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1. 发明申请

US20060141370A1 Photomasks and methods of manufacturing the same 审中-公开
标题翻译：光掩模及其制造方法
公开(公告)号：US20060141370A1
公开(公告)日：2006-06-29
申请号：US11319725
申请日：2005-12-29
申请人： Suk-Pil Kim , I-Hun Song , Won-Joo Kim , Seung-Hyuk Chang , Hoon Kim
发明人： Suk-Pil Kim , I-Hun Song , Won-Joo Kim , Seung-Hyuk Chang , Hoon Kim
IPC分类号： G21G5/00 , A61N5/00 , G21K5/00 , G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/22 , G03F1/24 , G21K2201/067
摘要： A photomask may include a reflection layer including a material capable of reflecting electromagnetic radiation, and at least one ion region. The ion region may be formed by implanting ions of an absorbent capable of absorbing electromagnetic radiation. The reflection layer may have a stack structure including a plurality of layers. The ions of the dopant may be implanted into at least one of the plurality of layers.
摘要翻译：光掩模可以包括包括能够反射电磁辐射的材料的反射层和至少一个离子区域。可以通过注入能够吸收电磁辐射的吸收剂的离子形成离子区域。反射层可以具有包括多个层的堆叠结构。掺杂剂的离子可以注入到多个层中的至少一个层中。

2. 发明申请

US20070285798A1 Off-axis projection optics and extreme ultraviolet lithograhy apparatus employing the same 有权
公开(公告)号：US20070285798A1
公开(公告)日：2007-12-13
申请号：US11889511
申请日：2007-08-14
申请人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
IPC分类号： G02B9/00 , B01J19/08 , G03F7/20
CPC分类号： G03F7/70233
摘要： Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢ ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢ ⁢ i 2 .

3. 发明授权

US07274513B2 Off-axis projection optics and extreme ultraviolet lithography apparatus employing the same 有权
公开(公告)号：US07274513B2
公开(公告)日：2007-09-25
申请号：US11358074
申请日：2006-02-22
申请人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
IPC分类号： G02B9/00
CPC分类号： G03F7/70233
摘要： Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢ ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢ ⁢ i 2 .

4. 发明申请

US20060134531A1 Mask for electromagnetic radiation and method of fabricating the same 审中-公开
标题翻译：电磁辐射掩模及其制造方法
公开(公告)号：US20060134531A1
公开(公告)日：2006-06-22
申请号：US11274474
申请日：2005-11-16
申请人： I-Hun Song , Won-Il Ryu , Suk-Pil Kim , Hoon Kim , Seung-Hyuk Chang , Won-Joo Kim , Young-Soo Park
发明人： I-Hun Song , Won-Il Ryu , Suk-Pil Kim , Hoon Kim , Seung-Hyuk Chang , Won-Joo Kim , Young-Soo Park
IPC分类号： G03C5/00 , G21K5/00 , G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A mask for lithography and a method of manufacturing the same. The mask may include a substrate, a reflection layer formed of a material capable of reflecting electromagnetic rays on the substrate and an absorption pattern formed in a desired pattern such that absorbing regions with respect to electromagnetic rays and windows through which electromagnetic rays pass are formed, wherein the absorption pattern includes at least one side surface that is adjacent to the window and is inclined with respect to the reflection layer. The method may include forming a reflection layer which is formed of a material capable of reflecting electromagnetic rays on a substrate, forming an absorption layer which is formed of a material capable of absorbing electromagnetic rays on the refection layer, and patterning the absorption layer to form an absorption pattern with at least one side surface adjacent to a window that has an inclined side surface with respect to the reflection layer.
摘要翻译：光刻用掩模及其制造方法。掩模可以包括基板，由能够在基板上反射电磁射线的材料形成的反射层和形成为期望图案的吸收图案，使得形成相对于电磁射线通过的电磁射线和窗口的吸收区域，其中所述吸收图案包括与所述窗口相邻并且相对于所述反射层倾斜的至少一个侧表面。该方法可以包括形成由能够在基板上反射电磁射线的材料形成的反射层，形成由能够在反射层上吸收电磁射线的材料形成的吸收层，以及图案化吸收层以形成具有与窗口相邻的至少一个侧表面的吸收图案，该窗口具有相对于反射层的倾斜侧表面。

5. 发明授权

US07474468B2 Off-axis projection optics and extreme ultraviolet lithography apparatus employing the same 有权
公开(公告)号：US07474468B2
公开(公告)日：2009-01-06
申请号：US11889511
申请日：2007-08-14
申请人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
IPC分类号： G02B9/00
CPC分类号： G03F7/70233
摘要： Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢ ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢ ⁢ i 2 .

