专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07074683B2 Semiconductor devices and methods of fabricating the same 失效
公开(公告)号：US07074683B2
公开(公告)日：2006-07-11
申请号：US10796754
申请日：2004-03-08
申请人： Sun-Ha Hwang , Young-Ok Kim , Cha-Dong Yeo
发明人： Sun-Ha Hwang , Young-Ok Kim , Cha-Dong Yeo
IPC分类号： H01L21/336
CPC分类号： H01L21/823814 , H01L21/823878
摘要： A semiconductor device comprises a device isolation layer disposed in a portion of a substrate of first conductivity type. An outline of the device isolation layer defines an active region of the substrate. An impurity diffused region of second conductivity type may be formed in a portion of the active region; and a silicide layer may be formed to cover the impurity diffused region of second conductivity type. The device isolation layer may include a recess formed therein to expose a portion of the substrate of first conductivity type adjacent to the impurity diffused region of second conductivity type. The silicide layer that is formed to cover the impurity diffused layer of second conductivity type may extend over and against the exposed region of the substrate of first conductivity type that was exposed by the recess of the device isolation layer.

2. 发明授权

US06730971B2 Semiconductor devices and methods of fabricating the same 有权
公开(公告)号：US06730971B2
公开(公告)日：2004-05-04
申请号：US10289721
申请日：2002-11-06
申请人： Sun-Ha Hwang , Young-Ok Kim , Cha-Dong Yeo
发明人： Sun-Ha Hwang , Young-Ok Kim , Cha-Dong Yeo
IPC分类号： H01L2976
CPC分类号： H01L21/823814 , H01L21/823878
摘要： A semiconductor device comprises a device isolation layer disposed in a portion of a substrate of first conductivity type. An outline of the device isolation layer defines an active region of the substrate. An impurity diffused region of second conductivity type may be formed in a portion of the active region; and a silicide layer may be formed to cover the impurity diffused region of second conductivity type. The device isolation layer may include a recess formed therein to expose a portion of the substrate of first conductivity type adjacent to the impurity diffused region of second conductivity type. The silicide layer that is formed to cover the impurity diffused layer of second conductivity type may extend over and against the exposed region of the substrate of first conductivity type that was exposed by the recess of the device isolation layer.

3. 发明授权

US07656008B2 Semiconductor devices and methods of forming the same 失效
标题翻译：半导体器件及其形成方法
公开(公告)号：US07656008B2
公开(公告)日：2010-02-02
申请号：US11968234
申请日：2008-01-02
申请人： Sun-Ha Hwang
发明人： Sun-Ha Hwang
IPC分类号： H01L29/8605
CPC分类号： H01L27/0629 , H01L21/743 , H01L21/76802 , H01L23/485 , H01L28/20 , H01L29/41766 , H01L29/665 , H01L29/7833 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Semiconductor devices are disclose that include a first doped region and a second doped region spaced apart from each other and defined within a same well of a semiconductor substrate. A gate insulating layer and a gate electrode are stacked on a channel region between the first and second doped regions. Spacers are on opposite sidewalls of gate electrode. A first surface metal silicide layer extends across a top surface of the first doped region adjacent to the spacer. A second surface metal silicide layer extends across a top surface of the second doped region adjacent to the spacer. At least one insulation layer extends across the semiconductor substrate including the first and second surface metal silicide layers. A first contact plug extends through the insulation layer and contacts the first surface metal silicide layer. A second contact plug extends through the insulation layer, the second surface metal silicide layer, and the second doped region into the well within the semiconductor substrate. Related methods of forming semiconductor devices are disclosed.
摘要翻译：公开了半导体器件，其包括彼此间隔开并限定在半导体衬底的同一阱内的第一掺杂区域和第二掺杂区域。栅极绝缘层和栅电极堆叠在第一和第二掺杂区域之间的沟道区上。隔板位于栅电极的相对侧壁上。第一表面金属硅化物层延伸穿过与间隔物相邻的第一掺杂区域的顶表面。第二表面金属硅化物层延伸穿过邻近间隔物的第二掺杂区的顶表面。至少一个绝缘层延伸穿过包括第一和第二表面金属硅化物层的半导体衬底。第一接触插塞延伸穿过绝缘层并接触第一表面金属硅化物层。第二接触插塞穿过绝缘层，第二表面金属硅化物层和第二掺杂区域延伸到半导体衬底内的阱中。公开了形成半导体器件的相关方法。

