANG
IPC分类号： H01L35/28
CPC分类号： H01L35/32
摘要： Disclosed is a thermoelectric element capable of being easily fabricated by employing a semiconductor CMOS process, and improving the thermoelectric efficiency by reducing thermal conductivity while improving electric conductivity between a heat absorption part and a heat emission unit. The thermoelectric element according to an exemplary embodiment of the present disclosure includes a common electrode configured to absorb heat; a first electrode and a second electrode formed on an identical plane to a plane of the common electrode and configured to emit heat; an N-leg connected between the common electrode and the first electrode and configured to supply electrons; and a P-leg connected between the common electrode and the second electrode and configured to supply holes, in which a barrier material for suppressing thermal conduction between the common electrode and the first and second electrodes is formed in the N-leg and the P-leg.
摘要翻译：公开了一种能够通过采用半导体CMOS工艺容易地制造的热电元件，并且通过降低热导率同时改善吸热部分和发热单元之间的导电性来提高热电效率。根据本公开的示例性实施例的热电元件包括构造成吸收热量的公共电极; 第一电极和第二电极，形成在与公共电极的平面相同的平面上并且被配置为发热; 连接在所述公共电极和所述第一电极之间并被配置为提供电子的N脚; 以及连接在所述公共电极和所述第二电极之间并被配置为提供空穴的P腿，其中在所述N腿和所述P-腿中形成用于抑制所述公共电极与所述第一和第二电极之间的热传导的阻挡材料，腿。

4. 发明申请

US20090215232A1 SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：肖特基BARRIER隧道晶体管及其制造方法
公开(公告)号：US20090215232A1
公开(公告)日：2009-08-27
申请号：US12434779
申请日：2009-05-04
申请人： Yark Yeon KIM , Seong Jae LEE , Moon Gyu JANG , Chel Jong CHOI , Myung Sim JUN , Byoung Chul PARK
发明人： Yark Yeon KIM , Seong Jae LEE , Moon Gyu JANG , Chel Jong CHOI , Myung Sim JUN , Byoung Chul PARK
IPC分类号： H01L21/338
CPC分类号： H01L29/47 , H01L29/458 , H01L29/4908 , H01L29/66545 , H01L29/66772 , H01L29/7839
摘要： Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.
摘要翻译：提供了一种肖特基势垒隧道晶体管及其制造方法，该晶体管能够使用在半导体 - 金属结上自然形成的肖特基隧道势垒作为隧道来最小化对肖特基势垒隧道晶体管的栅极侧壁的损坏所造成的漏电流屏障。该方法包括以下步骤：在绝缘基板上形成半导体沟道层; 在半导体沟道层上形成虚拟栅极; 在绝缘基板上的虚拟栅极的两侧形成源极和漏极; 去除虚拟门; 在去除所述伪栅极的侧壁上形成绝缘层; 并且在从其中去除虚拟栅极的空间中形成实际栅极。在使用伪栅极制造肖特基势垒隧道晶体管时，可以形成高k电介质栅极绝缘层和金属栅极，并且可以获得具有非常强反应性的金属层的硅化物的稳定特性。

5. 发明申请

US20120015467A1 BIOSENSOR USING NANODOT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用NANODOT的生物传感器及其制造方法
公开(公告)号：US20120015467A1
公开(公告)日：2012-01-19
申请号：US13240943
申请日：2011-09-22
申请人： Tae Youb KIM , Chil Seong AH , Chang Geun AHN , Han Young YU , Jong Heon YANG , Moon Gyu JANG
发明人： Tae Youb KIM , Chil Seong AH , Chang Geun AHN , Han Young YU , Jong Heon YANG , Moon Gyu JANG
IPC分类号： H01L21/335 , B82Y40/00
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

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