6. 发明申请

US20060188822A1 Off-axis projection optics and extreme ultraviolet lithography apparatus employing the same 有权
公开(公告)号：US20060188822A1
公开(公告)日：2006-08-24
申请号：US11358074
申请日：2006-02-22
申请人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
IPC分类号： G03C5/00
CPC分类号： G03F7/70233
摘要： Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢ ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢ ⁢ i 2 .

7. 发明授权

US07301694B2 Off-axis projection optical system and extreme ultraviolet lithography apparatus using the same 有权
标题翻译：离轴投影光学系统和使用其的极紫外光刻设备
公开(公告)号：US07301694B2
公开(公告)日：2007-11-27
申请号：US11453775
申请日：2006-06-16
申请人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
IPC分类号： G02B5/08
CPC分类号： G03F7/70241 , G03F7/70941
摘要： Example embodiments are directed to an off-axis projection optical system including first and second mirrors that are off-axially arranged. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2.
摘要翻译：示例性实施例涉及一种离轴投影光学系统，其包括非轴向布置的第一和第二反射镜。第一反射镜的切向和矢状曲率半径可以分别为R 1t 1和R 1s 1。第二反射镜的切向和矢状曲率半径可以分别为R 2t 2和R 2s 3。从物点到第一反射镜10的光束的入射角度可以为1＆lt; 1＆gt;，从第一反射镜10反射到第二反射镜30的光束的入射角为 2 。 R 1，R 1，R 2，R 2，R 2，R 1，R 2， SUB>和i <2>可以满足以下等式<？in-line-formula description =“In-line Formulas”end =“lead”？> R 1t cos α-in-line-formula description =“In-line Formulas”end =“tail”？> R＆lt; 1s＆lt; 1＆lt; 1＆lt; 1＆lt; i <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”R 2s 2 = R 2t 2＆lt; 2＆lt; 2＆lt; 2＆lt;＆lt;行内公式描述= “直线公式”end =“tail”？>

8. 发明申请

US20060284113A1 Off-axis projection optical system and extreme ultraviolet lithography apparatus using the same 有权
标题翻译：离轴投影光学系统和使用其的极紫外光刻设备
公开(公告)号：US20060284113A1
公开(公告)日：2006-12-21
申请号：US11453775
申请日：2006-06-16
申请人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
IPC分类号： G21G5/00 , A61N5/00
CPC分类号： G03F7/70241 , G03F7/70941
摘要： An off-axis projection optical system including first and second mirrors that are off-axially arranged is provided. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation. R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2
摘要翻译：提供了一种离轴投影光学系统，其包括非轴向布置的第一和第二反射镜。第一反射镜的切向和矢状曲率半径可以分别为R 1t 1和R 1s 1。第二反射镜的切向和矢状曲率半径可以分别为R 2t 2和R 2s 3。从物点到第一反射镜10的光束的入射角度可以为1＆lt; 1＆gt;，从第一反射镜10反射到第二反射镜30的光束的入射角为 2 。 R 1，R 1，R 2，R 2，R 2，R 1，R 2， SUB＆gt;和i＆lt; 2＆gt;可以满足以下等式。 <？in-line-formula description =“In-line Formulas”end =“lead”？> R＆lt; 1t＆gt; cos＆lt; 1＆lt; 1＆lt; 2＆lt; > cos i <2> <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “引线”→R 1> = R 1t＆lt; 2＆gt;＆lt; 2＆lt;＆lt; =“在线公式”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R <2> 2t 2 “in-line-formula description =”In-line Formulas“end =”tail“？>