4. 发明授权

US08497570B2 Wafer, fabricating method of the same, and semiconductor substrate 失效
标题翻译：晶片，其制造方法和半导体衬底
公开(公告)号：US08497570B2
公开(公告)日：2013-07-30
申请号：US13178919
申请日：2011-07-08
申请人： Sun-Ha Hwang , Young-Soo Park , Sam-Jong Choi , Joon-Young Choi , Tae-Hyoung Koo
发明人： Sun-Ha Hwang , Young-Soo Park , Sam-Jong Choi , Joon-Young Choi , Tae-Hyoung Koo
IPC分类号： H01L29/36
CPC分类号： H01L21/3221 , H01L21/223 , H01L21/26513 , H01L29/78
摘要： A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.
摘要翻译：提供晶片，其制造方法和半导体衬底。晶片包括形成在第一表面的第一基底层，形成在与第一表面相反的第二表面的第二基底层，第二基底层具有比第一基底层更大的氧浓度，以及形成氧扩散保护层在第一基板层和第二基板层之间，氧扩散保护层位于比第二表面更靠近第一表面的位置。

5. 发明申请

US20120056304A1 Wafer, Fabricating Method Of The Same, And Semiconductor Substrate 失效
标题翻译：晶圆，其制造方法及半导体基板
公开(公告)号：US20120056304A1
公开(公告)日：2012-03-08
申请号：US13178919
申请日：2011-07-08
申请人： Sun-Ha Hwang , Young-Soo Park , Sam-Jong Choi , Joon-Young Choi , Tae-Hyoung Koo
发明人： Sun-Ha Hwang , Young-Soo Park , Sam-Jong Choi , Joon-Young Choi , Tae-Hyoung Koo
IPC分类号： H01L29/02
CPC分类号： H01L21/3221 , H01L21/223 , H01L21/26513 , H01L29/78
摘要： A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.
摘要翻译：提供晶片，其制造方法和半导体衬底。晶片包括形成在第一表面的第一基底层，形成在与第一表面相反的第二表面的第二基底层，第二基底层具有比第一基底层更大的氧浓度，以及形成氧扩散保护层在第一基板层和第二基板层之间，氧扩散保护层位于比第二表面更靠近第一表面的位置。

6. 发明申请

US20080169515A1 SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME 失效
标题翻译：半导体器件及其形成方法
公开(公告)号：US20080169515A1
公开(公告)日：2008-07-17
申请号：US11968234
申请日：2008-01-02
申请人： Sun-Ha Hwang
发明人： Sun-Ha Hwang
IPC分类号： H01L21/8234 , H01L27/06
CPC分类号： H01L27/0629 , H01L21/743 , H01L21/76802 , H01L23/485 , H01L28/20 , H01L29/41766 , H01L29/665 , H01L29/7833 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Semiconductor devices are disclose that include a first doped region and a second doped region spaced apart from each other and defined within a same well of a semiconductor substrate. A gate insulating layer and a gate electrode are stacked on a channel region between the first and second doped regions. Spacers are on opposite sidewalls of gate electrode. A first surface metal silicide layer extends across a top surface of the first doped region adjacent to the spacer. A second surface metal silicide layer extends across a top surface of the second doped region adjacent to the spacer. At least one insulation layer extends across the semiconductor substrate including the first and second surface metal silicide layers. A first contact plug extends through the insulation layer and contacts the first surface metal silicide layer. A second contact plug extends through the insulation layer, the second surface metal silicide layer, and the second doped region into the well within the semiconductor substrate. Related methods of forming semiconductor devices are disclosed.
摘要翻译：公开了半导体器件，其包括彼此间隔开并限定在半导体衬底的同一阱内的第一掺杂区域和第二掺杂区域。栅极绝缘层和栅电极堆叠在第一和第二掺杂区域之间的沟道区上。隔板位于栅电极的相对侧壁上。第一表面金属硅化物层延伸穿过与间隔物相邻的第一掺杂区域的顶表面。第二表面金属硅化物层延伸穿过邻近间隔物的第二掺杂区的顶表面。至少一个绝缘层延伸穿过包括第一和第二表面金属硅化物层的半导体衬底。第一接触插塞延伸穿过绝缘层并接触第一表面金属硅化物层。第二接触插塞穿过绝缘层，第二表面金属硅化物层和第二掺杂区域延伸到半导体衬底内的阱中。公开了形成半导体器件的相关方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式