9. 发明申请

US20080293215A1 Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions 有权
公开(公告)号：US20080293215A1
公开(公告)日：2008-11-27
申请号：US12219737
申请日：2008-07-28
申请人： Suk-Pil Kim , Yoon-Dong Park , Won-Joo Kim , Dong-Gun Park , Eun-Suk Cho , Suk-Kang Sung , Byung-Yong Choi , Tae-Yong Kim , Choong-Ho Lee
发明人： Suk-Pil Kim , Yoon-Dong Park , Won-Joo Kim , Dong-Gun Park , Eun-Suk Cho , Suk-Kang Sung , Byung-Yong Choi , Tae-Yong Kim , Choong-Ho Lee
IPC分类号： H01L21/76
CPC分类号： H01L29/785 , H01L21/28273 , H01L21/28282 , H01L21/84 , H01L27/10873 , H01L27/10879 , H01L27/1159 , H01L27/2436 , H01L29/66795
摘要： Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.

10. 发明申请

US20070103963A1 Non-volatile memory devices and method thereof 有权
标题翻译：非易失性存储器件及其方法
公开(公告)号：US20070103963A1
公开(公告)日：2007-05-10
申请号：US11490129
申请日：2006-07-21
申请人： Won-Joo Kim , Sung-Jae Byun , Yoon-Dong Park , Eun-Hong Lee , Suk-Pil Kim , Jae-Woong Hyun
发明人： Won-Joo Kim , Sung-Jae Byun , Yoon-Dong Park , Eun-Hong Lee , Suk-Pil Kim , Jae-Woong Hyun
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C16/0416 , G11C2213/31 , G11C2213/32 , G11C2213/72 , H01L27/11521 , H01L27/11568
摘要： Non-volatile memory devices and a method thereof are provided. A non-volatile memory device according to an example embodiment of the present invention may include a first transistor including a source, a drain, and a control gate, a first storage node coupled to the first transistor, the first storage node configured to store information in a first manner, a first diode having a first end connected to the source of the transistor, the first diode configured to rectify a flow of current from the source of the transistor and a second storage node connected to a second end of the first diode, the second storage node configured to store information in a second manner. Another non-volatile memory device according to another example embodiment of the present invention may include a semiconductor substrate having a first conductivity type including an active region defined by a device isolating layer, a source region and a drain region formed by doping an impurity having a second conductivity type in the active region, a control gate electrode insulated from the active region, the control gate electrode extending across the active region disposed between the source region and the drain region, a first storage node layer interposed between the active region and the control gate electrode configured to store information in a first manner, a second storage node layer disposed on the source region configured to store information in a second manner and a diode interposed between the source region and the second storage node layer to rectify a flow of current to the source region. The example method may be directed to obtaining a higher storage capacity per cell area in either of the above-described example non-volatile memory devices.
摘要翻译：提供了非易失性存储器件及其方法。根据本发明的示例性实施例的非易失性存储器件可以包括：第一晶体管，包括源极，漏极和控制栅极;耦合到第一晶体管的第一存储节点，第一存储节点，被配置为存储信息以第一方式，第一二极管具有连接到晶体管的源极的第一端，第一二极管被配置为对来自晶体管的源极的电流进行整流，以及连接到第一二极管的第二端的第二存储节点所述第二存储节点被配置为以第二方式存储信息。根据本发明的另一示例性实施例的另一非易失性存储器件可以包括具有第一导电类型的半导体衬底，该第一导电类型包括由器件隔离层限定的有源区，源区和漏区，有源区中的第二导电类型，与有源区绝缘的控制栅电极，跨越设置在源区和漏区之间的有源区延伸的控制栅电极，插入在有源区和控制区之间的第一存储节点层栅电极，其被配置为以第一方式存储信息;第二存储节点层，被布置在源区域上，被配置为以第二方式存储信息;以及二极管，插入在源区域和第二存储节点层之间，以将电流流向源区域。示例性方法可以针对在上述任一示例非易失性存储器件中获得每个单元区域的更高的存储容量。

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